High-Performance Ultraviolet Light Detection Using Nano-Scale-Fin Isolation AlGaN/GaN Heterostructures with ZnO Nanorods

Interface Trap Effect on the n-Channel GaN Schottky Barrier-Metal-Oxide Semiconductor Field-Effect Transistor for Ultraviolet Optoelectronic Integration

Ultraviolet (UV) photodetectors are key devices required in the industrial, military, space, environmental, and biological fields. The Schottky barrier (SB)-MOSFET, with its high hole and electron barrier, and given its extremely low dark current, has broad development prospects in the optoelectronics field. We analyze the effects of trap states on the output characteristics of an inversion mode n-channel GaN SB-MOSFET using TCAD simulations. At the oxide/GaN interface below the gate, it was demonstrated that shallow donor-like traps were responsible for degrading the subthreshold swing (SS) and off-state current density (Ioff), while deep donor-like traps below the Fermi energy level were insignificant. In addition, shallow acceptor-like traps shifted the threshold voltage (Vt) positively and deteriorated the SS and on-state current density (Ion), while deep acceptor-like traps acted on a fixed charge. The output characteristics of the GaN SB-MOSFET were related to the resistive GaN path and the tunneling rate due to the traps at the metal (source, drain)/GaN interface. For the UV responses, the main mechanism for the negative Vt shift and the increases in the Ion and spectral responsivity was related to the photo-gating effect caused by light-generated holes trapped in the shallow trap states. These results will provide insights for UV detection technology and for a high-performance monolithic integration of the GaN SB-MOSFET.

Development of modern nanotecnologies and combined biotoxicity problems

Fast progress in modern nanotechnologies based on use of nanoparticles, nanofibers and nanotubes with different composition, shape and size allows elaboration of materials with superhigh strength, thermal and electric conductivity, acoustical and optical properties. Those materials are already widely used in industry, transportation, aerospace, marine and civil engineering, food processing and medicine. Some examples of nanoreinforces composites, superhydrophobic self-cleaning surfaces, nanodyes and suspensions of nanoparticles are described. The problem of uncontrolled accumulation of some types of nanoparticles in our cells and tissues is discussed within the concept of nanotoxicity. Since the history of permanent observation of human health in connection with nanodust accumulation in the atmosphere, waters and soils is not enough long, the detailed evidences must be documented, systematized and discussed. In this study a brief systematic review of literature on the biotoxicity problems caused by modern nanotechnologies is given. Production of the nanoparticles, nanofibers and nanotubes for industry, transportation, food processing, as well as utilization of the used materials which properties were modified by the nanotechnologies leads to permanent rise of the nanodust in the atmosphere, soils, river waters, lakes and the sea bottom. Their uncontrolled interaction with flora and fauna could be catastrophic for human health and life on the Earth. Promising ways for the problem solution and perspectives are discussed. Some own results on the protective action of nanodiamonds, silver and some other nanoparticles are presented. A vital necessity of an open access database on known types of nanoparticles, their use in the materials and documented influence of health of animals and humans is discussed

Self-powered photodetectors with a position-controlled array based on ZnO nanoclusters

A self-powered ultraviolet (UV) photodetector (PD) with a position-controlled array based on zinc oxide (ZnO) nanoclusters (NCs) has been proposed. The structure of the special array makes it possible to reduce the light loss and improve the light trap. The PD innovatively modifies the structure of ZnO PDs, which is distinguished from other traditional devices. The results demonstrate that the ZnO NC array can spontaneously generate the carrier and successfully achieve the detection at zero bias under the radiation of UV light. In this study, the structure is fabricated with two different substrates of silicon (Si) and GaN. At zero bias voltage, the Si-based PD under 365 nm shows the responsivity and external quantum efficiency (EQE) reaching up to 14.1 mA/W and 4.79%, respectively, and the responsivity of the GaN-based detector can be obtained up to 59.9 mA/W; its parameter of EQE is 20.04%, the photocurrent is 10^-5A, and the on/off ratio is 174. Our findings indicate that this structure of the device has potential for applications that require detection of light.

