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Bai Y, He J, Ran R, Zhou W, Wang W, Shao Z. Complex Metal Oxides as Emerging Inorganic Hole-Transporting Materials for Perovskite Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2310227. [PMID: 38196154 DOI: 10.1002/smll.202310227] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2023] [Revised: 12/25/2023] [Indexed: 01/11/2024]
Abstract
Perovskite solar cells (PSCs) have achieved revolutionary progress during the past decades with a rapidly boosting rate in power conversion efficiencies from 3.8% to 26.1%. However, high-efficiency PSCs with organic hole-transporting materials (HTMs) suffer from inferior long-term stability and high costs. The replacement of organic HTMs with inorganic counterparts such as metal oxides can solve the above-mentioned problems to realize highly robust and cost-effective PSCs. Nevertheless, the widely used simple metal oxide-based HTMs are limited by the low conductivity and poor light transmittance due to the fixed atomic environment. As an emerging family of inorganic HTMs, complex metal oxides with superior structural/compositional flexibility have attracted rapidly increasing interest recently, showing superior carrier conductivity/mobility and superb light transmittance. Herein, the recent advancements in the design and development of complex metal oxide-based HTMs for high-performance PSCs are summarized by emphasizing the superiority of complex metal oxides as HTMs over simple metal oxide-based counterparts. Consequently, several distinct strategies for the design of complex metal oxide-based HTMs are proposed. Last, the future directions and remaining challenges of inorganic complex metal oxide-based HTMs for PSCs are also presented. This review aims to provide valuable guidelines for the further advancements of robust, high-efficiency, and low-cost PSCs.
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Affiliation(s)
- Yu Bai
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing, 210009, China
| | - Jingsheng He
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing, 210009, China
| | - Ran Ran
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing, 210009, China
| | - Wei Zhou
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing, 210009, China
| | - Wei Wang
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing, 210009, China
| | - Zongping Shao
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing, 210009, China
- WA School of Mines: Minerals, Energy and Chemical Engineering, Curtin University, Perth, Western Australia, 6845, Australia
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Uceta H, Cabrera-Espinoza A, Barrejón M, Sánchez JG, Gutierrez-Fernandez E, Kosta I, Martín J, Collavini S, Martínez-Ferrero E, Langa F, Delgado JL. p-Type Functionalized Carbon Nanohorns and Nanotubes in Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2023; 15:45212-45228. [PMID: 37672775 PMCID: PMC10540139 DOI: 10.1021/acsami.3c07476] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2023] [Accepted: 08/28/2023] [Indexed: 09/08/2023]
Abstract
The incorporation of p-type functionalized carbon nanohorns (CNHs) in perovskite solar cells (PSCs) and their comparison with p-type functionalized single- and double-walled carbon nanotubes (SWCNTs and DWCNTs) are reported in this study for the first time. These p-type functionalized carbon nanomaterial (CNM) derivatives were successfully synthesized by [2 + 1] cycloaddition reaction with nitrenes formed from triphenylamine (TPA) and 9-phenyl carbazole (Cz)-based azides, yielding CNHs-TPA, CNHs-Cz, SWCNTs-Cz, SWCNTs-TPA, DWCNTs-TPA, and DWCNTs-Cz. These six novel CNMs were incorporated into the spiro-OMeTAD-based hole transport layer (HTL) to evaluate their impact on regular mesoporous PSCs. The photovoltaic results indicate that all p-type functionalized CNMs significantly improve the power conversion efficiency (PCE), mainly by enhancing the short-circuit current density (Jsc) and fill factor (FF). TPA-functionalized derivatives increased the PCE by 12-17% compared to the control device without CNMs, while Cz-functionalized derivatives resulted in a PCE increase of 4-8%. Devices prepared with p-type functionalized CNHs exhibited a slightly better PCE compared with those based on SWCNTs and DWCNTs derivatives. The increase in hole mobility of spiro-OMeTAD, additional p-type doping, better energy alignment with the perovskite layer, and enhanced morphology and contact interface play important roles in enhancing the performance of the device. Furthermore, the incorporation of p-type functionalized CNMs into the spiro-OMeTAD layer increased device stability by improving the hydrophobicity of the layer and enhancing the hole transport across the MAPI/spiro-OMeTAD interface. After 28 days under ambient conditions and darkness, TPA-functionalized CNMs maintained the performance of the device by over 90%, while Cz-functionalized CNMs preserved it between 75 and 85%.
