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Liao CT, Kao CY, Su ZT, Lin YS, Wang YW, Yang CF. Investigations of In 2O 3 Added SiC Semiconductive Thin Films and Manufacture of a Heterojunction Diode. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:881. [PMID: 38786836 PMCID: PMC11123852 DOI: 10.3390/nano14100881] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/28/2024] [Revised: 05/15/2024] [Accepted: 05/18/2024] [Indexed: 05/25/2024]
Abstract
This study involved direct doping of In2O3 into silicon carbide (SiC) powder, resulting in 8.0 at% In-doped SiC powder. Subsequently, heating at 500 °C was performed to form a target, followed by the utilization of electron beam (e-beam) technology to deposit the In-doped SiC thin films with the thickness of approximately 189.8 nm. The first breakthrough of this research was the successful deposition of using e-beam technology. The second breakthrough involved utilizing various tools to analyze the physical and electrical properties of In-doped SiC thin films. Hall effect measurement was used to measure the resistivity, mobility, and carrier concentration and confirm its n-type semiconductor nature. The uniform dispersion of In ions in SiC was as confirmed by electron microscopy energy-dispersive spectroscopy and secondary ion mass spectrometry analyses. The Tauc Plot method was employed to determine the Eg values of pure SiC and In-doped SiC thin films. Semiconductor parameter analyzer was used to measure the conductivity and the I-V characteristics of devices in In-doped SiC thin films. Furthermore, the third finding demonstrated that In2O3-doped SiC thin films exhibited remarkable current density. X-ray photoelectron spectroscopy and Gaussian-resolved spectra further confirmed a significant relationship between conductivity and oxygen vacancy concentration. Lastly, depositing these In-doped SiC thin films onto p-type silicon substrates etched with buffered oxide etchant resulted in the formation of heterojunction p-n junction. This junction exhibited the rectifying characteristics of a diode, with sample current values in the vicinity of 102 mA, breakdown voltage at approximately -5.23 V, and open-circuit voltage around 1.56 V. This underscores the potential of In-doped SiC thin films for various semiconductor devices.
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Affiliation(s)
- Chia-Te Liao
- Department of Aviation Communication and Electronics, Air Force Institute of Technology, Kaohsiung 820, Taiwan
| | - Chia-Yang Kao
- Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan
| | - Zhi-Ting Su
- Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan
| | - Yu-Shan Lin
- Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan
| | - Yi-Wen Wang
- Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan
| | - Cheng-Fu Yang
- Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan
- Department of Aeronautical Engineering, Chaoyang University of Technology, Taichung 413, Taiwan
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2
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Jeon YR, Akinwande D, Choi C. Volatile threshold switching and synaptic properties controlled by Ag diffusion using Schottky defects. NANOSCALE HORIZONS 2024; 9:853-862. [PMID: 38505960 DOI: 10.1039/d3nh00571b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/21/2024]
Abstract
We investigated diffusion memristors in the structure of Ag/Ta2O5/HfO2/Pt, in which active Ag ions control active metal ion diffusion and mimic biological brain functions. The CMOS compatible high-k metal oxide could control an Ag electrode that was ionized by applying an appropriate voltage to form a conductive filament, and the movement of Ag ions was chemically and electrically controlled due to oxygen density. This diffusion memristor exhibited diffused characteristics with a selectivity of 109, and achieved a low power consumption of 2 mW at a SET voltage of 0.2 V. The threshold transitions were reliably repeatable over 20 cycles for compliance currents of 10-6 A, 10-4 A, and no compliance current, with the largest standard deviation value of SET variation being 0.028. Upon filament formation, Ag ions readily diffused into the interface of the Ta2O5 and HfO2 layer, which was verified by investigating the Ag atomic percentage using XPS and vertical EDX and by measuring the relaxation time of 0.8 ms. Verified volatile switching device demonstrated the biological synaptic properties of quantum conductance, short-term memory, and long-term memory due to controlling the Ag. Diffusion memristors using designed control and switching layers as following film density and oxygen vacancy have improved results as low-power devices and neuromorphic devices compared to other diffusion-based devices, and these properties can be used for various applications such as selectors, synapses, and neuromorphic devices.
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Affiliation(s)
- Yu-Rim Jeon
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, USA
| | - Deji Akinwande
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, USA
| | - Changhwan Choi
- Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Korea.