Effects of Seed-Layer N2O Plasma Treatment on ZnO Nanorod Based Ultraviolet Photodetectors: Experimental Investigation with Two Different Device Structures

The crystalline quality of ZnO NR (nanorod) as a sensing material for visible blind ultraviolet PDs (photodetectors) critically depends on the SL (seed layer) material of properties, which is a key to high-quality nanocrystallite growth, more so than the synthesis method. In this study, we fabricated two different device structures of a gateless AlGaN/GaN HEMT (high electron mobility transistor) and a photoconductive PD structure with an IDE (interdigitated electrode) pattern implemented on a PET (polyethylene terephthalate) flexible substrate, and investigated the impact on device performance through the SL N₂O plasma treatment. In case of HEMT-based PD, the highest current on-off ratio (~7) and spectral responsivity R (~1.5 × 10⁵ A/W) were obtained from the treatment for 6 min, whereas the IDE pattern-based PD showed the best performance (on-off ratio = ~44, R = ~69 A/W) from the treatment for 3 min and above, during which a significant etch damage on PET substrates was produced. This improvement in device performance was due to the enhancement in NR crystalline quality as revealed by our X-ray diffraction, photoluminescence, and microanalysis.

Review on the Properties of Boron-Doped Diamond and One-Dimensional-Metal-Oxide Based P-N Heterojunction Optoelectronic

This review is mainly focused on the optoelectronic properties of diamond-based one-dimensional-metal-oxide heterojunction. First, we briefly introduce the research progress on one-dimensional (1D)-metal-oxide heterojunctions and the features of the p-type boron-doped diamond (BDD) film; then, we discuss the use of three oxide types (ZnO, TiO2 and WO3) in diamond-based-1D-metal-oxide heterojunctions, including fabrication, epitaxial growth, photocatalytic properties, electrical transport behavior and negative differential resistance behavior, especially at higher temperatures. Finally, we discuss the challenges and future trends in this research area. The discussed results of about 10 years' research on high-performance diamond-based heterojunctions will contribute to the further development of photoelectric nano-devices for high-temperature and high-power applications.

Y2O3: Eu3+/PMMA hybrid film as a converter for enhanced harvesting of broadband solar-blind UV light

At present, the most common materials for solar-blind UV light detectors are wide band-gap semiconductors, which generally have high requirements and complex methods for preparation. Ordinary semiconductor materials such as silicon, TiO₂, and Cu₂O were industrialized, but they were excluded for direct harvest of solar-blind UV light due to their inability to absorb solar-blind light photons. Here, inorganic-organic hybrid film of Y₂O₃:Eu³⁺/PMMA was used as a spectral converter to realize the detection of broadband solar-blind UV light by ordinary semiconductor, converting broadband solar-blind UV luminescence to visible luminescence based on down-conversion process, after which the visible luminescence was detected by the Si photo-resister. The results show that hybrid film based on rare earth luminescence materials is particularly valuable for broadband solar-blind UV detection.

Enhancement in the photonic response of ZnO nanorod-gated AlGaN/GaN HEMTs with N2O plasma treatment

We demonstrate an improvement in the photoresponse characteristics of ultraviolet (UV) photodetectors (PDs) using the N₂O plasma-treated ZnO nanorod (NR) gated AlGaN/GaN high electron mobility transistor (HEMT) structure. The PDs fabricated with ZnO NRs plasma-treated for 6 min show superior performance in terms of responsivity (∼1.54×10 ⁵ A/W), specific detectivity (∼ 4.7×10¹³ cm·Hz^-1/2/W), and on/off current ratio (∼40). These improved performance parameters are the best among those from HEMT-based PDs reported to date. Photoluminescence analysis shows a significant enhancement in near band edge emission due to the effective suppression of native defects near the surface of ZnO NRs after plasma treatment. As our X-ray photoelectron spectroscopy reveals a very high O/Zn ratio of ∼0.96 from the NR samples plasma-treated for 6 min, the N₂O plasma radicals also show a clear impact on ZnO stoichiometry. From our X-ray diffraction analysis, the plasma-treated ZnO NRs show much greater improvement in (002) peak intensity and degree of (002) orientation (∼0.996) than those of as-grown NRs. This significant enhancement in (002) degree of orientation and stoichiometry in ZnO nano-crystals contribute to the enhancement in photoresponse characteristics of the PDs.

