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Wang L, Zhang Y, Zhang P, Wen D. Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3976. [PMID: 36432261 PMCID: PMC9695640 DOI: 10.3390/nano12223976] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/18/2022] [Revised: 10/30/2022] [Accepted: 11/09/2022] [Indexed: 06/16/2023]
Abstract
Biomaterials have attracted attention as a major material for biodegradable and transient electronic devices. In this work, biocompatible gelatin-doped graphene quantum dot films are reported as active layer switching memories with good electrical properties and physical transient properties. Such nonvolatile memory devices have write-once-read-many electrical properties and a concentrated distribution of low-resistance and high-resistance states. It provides a solution for the current obstacle of resistive memory storage and computing integration. Based on the sensitivity of the device to ultraviolet light, the "OR gate" logic operation is completed. Furthermore, the active layer can be dissolved in deionized water within 15 min, and the gelatin substrate-based device can be destroyed immediately in water, indicating the potential biodegradation and physical transient properties of our fabricated device. Biocompatible memory devices are environmentally friendly, sustainable for safe storage, and low-cost, making them ideal for storage applications.
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Affiliation(s)
- Lu Wang
- Correspondence: ; Tel.: +86-188-4502-5666
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Wang L, Zhang Y, Wen D. Flexible Nonvolatile Bioresistive Random Access Memory with an Adjustable Memory Mode Capable of Realizing Logic Functions. NANOMATERIALS 2021; 11:nano11081973. [PMID: 34443804 PMCID: PMC8401196 DOI: 10.3390/nano11081973] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/25/2021] [Revised: 07/27/2021] [Accepted: 07/28/2021] [Indexed: 01/24/2023]
Abstract
In this study, a flexible bioresistive memory with an aluminum/tussah hemolymph/indium tin oxide/polyethylene terephthalate structure is fabricated by using a natural biological material, tussah hemolymph (TH), as the active layer. When different compliance currents (Icc) are applied to the device, it exhibits different resistance characteristics. When 1 mA is applied in the positive voltage range and 100 mA is applied in the negative voltage range, the device exhibits bipolar resistive switching behavior. Additionally, when 1 mA is applied in both the positive- and negative-voltage ranges, the device exhibits write-once-read-many-times (WORM) characteristics. The device has good endurance, with a retention time exceeding 104 s. After 104 bending cycles, the electrical characteristics remain constant. This memory device can be applied for “AND” and “OR” logic operations in programmable logic circuits. The prepared flexible and transparent biomemristor made of pure natural TH provides a promising new approach for realizing environmentally friendly and biocompatible flexible memory, nerve synapses, and wearable electronic devices.
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Affiliation(s)
- Lu Wang
- Correspondence: ; Tel.: +86-188-4502-5666
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Zrinski I, Mardare CC, Jinga LI, Kollender JP, Socol G, Minenkov A, Hassel AW, Mardare AI. Electrolyte-Dependent Modification of Resistive Switching in Anodic Hafnia. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:666. [PMID: 33800460 PMCID: PMC8001223 DOI: 10.3390/nano11030666] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/02/2021] [Revised: 03/02/2021] [Accepted: 03/03/2021] [Indexed: 11/16/2022]
Abstract
Anodic HfO2 memristors grown in phosphate, borate, or citrate electrolytes and formed on sputtered Hf with Pt top electrodes are characterized at fundamental and device levels. The incorporation of electrolyte species deep into anodic memristors concomitant with HfO2 crystalline structure conservation is demonstrated by elemental analysis and atomic scale imaging. Upon electroforming, retention and endurance tests are performed on memristors. The use of borate results in the weakest memristive performance while the citrate demonstrates clear superior memristive properties with multilevel switching capabilities and high read/write cycling in the range of 106. Low temperature heating applied to memristors shows a direct influence on their behavior mainly due to surface release of water. Citrate-based memristors show remarkable properties independent on device operation temperatures up to 100 °C. The switching dynamic of anodic HfO2 memristors is discussed by analyzing high resolution transmission electron microscope images. Full and partial conductive filaments are visualized, and apart from their modeling, a concurrency of filaments is additionally observed. This is responsible for the multilevel switching mechanism in HfO2 and is related to device failure mechanisms.