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Asano S, Hata JI, Watanabe K, Shimizu K, Matsui N, Yamada NL, Suzuki K, Kanno R, Hirayama M. Formation Processes of a Solid Electrolyte Interphase at a Silicon/Sulfide Electrolyte Interface in a Model All-Solid-State Li-Ion Battery. ACS APPLIED MATERIALS & INTERFACES 2024; 16:7189-7199. [PMID: 38315660 DOI: 10.1021/acsami.3c16862] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
Understanding the electrochemical reactions at the interface between a Si anode and a solid sulfide electrolyte is essential in improving the cycle stabilities of Si anodes in all-solid-state batteries (ASSBs). Highly dense Si films with very low roughnesses of <1 nm were fabricated at room temperature via cathodic arc plasma deposition, which led to the formation of a Si/sulfide electrolyte model interface. Li (de)alloying through the model interface hardly occurred during the first cycle, whereas it proceeded stably in subsequent cycles. Hard X-ray photoelectron spectroscopy and neutron reflectometry directly revealed that the reduction or oxidation of the interfacial component or Li3PS4 electrolyte occurred during the first cycle. Consequently, an interfacial layer with a thickness of 13 nm and primarily composed of Li2S, SiS2, and P2S5 glasses was formed during the first cycle. The interfacial layer acted as a Li-conductive, electron-insulating solid electrolyte interphase (SEI) that provided reversible (de)lithiation. Our model interface directly demonstrates the electrochemical reaction processes at the Si/Li3PS4 interface and provides insights into the structures and electrochemical properties of SEIs to activate the (de)lithiation of Si anodes using a sulfide electrolyte.
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Affiliation(s)
- Sho Asano
- Department of Chemical Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8501, Japan
| | - Jun-Ichi Hata
- Department of Chemical Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8501, Japan
| | - Kenta Watanabe
- Department of Chemical Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8501, Japan
| | - Keisuke Shimizu
- Research Center for All-Solid-State Battery, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8501, Japan
| | - Naoki Matsui
- Research Center for All-Solid-State Battery, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8501, Japan
| | - Norifumi L Yamada
- Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), 1-1 Ohno, Tsukuba, Ibaraki 305-0801, Japan
| | - Kota Suzuki
- Research Center for All-Solid-State Battery, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8501, Japan
| | - Ryoji Kanno
- Research Center for All-Solid-State Battery, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8501, Japan
| | - Masaaki Hirayama
- Department of Chemical Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8501, Japan
- Research Center for All-Solid-State Battery, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8501, Japan
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Burak D, Rahman MA, Seo DC, Byun JY, Han J, Lee SE, Cho SH. In Situ Metal Deposition on Perhydropolysilazane-Derived Silica for Structural Color Surfaces with Antiviral Activity. ACS APPLIED MATERIALS & INTERFACES 2023; 15:54143-54156. [PMID: 37942676 DOI: 10.1021/acsami.3c12622] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/10/2023]
Abstract
Structural coloration has recently sparked considerable attention on the laboratory and industrial scale. Structural colors can create vivid, saturated, and long-lasting colors on metallic surfaces for optical filters, digital displays, and surface decoration. This study used an all-solution, low-cost method, free of a specific setup procedure, to fabricate structural colors of a multilayered metal-dielectric structure based on interference effects within a Fabry-Perot cavity. The insulating (dielectric) layer was produced from perhydropolysilazane, an inorganic silicon-containing polymer, from which hydrogen was liberated during conversion into silica and applied in situ to reduce metallic nanoparticles on the silica surface. This simple manufacturing technique contributes to the fabrication of large, high-quality surfaces, which could potentially be employed for surface decoration. The fabricated surfaces also exhibited excellent hydrophobic properties with contact angles up to 137°, endowing them with self-cleaning properties. In addition, the antiviral and antibacterial impact of the silver (Ag)/silica (SiO2)/stainless steel (SUS) film was also examined, as Ag has been reported to have antimicrobial and, recently, antiviral properties. According to three independently conducted antiviral assays, the fluorescence expression of virus-infected cells, PCR analysis, and modified tissue culture infectious dose assay, the film inhibited lentivirus by 75, 97, and 99% when exposed to the virus for 20 min, 1 h, and 20 min, respectively. Furthermore, the film had exceptional antibacterial activity with no colony growth observed for 24 and 12 h of inoculation. It is thus conceivable that these structural color-based films can be used to not only decorate metal surfaces with aesthetic colors but also limit virus and bacterium propagation successfully.
