Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices

Controlled Memristic Behavior of Metal-Organic Framework as a Promising Memory Device

Metal-organic frameworks (MOFs) have attracted considerable interests for sensing, electrochemical, and catalytic applications. Most significantly, MOFs with highly accessible sites on their surface have promising potential for applications in high-performance computing architecture. In this paper, Mg-MOF-74 (a MOF built of Mg(II) ions linked by 2,5-dioxido-1,4-benzenedicarboxylate (DOBDC) ligands) and graphene oxide composites (Mg-MOF-74@GO) were first used as an active layer to fabricate ternary memory devices. A comprehensive investigation of the multi-bit data storage performance for Mg-MOF-74@GO composites was discussed and summarized. Moreover, the structure change of Mg-MOF-74@GO after introducing GO was thoroughly studied. The as-fabricated resistive random access memory (RRAM) devices exhibit a ternary memristic behavior with low SET voltage, an RHRS/RIRS/RLRS ratio of 103:102:1, superior retention (>104 s), and reliability performance (>102 cycles). Herein, Mg-MOF-74@GO composite films in constructing memory devices were presented with GO-mediated ternary memristic properties, where the distinct resistance states were controlled to achieve multi-bit data storage. The hydrogen bonding system and defects of GO adsorbed in Mg-MOF-74 are the reason for the ternary memristic behavior. The charge trapping assisted hopping is proposed as the operation mechanism, which is further confirmed by XRD and Raman spectra. The GO-mediated Mg-MOF-74 memory device exhibits potential applications in ultrahigh-density information storage systems and in-memory computing paradigms.

Green syntheses of graphene and its applications in internet of things (IoT)-a status review

Internet of Things (IoT) is a trending technological field that converts any physical object into a communicable smarter one by converging the physical world with the digital world. This innovative technology connects the device to the internet and provides a platform to collect real-time data, cloud storage, and analyze the collected data to trigger smart actions from a remote location via remote notifications, etc. Because of its wide-ranging applications, this technology can be integrated into almost all the industries. Another trending field with tremendous opportunities is Nanotechnology, which provides many benefits in several areas of life, and helps to improve many technological and industrial sectors. So, integration of IoT and Nanotechnology can bring about the very important field of Internet of Nanothings (IoNT), which can re-shape the communication industry. For that, data (collected from trillions of nanosensors, connected to billions of devices) would be the 'ultimate truth', which could be generated from highly efficient nanosensors, fabricated from various novel nanomaterials, one of which is graphene, the so-called 'wonder material' of the 21st century. Therefore, graphene-assisted IoT/IoNT platforms may revolutionize the communication technologies around the globe. In this article, a status review of the smart applications of graphene in the IoT sector is presented. Firstly, various green synthesis of graphene for sustainable development is elucidated, followed by its applications in various nanosensors, detectors, actuators, memory, and nano-communication devices. Also, the future market prospects are discussed to converge various emerging concepts like machine learning, fog/edge computing, artificial intelligence, big data, and blockchain, with the graphene-assisted IoT field to bring about the concept of 'all-round connectivity in every sphere possible'.

Multi-Bit Biomemristic Behavior for Neutral Polysaccharide Dextran Blended with Chitosan

Natural biomaterials applicable for biomemristors have drawn prominent attention and are of benefit to sustainability, biodegradability, biocompatibility, and metabolism. In this work, multi-bit biomemristors based on the neutral polysaccharide dextran were built using the spin-casting method, which was also employed to explore the effect of dextran on the ternary biomemristic behaviors of dextran–chitosan nanocomposites. The doping of 50 wt% dextran onto the bio-nanocomposite optimized the ratio of biomemristance in high-, intermediate-, and low-resistance states (10⁵:10⁴:1). The interaction between dextran and chitosan (hydrogen-bond network) was verified by Fourier transform infrared (FTIR) and Raman spectroscopy analysis; through this interaction, protons derived from the self-dissociation of water may migrate under the electric field, and so proton conduction may be the reason for the ternary biomemristic behaviors. Observations from X-ray diffraction (XRD), thermogravimetric analysis (TGA), and differential scanning calorimetry (DSC) analysis displayed that the 50 wt% dextran/50 wt% chitosan nanocomposite had the greatest amorphous ratio as well as the highest decomposition and peak transition temperatures in comparison with the other three dextran–chitosan nanocomposites. This work lays the foundation for neutral biomaterials applied to green ultra-high-density data-storage systems.

