Coherent Thermal Conduction in Silicon Nanowires with Periodic Wings

Impact of nanopillars on phonon dispersion and thermal conductivity of silicon membranes

The performance of silicon-based thermoelectric energy generators is limited by the high thermal conductivity of silicon. Theoretical works have long proposed reducing the thermal conductivity by resonant phonon modes in nanopillars placed on the surface of silicon films. However, these predictions have never been confirmed due to the difficulty in the nanofabrication and measurements of such nanoscale systems. In this work, we report on the fabrication and measurements of silicon films with nanopillars as small as 12 nm in diameter. Our Brillouin light scattering spectroscopy experiments revealed that nanopillars indeed host resonant phonon modes. Yet, our thermal measurements using the micro time-domain thermoreflectance technique showed only a statistically insignificant difference between the thermal properties of silicon membranes with and without nanopillars. Results of this work contrast with the predictions of a substantial reduction in the thermal conductivity due to nanopillars and suggest refining the simulations to account for realistic experimental conditions.

Enhancing the Coherent Phonon Transport in SiGe Nanowires with Dense Si/Ge Interfaces

The manipulation of phonon transport with coherent waves in solids is of fundamental interest and useful for thermal conductivity design. Based on equilibrium molecular dynamics simulations and lattice dynamics calculations, the thermal transport in SiGe superlattice nanowires with a tuned Si/Ge interface density was investigated by using the core-shell and phononic structures as the primary stacking layers. It was found that the thermal conductivity decreased with the increase of superlattice period lengths (Lp) when Lp was larger than 4 nm. This is because introducing additional Si/Ge interfaces can enhance phonon scattering. However, when Lp<4 nm, the increased interface density could promote heat transfer. Phonon density-of-state analysis demonstrates that new modes between 10 and 14 THz are formed in structures with dense Si/Ge interfaces, which is a signature of coherent phonon transport as those modes do not belong to bulk Si or Ge. The density of the newly generated modes increases with the increase of interface density, leading to an enhanced coherent transport. Besides, with the increase of interface density, the energy distribution of the newly generated modes becomes more balanced on Si and Ge atoms, which also facilitates heat transfer. Our current work is not only helpful for understanding coherent phonon transport but also beneficial for the design of new materials with tunable thermal conductivity.

Thermal Transport Evolution Due to Nanostructural Transformations in Ga-Doped Indium-Tin-Oxide Thin Films

We report on a comprehensive theoretical and experimental investigation of thermal conductivity in indium-tin-oxide (ITO) thin films with various Ga concentrations (0-30 at. %) deposited by spray pyrolysis technique. X-ray diffraction (XRD) and scanning electron microscopy have shown a structural transformation in the range 15-20 at. % Ga from the nanocrystalline to the amorphous phase. Room temperature femtosecond time domain thermoreflectance measurements showed nonlinear decrease of thermal conductivity in the range 2.0-0.5 Wm-1 K-1 depending on Ga doping level. It was found from a comparison between density functional theory calculations and XRD data that Ga atoms substitute In atoms in the ITO nanocrystals retaining Ia-3 space group symmetry. The calculated phonon dispersion relations revealed that Ga doping leads to the appearance of hybridized metal atom vibrations with avoided-crossing behavior. These hybridized vibrations possess shortened mean free paths and are the main reason behind the thermal conductivity drop in nanocrystalline phase. An evolution from propagative to diffusive phonon thermal transport in ITO:Ga with 15-20 at. % of Ga was established. The suppressed thermal conductivity of ITO:Ga thin films deposited by spray pyrolysis may be crucial for their thermoelectric applications.