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Affiliation(s)
- Darya Burak
- Materials Architecturing Research Center, Korea Institute of Science and Technology, 5 Hwarang-ro 14-gil, Seoul 02792, Republic of Korea
- Division of Nano & Information Technology (Nanomaterials Science and Engineering), University of Science and Technology, 217 Gajeong-ro, Yuseong-gu, Daejeon 34113, Republic of Korea
| | - Md Abdur Rahman
- Extreme Materials Research Center, Korea Institute of Science and Technology, 5 Hwarang-ro 14-gil, Seoul 02792, Republic of Korea
| | - Dong-Chan Seo
- Research Animal Resources Center, Korea Institute of Science and Technology, 5 Hwarang-ro 14-gil, Seoul 02792, Republic of Korea
| | - Ji Young Byun
- Extreme Materials Research Center, Korea Institute of Science and Technology, 5 Hwarang-ro 14-gil, Seoul 02792, Republic of Korea
| | - Joonsoo Han
- Materials Architecturing Research Center, Korea Institute of Science and Technology, 5 Hwarang-ro 14-gil, Seoul 02792, Republic of Korea
| | - Seung Eun Lee
- Research Animal Resources Center, Korea Institute of Science and Technology, 5 Hwarang-ro 14-gil, Seoul 02792, Republic of Korea
| | - So-Hye Cho
- Materials Architecturing Research Center, Korea Institute of Science and Technology, 5 Hwarang-ro 14-gil, Seoul 02792, Republic of Korea
- Division of Nano & Information Technology (Nanomaterials Science and Engineering), University of Science and Technology, 217 Gajeong-ro, Yuseong-gu, Daejeon 34113, Republic of Korea
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5
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Cladding-Pumped Er/Yb-Co-Doped Fiber Amplifier for Multi-Channel Operation. PHOTONICS 2022. [DOI: 10.3390/photonics9070457] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Cladding-pumped erbium (Er3+)/ytterbium (Yb3+)-co-doped fiber amplifiers are more advantageous at high output powers. However, this amplification technique also has potential in telecom-related applications. These types of amplifiers have complex properties, especially when considering gain profile and a pump conversion efficiency. Such metrics depend on the doped fiber profile, absorption/emission spectra, and the input signal power. In this context, we design, build and characterize an inhouse prototype of cladding-pumped Er3+/Yb3+-co-doped fiber amplifier (EYDFA). Our goal is to identify the EYDFA configuration (a co-doped fiber length, pump power, input signal power) suitable for signal amplification in a multichannel fiber-optic transmission system with a dense wavelength allocation across the C-band (1530–1565 nm). Our approach involves experimentally determining the Er3+/Yb3+-co-doped fiber’s parameters to be used in a simulation setup to decide on an initial EYDFA configuration before moving to a laboratory setup. An experimental EYDFA prototype is tested under different conditions using a 48-channel dense wavelength division multiplexing (DWDM, 100 GHz) system to evaluate the absolute gain and gain uniformity. The obtained results allow the cladding pump amplifier’s suitability for wideband signal amplification to be assessed. The developed prototype provides >21 dB of gain with a 12 dB ripple within 1534–1565 nm. Furthermore, we show that the gain profile can be partially flattened out by using longer EYDF spans. This enhances signal amplification in the upper C-band in exchange for a weaker amplification in the lower C-band, which can be marginally improved with higher pump powers.
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Iqbal Z, Sadiq S, Sadiq M, Khan I, Saeed K. Effect of Microwave Irradiation on the Catalytic Activity of Tetragonal Zirconia: Selective Hydrogenation of Aldehyde. ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING 2022. [DOI: 10.1007/s13369-021-05712-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/21/2022]
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7
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Ray D, Kiselev A, Martin OJF. Multipolar scattering analysis of hybrid metal-dielectric nanostructures. OPTICS EXPRESS 2021; 29:24056-24067. [PMID: 34614658 DOI: 10.1364/oe.427911] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2021] [Accepted: 07/05/2021] [Indexed: 06/13/2023]
Abstract
We perform a systematic study showing the evolution of the multipoles along with the spectra for a hybrid metal-dielectric nanoantenna, a Si cylinder and an Ag disk stacked one on top of another, as its dimensions are varied one by one. We broaden our analysis to demonstrate the "magnetic light" at energies above 1 eV by varying the height of the Ag on the Si cylinder and below 1 eV by introducing insulating spacing between them. We also explore the appearance of the anapole state along with some exceptionally narrow spectral features by varying the radius of the Ag disk.