Ultraviolet Photodetecting and Plasmon-to-Electric Conversion of Controlled Inkjet-Printing Thin-Film Transistors

Direct ink-jet printing of a zinc-oxide-based thin-film transistor (ZnO-based TFT) with a three-dimensional (3-D) channel structure was demonstrated for ultraviolet light (UV) and visible light photodetection. Here, we demonstrated the channel structures by which temperature-induced Marangoni flow can be used to narrow the channel width from 318.9 ± 44.1 μm to 180.1 ± 13.9 μm via a temperature gradient. Furthermore, a simple and efficient oxygen plasma treatment was used to enhance the electrical characteristics of switching I_ON/I_OFF ratio of approximately 10⁵. Therefore, the stable and excellent gate bias-controlled photo-transistors were fabricated and characterized in detail for ultraviolet (UV) and visible light sensing. The photodetector exhibited a superior photoresponse with a significant increase of more than 2 orders of magnitude larger drain current generated upon UV illumination. The results could be useful for the development of UV photodetectors by the direct-patterning ink-jet printing technique. Additionally, we also have successfully demonstrated that a metal-semiconductor junction structure that enables plasmon energy detection by using the plasmonic effects is an efficient conversion of plasmon energy to an electrical signal. The device showed a significant variations negative shift of threshold voltage under different light power density with exposure of visible light. With the ZnO-based TFTs, only ultraviolet light detection extends to the visible light wavelength.

The effect of ZnO/ZnSe core/shell nanorod arrays photoelectrodes on PbS quantum dot sensitized solar cell performance

ZnO nanorod (NR) based inorganic quantum dot sensitized solar cells have gained tremendous attention for use in next generation solar cells. ZnO/ZnSe-core/shell NR arrays (NRAs) with various densities were grown on an Au@ZnO seed layer (Au = 0.0, 4.0, 8.0 and 16.0 nm) on glass supported fluorine-doped tin oxide (FTO) substrates using low cost hydrothermal and ion-exchange approaches. PbS quantum dots (QDs) were loaded into the ZnO/ZnSe core/shell NRAs via a successive ionic layer adsorption and reaction (SILAR) method. The morphology, structural and optical properties of the core/shell NRAs were investigated using field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and UV-vis spectroscopy measurements. It was observed that the density of the ZnO/ZnSe NRAs decreases with increasing Au buffer layer thickness. The absorption decreases along with a decrease in the ZnO/ZnSe NRA density. The ZnO NRs/PbS QD photoelectrode performs poorly; however, after introducing a ZnSe shell on the core-ZnO, the solar cells parameters changed according to the ZnO/ZnSe NRA density. Values of η = ∼0.88%, J SC = 14.60 mA cm-2, and V OC = 190 mV, and η = ∼0.25%, J SC = 6.77 mA cm-2, and V OC = 115 mV were obtained for the highest and lowest NRA densities, respectively. Although the photovoltaic performance of these photoelectrodes is still inferior, further improvement of the device would be possible by suppressing surface defects, and through quality optimization of the ZnO/ZnSe NRAs, PbS QDs, counter electrode and electrolyte.

Highly Responsive Ultraviolet Sensor Based on ZnS Quantum Dot Solid with Enhanced Photocurrent

Detection of visible blind UV radiation is not only interesting but also of technologically important. Herein, we demonstrate the efficient detection of UV radiation by using cluster like ZnS quantum dot solid nanostructures prepared by simple reflux condensation technique. The short-chain ligand 3-mercaptopropionic acid (MPA) involved in the synthesis lead to the cluster like formation of ZnS quantum dots into solids upon prolonged synthesis conditions. The ZnS QD solid formation resulted in the strong delocalization of electronic wave function between the neighboring quantum dots. It increases the photocurrent value, which can be further confirmed by the decrease in the average lifetime values from 64 to 4.6 ns upon ZnS cluster like QD solid formation from ZnS QDs. The ZnS quantum dot solid based UV sensor shows good photocurrent response and a maximum responsivity of 0.31 (A/W) at a wavelength of 390 nm, is not only competitive when compared with previous reports but also better than ZnS and metal oxide-based photodetectors. The device exhibits a high current value under low-intensity UV light source and an on/off ratio of IUV/Idark = 413 at zero biasing voltage with a fast response. Further, photocurrent device has been constructed using ZnS quantum dot solid nanostructures with graphene hybrids as an active layer to improve the enhancement of photoresponsivity.

