Single-Photon Avalanche Diode with Enhanced NIR-Sensitivity for Automotive LIDAR Systems

Chiral Diketopyrrolopyrrole-Based Conjugated Polymers with Intramolecular Rotation-Isomeric Conformation Asymmetry for Near-Infrared Circularly Polarized Light-Sensing Organic Phototransistors

Recent advances in chiral nanomaterials interacting with circularly polarized (CP) light open new expectations for optoelectronics in various research fields such as quantum- and biology-related technology. To fully utilize the great potential of chiral optoelectronic devices, the development of chiral optoelectronic devices that function in the near-infrared (NIR) region is required. Herein, we demonstrate a NIR-absorbing, chiroptical, low-band-gap polymer semiconductor for high-performance NIR CP light phototransistors. A newly synthesized diketopyrrolopyrrole-based donor-acceptor-type chiral π-conjugated polymer with an asymmetric alkyl side chain exhibits strong chiroptical activity in a wavelength range of 700-1000 nm. We found that the attachment of an enantiomerically pure stereogenic alkyl substituent to the π-conjugated chromophore backbone led to strong chiroptical activity through symmetry breaking of the π-conjugation of the backbone in a molecular rotational motion while maintaining the coplanar backbone conformation for efficient charge transport. The NIR CP light-sensing phototransistors based on a chiral π-conjugated polymer photoactive single channel layer exhibit a high photoresponsivity of 26 A W-1 under NIR CP light irradiation at 920 nm, leading to excellent NIR CP light distinguishability. This study will provide a rationale and strategy for designing chiral π-conjugated polymers for high-performance NIR chiral optoelectronics.

Effect of the bonding layer and multigrading layers on the performance of a wafer-bonded InGaAs/Si single-photon detector

A wafer-bonded InGaAs/Si avalanche photodiode (APD) at a wavelength of 1550 nm was theoretically simulated. We focused on the effect of the I n _1-x G a _x A s multigrading layers and bonding layers on the electric fields, electron and hole concentrations, recombination rates, and energy bands. In this work, I n _1-x G a _x A s multigrading layers inserted between Si and InGaAs were adopted to reduce the discontinuity of the conduction band between Si and InGaAs. A bonding layer was introduced at the InGaAs/Si interface to isolate the mismatched lattices to achieve a high-quality InGaAs film. In addition, the bonding layer can further regulate the electric field distribution in the absorption and multiplication layers. The wafer-bonded InGaAs/Si APD, structured by a polycrystalline silicon (poly-Si) bonding layer and I n _1-x G a _x A s multigrading layers (x changes from 0.5 to 0.85), displayed the highest gain-bandwidth product (GBP). When the APD operates in Geiger mode, the single-photon detection efficiency (SPDE) of the photodiode is 20%, and the dark count rate (DCR) is 1 MHz at 300 K. Moreover, one finds that the DCR is lower than 1 kHz at 200 K. These results indicate that high-performance InGaAs/Si SPAD can be achieved through a wafer-bonded platform.

Low-cost scanning LIDAR architecture with a scalable frame rate for autonomous vehicles

Autonomous vehicles need accurate 3D perception with a decent frame rate and high angular resolution to detect obstacles reliably and avoid collisions. We developed a low-cost scanning multichannel light detection and ranging sensor architecture allowing scalable frame rates by adjusting the number of laser and detector pairs. Scanning is achieved by a pair of micro-electro-mechanical system (MEMS) mirrors. A control pattern for the MEMS mirrors to maximize the frame rate is presented. A built prototype based on the proposed architecture achieves a frame rate of 11.5 Hz, a field of view of 70^∘×30^∘, and an angular resolution of 0.4°. The distance resolution is 6 cm. Reliable single-shot detection for low-reflective objects up to 19 m indoors and 11 m under direct sunlight exposure is achieved. A performance assessment based on the presented measurement system for recently available vertical-cavity surface-emitting laser arrays with power densities up to 1k W/m m ² shows promising improvement potential.