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8
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Zhang XY, Yang Y, Zhang ZX, Geng XP, Hsu CH, Wu WY, Lien SY, Zhu WZ. Deposition and Characterization of RP-ALD SiO 2 Thin Films with Different Oxygen Plasma Powers. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:1173. [PMID: 33947065 PMCID: PMC8145387 DOI: 10.3390/nano11051173] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/05/2021] [Revised: 04/23/2021] [Accepted: 04/26/2021] [Indexed: 02/06/2023]
Abstract
In this study, silicon oxide (SiO2) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO2 films. Post-annealing was performed in the air at different temperatures for 1 h. The effects of oxygen plasma powers from 1000 W to 3000 W on the properties of the SiO2 thin films were investigated. The experimental results demonstrated that the SiO2 thin film growth per cycle was greatly affected by the O2 plasma power. Atomic force microscope (AFM) and conductive AFM tests show that the surface of the SiO2 thin films, with different O2 plasma powers, is relatively smooth and the films all present favorable insulation properties. The water contact angle (WCA) of the SiO2 thin film deposited at the power of 1500 W is higher than that of other WCAs of SiO2 films deposited at other plasma powers, indicating that it is less hydrophilic. This phenomenon is more likely to be associated with a smaller bonding energy, which is consistent with the result obtained by Fourier transformation infrared spectroscopy. In addition, the influence of post-annealing temperature on the quality of the SiO2 thin films was also investigated. As the annealing temperature increases, the SiO2 thin film becomes denser, leading to a higher refractive index and a lower etch rate.
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Affiliation(s)
- Xiao-Ying Zhang
- School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (X.-Y.Z.); (Y.Y.); (Z.-X.Z.); (X.-P.G.); (C.-H.H.); (W.-Z.Z.)
- Fujian Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen 361024, China
| | - Yue Yang
- School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (X.-Y.Z.); (Y.Y.); (Z.-X.Z.); (X.-P.G.); (C.-H.H.); (W.-Z.Z.)
| | - Zhi-Xuan Zhang
- School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (X.-Y.Z.); (Y.Y.); (Z.-X.Z.); (X.-P.G.); (C.-H.H.); (W.-Z.Z.)
| | - Xin-Peng Geng
- School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (X.-Y.Z.); (Y.Y.); (Z.-X.Z.); (X.-P.G.); (C.-H.H.); (W.-Z.Z.)
| | - Chia-Hsun Hsu
- School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (X.-Y.Z.); (Y.Y.); (Z.-X.Z.); (X.-P.G.); (C.-H.H.); (W.-Z.Z.)
| | - Wan-Yu Wu
- Department of Biomedical Engineering, Da-Yeh University, Chung Hua 51591, Taiwan;
| | - Shui-Yang Lien
- School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (X.-Y.Z.); (Y.Y.); (Z.-X.Z.); (X.-P.G.); (C.-H.H.); (W.-Z.Z.)
- Fujian Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen 361024, China
- Department of Biomedical Engineering, Da-Yeh University, Chung Hua 51591, Taiwan;
| | - Wen-Zhang Zhu
- School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (X.-Y.Z.); (Y.Y.); (Z.-X.Z.); (X.-P.G.); (C.-H.H.); (W.-Z.Z.)
- Fujian Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen 361024, China
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Martínez HP, Luna JA, Morales R, Casco JF, Hernández JAD, Luna A, Hernández ZJ, Mendoza G, Monfil K, Ramírez R, Carrillo J, Flores J. Blue Electroluminescence in SRO-HFCVD Films. NANOMATERIALS 2021; 11:nano11040943. [PMID: 33917685 PMCID: PMC8067983 DOI: 10.3390/nano11040943] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/31/2020] [Revised: 03/02/2021] [Accepted: 03/17/2021] [Indexed: 01/21/2023]
Abstract
In this work, electroluminescence in Metal-Insulator-Semiconductors (MIS) and Metal-Insulator-Metal (MIM)-type structures was studied. These structures were fabricated with single- and double-layer silicon-rich-oxide (SRO) films by means of Hot Filament Chemical Vapor Deposition (HFCVD), gold and indium tin oxide (ITO) were used on silicon and quartz substrates as a back and front contact, respectively. The thickness, refractive indices, and excess silicon of the SRO films were analyzed. The behavior of the MIS and MIM-type structures and the effects of the pristine current-voltage (I-V) curves with high and low conduction states are presented. The structures exhibit different conduction mechanisms as the Ohmic, Poole–Frenkel, Fowler–Nordheim, and Hopping that contribute to carrier transport in the SRO films. These conduction mechanisms are related to the electroluminescence spectra obtained from the MIS and MIM-like structures with SRO films. The electroluminescence present in these structures has shown bright dots in the low current of 36 uA with a voltage of −20 V to −50 V. However, when applied voltages greater than −67 V with 270 uA, a full area with uniform blue light emission is shown.