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Affiliation(s)
- Helena Uceta
- Instituto
de Nanociencia, Nanotecnología y Materiales Moleculares (INAMOL), Universidad de Castilla-La Mancha, Avenida Carlos III S/N, Toledo 45071, Spain
| | - Andrea Cabrera-Espinoza
- POLYMAT, University
of the Basque Country UPV/EHU, Avenida Tolosa 72, Donostia/San
Sebastián 20018, Spain
| | - Myriam Barrejón
- Instituto
de Nanociencia, Nanotecnología y Materiales Moleculares (INAMOL), Universidad de Castilla-La Mancha, Avenida Carlos III S/N, Toledo 45071, Spain
| | - José G. Sánchez
- Institute
of Chemical Research of Catalonia-The Barcelona Institute of Science
and Technology (ICIQ-BIST), Avinguda Països Catalans 16, Tarragona 43007, Spain
| | - Edgar Gutierrez-Fernandez
- POLYMAT, University
of the Basque Country UPV/EHU, Avenida Tolosa 72, Donostia/San
Sebastián 20018, Spain
| | - Ivet Kosta
- CIDETEC,
Basque Research and Technology Alliance (BRTA), Paseo Miramón 196, Donostia/San Sebastián 20014, Spain
| | - Jaime Martín
- POLYMAT, University
of the Basque Country UPV/EHU, Avenida Tolosa 72, Donostia/San
Sebastián 20018, Spain
| | - Silvia Collavini
- POLYMAT, University
of the Basque Country UPV/EHU, Avenida Tolosa 72, Donostia/San
Sebastián 20018, Spain
| | - Eugenia Martínez-Ferrero
- Institute
of Chemical Research of Catalonia-The Barcelona Institute of Science
and Technology (ICIQ-BIST), Avinguda Països Catalans 16, Tarragona 43007, Spain
| | - Fernando Langa
- Instituto
de Nanociencia, Nanotecnología y Materiales Moleculares (INAMOL), Universidad de Castilla-La Mancha, Avenida Carlos III S/N, Toledo 45071, Spain
| | - Juan Luis Delgado
- POLYMAT, University
of the Basque Country UPV/EHU, Avenida Tolosa 72, Donostia/San
Sebastián 20018, Spain
- Ikerbasque,
Basque Foundation for Science, Bilbao 48013, Spain
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Guo Y, Huang L, Wang C, Liu S, Huang J, Liu X, Zhang J, Hu Z, Zhu Y. Advances on the Application of Wide Band-Gap Insulating Materials in Perovskite Solar Cells. SMALL METHODS 2023; 7:e2300377. [PMID: 37254269 DOI: 10.1002/smtd.202300377] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/23/2023] [Revised: 05/07/2023] [Indexed: 06/01/2023]
Abstract
In recent years, the development of perovskite solar cells (PSCs) is advancing rapidly with their recorded photoelectric conversion efficiency reaching 25.8%. However, for the commercialization of PSCs, it is also necessary to solve their stability issue. In order to improve the device performance, various additives and interface modification strategies have been proposed. While, in many cases, they can guarantee a significant increase in efficiency, but not ensure improved stability. Therefore, materials that improve the device efficiency and stability simultaneously are urgently needed. Some wide band-gap insulating materials with stable physical and chemical properties are promising alternative materials. In this review, the application of wide band-gap insulating materials in PSCs, including their preparation methods, working roles, and mechanisms are described, which will promote the commercial application of PSCs.
