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Wang M, Jiang H, Ma H, Zhao C, Zhao Y, Wang Z, Xu X, Shao J. A corrugated epsilon-nearzero saturable absorber for a high-performance 1.3 μm solid-state bulk laser. NANOSCALE 2023; 15:17434-17442. [PMID: 37855687 DOI: 10.1039/d3nr04161a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/20/2023]
Abstract
Epsilon-near-zero (ENZ) materials with vanishing permittivity exhibit unprecedented optical nonlinearity within subwavelength propagation lengths in the ENZ region, making them promising photoelectric materials that have achieved exciting results in ultrafast pulse laser modulations. In this study, we fabricated a novel saturable absorber (SA) based on a corrugated indium tin oxide (CITO) film with a symmetrical geometry using a low-cost self-assembly process. The strong saturable absorption of the CITO film triggered by the ENZ effect at normal incidence was comparable to that of the planar indium tin oxide (ITO) film at an optimal 60° incidence (TM polarization) at 1340 nm. In addition, the strong nonlinear optical properties of the CITO film were not limited by the incident angle and polarization state of the pump laser over a wide range of 0-20°. Benefiting from the excellent saturable absorption of CITO-based SA at normal incidence, a Q-switching operation with CITO-based SA at 1.34 μm was achieved in a Nd:YVO4 solid-state laser system, obtaining pulses of a duration of 85.6 ns, which was one order of magnitude narrower than that of the planar ITO-based SA. This study presents a new strategy for developing high-performance ENZ-based SAs and ultrafast lasers.
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Affiliation(s)
- Mengxia Wang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
| | - Hang Jiang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
| | - Hao Ma
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
| | - Chuanrui Zhao
- State Key Lab of Crystal Materials, Shandong University, Jinan, 250100, China.
| | - Yuanan Zhao
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
| | - Zhengping Wang
- State Key Lab of Crystal Materials, Shandong University, Jinan, 250100, China.
| | - Xinguang Xu
- State Key Lab of Crystal Materials, Shandong University, Jinan, 250100, China.
| | - Jianda Shao
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China.
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Dai T, Chang J, Deng Z, Li H, Liu X, Ni H, Sun J. Effective switching of an all-solid-state mode-locked laser by a graphene modulator. OPTICS EXPRESS 2022; 30:16530-16540. [PMID: 36221494 DOI: 10.1364/oe.459074] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2022] [Accepted: 04/21/2022] [Indexed: 06/16/2023]
Abstract
Although sophisticated novel saturable absorber materials are available for the development of ultrafast lasers, innovative approaches and devices play an increasingly important role in continuously adjusting mode-locked lasers with electrical gating. In this study, electrically switched operational regimes of an Nd:YVO4 all-solid-state mode-locked laser with a high modulation ratio (from 900 ns to 15 ps) are demonstrated for the first time. The laser can automatically switch multiple operation regimes with the assistance of electrical signals using techniques such as Q-switching, Q-switched mode-locking (QML), and continuous-wave mode-locking (CWML). The device is operated at an ultralow electrical modulation power (0.1 nW) to generate sub 15 ps pulses with a high average output power (as much as 800 mW) from a mode-locked laser operating at 1064 nm. The results verify the reversible switching of the operational regimes from QML to CWML and provide a basis for exploring their applications in electro-optical devices.
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Hao Q, Ye K, Dong M, Liu J, Liu Z. Nonlinear optical response of a monolayer WS 2 and the application of a hundred-MHz nanosecond laser. OPTICS EXPRESS 2021; 29:36634-36643. [PMID: 34809070 DOI: 10.1364/oe.441281] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/23/2021] [Accepted: 10/12/2021] [Indexed: 06/13/2023]
Abstract
High quality monolayer WS2 was successfully fabricated by chemical vapor deposition method. The nonlinear optical response of monolayer WS2 is demonstrated for the first time. Due to the relatively low modulation depth of 1.4% and saturable intensity of 68.6 kW/cm2 of monolayer WS2, a robust continuous-wave mode-locked (CWML) nanosecond laser with a repetition rate of 93.1 MHz is obtained. To the best of our knowledge, this is the highest repetition rate of nanosecond pulses generated from CWML lasers. This work provides an effective approach to obtaining nanosecond pulsed lasers with repetition rates of hundred-megahertz.
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Dong S, Zhang C, Zhou Y, Miao X, Zong T, Gu M, Zhan Z, Chen D, Ma H, Gui W, Liu J, Cheng C, Cheng C. High-Stability Hybrid Organic-Inorganic Perovskite (CH 3NH 3PbBr 3) in SiO 2 Mesopores: Nonlinear Optics and Applications for Q-Switching Laser Operation. NANOMATERIALS 2021; 11:nano11071648. [PMID: 34201580 PMCID: PMC8306186 DOI: 10.3390/nano11071648] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/03/2021] [Revised: 06/15/2021] [Accepted: 06/17/2021] [Indexed: 01/11/2023]
Abstract
Hybrid organic-inorganic perovskite shows a great potential in the field of photoelectrics. Embedding methyl ammonium lead bromide (MAPbBr3) in a mesoporous silica (mSiO2) layer is an effective method for maintaining optical performance of MAPbBr3 at room temperature. In this work, we synthesized MAPbBr3 quantum dots, embedding them in the mSiO2 layer. The nonlinear optical responses of this composite thin film have been investigated by using the Z-scan technique at a wavelength of 800 nm. The results show plural nonlinear responses in different intensities, corresponding to one- and two-photon processing. Our results support that composites possess saturation intensity of ~27.29 GW/cm2 and varying nonlinear coefficients. The composite thin films show high stability under ultrafast laser irradiating. By employing the composite as a saturable absorber, a passively Q-switching laser has been achieved on a Nd:YVO4 all-solid-state laser platform to generate a laser at ~1 μm.