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Affiliation(s)
- Haydee P. Martínez
- Departamento de Ingeniería Eléctrica y Electrónica, Tecnológico Nacional de México/Instituto Tecnológico de Apizaco Carretera Apizaco-Tzompantepec, Esquina con Av. Instituto Tecnológico S/N. Conurbado Apizaco-Tzompantepec, Apizaco 90300, Mexico; (H.P.M.); (R.M.); (J.F.C.)
| | - José A. Luna
- Centro de Investigación en Dispositivos Semiconductores (CIDS-ICUAP), Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 14 sur, Edif. IC5 C.U., Col. San Manuel, Puebla 72570, Mexico; (J.A.D.H.); (Z.J.H.); (G.M.); (K.M.); (J.C.)
- Correspondence: ; Tel.:+52-22-23-59-00-16
| | - Roberto Morales
- Departamento de Ingeniería Eléctrica y Electrónica, Tecnológico Nacional de México/Instituto Tecnológico de Apizaco Carretera Apizaco-Tzompantepec, Esquina con Av. Instituto Tecnológico S/N. Conurbado Apizaco-Tzompantepec, Apizaco 90300, Mexico; (H.P.M.); (R.M.); (J.F.C.)
| | - José F. Casco
- Departamento de Ingeniería Eléctrica y Electrónica, Tecnológico Nacional de México/Instituto Tecnológico de Apizaco Carretera Apizaco-Tzompantepec, Esquina con Av. Instituto Tecnológico S/N. Conurbado Apizaco-Tzompantepec, Apizaco 90300, Mexico; (H.P.M.); (R.M.); (J.F.C.)
| | - José A. D. Hernández
- Centro de Investigación en Dispositivos Semiconductores (CIDS-ICUAP), Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 14 sur, Edif. IC5 C.U., Col. San Manuel, Puebla 72570, Mexico; (J.A.D.H.); (Z.J.H.); (G.M.); (K.M.); (J.C.)
| | - Adan Luna
- Facultad de Ingeniería Química, Benemérita Universidad Autónoma de Puebla (BUAP), Puebla 72570, Mexico;
| | - Zaira J. Hernández
- Centro de Investigación en Dispositivos Semiconductores (CIDS-ICUAP), Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 14 sur, Edif. IC5 C.U., Col. San Manuel, Puebla 72570, Mexico; (J.A.D.H.); (Z.J.H.); (G.M.); (K.M.); (J.C.)
| | - Gabriel Mendoza
- Centro de Investigación en Dispositivos Semiconductores (CIDS-ICUAP), Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 14 sur, Edif. IC5 C.U., Col. San Manuel, Puebla 72570, Mexico; (J.A.D.H.); (Z.J.H.); (G.M.); (K.M.); (J.C.)
| | - Karim Monfil
- Centro de Investigación en Dispositivos Semiconductores (CIDS-ICUAP), Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 14 sur, Edif. IC5 C.U., Col. San Manuel, Puebla 72570, Mexico; (J.A.D.H.); (Z.J.H.); (G.M.); (K.M.); (J.C.)
| | - Raquel Ramírez
- Carrera de Mecatrónica, Universidad Tecnológica de Huejotzingo (UTH), Real San Mateo 36B, Segunda Secc, Santa Ana Xalmimilulco, Puebla 74169, Mexico;
| | - Jesús Carrillo
- Centro de Investigación en Dispositivos Semiconductores (CIDS-ICUAP), Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 14 sur, Edif. IC5 C.U., Col. San Manuel, Puebla 72570, Mexico; (J.A.D.H.); (Z.J.H.); (G.M.); (K.M.); (J.C.)
