Two-Dimensional Hybrid Composites of SnS2 Nanosheets Array Film with Graphene for Enhanced Photoelectric Performance

Fabrication of MoS2/C60 Nanolayer Field-Effect Transistor for Ultrasensitive Detection of miRNA-155

As a major public health issue, early cancer detection is of great significance. A field-effect transistor (FET) based on an MoS₂/C₆₀ composite nanolayer as the channel material enhances device performance by adding a light source, allowing the ultrasensitive detection of cancer-related miRNA. In this work, atomic layer deposition (ALD) was used to deposit MoS₂ layer by layer, and C₆₀ was deposited by an evaporation coater to obtain a composite nanolayer with good surface morphology as the channel material of the FET. Based on the good absorption of C₆₀ by blue-violet light, a 405 nm laser was selected to irradiate the channel material, improving the function of FET biosensors. A linear detection window from 10 pM to 1 fM with an ultralow detection limit of 5.16 aM for miRNA-155 was achieved.

Ultrafast Photocarrier Dynamics in Vertically Aligned SnS2 Nanoflakes Probing with Transient Terahertz Spectroscopy

By employing optical pump Terahertz (THz) probe spectroscopy, ultrafast photocarrier dynamics of a two-dimensional (2D) semiconductor, SnS2 nanoflake film, has been investigated systematically at room temperature. The dynamics of photoexcitation is strongly related to the density of edge sites and defects in the SnS2 nanoflakes, which is controllable by adjusting the height of vertically aligned SnS2 during chemical vapor deposition growth. After photoexcitation at 400 nm, the transient THz photoconductivity response of the films can be well fitted with bi-exponential decay function. The fast and slow processes are shorter in the thinner film than in the thicker sample, and both components are independent on the pump fluence. Hereby, we propose that edge-site trapping as well as defect-assisted electron-hole recombination are responsible for the fast and slow decay progress, respectively. Our experimental results demonstrate that the edge sites and defects in SnS2 nanoflakes play a dominant role in photocarrier relaxation, which is crucial in understanding the photoelectrochemical performance of SnS2 nanoflakes.

Synthesis and Applications of Dimensional SnS2 and SnS2/Carbon Nanomaterials

Dimensional nanomaterials can offer enhanced application properties benefiting from their sizes and morphological orientations. Tin disulfide (SnS₂) and carbon are typical sources of dimensional nanomaterials. SnS₂ is a semiconductor with visible light adsorption properties and has shown high energy density and long cycle life in energy storage processes. The integration of SnS₂ and carbon materials has shown enhanced visible light absorption and electron transmission efficiency. This helps to alleviate the volume expansion of SnS₂ which is a limitation during energy storage processes and provides a favorable bandgap in photocatalytic degradation. Several innovative approaches have been geared toward controlling the size, shape, and hybridization of SnS₂/Carbon composite nanostructures. However, dimensional nanomaterials of SnS₂ and SnS₂/Carbon have rarely been discussed. This review summarizes the synthesis methods of zero-, one-, two-, and three-dimensional SnS₂ and SnS₂/Carbon composite nanomaterials through wet and solid-state synthesis strategies. Moreover, the unique properties that promote their advances in photocatalysis and energy conversion and storage are discussed. Finally, some remarks and perspectives on the challenges and opportunities for exploring advanced SnS₂/Carbon nanomaterials are presented.

Recent Progress on Graphene Flexible Photodetectors

In recent years, optoelectronics and related industries have developed rapidly. As typical optoelectronics devices, photodetectors (PDs) are widely applied in various fields. The functional materials in traditional PDs exhibit high hardness, and the performance of these rigid detectors is thus greatly reduced upon their stretching or bending. Therefore, the development of new flexible PDs with bendable and foldable functions is of great significance and has much interest in wearable, implantable optoelectronic devices. Graphene with excellent electrical and optical performance constructed on various flexible and rigid substrates has great potential in PDs. In this review, recent research progress on graphene-based flexible PDs is outlined. The research states of graphene conductive films are summarized, focusing on PDs based on single-component graphene and mixed-structure graphene, with a systematic analysis of their optical and mechanical performance, and the techniques for optimizing the PDs are also discussed. Finally, a summary of the current applications of graphene flexible PDs and perspectives is provided, and the remaining challenges are discussed.