Feasibility of Hyperspectral Single Photon Lidar for Robust Autonomous Vehicle Perception

Autonomous vehicle perception systems typically rely on single-wavelength lidar sensors to obtain three-dimensional information about the road environment. In contrast to cameras, lidars are unaffected by challenging illumination conditions, such as low light during night-time and various bidirectional effects changing the return reflectance. However, as many commercial lidars operate on a monochromatic basis, the ability to distinguish objects based on material spectral properties is limited. In this work, we describe the prototype hardware for a hyperspectral single photon lidar and demonstrate the feasibility of its use in an autonomous-driving-related object classification task. We also introduce a simple statistical model for estimating the reflectance measurement accuracy of single photon sensitive lidar devices. The single photon receiver frame was used to receive 30 12.3 nm spectral channels in the spectral band 1200-1570 nm, with a maximum channel-wise intensity of 32 photons. A varying number of frames were used to accumulate the signal photon count. Multiple objects covering 10 different categories of road environment, such as car, dry asphalt, gravel road, snowy asphalt, wet asphalt, wall, granite, grass, moss, and spruce tree, were included in the experiments. We test the influence of the number of spectral channels and the number of frames on the classification accuracy with random forest classifier and find that the spectral information increases the classification accuracy in the high-photon flux regime from 50% to 94% with 2 channels and 30 channels, respectively. In the low-photon flux regime, the classification accuracy increases from 30% to 38% with 2 channels and 6 channels, respectively. Additionally, we visualize the data with the t-SNE algorithm and show that the photon shot noise in the single photon sensitive hyperspectral data contributes the most to the separability of material specific spectral signatures. The results of this study provide support for the use of hyperspectral single photon lidar data on more advanced object detection and classification methods, and motivates the development of advanced single photon sensitive hyperspectral lidar devices for use in autonomous vehicles and in robotics.

Ge-on-Si single-photon avalanche diode detectors for short-wave infrared wavelengths

Germanium-on-silicon (Ge-on-Si) based single-photon avalanche diodes (SPADs) have recently emerged as a promising detector candidate for ultra-sensitive and picosecond resolution timing measurement of short-wave infrared (SWIR) photons. Many applications benefit from operating in the SWIR spectral range, such as long distance light detection and ranging, however, there are few single-photon detectors exhibiting the high-performance levels obtained by all-silicon SPADs commonly used for single-photon detection at wavelengths <1 µm. This paper first details the advantages of operating at SWIR wavelengths, the current technologies, and associated issues, and describes the potential of Ge-on-Si SPADs as a single-photon detector technology for this wavelength region. The working principles, fabrication and characterisation processes of such devices are subsequently detailed. We review the research in these single-photon detectors and detail the state-of-the-art performance. Finally, the challenges and future opportunities offered by Ge-on-Si SPAD detectors are discussed.

A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage

Silicon avalanche photodetector (APD) plays a very important role in near-infrared light detection due to its linear controllable gain and attractive manufacturing cost. In this paper, a silicon APD with punch-through structure is designed and fabricated by standard 0.5 μm complementary metal oxide semiconductor (CMOS) technology. The proposed structure eliminates the requirements for wafer-thinning and the double-side metallization process by most commercial Si APD products. The fabricated device shows very low level dark current of several tens Picoamperes and ultra-high multiplication gain of ~4600 at near-infrared wavelength. The ultra-low extracted temperature coefficient of the breakdown voltage is 0.077 V/K. The high performance provides a promising solution for near-infrared weak light detection.

Design and Characterization of an Asynchronous Fixed Priority Tree Arbiter for SPAD Array Readout

The usage of single-photon avalanche diode arrays is becoming increasingly common in various domains such as medical imaging, automotive vision systems, and optical communications. Nowadays, thanks to the development of microelectronics technologies, the SPAD arrays designed for these applications has been drastically well-facilitated, allowing for the manufacturing of large matrices. However, there are growing challenges for the design of readout circuits with the needs of reducing their energy consumption (linked to the usage cost) and data rate. Indeed, the design of the readout circuit for the SPAD array is generally based on synchronous logic; the latter requires synchronization that may increase the dead time of the SPADs and clock trees management that are known to increase power consumption. With these limitations, the long-neglected asynchronous (clockless) logic proved to be a better alternative because of its ability to operate without a clock. In this paper, we presented the design of a 16-to-1 fixed-priority tree arbiter readout circuit for a SPAD array based on asynchronous logic principles. The design of this circuit was explained in detail and supported by simulation results. The manufactured chip was tested, and the experimental results showed that it is possible to record up to 333 million events per second; no reading errors were detected during the data extraction test.