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Affiliation(s)
- Yi Guo
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo, 315211, China
| | - Like Huang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo, 315211, China
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China
| | - Chaofeng Wang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo, 315211, China
| | - Shuang Liu
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo, 315211, China
| | - Jiajia Huang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo, 315211, China
| | - Xiaohui Liu
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo, 315211, China
| | - Jing Zhang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo, 315211, China
| | - Ziyang Hu
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo, 315211, China
| | - Yuejin Zhu
- School of Information Engineering, College of Science and Technology, Ningbo University, Ningbo, 315300, China
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Kebede T, Abebe M, Mani D, Paduvilan JK, Thottathi L, Thankappan A, Thomas S, Kamangar S, Shaik AS, Badruddin IA, Aga FG, Kim JY. Phase Behavior and Role of Organic Additives for Self-Doped CsPbI 3 Perovskite Semiconductor Thin Films. MICROMACHINES 2023; 14:1601. [PMID: 37630137 PMCID: PMC10456489 DOI: 10.3390/mi14081601] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/18/2023] [Revised: 08/09/2023] [Accepted: 08/09/2023] [Indexed: 08/27/2023]
Abstract
The phase change of all-inorganic cesium lead halide (CsPbI3) thin film from yellow δ-phase to black γ-/α-phase has been a topic of interest in the perovskite optoelectronics field. Here, the main focus is how to secure a black perovskite phase by avoiding a yellow one. In this work, we fabricated a self-doped CsPbI3 thin film by incorporating an excess cesium iodide (CsI) into the perovskite precursor solution. Then, we studied the effect of organic additive such as 1,8-diiodooctane (DIO), 1-chloronaphthalene (CN), and 1,8-octanedithiol (ODT) on the optical, structural, and morphological properties. Specifically, for elucidating the binary additive-solvent solution thermodynamics, we employed the Flory-Huggins theory based on the oligomer level of additives' molar mass. Resultantly, we found that the miscibility of additive-solvent displaying an upper critical solution temperature (UCST) behavior is in the sequence CN:DMF > ODT:DMF > DIO:DMF, the trends of which could be similarly applied to DMSO. Finally, the self-doping strategy with additive engineering should help fabricate a black γ-phase perovskite although the mixed phases of δ-CsPbI3, γ-CsPbI3, and Cs4PbI6 were observed under ambient conditions. However, the results may provide insight for the stability of metastable γ-phase CsPbI3 at room temperature.
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Affiliation(s)
- Tamiru Kebede
- Faculty of Materials Science and Engineering, Jimma Institute of Technology, Jimma University, Jimma P.O. Box 378, Ethiopia; (T.K.); (M.A.); (D.M.)
- Department of Physics, College of Natural and Computational Science, Bonga University, Bonga P.O. Box 334, Ethiopia
| | - Mulualem Abebe
- Faculty of Materials Science and Engineering, Jimma Institute of Technology, Jimma University, Jimma P.O. Box 378, Ethiopia; (T.K.); (M.A.); (D.M.)
| | - Dhakshnamoorthy Mani
- Faculty of Materials Science and Engineering, Jimma Institute of Technology, Jimma University, Jimma P.O. Box 378, Ethiopia; (T.K.); (M.A.); (D.M.)
| | | | - Lishin Thottathi
- Department of Physics and Mathematics, Università Cattolica del Sacro Cuore, Via della Garzetta, 48, 25133 Brescia, BS, Italy;
| | | | - Sabu Thomas
- School of Energy Materials, Mahatma Gandhi University, Kottayam 686560, India;
| | - Sarfaraz Kamangar
- Mechanical Engineering Department, College of Engineering, King Khalid University, Abha 61421, Saudi Arabia; (S.K.); (A.S.S.); (I.A.B.)
| | - Abdul Saddique Shaik
- Mechanical Engineering Department, College of Engineering, King Khalid University, Abha 61421, Saudi Arabia; (S.K.); (A.S.S.); (I.A.B.)
| | - Irfan Anjum Badruddin
- Mechanical Engineering Department, College of Engineering, King Khalid University, Abha 61421, Saudi Arabia; (S.K.); (A.S.S.); (I.A.B.)
| | - Fekadu Gochole Aga
- Department of Materials Science and Engineering, Adama Science and Technology University, Adama P.O. Box 1888, Ethiopia;
- Center of Advanced Materials Science and Engineering, Adama Science and Technology University, Adama P.O. Box 1888, Ethiopia
| | - Jung Yong Kim
- Department of Materials Science and Engineering, Adama Science and Technology University, Adama P.O. Box 1888, Ethiopia;
- Center of Advanced Materials Science and Engineering, Adama Science and Technology University, Adama P.O. Box 1888, Ethiopia
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