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Affiliation(s)
- Ivana Zrinski
- Institute of Chemical Technology of Inorganic Materials, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria; (I.Z.); (C.C.M.); (J.P.K.); (A.W.H.)
| | - Cezarina Cela Mardare
- Institute of Chemical Technology of Inorganic Materials, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria; (I.Z.); (C.C.M.); (J.P.K.); (A.W.H.)
- Danube Private University, Steiner Landstrasse 124, 3500 Krems-Stein, Austria
| | - Luiza-Izabela Jinga
- National Institute for Lasers, Plasma and Radiation Physics, Atomistilor Str. 409, 077125 Bucharest-Magurele, Romania; (L.-I.J.); (G.S.)
| | - Jan Philipp Kollender
- Institute of Chemical Technology of Inorganic Materials, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria; (I.Z.); (C.C.M.); (J.P.K.); (A.W.H.)
- EMPA, Laboratory for Joining Technologies & Corrosion, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, 8600 Dübendorf, Switzerland
| | - Gabriel Socol
- National Institute for Lasers, Plasma and Radiation Physics, Atomistilor Str. 409, 077125 Bucharest-Magurele, Romania; (L.-I.J.); (G.S.)
| | - Alexey Minenkov
- Christian Doppler Laboratory for Nanoscale Phase Transformations, Center of Surface and Nanoanalytics, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria;
| | - Achim Walter Hassel
- Institute of Chemical Technology of Inorganic Materials, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria; (I.Z.); (C.C.M.); (J.P.K.); (A.W.H.)
| | - Andrei Ionut Mardare
- Institute of Chemical Technology of Inorganic Materials, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria; (I.Z.); (C.C.M.); (J.P.K.); (A.W.H.)
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Li L. Graphene Oxide: Graphene Quantum Dot Nanocomposite for Better Memristic Switching Behaviors. NANOMATERIALS (BASEL, SWITZERLAND) 2020; 10:E1448. [PMID: 32722171 PMCID: PMC7466482 DOI: 10.3390/nano10081448] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/27/2020] [Revised: 07/15/2020] [Accepted: 07/21/2020] [Indexed: 01/17/2023]
Abstract
Tristable memristic switching provides the capability for multi-bit data storage. In this study, all-inorganic multi-bit memory devices were successfully manufactured by the attachment of graphene quantum dots (GQDs) onto graphene oxide (GO) through a solution-processable method. By means of doping GQDs as charge-trapping centers, the device indium-tin oxide (ITO)/GO:0.5 wt%GQDs/Ni revealed controllable memristic switching behaviors that were tunable from binary to ternary, and remarkably enhanced in contrast with ITO/GO/Ni. It was found that the device has an excellent performance in memristic switching parameters, with a SET1, SET2 and RESET voltage of -0.9 V, -1.7 V and 5.15 V, as well as a high ON2/ON1/OFF current ratio (103:102:1), and a long retention time (104 s) together with 100 successive cycles. The conduction mechanism of the binary and ternary GO-based memory cells was discussed in terms of experimental data employing a charge trapping-detrapping mechanism. The reinforcement effect of GQDs on the memristic switching of GO through cycle-to-cycle operation has been extensively investigated, offering great potential application for multi-bit data storage in ultrahigh-density, nonvolatile memory.
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Affiliation(s)
- Lei Li
- HLJ Province Key Laboratories of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China;
- Research Center for Fiber Optic Sensing Technology National Local Joint Engineering, Heilongjiang University, Harbin 150080, China
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Li L. Biomemristic Behavior for Water-Soluble Chitosan Blended with Graphene Quantum Dot Nanocomposite. NANOMATERIALS (BASEL, SWITZERLAND) 2020; 10:E559. [PMID: 32244863 PMCID: PMC7153374 DOI: 10.3390/nano10030559] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/26/2020] [Revised: 03/14/2020] [Accepted: 03/15/2020] [Indexed: 11/16/2022]
Abstract
Bionanocomposite has promising biomemristic behaviors for data storage inspired by a natural biomaterial matrix. Carboxylated chitosan (CCS), a water-soluble derivative of chitosan avoiding the acidic salt removal, has better biodegradability and bioactivity, and is able to absorb graphene quantum dots (GQDs) employed as charge-trapping centers. In this investigation, biomemristic devices based on water-soluble CCS:GQDs nanocomposites were successfully achieved with the aid of the spin-casting method. The promotion of binary biomemristic behaviors for Ni/CCS:GQDs/indium-tin-oxide (ITO) was evaluated for distinct weight ratios of the chemical components. Fourier transform infrared spectroscopy, Raman spectroscopy (temperature dependence), thermogravimetric analyses and scanning electron microscopy were performed to assess the nature of the CCS:GQDs nanocomposites. The fitting curves on the experimental data further confirmed that the conduction mechanism might be attributed to charge trapping-detrapping in the CCS:GQDs nanocomposite film. Advances in water-soluble CCS-based electronic devices would open new avenues in the biocompatibility and integration of high-performance biointegrated electronics.