SPADs and SiPMs Arrays for Long-Range High-Speed Light Detection and Ranging (LiDAR)

Light Detection and Ranging (LiDAR) is a 3D imaging technique, widely used in many applications such as augmented reality, automotive, machine vision, spacecraft navigation and landing. Achieving long-ranges and high-speed, most of all in outdoor applications with strong solar background illumination, are challenging requirements. In the introduction we review different 3D-ranging techniques (stereo-vision, projection with structured light, pulsed-LiDAR, amplitude-modulated continuous-wave LiDAR, frequency-modulated continuous-wave interferometry), illumination schemes (single point and blade scanning, flash-LiDAR) and time-resolved detectors for LiDAR (EM-CCD, I-CCD, APD, SPAD, SiPM). Then, we provide an extensive review of silicon- single photon avalanche diode (SPAD)-based LiDAR detectors (both commercial products and research prototypes) analyzing how each architecture faces the main challenges of LiDAR (i.e., long ranges, centimeter resolution, large field-of-view and high angular resolution, high operation speed, background immunity, eye-safety and multi-camera operation). Recent progresses in 3D stacking technologies provided an important step forward in SPAD array development, allowing to reach smaller pitch, higher pixel count and more complex processing electronics. In the conclusions, we provide some guidelines for the design of next generation SPAD-LiDAR detectors.

A Scaling Law for SPAD Pixel Miniaturization

The growing demands on compact and high-definition single-photon avalanche diode (SPAD) arrays have motivated researchers to explore pixel miniaturization techniques to achieve sub-10 μm pixels. The scaling of the SPAD pixel size has an impact on key performance metrics, and it is, thereby, critical to conduct a systematic analysis of the underlying tradeoffs in miniaturized SPADs. On the basis of the general assumptions and constraints for layout geometry, we performed an analytical formulation of the scaling laws for the key metrics, such as the fill factor (FF), photon detection probability (PDP), dark count rate (DCR), correlated noise, and power consumption. Numerical calculations for various parameter sets indicated that some of the metrics, such as the DCR and power consumption, were improved by pixel miniaturization, whereas other metrics, such as the FF and PDP, were degraded. Comparison of the theoretically estimated scaling trends with previously published experimental results suggests that the scaling law analysis is in good agreement with practical SPAD devices. Our scaling law analysis could provide a useful tool to conduct a detailed performance comparison between various process, device, and layout configurations, which is essential for pushing the limit of SPAD pixel miniaturization toward sub-2 μm-pitch SPADs.

Analytical Evaluation of Signal-to-Noise Ratios for Avalanche- and Single-Photon Avalanche Diodes

Performance of systems for optical detection depends on the choice of the right detector for the right application. Designers of optical systems for ranging applications can choose from a variety of highly sensitive photodetectors, of which the two most prominent ones are linear mode avalanche photodiodes (LM-APDs or APDs) and Geiger-mode APDs or single-photon avalanche diodes (SPADs). Both achieve high responsivity and fast optical response, while maintaining low noise characteristics, which is crucial in low-light applications such as fluorescence lifetime measurements or high intensity measurements, for example, Light Detection and Ranging (LiDAR), in outdoor scenarios. The signal-to-noise ratio (SNR) of detectors is used as an analytical, scenario-dependent tool to simplify detector choice for optical system designers depending on technologically achievable photodiode parameters. In this article, analytical methods are used to obtain a universal SNR comparison of APDs and SPADs for the first time. Different signal and ambient light power levels are evaluated. The low noise characteristic of a typical SPAD leads to high SNR in scenarios with overall low signal power, but high background illumination can saturate the detector. LM-APDs achieve higher SNR in systems with higher signal and noise power but compromise signals with low power because of the noise characteristic of the diode and its readout electronics. Besides pure differentiation of signal levels without time information, ranging performance in LiDAR with time-dependent signals is discussed for a reference distance of 100 m. This evaluation should support LiDAR system designers in choosing a matching photodiode and allows for further discussion regarding future technological development and multi pixel detector designs in a common framework.