Graphene Oxide: Graphene Quantum Dot Nanocomposite for Better Memristic Switching Behaviors

Tristable memristic switching provides the capability for multi-bit data storage. In this study, all-inorganic multi-bit memory devices were successfully manufactured by the attachment of graphene quantum dots (GQDs) onto graphene oxide (GO) through a solution-processable method. By means of doping GQDs as charge-trapping centers, the device indium-tin oxide (ITO)/GO:0.5 wt%GQDs/Ni revealed controllable memristic switching behaviors that were tunable from binary to ternary, and remarkably enhanced in contrast with ITO/GO/Ni. It was found that the device has an excellent performance in memristic switching parameters, with a SET1, SET2 and RESET voltage of -0.9 V, -1.7 V and 5.15 V, as well as a high ON2/ON1/OFF current ratio (103:102:1), and a long retention time (104 s) together with 100 successive cycles. The conduction mechanism of the binary and ternary GO-based memory cells was discussed in terms of experimental data employing a charge trapping-detrapping mechanism. The reinforcement effect of GQDs on the memristic switching of GO through cycle-to-cycle operation has been extensively investigated, offering great potential application for multi-bit data storage in ultrahigh-density, nonvolatile memory.

Multi-Bit Biomemory Based on Chitosan: Graphene Oxide Nanocomposite with Wrinkled Surface

Chitosan (CS) is one of the commonly affluent polysaccharides that are attractive biomaterials as they are easily found in different organisms and are biocompatible. An environment-friendly multi-bit biomemory was successfully achieved on the basis of CS as a favorable candidate for resistive-switching memory applications. By incorporating graphene oxide (GO) into CS, the multi-bit biomemory device (indium tin oxide (ITO)/CS:GO/Ni) was obtained through the solution-processable method, which had a high current ratio among a high, intermediate, and low resistance state as well as a low SET/RESET voltage. GO acting as trapping sites in the active layer might be responsible for the biomemory mechanism. This research opens up a new avenue towards renewable and environmentally benign CS-based materials for biodegradable electronic devices.

Memristive Non-Volatile Memory Based on Graphene Materials

Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in the industry of neuromorphic systems and artificial intelligence (AI), due its advantages such as fast operation speed, low power consumption, and high device density. Graphene and related materials (GRMs), especially graphene oxide (GO), acting as active materials for RRAM devices, are considered as a promising alternative to other materials including metal oxides and perovskite materials. Herein, an overview of GRM-based RRAM devices is provided, with discussion about the properties of GRMs, main operation mechanisms for resistive switching (RS) behavior, figure of merit (FoM) summary, and prospect extension of GRM-based RRAM devices. With excellent physical and chemical advantages like intrinsic Young's modulus (1.0 TPa), good tensile strength (130 GPa), excellent carrier mobility (2.0 × 105 cm2∙V-1∙s-1), and high thermal (5000 Wm-1∙K-1) and superior electrical conductivity (1.0 × 106 S∙m-1), GRMs can act as electrodes and resistive switching media in RRAM devices. In addition, the GRM-based interface between electrode and dielectric can have an effect on atomic diffusion limitation in dielectric and surface effect suppression. Immense amounts of concrete research indicate that GRMs might play a significant role in promoting the large-scale commercialization possibility of RRAM devices.

Biomemristic Behavior for Water-Soluble Chitosan Blended with Graphene Quantum Dot Nanocomposite

Bionanocomposite has promising biomemristic behaviors for data storage inspired by a natural biomaterial matrix. Carboxylated chitosan (CCS), a water-soluble derivative of chitosan avoiding the acidic salt removal, has better biodegradability and bioactivity, and is able to absorb graphene quantum dots (GQDs) employed as charge-trapping centers. In this investigation, biomemristic devices based on water-soluble CCS:GQDs nanocomposites were successfully achieved with the aid of the spin-casting method. The promotion of binary biomemristic behaviors for Ni/CCS:GQDs/indium-tin-oxide (ITO) was evaluated for distinct weight ratios of the chemical components. Fourier transform infrared spectroscopy, Raman spectroscopy (temperature dependence), thermogravimetric analyses and scanning electron microscopy were performed to assess the nature of the CCS:GQDs nanocomposites. The fitting curves on the experimental data further confirmed that the conduction mechanism might be attributed to charge trapping-detrapping in the CCS:GQDs nanocomposite film. Advances in water-soluble CCS-based electronic devices would open new avenues in the biocompatibility and integration of high-performance biointegrated electronics.

Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric

Resistive random access memory (RRAM) devices with Ni/AlO_x/Pt-structure were manufactured by deposition of a solution-based aluminum oxide (AlO_x) dielectric layer which was subsequently annealed at temperatures from 200 °C to 300 °C, in increments of 25 °C. The devices displayed typical bipolar resistive switching characteristics. Investigations were carried out on the effect of different annealing temperatures for associated RRAM devices to show that performance was correlated with changes of hydroxyl group concentration in the AlO_x thin films. The annealing temperature of 250 °C was found to be optimal for the dielectric layer, exhibiting superior performance of the RRAM devices with the lowest operation voltage (<1.5 V), the highest ON/OFF ratio (>10⁴), the narrowest resistance distribution, the longest retention time (>10⁴ s) and the most endurance cycles (>150).