Low-Frequency Content of THz Emission from Two-Color Femtosecond Filament

Recording the angular dispersion of a terahertz beam into its frequency spectrum for fast measurements

The frequency-dependent divergence angle of terahertz (THz) beams is a crucial aspect in understanding the generation and transmission of broadband THz waves. However, traditional beam profiling methods, such as 1D or 2D translation/rotation scanning detection, are time-consuming and wasteful of THz energy, making them unsuitable for fast measurement applications, such as single-shot THz generation and detection. Here, we proposed a simple solution that involves passing the THz beam through a core-anti-resonant reflective (CARR) cavity (e.g., a paper tube). The spatial information of the beam is then recorded into its frequency spectrum, which can be easily detected by a following traditional THz time-domain spectroscopy (TDS) system or a single-shot sampling setup. Our method enables the acquisition of the angular dispersion without repetitive measurements, and represents a significant step forward in fast and efficient achievement of spatial properties of broadband THz beams.

Frequency-resolved characterization of broadband two-color air-plasma terahertz beam profiles

The frequency-resolved terahertz (THz) beam profile characteristics of a two-color air-plasma THz source were investigated in the broadband frequency range (1-15 THz). The frequency resolution is achieved by combining THz waveform measurements and the knife-edge technique. Our results show that the THz focal spot size is strongly frequency dependent. This has important implications on nonlinear THz spectroscopy applications where accurate knowledge of the applied THz electrical field strength onto the sample is important. In addition, the transition between the solid and hollow beam profile of the air-plasma THz beam was carefully identified. Far from the focus, the features across the 1-15 THz range have also been carefully examined, revealing the characteristic conical emission patterns at all frequencies.

Ultrafast, broadband and tunable terahertz reflector and neutral density filter based on high resistivity silicon

We report THz transmission and reflection properties of an ultrafast optically excited highly resistive silicon wafer. Amplified Ti:Sapphire femtosecond laser pulses at 800 nm were used to create fluence-dependent carrier density on the front surface of the wafer which modifies the dielectric properties at the THz frequencies. Time-resolved experiments in the optical pump-THz probe configuration were conducted in which THz pulses reflected off from the surface at 0° and 45° angles of incidence make it possible to measure the pump-fluence dependent ultrafast evolution of the reflection and transmission coefficients in 0.5-6 THz range. An analytical model, where both the Drude contributions from the photo-excited electrons and holes account for the change of the dielectric constant of the photo-excited silicon, has been used to evaluate the THz reflection and transmission coefficients at steady state. Thus obtained results match well with the experimental results and demonstrate an all-optical means to convert a silicon wafer into an ultrafast, tunable and broadband neutral density filter or reflector in the THz frequency range.