Dielectric Response Spectroscopy as Means to Investigate Interfacial Effects for Ultra-Thin Film Polymer-Based High NA EUV Lithography

Coarse-Grained Modeling of EUV Patterning Process Reflecting Photochemical Reactions and Chain Conformations

Enabling extreme ultraviolet lithography (EUVL) as a viable and efficient sub-10 nm patterning tool requires addressing the critical issue of reducing line edge roughness (LER). Stochastic effects from random and local variability in photon distribution and photochemical reactions have been considered the primary cause of LER. However, polymer chain conformation has recently attracted attention as an additional factor influencing LER, necessitating detailed computational studies with explicit chain representation and photon distribution to overcome the existing approach based on continuum models and random variables. We developed a coarse-grained molecular simulation model for an EUV patterning process to investigate the effect of chain conformation variation and stochastic effects via photon shot noise and acid diffusion on the roughness of the pattern. Our molecular simulation demonstrated that final LER is most sensitive to the variation in photon distributions, while material distributions and acid diffusion rate also impact LER; thus, the intrinsic limit of LER is expected even at extremely suppressed stochastic effects. Furthermore, we proposed and tested a novel approach to improve the roughness by controlling the initial polymer chain orientation.

Activation free energy gradient controls interfacial mobility gradient in thin polymer films

We examine the mobility gradient in the interfacial region of substrate-supported polymer films using molecular dynamics simulations and interpret these gradients within the string model of glass-formation. No large gradients in the extent of collective motion exist in these simulated films, and an analysis of the mobility gradient on a layer-by-layer basis indicates that the string model provides a quantitative description of the relaxation time gradient. Consequently, the string model indicates that the interfacial mobility gradient derives mainly from a gradient in the high-temperature activation enthalpy ΔH₀ and entropy ΔS₀ as a function of depth z, an effect that exists even in the high-temperature Arrhenius relaxation regime far above the glass transition temperature. To gain insight into the interfacial mobility gradient, we examined various material properties suggested previously to influence ΔH₀ in condensed materials, including density, potential and cohesive energy density, and a local measure of stiffness or u²(z)^-3/2, where u²(z) is the average mean squared particle displacement at a caging time (on the order of a ps). We find that changes in local stiffness best correlate with changes in ΔH₀(z) and that ΔS₀(z) also contributes significantly to the interfacial mobility gradient, so it must not be neglected.