Modulated High Power and Narrow Pulse Width Laser Drive Circuit for Lidar System

This manuscript introduces a laser drive circuit for a light detection and ranging (Lidar) system. A Lidar system usually requires its drive circuit to provide laser pulses with nanosecond pulse width, >100 W peak power and high repetition frequency. However, the existing research results show difficulties in meeting these requirements. In order to reduce the pulse width and increase the peak power of laser pulses, special circuit design and component selection are used to optimize the parasitic parameters of the drive circuit, and GaN devices are used to increase the switching speed. The characteristics of laser pulses are tested under different input voltage, pulse per second and switch conducting time. Meanwhile, the reasons for the changes in these characteristics are analyzed and explained. In order to meet the requirements of the Lidar system to detect targets at different distances, a modulation method to change the peak power of the laser pulse is proposed. In our experiment, ideally, the peak power of the laser pulse reaches 135 W, and the pulse width is less than 2 ns at a pulse per second rate of 400 kHz.

Towards combined quantum bit detection and spatial tracking using an arrayed single-photon sensor

Experimental quantum key distribution through free-space channels requires accurate pointing-and-tracking to co-align telescopes for efficient transmission. The hardware requirements for the sender and receiver could be drastically reduced by combining the detection of quantum bits and spatial tracking signal using two-dimensional single-photon detector arrays. Here, we apply a two-dimensional CMOS single-photon avalanche diode detector array to measure and monitor the single-photon level interference of a free-space time-bin receiver interferometer while simultaneously tracking the spatial position of the single-photon level signal. We verify an angular field-of-view of 1.28° and demonstrate a post-processing technique to reduce background noise. The experimental results show a promising future for two-dimensional single-photon detectors in low-light level free-space communications, such as quantum communications.

Custom silicon technology for SPAD-arrays with red-enhanced sensitivity and low timing jitter

Single-photon detection is an invaluable tool for many applications ranging from basic research to consumer electronics. In this respect, the Single Photon Avalanche Diode (SPAD) plays a key role in enabling a broad diffusion of these techniques thanks to its remarkable performance, room-temperature operation, and scalability. In this paper we present a silicon technology that allows the fabrication of SPAD-arrays with an unprecedented combination of low timing jitter (95 ps FWHM) and high detection efficiency at red and near infrared wavelengths (peak of 70% at 650 nm, 45% at 800 nm). We discuss the device structure, the fabrication process, and we present a thorough experimental characterization of the fabricated detectors. We think that these results can pave the way to new exciting developments in many fields, ranging from quantum optics to single molecule spectroscopy.

Development of Reliable, High Performance WLCSP for BSI CMOS Image Sensor for Automotive Application

To meet the urgent market demand for small package size and high reliability performance for automotive CMOS image sensor (CIS) application, wafer level chip scale packaging (WLCSP) technology using through silicon vias (TSV) needs to be developed to replace current chip on board (COB) packages. In this paper, a WLCSP with the size of 5.82 mm × 5.22 mm and thickness of 850 μm was developed for the backside illumination (BSI) CIS chip using a 65 nm node with a size of 5.8 mm × 5.2 mm. The packaged product has 1392 × 976 pixels and a resolution of up to 60 frames per second with more than 120 dB dynamic range. The structure of the 3D package was designed and the key fabrication processes on a 12” inch wafer were investigated. More than 98% yield and excellent optical performance of the CIS package was achieved after process optimization. The final packages were qualified by AEC-Q100 Grade 2.

