Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO₂ Super-Lattice

Investigations of In2O3 Added SiC Semiconductive Thin Films and Manufacture of a Heterojunction Diode

This study involved direct doping of In2O3 into silicon carbide (SiC) powder, resulting in 8.0 at% In-doped SiC powder. Subsequently, heating at 500 °C was performed to form a target, followed by the utilization of electron beam (e-beam) technology to deposit the In-doped SiC thin films with the thickness of approximately 189.8 nm. The first breakthrough of this research was the successful deposition of using e-beam technology. The second breakthrough involved utilizing various tools to analyze the physical and electrical properties of In-doped SiC thin films. Hall effect measurement was used to measure the resistivity, mobility, and carrier concentration and confirm its n-type semiconductor nature. The uniform dispersion of In ions in SiC was as confirmed by electron microscopy energy-dispersive spectroscopy and secondary ion mass spectrometry analyses. The Tauc Plot method was employed to determine the Eg values of pure SiC and In-doped SiC thin films. Semiconductor parameter analyzer was used to measure the conductivity and the I-V characteristics of devices in In-doped SiC thin films. Furthermore, the third finding demonstrated that In2O3-doped SiC thin films exhibited remarkable current density. X-ray photoelectron spectroscopy and Gaussian-resolved spectra further confirmed a significant relationship between conductivity and oxygen vacancy concentration. Lastly, depositing these In-doped SiC thin films onto p-type silicon substrates etched with buffered oxide etchant resulted in the formation of heterojunction p-n junction. This junction exhibited the rectifying characteristics of a diode, with sample current values in the vicinity of 102 mA, breakdown voltage at approximately -5.23 V, and open-circuit voltage around 1.56 V. This underscores the potential of In-doped SiC thin films for various semiconductor devices.

Volatile threshold switching and synaptic properties controlled by Ag diffusion using Schottky defects

We investigated diffusion memristors in the structure of Ag/Ta2O5/HfO2/Pt, in which active Ag ions control active metal ion diffusion and mimic biological brain functions. The CMOS compatible high-k metal oxide could control an Ag electrode that was ionized by applying an appropriate voltage to form a conductive filament, and the movement of Ag ions was chemically and electrically controlled due to oxygen density. This diffusion memristor exhibited diffused characteristics with a selectivity of 109, and achieved a low power consumption of 2 mW at a SET voltage of 0.2 V. The threshold transitions were reliably repeatable over 20 cycles for compliance currents of 10-6 A, 10-4 A, and no compliance current, with the largest standard deviation value of SET variation being 0.028. Upon filament formation, Ag ions readily diffused into the interface of the Ta2O5 and HfO2 layer, which was verified by investigating the Ag atomic percentage using XPS and vertical EDX and by measuring the relaxation time of 0.8 ms. Verified volatile switching device demonstrated the biological synaptic properties of quantum conductance, short-term memory, and long-term memory due to controlling the Ag. Diffusion memristors using designed control and switching layers as following film density and oxygen vacancy have improved results as low-power devices and neuromorphic devices compared to other diffusion-based devices, and these properties can be used for various applications such as selectors, synapses, and neuromorphic devices.

Formation Processes of a Solid Electrolyte Interphase at a Silicon/Sulfide Electrolyte Interface in a Model All-Solid-State Li-Ion Battery

Understanding the electrochemical reactions at the interface between a Si anode and a solid sulfide electrolyte is essential in improving the cycle stabilities of Si anodes in all-solid-state batteries (ASSBs). Highly dense Si films with very low roughnesses of <1 nm were fabricated at room temperature via cathodic arc plasma deposition, which led to the formation of a Si/sulfide electrolyte model interface. Li (de)alloying through the model interface hardly occurred during the first cycle, whereas it proceeded stably in subsequent cycles. Hard X-ray photoelectron spectroscopy and neutron reflectometry directly revealed that the reduction or oxidation of the interfacial component or Li3PS4 electrolyte occurred during the first cycle. Consequently, an interfacial layer with a thickness of 13 nm and primarily composed of Li2S, SiS2, and P2S5 glasses was formed during the first cycle. The interfacial layer acted as a Li-conductive, electron-insulating solid electrolyte interphase (SEI) that provided reversible (de)lithiation. Our model interface directly demonstrates the electrochemical reaction processes at the Si/Li3PS4 interface and provides insights into the structures and electrochemical properties of SEIs to activate the (de)lithiation of Si anodes using a sulfide electrolyte.

