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Yang Z, Wang Z, Liu M, Sun X. Non-Contact Current Sensing System Based on the Giant Magnetoimpedance Effect of CoFeNiSiB Amorphous Ribbon Meanders. MICROMACHINES 2024; 15:161. [PMID: 38276860 PMCID: PMC10818478 DOI: 10.3390/mi15010161] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2023] [Revised: 01/17/2024] [Accepted: 01/19/2024] [Indexed: 01/27/2024]
Abstract
A sensitive non-contact sensing system based on the CoFeNiSiB amorphous ribbon giant magnetoimpedance (GMI) effect is proposed for current testing. The sensing system consists of a GMI probe, a sinusoidal current generator, a voltage follower, a preamplifier, a low-pass filter, and a peak detector. Four different GMI probes derived from amorphous ribbon meanders are designed and fabricated through MEMS processes. GMI probes were driven by a 10 MHz, 5 mA AC current. A permanent magnet was used to provide a bias magnetic field for the probe. The effect of the bias magnetic field on the output DC voltage was investigated. This non-contact current sensing system exhibits good sensitivity and linearity at a bias magnetic field Hbias = 15 Oe. The sensitivity can reach up to 24.2 mV/A in the ±1.5 A range.
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Affiliation(s)
- Zhen Yang
- School of Electronic and Information Engineering/School of Integrated Circuits, Guangxi Normal University, Guilin 541004, China
- Key Laboratory of Integrated Circuits and Microsystems, Education Department of Guangxi Zhuang Autonomous Region, Guangxi Normal University, Guilin 541004, China
- Guangxi Key Laboratory of Brain-Inspired Computing and Intelligent Chips, School of Electronic and Information Engineering, Guangxi Normal University, Guilin 541004, China
| | - Zhenbao Wang
- School of Electronic and Information Engineering/School of Integrated Circuits, Guangxi Normal University, Guilin 541004, China
- Key Laboratory of Integrated Circuits and Microsystems, Education Department of Guangxi Zhuang Autonomous Region, Guangxi Normal University, Guilin 541004, China
- Guangxi Key Laboratory of Brain-Inspired Computing and Intelligent Chips, School of Electronic and Information Engineering, Guangxi Normal University, Guilin 541004, China
| | - Mengyu Liu
- School of Electronic and Information Engineering/School of Integrated Circuits, Guangxi Normal University, Guilin 541004, China
- Key Laboratory of Integrated Circuits and Microsystems, Education Department of Guangxi Zhuang Autonomous Region, Guangxi Normal University, Guilin 541004, China
- Guangxi Key Laboratory of Brain-Inspired Computing and Intelligent Chips, School of Electronic and Information Engineering, Guangxi Normal University, Guilin 541004, China
| | - Xuecheng Sun
- Microelectronic Research & Development Center, School of Mechatronics Engineering and Automation, Shanghai University, Shanghai 200444, China
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Mostufa S, Rezaei B, Yari P, Xu K, Gómez-Pastora J, Sun J, Shi Z, Wu K. Giant Magnetoresistance Based Biosensors for Cancer Screening and Detection. ACS APPLIED BIO MATERIALS 2023; 6:4042-4059. [PMID: 37725557 DOI: 10.1021/acsabm.3c00592] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/21/2023]
Abstract
Early-stage screening of cancer is critical in preventing its development and therefore can improve the prognosis of the disease. One accurate and effective method of cancer screening is using high sensitivity biosensors to detect optically, chemically, or magnetically labeled cancer biomarkers. Among a wide range of biosensors, giant magnetoresistance (GMR) based devices offer high sensitivity, low background noise, robustness, and low cost. With state-of-the-art micro- and nanofabrication techniques, tens to hundreds of independently working GMR biosensors can be integrated into fingernail-sized chips for the simultaneous detection of multiple cancer biomarkers (i.e., multiplexed assay). Meanwhile, the miniaturization of GMR chips makes them able to be integrated into point-of-care (POC) devices. In this review, we first introduce three types of GMR biosensors in terms of their structures and physics, followed by a discussion on fabrication techniques for those sensors. In order to achieve target cancer biomarker detection, the GMR biosensor surface needs to be subjected to biological decoration. Thus, commonly used methods for surface functionalization are also reviewed. The robustness of GMR-based biosensors in cancer detection has been demonstrated by multiple research groups worldwide and we review some representative examples. At the end of this review, the challenges and future development prospects of GMR biosensor platforms are commented on. With all their benefits and opportunities, it can be foreseen that GMR biosensor platforms will transition from a promising candidate to a robust product for cancer screening in the near future.