High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc p-n Vertical Heterojunction

Gallium nitride (GaN) is a superior candidate material for fabricating ultraviolet (UV) photodetectors (PDs) by taking advantage of its attractive wide bandgap (3.4 eV) and stable chemical and physical properties. However, the performance of available GaN-based UV PDs (e.g., in terms of detectivity and sensitivity) still require improvement. Fabricating nanoporous GaN (porous-GaN) structures and constructing organic/inorganic hybrids are two effective ways to improve the performance of PDs. In this study, a novel self-powered UV PD was developed by using p-type cobalt phthalocyanine (CoPc) and n-type porous-GaN (CoPc/porous-GaN) to construct a p–n vertical heterojunction via a thermal vapor deposition method. Under 365 nm 0.009 mWcm⁻² light illumination, our device showed a photoresponsivity of 588 mA/W, a detectivity of 4.8 × 10¹² Jones, and a linear dynamic range of 79.5 dB, which are better than CoPc- and flat-GaN (CoPc/flat-GaN)-based PDs. The high performance was mainly attributed to the built-in electric field (BEF) generated at the interface of the CoPc film and the nanoporous-GaN, as well as the nanoporous structure of GaN, which allows for a higher absorptivity of light. Furthermore, the device showed excellent stability, as its photoelectrical property and on/off switching behavior remained the same, even after 3 months.

High-Performance Flexible Ultraviolet Photodetectors with Ni/Cu-Codoped ZnO Nanorods Grown on PET Substrates

As a developing technology for flexible electronic device fabrication, ultra-violet (UV) photodetectors (PDs) based on a ZnO nanostructure are an effective approach for large-area integration of sensors on nonconventional substrates, such as plastic or paper. However, photoconductive ZnO nanorods grown on flexible substrates have slow responses or recovery as well as low spectral responsivity R because of the native defects and inferior crystallinity of hydrothermally grown ZnO nanorods at low temperatures. In this study, ZnO nanorod crystallites are doped with Cu or Ni/Cu when grown on polyethylene terephthalate (PET) substrates in an attempt to improve the performance of flexible PDs. The doping with Ni/Cu or Cu not only improves the crystalline quality but also significantly suppresses the density of deep-level emission defects in as-grown ZnO nanorods, as demonstrated by X-ray diffraction and photoluminescence. Furthermore, the X-ray photoelectron spectroscopy analysis shows that doping with the transition metals significantly increases the oxygen bonding with metal ions with enhanced O/Zn stoichiometry in as-grown nanorods. The fabricated flexible PD devices based on an interdigitated electrode structure demonstrates a very high R of ~123 A/W, a high on-off current ratio of ~130, and a significant improvement in transient response speed exhibiting rise and fall time of ~8 and ~3 s, respectively, by using the ZnO nanorods codoped by Ni/Cu.

CuO/ZnO Heterojunction Nanorod Arrays Prepared by Photochemical Method with Improved UV Detecting Performance

CuO/ZnO heterojunction nanorod arrays were synthesized using a facile photochemical deposition strategy. The morphology of CuO was related to the concentration of Cu²⁺ in the Cu(NO₃)₂ solution, UV illumination time, and the air annealing temperature. A possible reaction mechanism was proposed. In the photochemical deposition process, the OH⁻ was generated in the vicinity of the ZnO nanorod arrays and reacted with Cu²⁺ and NO₃⁻ in the solution to form Cu₂(NO₃)(OH)₃/ZnO heterojunction nanorod arrays firstly, which were converted into CuO/ZnO heterojunction nanorod arrays completely after air annealing at a low temperature. The fabricated CuO/ZnO heterojunction nanorod arrays exhibits a well-defined rectifying characteristic and an improved photo-response performance compared with pure ZnO nanorod arrays.