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Affiliation(s)
- Siyu Dong
- College of Physics and Electronics, Shandong Normal University, Jinan 250014, China; (S.D.); (C.Z.); (Y.Z.); (X.M.); (T.Z.); (M.G.); (Z.Z.); (H.M.); (W.G.); (C.C.)
| | - Cheng Zhang
- College of Physics and Electronics, Shandong Normal University, Jinan 250014, China; (S.D.); (C.Z.); (Y.Z.); (X.M.); (T.Z.); (M.G.); (Z.Z.); (H.M.); (W.G.); (C.C.)
| | - Yuxiang Zhou
- College of Physics and Electronics, Shandong Normal University, Jinan 250014, China; (S.D.); (C.Z.); (Y.Z.); (X.M.); (T.Z.); (M.G.); (Z.Z.); (H.M.); (W.G.); (C.C.)
| | - Xiaona Miao
- College of Physics and Electronics, Shandong Normal University, Jinan 250014, China; (S.D.); (C.Z.); (Y.Z.); (X.M.); (T.Z.); (M.G.); (Z.Z.); (H.M.); (W.G.); (C.C.)
| | - Tiantian Zong
- College of Physics and Electronics, Shandong Normal University, Jinan 250014, China; (S.D.); (C.Z.); (Y.Z.); (X.M.); (T.Z.); (M.G.); (Z.Z.); (H.M.); (W.G.); (C.C.)
| | - Manna Gu
- College of Physics and Electronics, Shandong Normal University, Jinan 250014, China; (S.D.); (C.Z.); (Y.Z.); (X.M.); (T.Z.); (M.G.); (Z.Z.); (H.M.); (W.G.); (C.C.)
| | - Zijun Zhan
- College of Physics and Electronics, Shandong Normal University, Jinan 250014, China; (S.D.); (C.Z.); (Y.Z.); (X.M.); (T.Z.); (M.G.); (Z.Z.); (H.M.); (W.G.); (C.C.)
| | - Duo Chen
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Science), Jinan 250353, China;
| | - Hong Ma
- College of Physics and Electronics, Shandong Normal University, Jinan 250014, China; (S.D.); (C.Z.); (Y.Z.); (X.M.); (T.Z.); (M.G.); (Z.Z.); (H.M.); (W.G.); (C.C.)
| | - Weiling Gui
- College of Physics and Electronics, Shandong Normal University, Jinan 250014, China; (S.D.); (C.Z.); (Y.Z.); (X.M.); (T.Z.); (M.G.); (Z.Z.); (H.M.); (W.G.); (C.C.)
| | - Jie Liu
- College of Physics and Electronics, Shandong Normal University, Jinan 250014, China; (S.D.); (C.Z.); (Y.Z.); (X.M.); (T.Z.); (M.G.); (Z.Z.); (H.M.); (W.G.); (C.C.)
- Correspondence: (J.L.); (C.C.)
| | - Chen Cheng
- College of Physics and Electronics, Shandong Normal University, Jinan 250014, China; (S.D.); (C.Z.); (Y.Z.); (X.M.); (T.Z.); (M.G.); (Z.Z.); (H.M.); (W.G.); (C.C.)
- Correspondence: (J.L.); (C.C.)
| | - Chuanfu Cheng
- College of Physics and Electronics, Shandong Normal University, Jinan 250014, China; (S.D.); (C.Z.); (Y.Z.); (X.M.); (T.Z.); (M.G.); (Z.Z.); (H.M.); (W.G.); (C.C.)
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Zhang H, Peng J, Yang X, Ma C, Zhao Q, Chen G, Su X, Li D, Zheng Y. Passively Q-switched Nd:YVO 4 laser operating at 1.3 µm with a graphene oxide and ferroferric-oxide nanoparticle hybrid as a saturable absorber. APPLIED OPTICS 2020; 59:1741-1745. [PMID: 32225681 DOI: 10.1364/ao.383013] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2019] [Accepted: 01/13/2020] [Indexed: 06/10/2023]
Abstract
A self-made saturable absorber (SA) based on hybridized graphene oxide (GO) and ${{\rm Fe}_{3}}{{\rm O}_{4}}$Fe3O4 nanoparticles (FONP) was inserted into a linear cavity to generate a passively $ Q $Q-switched solid-state ${\rm Nd}\text:{{\rm YVO}_4}$Nd:YVO4 laser operating at the 1.3 µm waveband. The laser had a minimum pulse width of 163 ns and a maximum repetition rate of 314 kHz. This experiment, to the best of our knowledge, is the first to demonstrate that hybridized GO and FONP (GO-FONP) can be used as an SA in passively $ Q $Q-switched pulse lasers. Results show that GO-FONP has the potential to be used for passively $ Q $Q-switched laser generation.
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