| | - Javier Flores
- Departamento de Ingeniería, Benemérita Universidad Autónoma de Puebla-Ciudad Universitaria, Blvd. Valsequillo y Esquina, Av. San Claudio s/n, Col. San Manuel, Puebla 72570, Mexico;
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10
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Albinsson D, Bartling S, Nilsson S, Ström H, Fritzsche J, Langhammer C. Shedding Light on CO Oxidation Surface Chemistry on Single Pt Catalyst Nanoparticles Inside a Nanofluidic Model Pore. ACS Catal 2021; 11:2021-2033. [PMID: 33643681 PMCID: PMC7901062 DOI: 10.1021/acscatal.0c04955] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/13/2020] [Revised: 01/20/2021] [Indexed: 11/28/2022]
Abstract
Investigating a catalyst under relevant application conditions is experimentally challenging and parameters like reaction conditions in terms of temperature, pressure, and reactant mixing ratios, as well as catalyst design, may significantly impact the obtained experimental results. For Pt catalysts widely used for the oxidation of carbon monoxide, there is keen debate on the oxidation state of the surface at high temperatures and at/above atmospheric pressure, as well as on the most active surface state under these conditions. Here, we employ a nanoreactor in combination with single-particle plasmonic nanospectroscopy to investigate individual Pt catalyst nanoparticles localized inside a nanofluidic model pore during carbon monoxide oxidation at 2 bar in the 450-550 K temperature range. As a main finding, we demonstrate that our single-particle measurements effectively resolve a kinetic phase transition during the reaction and that each individual particle has a unique response. Based on spatially resolved measurements, we furthermore observe how reactant concentration gradients formed due to conversion inside the model pore give rise to position-dependent kinetic phase transitions of the individual particles. Finally, employing extensive electrodynamics simulations, we unravel the surface chemistry of the individual Pt nanoparticles as a function of reactant composition and find strongly temperature-dependent Pt-oxide formation and oxygen spillover to the SiO2 support as the main processes. These results therefore support the existence of a Pt surface oxide in the regime of high catalyst activity and demonstrate the possibility to use plasmonic nanospectroscopy in combination with nanofluidics as a tool for in situ studies of individual catalyst particles.
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Affiliation(s)
- David Albinsson
- Department
of Physics, Chalmers University of Technology, 412 96 Göteborg, Sweden
| | - Stephan Bartling
- Department
of Physics, Chalmers University of Technology, 412 96 Göteborg, Sweden
| | - Sara Nilsson
- Department
of Physics, Chalmers University of Technology, 412 96 Göteborg, Sweden
| | - Henrik Ström
- Department
of Mechanics and Maritime Sciences, Chalmers
University of Technology, 412 96 Göteborg, Sweden
- Department
of Energy and Process Engineering, Norwegian
University of Science and Technology, 7491 Trondheim, Norway
| | - Joachim Fritzsche
- Department
of Physics, Chalmers University of Technology, 412 96 Göteborg, Sweden
| | - Christoph Langhammer
- Department
of Physics, Chalmers University of Technology, 412 96 Göteborg, Sweden
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Beladiya V, Becker M, Faraz T, Kessels WMME, Schenk P, Otto F, Fritz T, Gruenewald M, Helbing C, Jandt KD, Tünnermann A, Sierka M, Szeghalmi A. Effect of an electric field during the deposition of silicon dioxide thin films by plasma enhanced atomic layer deposition: an experimental and computational study. NANOSCALE 2020; 12:2089-2102. [PMID: 31912855 DOI: 10.1039/c9nr07202k] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The growth, chemical, structural, mechanical, and optical properties of oxide thin films deposited by plasma enhanced atomic layer deposition (PEALD) are strongly influenced by the average-bias voltage applied during the reaction step of surface functional groups with oxygen plasma species. Here, this effect is investigated thoroughly for SiO2 deposited in two different PEALD tools at average-bias voltages up to -300 V. Already at a very low average-bias voltage (< -10 V), the SiO2 films have significantly lower water content than films grown without biasing together with the formation of denser films having a higher refractive index and nearly stoichiometric composition. Substrate biasing during PEALD also enables control of mechanical stress. The experimental findings are supported by density functional theory and atomistic simulations. They demonstrate that the application of an electric field during the plasma step results in an increased energy transfer between energetic ions and the surface, directly influencing relevant surface reactions. Applying an electric field during the PEALD process leads to SiO2 thin films with significantly improved properties comparable to films grown by ion beam sputtering.
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Affiliation(s)
- Vivek Beladiya
- Institute of Applied Physics, Friedrich Schiller University Jena, Albert-Einstein-Str. 15, 07745 Jena, Germany
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