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Affiliation(s)
- Lei Li
- HLJ Province Key Laboratories of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China; ; Tel.: +86-136-7462-1831
- Research Center for Fiber Optic Sensing Technology National Local Joint Engineering, Heilongjiang University, Harbin 150080, China
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Jimenéz-Vivanco MR, García G, Carrillo J, Morales-Morales F, Coyopol A, Gracia M, Doti R, Faubert J, Lugo JE. Porous Si-SiO 2 UV Microcavities to Modulate the Responsivity of a Broadband Photodetector. NANOMATERIALS 2020; 10:nano10020222. [PMID: 32012926 PMCID: PMC7075018 DOI: 10.3390/nano10020222] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/28/2019] [Revised: 01/07/2020] [Accepted: 01/09/2020] [Indexed: 01/07/2023]
Abstract
Porous Si-SiO2 UV microcavities are used to modulate a broad responsivity photodetector (GVGR-T10GD) with a detection range from 300 to 510 nm. The UV microcavity filters modified the responsivity at short wavelengths, while in the visible range the filters only attenuated the responsivity. All microcavities had a localized mode close to 360 nm in the UV-A range, and this meant that porous Si-SiO2 filters cut off the photodetection range of the photodetector from 300 to 350 nm, where microcavities showed low transmission. In the short-wavelength range, the photons were absorbed and did not contribute to the photocurrent. Therefore, the density of recombination centers was very high, and the photodetector sensitivity with a filter was lower than the photodetector without a filter. The maximum transmission measured at the localized mode (between 356 and 364 nm) was dominant in the UV-A range and enabled the flow of high energy photons. Moreover, the filters favored light transmission with a wavelength from 390 nm to 510 nm, where photons contributed to the photocurrent. Our filters made the photodetector more selective inside the specific UV range of wavelengths. This was a novel result to the best of our knowledge.
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Affiliation(s)
- María R. Jimenéz-Vivanco
- Semiconductor Devices Research Center, ICUAP, BUAP, Ciudad Universitaria, Puebla Pue. C.P. 72570, Mexico; (M.R.J.-V.); (G.G.); (J.C.); (A.C.)
| | - Godofredo García
- Semiconductor Devices Research Center, ICUAP, BUAP, Ciudad Universitaria, Puebla Pue. C.P. 72570, Mexico; (M.R.J.-V.); (G.G.); (J.C.); (A.C.)
| | - Jesús Carrillo
- Semiconductor Devices Research Center, ICUAP, BUAP, Ciudad Universitaria, Puebla Pue. C.P. 72570, Mexico; (M.R.J.-V.); (G.G.); (J.C.); (A.C.)
| | - Francisco Morales-Morales
- Optics Research Center, A.C., Loma del Bosque 115, Col. Lomas del Campestre León, León C.P. 37150, Gto, Mexico;
| | - Antonio Coyopol
- Semiconductor Devices Research Center, ICUAP, BUAP, Ciudad Universitaria, Puebla Pue. C.P. 72570, Mexico; (M.R.J.-V.); (G.G.); (J.C.); (A.C.)
| | - Miguel Gracia
- IFUAP, Benemérita Universidad Autónoma de Puebla, Ed. IF2, Col. San Manuel, Puebla C.P. 72570, Mexico;
| | - Rafael Doti
- Faubert Lab, School of Optometry, University de Montreal, Montreal, QC H3T 1P1, Canada; (R.D.); (J.F.)
| | - Jocelyn Faubert
- Faubert Lab, School of Optometry, University de Montreal, Montreal, QC H3T 1P1, Canada; (R.D.); (J.F.)
| | - J. Eduardo Lugo
- Faubert Lab, School of Optometry, University de Montreal, Montreal, QC H3T 1P1, Canada; (R.D.); (J.F.)
- Correspondence: ; Tel.: +1-514-343-6111 (ext. 1685)
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