Modeling and Analysis of Capacitive Relaxation Quenching in a Single Photon Avalanche Diode (SPAD) Applied to a CMOS Image Sensor

We present an analysis of carrier dynamics of the single-photon detection process, i.e., from Geiger mode pulse generation to its quenching, in a single-photon avalanche diode (SPAD). The device is modeled by a parallel circuit of a SPAD and a capacitance representing both space charge accumulation inside the SPAD and parasitic components. The carrier dynamics inside the SPAD is described by time-dependent bipolar-coupled continuity equations (BCE). Numerical solutions of BCE show that the entire process completes within a few hundreds of picoseconds. More importantly, we find that the total amount of charges stored on the series capacitance gives rise to a voltage swing of the internal bias of SPAD twice of the excess bias voltage with respect to the breakdown voltage. This, in turn, gives a design methodology to control precisely generated charges and enables one to use SPADs as conventional photodiodes (PDs) in a four transistor pixel of a complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) with short exposure time and without carrier overflow. Such operation is demonstrated by experiments with a 6 µm size 400 × 400 pixels SPAD-based CIS designed with this methodology.

A Time-of-Flight Range Sensor Using Four-Tap Lock-In Pixels with High near Infrared Sensitivity for LiDAR Applications

In this paper, a back-illuminated (BSI) time-of-flight (TOF) sensor using 0.2 µm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology is developed for long-range laser imaging detection and ranging (LiDAR) application. A 200 µm-thick bulk silicon in the SOI substrate is fully depleted by applying high negative voltage at the backside for higher quantum efficiency (QE) in a near-infrared (NIR) region. The proposed SOI-based four-tap charge modulator achieves a high-speed charge modulation and high modulation contrast of 71% in a NIR region. In addition, in-pixel drain function is used for short-pulse TOF measurements. A distance measurement up to 27 m is carried out with +1.8~−3.0% linearity error and range resolution of 4.5 cm in outdoor conditions. The measured QE of 55% is attained at 940 nm which is suitable for outdoor use due to the reduced spectral components of solar radiation.

Rapid Motion Segmentation of LiDAR Point Cloud Based on a Combination of Probabilistic and Evidential Approaches for Intelligent Vehicles

Point clouds from light detecting and ranging (LiDAR) sensors represent increasingly important information for environmental object detection and classification of automated and intelligent vehicles. Objects in the driving environment can be classified as either dynamic or static depending on their movement characteristics. A LiDAR point cloud is also segmented into dynamic and static points based on the motion properties of the measured objects. The segmented motion information of a point cloud can be useful for various functions in automated and intelligent vehicles. This paper presents a fast motion segmentation algorithm that segments a LiDAR point cloud into dynamic and static points in real-time. The segmentation algorithm classifies the motion of the latest point cloud based on the LiDAR’s laser beam characteristics and the geometrical relationship between consecutive LiDAR point clouds. To accurately and reliably estimate the motion state of each LiDAR point considering the measurement uncertainty, both probability theory and evidence theory are employed in the segmentation algorithm. The probabilistic and evidential algorithm segments the point cloud into three classes: dynamic, static, and unknown. Points are placed in the unknown class when LiDAR point cloud is not sufficient for motion segmentation. The point motion segmentation algorithm was evaluated quantitatively and qualitatively through experimental comparisons with previous motion segmentation methods.

Indirect Time-of-Flight Depth Sensor with Two-Step Comparison Scheme for Depth Frame Difference Detection

A depth sensor with integrated frame difference detection is proposed. Instead of frame difference detection using light intensity, which is vulnerable to ambient light, the difference in depth between successive frames can be acquired. Because the conventional time-of-flight depth sensor requires two frames of depth-image acquisition with four-phase modulation, it has large power consumption, as well as a large area for external frame memories. Therefore, we propose a simple two-step comparison scheme for generating the depth frame difference in a single frame. With the proposed scheme, only a single frame is needed to obtain the frame difference, with less than half of the power consumption of the conventional depth sensor. Because the frame difference is simply generated by column-parallel circuits, no access of the external frame memory is involved, nor is a digital signal processor. In addition, we used an over-pixel metal-insulator-metal capacitor to store temporary signals for enhancing the area efficiency. A prototype chip was fabricated using a 90 nm backside illumination complementary metal-oxide-semiconductor (CMOS) image sensor process. We measured the depth frame difference in the range of 1-2.5 m. With a 10 MHz modulation frequency, a depth frame difference of >10 cm was successfully detected even for objects with different reflectivity. The maximum relative error from the difference of the reflectivity (white and wooden targets) was <3%.