In Situ Metal Deposition on Perhydropolysilazane-Derived Silica for Structural Color Surfaces with Antiviral Activity

Structural coloration has recently sparked considerable attention on the laboratory and industrial scale. Structural colors can create vivid, saturated, and long-lasting colors on metallic surfaces for optical filters, digital displays, and surface decoration. This study used an all-solution, low-cost method, free of a specific setup procedure, to fabricate structural colors of a multilayered metal-dielectric structure based on interference effects within a Fabry-Perot cavity. The insulating (dielectric) layer was produced from perhydropolysilazane, an inorganic silicon-containing polymer, from which hydrogen was liberated during conversion into silica and applied in situ to reduce metallic nanoparticles on the silica surface. This simple manufacturing technique contributes to the fabrication of large, high-quality surfaces, which could potentially be employed for surface decoration. The fabricated surfaces also exhibited excellent hydrophobic properties with contact angles up to 137°, endowing them with self-cleaning properties. In addition, the antiviral and antibacterial impact of the silver (Ag)/silica (SiO2)/stainless steel (SUS) film was also examined, as Ag has been reported to have antimicrobial and, recently, antiviral properties. According to three independently conducted antiviral assays, the fluorescence expression of virus-infected cells, PCR analysis, and modified tissue culture infectious dose assay, the film inhibited lentivirus by 75, 97, and 99% when exposed to the virus for 20 min, 1 h, and 20 min, respectively. Furthermore, the film had exceptional antibacterial activity with no colony growth observed for 24 and 12 h of inoculation. It is thus conceivable that these structural color-based films can be used to not only decorate metal surfaces with aesthetic colors but also limit virus and bacterium propagation successfully.

Cladding-Pumped Er/Yb-Co-Doped Fiber Amplifier for Multi-Channel Operation

Cladding-pumped erbium (Er3+)/ytterbium (Yb3+)-co-doped fiber amplifiers are more advantageous at high output powers. However, this amplification technique also has potential in telecom-related applications. These types of amplifiers have complex properties, especially when considering gain profile and a pump conversion efficiency. Such metrics depend on the doped fiber profile, absorption/emission spectra, and the input signal power. In this context, we design, build and characterize an inhouse prototype of cladding-pumped Er3+/Yb3+-co-doped fiber amplifier (EYDFA). Our goal is to identify the EYDFA configuration (a co-doped fiber length, pump power, input signal power) suitable for signal amplification in a multichannel fiber-optic transmission system with a dense wavelength allocation across the C-band (1530–1565 nm). Our approach involves experimentally determining the Er3+/Yb3+-co-doped fiber’s parameters to be used in a simulation setup to decide on an initial EYDFA configuration before moving to a laboratory setup. An experimental EYDFA prototype is tested under different conditions using a 48-channel dense wavelength division multiplexing (DWDM, 100 GHz) system to evaluate the absolute gain and gain uniformity. The obtained results allow the cladding pump amplifier’s suitability for wideband signal amplification to be assessed. The developed prototype provides >21 dB of gain with a 12 dB ripple within 1534–1565 nm. Furthermore, we show that the gain profile can be partially flattened out by using longer EYDF spans. This enhances signal amplification in the upper C-band in exchange for a weaker amplification in the lower C-band, which can be marginally improved with higher pump powers.

Multipolar scattering analysis of hybrid metal-dielectric nanostructures

We perform a systematic study showing the evolution of the multipoles along with the spectra for a hybrid metal-dielectric nanoantenna, a Si cylinder and an Ag disk stacked one on top of another, as its dimensions are varied one by one. We broaden our analysis to demonstrate the "magnetic light" at energies above 1 eV by varying the height of the Ag on the Si cylinder and below 1 eV by introducing insulating spacing between them. We also explore the appearance of the anapole state along with some exceptionally narrow spectral features by varying the radius of the Ag disk.

Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers

In this study, silicon oxide (SiO2) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO2 films. Post-annealing was performed in the air at different temperatures for 1 h. The effects of oxygen plasma powers from 1000 W to 3000 W on the properties of the SiO2 thin films were investigated. The experimental results demonstrated that the SiO2 thin film growth per cycle was greatly affected by the O2 plasma power. Atomic force microscope (AFM) and conductive AFM tests show that the surface of the SiO2 thin films, with different O2 plasma powers, is relatively smooth and the films all present favorable insulation properties. The water contact angle (WCA) of the SiO2 thin film deposited at the power of 1500 W is higher than that of other WCAs of SiO2 films deposited at other plasma powers, indicating that it is less hydrophilic. This phenomenon is more likely to be associated with a smaller bonding energy, which is consistent with the result obtained by Fourier transformation infrared spectroscopy. In addition, the influence of post-annealing temperature on the quality of the SiO2 thin films was also investigated. As the annealing temperature increases, the SiO2 thin film becomes denser, leading to a higher refractive index and a lower etch rate.

Blue Electroluminescence in SRO-HFCVD Films

In this work, electroluminescence in Metal-Insulator-Semiconductors (MIS) and Metal-Insulator-Metal (MIM)-type structures was studied. These structures were fabricated with single- and double-layer silicon-rich-oxide (SRO) films by means of Hot Filament Chemical Vapor Deposition (HFCVD), gold and indium tin oxide (ITO) were used on silicon and quartz substrates as a back and front contact, respectively. The thickness, refractive indices, and excess silicon of the SRO films were analyzed. The behavior of the MIS and MIM-type structures and the effects of the pristine current-voltage (I-V) curves with high and low conduction states are presented. The structures exhibit different conduction mechanisms as the Ohmic, Poole–Frenkel, Fowler–Nordheim, and Hopping that contribute to carrier transport in the SRO films. These conduction mechanisms are related to the electroluminescence spectra obtained from the MIS and MIM-like structures with SRO films. The electroluminescence present in these structures has shown bright dots in the low current of 36 uA with a voltage of −20 V to −50 V. However, when applied voltages greater than −67 V with 270 uA, a full area with uniform blue light emission is shown.

Shedding Light on CO Oxidation Surface Chemistry on Single Pt Catalyst Nanoparticles Inside a Nanofluidic Model Pore

Investigating a catalyst under relevant application conditions is experimentally challenging and parameters like reaction conditions in terms of temperature, pressure, and reactant mixing ratios, as well as catalyst design, may significantly impact the obtained experimental results. For Pt catalysts widely used for the oxidation of carbon monoxide, there is keen debate on the oxidation state of the surface at high temperatures and at/above atmospheric pressure, as well as on the most active surface state under these conditions. Here, we employ a nanoreactor in combination with single-particle plasmonic nanospectroscopy to investigate individual Pt catalyst nanoparticles localized inside a nanofluidic model pore during carbon monoxide oxidation at 2 bar in the 450-550 K temperature range. As a main finding, we demonstrate that our single-particle measurements effectively resolve a kinetic phase transition during the reaction and that each individual particle has a unique response. Based on spatially resolved measurements, we furthermore observe how reactant concentration gradients formed due to conversion inside the model pore give rise to position-dependent kinetic phase transitions of the individual particles. Finally, employing extensive electrodynamics simulations, we unravel the surface chemistry of the individual Pt nanoparticles as a function of reactant composition and find strongly temperature-dependent Pt-oxide formation and oxygen spillover to the SiO2 support as the main processes. These results therefore support the existence of a Pt surface oxide in the regime of high catalyst activity and demonstrate the possibility to use plasmonic nanospectroscopy in combination with nanofluidics as a tool for in situ studies of individual catalyst particles.

Effect of an electric field during the deposition of silicon dioxide thin films by plasma enhanced atomic layer deposition: an experimental and computational study

The growth, chemical, structural, mechanical, and optical properties of oxide thin films deposited by plasma enhanced atomic layer deposition (PEALD) are strongly influenced by the average-bias voltage applied during the reaction step of surface functional groups with oxygen plasma species. Here, this effect is investigated thoroughly for SiO2 deposited in two different PEALD tools at average-bias voltages up to -300 V. Already at a very low average-bias voltage (< -10 V), the SiO2 films have significantly lower water content than films grown without biasing together with the formation of denser films having a higher refractive index and nearly stoichiometric composition. Substrate biasing during PEALD also enables control of mechanical stress. The experimental findings are supported by density functional theory and atomistic simulations. They demonstrate that the application of an electric field during the plasma step results in an increased energy transfer between energetic ions and the surface, directly influencing relevant surface reactions. Applying an electric field during the PEALD process leads to SiO2 thin films with significantly improved properties comparable to films grown by ion beam sputtering.