Dynamic Modeling for the Design and Cyclic Operation of an Atomic Layer Deposition (ALD) Reactor

New development of atomic layer deposition: processes, methods and applications

Atomic layer deposition (ALD) is an ultra-thin film deposition technique that has found many applications owing to its distinct abilities. They include uniform deposition of conformal films with controllable thickness, even on complex three-dimensional surfaces, and can improve the efficiency of electronic devices. This technology has attracted significant interest both for fundamental understanding how the new functional materials can be synthesized by ALD and for numerous practical applications, particularly in advanced nanopatterning for microelectronics, energy storage systems, desalinations, catalysis and medical fields. This review introduces the progress made in ALD, both for computational and experimental methodologies, and provides an outlook of this emerging technology in comparison with other film deposition methods. It discusses experimental approaches and factors that affect the deposition and presents simulation methods, such as molecular dynamics and computational fluid dynamics, which help determine and predict effective ways to optimize ALD processes, hence enabling the reduction in cost, energy waste and adverse environmental impacts. Specific examples are chosen to illustrate the progress in ALD processes and applications that showed a considerable impact on other technologies.

Three-dimensional electroactive ZnO nanomesh directly derived from hierarchically self-assembled block copolymer thin films

Three-dimensional (3D) nanoarchitectures can offer enhanced material properties, such as large surface areas that amplify the structures' interaction with environments making them useful for various sensing applications. Self-assembled block copolymers (BCPs) can readily generate various 3D nanomorphologies, but their conversion to useful inorganic materials remains one of the critical challenges against the practical application of self-assembled BCPs. This work reports the vapor-phase infiltration synthesis of optoelectrically active, 3D ZnO nanomesh architectures by combining hierarchical successive stacking of self-assembled, lamellar-phase polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) BCP thin films and a modified block-selective vapor-phase material infiltration protocol. The 3D ZnO nanomesh exhibits optoelectrical functionality, featuring stack-layer-number-dependent electrical conductance resembling the percolative transport originating from the intrinsic morphological network connectivity of the lamellar BCP pattern with symmetric block ratio. The results not only illustrate the first demonstration of electrical functionality based on the ZnO nanoarchitecture directly generated by the infiltration synthesis in self-assembled BCP thin films but also present a new, large-area scalable, metal oxide thin film nanoarchitecture fabrication method utilizing industry-compatible polymer solution coating and atomic layer deposition. Given the large surface area, three-dimensional porosity, and readily scalable fabrication procedures, the generated ZnO nanomesh promises potential applications as an efficient active medium in chemical and optical sensors.

Atomic and molecular layer deposition: off the beaten track

ALD archetype and deviations from it.

Gas-Phase Deposition of Ultrathin Aluminium Oxide Films on Nanoparticles at Ambient Conditions

We have deposited aluminium oxide films by atomic layer deposition on titanium oxide nanoparticles in a fluidized bed reactor at 27 ± 3 °C and atmospheric pressure. Working at room temperature allows the coating of heat-sensitive materials, while working at atmospheric pressure would simplify the scale-up of this process. We performed 4, 7 and 15 cycles by dosing a predefined amount of precursors, i.e., trimethyl aluminium and water. We obtained a growth per cycle of 0.14–0.15 nm determined by transmission electron microscopy (TEM), similar to atomic layer deposition (ALD) experiments at a few millibars and ~180 °C. We also increased the amount of precursors dosed by a factor of 2, 4 and 6 compared to the base case, maintaining the same purging time. The growth per cycle (GPC) increased, although not linearly, with the dosing time. In addition, we performed an experiment at 170 °C and 1 bar using the dosing times increased by factor 6, and obtained a growth per cycle of 0.16 nm. These results were verified with elemental analysis, which showed a good agreement with the results from TEM pictures. Thermal gravimetric analysis (TGA) showed a negligible amount of unreacted molecules inside the alumina films. Overall, the dosage of the precursors is crucial to control precisely the growth of the alumina films at atmospheric pressure and room temperature. Dosing excess precursor induces a chemical vapour deposition type of growth due to the physisorption of molecules on the particles, but this can be avoided by working at high temperatures.