High performance planar germanium-on-silicon single-photon avalanche diode detectors

Single-photon detection has emerged as a method of choice for ultra-sensitive measurements of picosecond optical transients. In the short-wave infrared, semiconductor-based single-photon detectors typically exhibit relatively poor performance compared with all-silicon devices operating at shorter wavelengths. Here we show a new generation of planar germanium-on-silicon (Ge-on-Si) single-photon avalanche diode (SPAD) detectors for short-wave infrared operation. This planar geometry has enabled a significant step-change in performance, demonstrating single-photon detection efficiency of 38% at 125 K at a wavelength of 1310 nm, and a fifty-fold improvement in noise equivalent power compared with optimised mesa geometry SPADs. In comparison with InGaAs/InP devices, Ge-on-Si SPADs exhibit considerably reduced afterpulsing effects. These results, utilising the inexpensive Ge-on-Si platform, provide a route towards large arrays of efficient, high data rate Ge-on-Si SPADs for use in eye-safe automotive LIDAR and future quantum technology applications.

By incorporating germanium, single-photon avalanche diode detectors using silicon-based platforms are applied to infrared light detection. Here, a cost-effective planar detector geometry is presented yielding high detection efficiency suitable for applications such as sparse photon imaging or LIDAR.

Demonstration of a new optical scanner using silicon photonics integrated circuit

The reliability and small size of solid state scanners makes them ideal for LIDAR. We fabricated and demonstrated the successful operation of an optical scanner using silicon photonics integrated circuit technology. The scanner comprises a ring resonator multiplexer and a number of grating arrays, and employs a beam switching method, which means that the scanner is movement-free. The multiplexer determines the optical path and light is emitted from the selected grating. The scanning angle obtained was 6 degrees. LIDAR sensors can be used in automotive applications for automated cruising.

A 250 m Direct Time-of-Flight Ranging System Based on a Synthesis of Sub-Ranging Images and a Vertical Avalanche Photo-Diodes (VAPD) CMOS Image Sensor

We have developed a direct time-of-flight (TOF) 250 m ranging Complementary Metal Oxide Semiconductor (CMOS) image sensor (CIS) based on a 688 × 384 pixels array of vertical avalanche photodiodes (VAPD). Each pixel of the CIS comprises VAPD with a standard four transistor pixel circuit equipped with an analogue capacitor to accumulate or count avalanche pulses. High power near infrared (NIR) short (<50 ns) and repetitive (6 kHz) laser pulses are illuminated through a diffusing optics. By globally gating the VAPD, each pulse is counted in the in-pixel counter enabling extraction of sub-photon level signal. Depth map imaging with a 10 cm lateral resolution is realized from 1 m to 250 m range by synthesizing subranges images of photon counts. Advantages and limitation of an in-pixel circuit are described. The developed CIS is expected to supersede insufficient resolution of the conventional light detection and ranging (LiDAR) systems and the short range of indirect CIS TOF.

Red-Enhanced Photon Detection Module Featuring a 32 × 1 Single-Photon Avalanche Diode Array

In this letter, the development and the experimental characterization of a new photon detection module, based on a 32×1 red-enhanced single-photon avalanche diode (RE-SPAD) array, are presented. A custom-developed technology has been exploited to design a detector having large-area pixels (50-µm diameter) with optimized performance. With an excess bias voltage V_oυ = 15 V, a photon detection efficiency as high as 57% at 600 nm (33% at 800 nm) is achieved, along with dark count rate in the kHz range and optical crosstalk probability as low as 0.29%. The remarkable detection efficiency of the RE-SPAD array makes the module particularly suitable for all applications where high detection efficiency in the red/near-infrared range is mandatory. As an example, the performance of the array module is demonstrated to match the demanding requirements of multispot single-molecule fluorescence spectroscopy.

