Improved Laser Damage Threshold of In2Se3 Saturable Absorber by PVD for High-Power Mode-Locked Er-Doped Fiber Laser

In-Sb Covalent Bonds over Sb2Se3/In2Se3 Heterojunction for Enhanced Photoelectrochemical Water Splitting

Antimony selenide is a promising P-type photocatalyst, but it has a large number of deep energy level defects, leading to severe carrier recombination. The construction of a heterojunction is a common way to resolve this problem. However, the conventional heterojunction system inevitably introduces interface defects. Herein, we employ in situ synthesis to epitaxially grow In2Se3 nanosheets on Sb2Se3 nanorods and form In-Sb covalent interfacial bonds. This petal-shaped heterostructure reduced interface defects and enhanced the efficiency of carrier separation and transport. In this work, the photocurrent density in the proposed Sb2Se3/In2Se3 photocathode is 0.485 mA cm-2 at 0 VRHE, which is 30 times higher than that of pristine Sb2Se3 and it has prominent long-term stability for 24 h without obvious decay. The results reveal that the synergy of the bidirectional built-in electric field constructed between In2Se3 and Sb2Se3 and the solid In-Sb interfacial bonds together build a high-efficiency transport channel for the photogenerated carriers that display enhanced photoelectrochemical (PEC) water-splitting performance. This work provides efficient guidance for reducing interface defects via the in situ synthesis and construction of interfacial bonds.

High-Energy Mode-Locked Pulse Er-Doped Fiber Laser-Based GeTe as Saturable Absorber

High-energy Er-doped fiber laser with high conversion efficiency is reported, which is mode-locked by a germanium telluride (GeTe)-based saturable absorber (SA). By adjusting the direction of the polarization controller (PC), a high-energy pulse with a central wavelength of 1533.1 nm and a fundamental repetition frequency of 1.58 MHz is achieved. Under the pump power of 450.1 mW, the maximum average output power is 50.48 mW, and the single-pulse energy is 32 nJ. It is worth noting that the optical-to-optical conversion efficiency has reached about 11.2%. The experimental results indicate that GeTe performs excellently as SAs for obtaining mode-locked fiber lasers and plays an extremely important role in high-energy fiber lasers.

Generation of mode-locked states of conventional solitons and bright-dark solitons in graphene mode-locked fiber laser

This paper proposes a mode-locked fiber laser based on graphene-coated microfiber. The total length of the fiber laser resonant cavity is 31.34 m. Under the condition of stable output of bright-dark soliton pairs from the fiber laser, dual-wavelength tuning is realized by adjusting the polarization controller (PC), and the wavelength tuning range is 11 nm. Furthermore, the effects of polarization states on bright-dark solitons are studied. It is demonstrated that the mode-locking state can be switched between conventional solitons and bright-dark solitons in the graphene mode-locked fiber laser. Bright-dark soliton pairs with different shapes and nanosecond pulse width can be obtained by adjusting the PC and pump power.

Soliton phenomena in normal and anomalous dispersion regions in Er-doped mode-locked fiber lasers based on Cr2Si2Te6 saturable absorbers

Investigations of optical solitons have always been a hot topic due to their important scientific research value. In recent years, ultrafast lasers based on two-dimensional materials such as saturable absorbers (SAs) have become the focus of optical soliton research. In this work, various soliton operations are demonstrated in Er-doped fiber lasers (EDFLs) based on ${{\rm Cr}_2}{{\rm Si}_2}{{\rm Te}_6}$ SAs. First, a low-threshold passively mode-locked EDFL with traditional soliton output is constructed, and the pump threshold is as low as 10.1 mW. Second, by adjusting the net dispersion of the cavity, stable dissipative soliton operation can also be obtained. Traditional soliton mode-locked operation with controllable Kelly sidebands from first order to fourth order is realized by adjusting the pump power in a double-ended pumped structure, and the SNR is as high as 55 dB. All results prove that ${{\rm Cr}_2}{{\rm Si}_2}{{\rm Te}_6}$ used as SA material has great potential and wide application prospects in investigating optical soliton operations in mode-locked fiber lasers with both normal and anomalous dispersion.

Highly Damage-Resistant Thin Film Saturable Absorber Based on Mechanically Functionalized SWCNTs

Thin-film saturable absorbers (SAs) are extensively used in mode-locked fiber laser due to the robust and simple application methods that arise because SAs are alignment-free and self-standing. Single-walled carbon nanotubes (SWCNTs) are the most suitable low dimensional material uesd for SAs because of their high nonlinearity and the wavelength control of absorption based on tube diameters. The most challenging problem with the use of CNT-based thin film SAs is thermal damage caused during high power laser operation, which mainly occurs due to aggregation of CNTs. We have demonstrated improved thermal damage resistance and enhanced durability of a film-type SA based on functionalization of SWCNTs, which were subjected to a mechanical functionalization procedure to induce covalent structural modifications on the SWCNT surface. Increased intertube distance was shown by X-ray diffraction, and partial functionalization was shown by Raman spectroscopy. This physical change had a profound effect on integration with the host polymer and resolved aggregation problems. A free-standing SA was fabricated by the drop casting method, and improved uniformity was shown by scanning electron microscopy. The SA was analyzed using various structural and thermal evaluation techniques (Raman spectroscopy, thermogravimetric analysis, etc.). Damage tests at different optical powers were also performed. To the best of our knowledge, a comprehensive analysis of a film-type SA is reported here for the first time. The partially functionalized SWCNT (fSWCNT) SA shows significant structural integrity after intense damage tests and a modulation depth of 25.3%. In passively mode-locked laser operation, a pulse width of 152 fs is obtained with a repetition rate of 77.8 MHz and a signal-to-noise ratio of  75 dB. Stable operation of the femtosecond fiber laser over 200 h verifies the enhanced durability of the fSWCNT SA.

Indium selenide saturable absorber for high-energy nanosecond Q-switched pulse generation

As a kind of III/VI group compound 2D layered material, indium selenide (In₂Se₃) has attracted tremendous interest because of its favorable optoelectronic characteristics. Here, magnetron sputtering deposition (MSD) technology was employed to prepare an In₂Se₃-based saturable absorber (SA). The nonlinear optical properties of this SA, whose modulation depth (ΔT) is 6.18%, were studied. With the aid of its saturable absorption, a stable two-wavelength Q-switching Er-doped fiber (EDF) laser was established. When pump power was adjusted to 900 mW, the output power was increased to 63.84 mW. The shortest pulse duration and maximum pulse energy were estimated to be 556 ns and 376 nJ, respectively. The signal-to-noise ratio of 70 dB proves this fiber laser has high stability. In comparison with previous works, the laser performance in this study is improved significantly. These results indicate that the In₂Se₃ holds promise as an outstanding candidate for high-energy pulse generation and will advance the development of In₂Se₃-based nonlinear photonics devices.