Adsorption of NO Gas Molecules on Monolayer Arsenene Doped with Al, B, S and Si: A First-Principles Study

Electronic and adsorption properties of halogen molecule X2 (X=F, Cl) adsorbed arsenene: First-principles study

The geometry, electronic structure, and adsorption properties of halogen molecule X2(X = F, Cl) on arsenene were investigated using first-principles calculations. The adsorption of molecules was considered at various sites and in various orientations on the pristine arsenene (p-As) surface. Both molecules show chemisorption and the crystal orbital Hamiltonian population (COHP) analysis reveals the formation of strong X-As bonds. In particular, the adsorbed molecules spontaneously dissociate into atomic halogen atoms, with a diffusion barrier of 1.91 (1.72) eV for F2(Cl2). The adsorbed X2 molecules induced distortions in the local geometry due to strong interaction with arsenene. Importantly, the formation of X-As bonding remarkably changed the electronic properties, evidenced by the decrease of the actual band gap due to the emergence of defect states within the band gap. For instance, the F2 adsorbed arsenene system (F2-As) exhibited an average band gap of 1.17 eV, and Cl2 adsorbed arsenene (Cl2-As) showed an average band gap of 0.83 eV. In particular, indirect to direct band gap transition was observed for some adsorption configurations. The reduction in band gap resulted in the enhancement of electrical conductivity. These findings suggest that the electronic properties of arsenene can be tuned by halogen decoration.

Effect of Si, Be, Al, N and S dual doping on arsenene: first-principles insights

First-principles calculations based on density functional theory (DFT) have been performed to investigate the effect of Si/Be, Si/Al, Si/N and Si/S co-doping on the geometries, electronic structure, magnetism and particularly the adsorption of CO in arsenene. The results show that the incorporation of foreign atoms slightly distorts the host lattice. All doped structures are found to be thermodynamically stable. The replacement of host As atoms with foreign atoms results in some interesting changes in the electronic and magnetic properties of arsenene. The doped arsenene systems exhibit a semiconducting character with band gaps smaller than the original value of 1.59 eV due to the emergence of defect states within the actual band gap. Besides, arsenene remains nonmagnetic (NM) upon Si/Be or Si/S dual doping, whereas both Si/Al and Si/N dopings induce magnetism with a total magnetic moment of 1 μB. Finally, the adsorption of CO molecules over pristine arsenene (p-As) and dual doped arsenene systems is investigated in terms of adsorption energy, adsorption height, charge transfer, charge density difference (CDD), work function, electronic band structures and density of states. It is observed that CO molecule has physisorption over p-As, SiAl-As, SiN-As and SiS-As systems, whereas chemisorption is reported for the SiBe-As system. Our study suggests that chemically modifying arsenene with suitable dopants might extend its applications in spintronic and gas sensing applications.

Gas Capture Processes

The increasing trends in gas emissions have had direct adverse impacts on human health and ecological habitats in the world. A variety of technologies have been deployed to mitigate the release of such gases, including CO2, CO, SO2, H2S, NOx and H2. This special issue on gas-capture processes collects 25 review and research papers on the applications of novel techniques, processes, and theories in gas capture and removal.