Cylindrical microlensing for enhanced collection efficiency of small pixel SPAD arrays in single-molecule localisation microscopy

Single-photon avalanche photodiode (SPAD) image sensors offer time-gated photon counting, at high binary frame rates of >100 kFPS and with no readout noise. This makes them well-suited to a range of scientific applications, including microscopy, sensing and quantum optics. However, due to the complex electronics required, the fill factor tends to be significantly lower (< 10%) than that of EMCCD and sCMOS cameras (>90%), whilst the pixel size is typically larger, impacting the sensitivity and practicalities of the SPAD devices. This paper presents the first characterisation of a cylindrical-shaped microlens array applied to a small, 8 micron, pixel SPAD imager. The enhanced fill factor, ≈50% for collimated light, is the highest reported value amongst SPAD sensors with comparable resolution and pixel pitch. We demonstrate the impact of the increased sensitivity in single-molecule localisation microscopy, obtaining a resolution of below 40nm, the best reported figure for a SPAD sensor.

Influence of Time-Pickoff Circuit Parameters on LiDAR Range Precision

A pulsed time-of-flight (TOF) measurement-based Light Detection and Ranging (LiDAR) system is more effective for medium-long range distances. As a key ranging unit, a time-pickoff circuit based on automatic gain control (AGC) and constant fraction discriminator (CFD) is designed to reduce the walk error and the timing jitter for obtaining the accurate time interval. Compared with Cramer–Rao lower bound (CRLB) and the estimation of the timing jitter, four parameters-based Monte Carlo simulations are established to show how the range precision is influenced by the parameters, including pulse amplitude, pulse width, attenuation fraction and delay time of the CFD. Experiments were carried out to verify the relationship between the range precision and three of the parameters, exclusing pulse width. It can be concluded that two parameters of the ranging circuit (attenuation fraction and delay time) were selected according to the ranging performance of the minimum pulse amplitude. The attenuation fraction should be selected in the range from 0.2 to 0.6 to achieve high range precision. The selection criterion of the time-pickoff circuit parameters is helpful for the ranging circuit design of TOF LiDAR system.

Note: Fully integrated active quenching circuit achieving 100 MHz count rate with custom technology single photon avalanche diodes

The minimization of Single Photon Avalanche Diodes (SPADs) dead time is a key factor to speed up photon counting and timing measurements. We present a fully integrated Active Quenching Circuit (AQC) able to provide a count rate as high as 100 MHz with custom technology SPAD detectors. The AQC can also operate the new red enhanced SPAD and provide the timing information with a timing jitter Full Width at Half Maximum (FWHM) as low as 160 ps.

High-voltage integrated active quenching circuit for single photon count rate up to 80 Mcounts/s

Single photon avalanche diodes (SPADs) have been subject to a fast improvement in recent years. In particular, custom technologies specifically developed to fabricate SPAD devices give the designer the freedom to pursue the best detector performance required by applications. A significant breakthrough in this field is represented by the recent introduction of a red enhanced SPAD (RE-SPAD) technology, capable of attaining a good photon detection efficiency in the near infrared range (e.g. 40% at a wavelength of 800 nm) while maintaining a remarkable timing resolution of about 100ps full width at half maximum. Being planar, the RE-SPAD custom technology opened the way to the development of SPAD arrays particularly suited for demanding applications in the field of life sciences. However, to achieve such excellent performance custom SPAD detectors must be operated with an external active quenching circuit (AQC) designed on purpose. Next steps toward the development of compact and practical multichannel systems will require a new generation of monolithically integrated AQC arrays. In this paper we present a new, fully integrated AQC fabricated in a high-voltage 0.18 µm CMOS technology able to provide quenching pulses up to 50 Volts with fast leading and trailing edges. Although specifically designed for optimal operation of RE-SPAD devices, the new AQC is quite versatile: it can be used with any SPAD detector, regardless its fabrication technology, reaching remarkable count rates up to 80 Mcounts/s and generating a photon detection pulse with a timing jitter as low as 119 ps full width at half maximum. The compact design of our circuit has been specifically laid out to make this IC a suitable building block for monolithically integrated AQC arrays.