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Kuai X, Wei L, Yang F, Yan W, Li Z, Wang X. Suppression Method of Optical Noises in Resonator-Integrated Optic Gyroscopes. SENSORS 2022; 22:s22082889. [PMID: 35458874 PMCID: PMC9032289 DOI: 10.3390/s22082889] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/14/2022] [Revised: 02/28/2022] [Accepted: 03/07/2022] [Indexed: 02/06/2023]
Abstract
Resonator-integrated optical gyroscopes have advantages such as all-solid-state, on-chip integration, miniaturized structure, and high precision. However, many factors deteriorate the performance and push it far from the shot-noise limited theoretical sensitivity. This paper reviews the mechanisms of various noises and their corresponding suppression methods in resonator-integrated optical gyroscopes, including the backscattering, the back-reflection, the polarization error, the Kerr effect, and the laser frequency noise. Several main noise suppression methods are comprehensively expounded through inductive comparison and reasonable collation. The new noise suppression technology and digital signal processing system are also addressed.
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Affiliation(s)
- Xuebao Kuai
- School of Microelectronics, University of Science and Technology of China, Hefei 230026, China;
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China; (L.W.); (F.Y.); (X.W.)
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
| | - Lei Wei
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China; (L.W.); (F.Y.); (X.W.)
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
- School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Fuhua Yang
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China; (L.W.); (F.Y.); (X.W.)
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
- Beijing Academy of Quantum Information Science, Beijing 100193, China
- Beijing Engineering Research Center of Semiconductor Micro-Nano Integrated Technology, Beijing 100083, China
| | - Wei Yan
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
- School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhaofeng Li
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China; (L.W.); (F.Y.); (X.W.)
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
- School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
- Correspondence:
| | - Xiaodong Wang
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China; (L.W.); (F.Y.); (X.W.)
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
- School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Academy of Quantum Information Science, Beijing 100193, China
- Beijing Engineering Research Center of Semiconductor Micro-Nano Integrated Technology, Beijing 100083, China
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