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Affiliation(s)
- Shahriar Mostufa
- Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, United States
| | - Bahareh Rezaei
- Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, United States
| | - Parsa Yari
- Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, United States
| | - Kanglin Xu
- Department of Computer Science, Texas Tech University, Lubbock, Texas 79409, United States
| | - Jenifer Gómez-Pastora
- Department of Chemical Engineering, Texas Tech University, Lubbock, Texas 79409, United States
| | - Jiajia Sun
- State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province 710049, China
| | - Zongqian Shi
- State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province 710049, China
| | - Kai Wu
- Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, United States
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Hu X, Duan X, Zhang W, Fu Y, Li Y, Zhao P, Deng X, Yu C, Wang J. Design and Optimization of Multi-Stage TMR Sensors for Power Equipment AC/DC Leakage Current Detection. SENSORS (BASEL, SWITZERLAND) 2023; 23:4749. [PMID: 37430662 DOI: 10.3390/s23104749] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2023] [Revised: 05/10/2023] [Accepted: 05/11/2023] [Indexed: 07/12/2023]
Abstract
Tunnel magnetoresistance (TMR) can measure weak magnetic fields and has significant advantages for use in alternating current/direct current (AC/DC) leakage current sensors for power equipment; however, TMR current sensors are easily perturbed by external magnetic fields, and their measurement accuracy and measurement stability are limited in complex engineering application environments. To enhance the TMR sensor measurement performance, this paper proposes a new multi-stage TMR weak AC/DC sensor structure with high measurement sensitivity and anti-magnetic interference capability. The front-end magnetic measurement characteristics and interference immunity of the multi-stage TMR sensor are found to be closely related to the multi-stage ring size design via finite element simulation. The optimal size of the multipole magnetic ring is determined using an improved non-dominated ranking genetic algorithm (ACGWO-BP-NSGA-II) to derive the optimal sensor structure. Experimental results demonstrate that the newly designed multi-stage TMR current sensor has a measurement range of 60 mA, a fitting nonlinearity error of less than 1%, a measurement bandwidth of 0-80 kHz, a minimum AC measurement value of 85 μA and a minimum DC measurement value of 50 μA, as well as a strong external electromagnetic interference. The TMR sensor can effectively enhance measurement precision and stability in the presence of intense external electromagnetic interference.
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Affiliation(s)
- Xiaoxu Hu
- State Key Laboratory of Power Transmission Equipment and System Security, Chongqing University, Chongqing 400044, China
| | - Xuetao Duan
- State Key Laboratory of Power Transmission Equipment and System Security, Chongqing University, Chongqing 400044, China
| | - Wei Zhang
- State Key Laboratory of Power Transmission Equipment and System Security, Chongqing University, Chongqing 400044, China
| | - Yameng Fu
- State Key Laboratory of Power Transmission Equipment and System Security, Chongqing University, Chongqing 400044, China
| | - Yongfu Li
- State Grid Chongqing Electric Power Research Institute, Chongqing 401123, China
| | - Pengcheng Zhao
- State Key Laboratory of Power Transmission Equipment and System Security, Chongqing University, Chongqing 400044, China
| | - Xudong Deng
- State Grid Chongqing Electric Power Company Ultra High Voltage Branch, Chongqing 400039, China
| | - Chuanxiang Yu
- State Key Laboratory of Power Transmission Equipment and System Security, Chongqing University, Chongqing 400044, China
| | - Jingang Wang
- State Key Laboratory of Power Transmission Equipment and System Security, Chongqing University, Chongqing 400044, China
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Lee J, Jeon C, Jeon T, Das PT, Lee Y, Lim B, Kim C. Bridge Resistance Compensation for Noise Reduction in a Self-Balanced PHMR Sensor. SENSORS (BASEL, SWITZERLAND) 2021; 21:3585. [PMID: 34064121 PMCID: PMC8196689 DOI: 10.3390/s21113585] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/28/2021] [Revised: 05/18/2021] [Accepted: 05/19/2021] [Indexed: 12/03/2022]
Abstract
Advanced microelectromechanical system (MEMS) magnetic field sensor applications demand ultra-high detectivity down to the low magnetic fields. To enhance the detection limit of the magnetic sensor, a resistance compensator integrated self-balanced bridge type sensor was devised for low-frequency noise reduction in the frequency range of 0.5 Hz to 200 Hz. The self-balanced bridge sensor was a NiFe (10 nm)/IrMn (10 nm) bilayer structure in the framework of planar Hall magnetoresistance (PHMR) technology. The proposed resistance compensator integrated with a self-bridge sensor architecture presented a compact and cheaper alternative to marketable MEMS MR sensors, adjusting the offset voltage compensation at the wafer level, and led to substantial improvement in the sensor noise level. Moreover, the sensor noise components of electronic and magnetic origin were identified by measuring the sensor noise spectral density as a function of temperature and operating power. The lowest achievable noise in this device architecture was estimated at ~3.34 nV/Hz at 100 Hz.
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Affiliation(s)
- Jaehoon Lee
- Department of Emerging Materials Science, DGIST, Daegu 42988, Korea; (J.L.); (C.J.); (T.J.)
| | - Changyeop Jeon
- Department of Emerging Materials Science, DGIST, Daegu 42988, Korea; (J.L.); (C.J.); (T.J.)
| | - Taehyeong Jeon
- Department of Emerging Materials Science, DGIST, Daegu 42988, Korea; (J.L.); (C.J.); (T.J.)
| | - Proloy Taran Das
- Magnetics Initiative Life Care Research Center, DGIST, Daegu 42988, Korea;
| | - Yongho Lee
- Quantum Magnetic Measurement Team, KRISS, Daejeon 34113, Korea;
| | - Byeonghwa Lim
- Magnetics Initiative Life Care Research Center, DGIST, Daegu 42988, Korea;
| | - CheolGi Kim
- Department of Emerging Materials Science, DGIST, Daegu 42988, Korea; (J.L.); (C.J.); (T.J.)
- Magnetics Initiative Life Care Research Center, DGIST, Daegu 42988, Korea;
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Azab E, Hegazy YG, Reeg H, Schwickert M, Hofmann K. Tunneling Magnetoresistance DC Current Transformer for Ion Beam Diagnostics. SENSORS 2021; 21:s21093043. [PMID: 33925289 PMCID: PMC8123615 DOI: 10.3390/s21093043] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/10/2021] [Revised: 04/22/2021] [Accepted: 04/23/2021] [Indexed: 11/25/2022]
Abstract
In this paper, open loop and closed loop Tunneling Magnetoresistance (TMR) DC Current Transformers (DCCTs) for ion beam diagnostics are presented. The DCCTs employ MR sensors to measure the DC component of the accelerator’s ion beam. A comparative study between Giant Magnetoresistance (GMR) and TMR sensors is presented to illustrate the sensor selection criterion for the DCCT application. The two proposed DCCTs are studied in open and closed loop configurations. A closed loop feedback electronic system is designed to generate a feedback current equivalent to the ion beam current such that the sensor operates at zero flux. Furthermore, theoretical and experimental results for the TMR-based DCCT including noise analysis are presented for both open loop and closed loop configurations. Both configurations’ minimum detectable currents are in the range of microampere. The proposed closed loop hardware prototype has a settling time of less than 15 μs. The measured minimum detectable currents for the open and closed loop TMR-based DCCTs are 128.2 μA/Hz and 10.14 μA/Hz at 1 Hz, respectively.
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Affiliation(s)
- Eman Azab
- Electronics Department, Faculty of Information Engineering Technology, German University in Cairo, New Cairo 11835, Egypt;
- Correspondence: ; Tel.: +20-100-1940-919
| | - Yasser G. Hegazy
- Electronics Department, Faculty of Information Engineering Technology, German University in Cairo, New Cairo 11835, Egypt;
| | - Hansjoerg Reeg
- Beam Instrumentation Department, GSI Helmholtzzentrum, 64291 Darmstadt, Germany; (H.R.); (M.S.)
| | - Marcus Schwickert
- Beam Instrumentation Department, GSI Helmholtzzentrum, 64291 Darmstadt, Germany; (H.R.); (M.S.)
| | - Klaus Hofmann
- Electrical Engineering and Information Technology Department, Technical University Darmstadt, 64283 Darmstadt, Germany;
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Low Field Optimization of a Non-Contacting High-Sensitivity GMR-Based DC/AC Current Sensor. SENSORS 2021; 21:s21072564. [PMID: 33917498 PMCID: PMC8038796 DOI: 10.3390/s21072564] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/09/2021] [Revised: 04/02/2021] [Accepted: 04/04/2021] [Indexed: 11/28/2022]
Abstract
Many applications require galvanic isolation between the circuit where the current is flowing and the measurement device. While for AC, the current transformer is the method of choice, in DC and, especially for low currents, other sensing methods must be used. This paper aims to provide a practical method of improving the sensitivity and linearity of a giant magnetoresistance (GMR)-based current sensor by adapting a set of design rules and methods easy to be implemented. Our approach utilizes a multi-trace current trace and a double differential GMR based detection system. This essentially constitutes a planar coil which would effectively increase the usable magnetic field detected by the GMR sensor. An analytical model is developed for calculating the magnetic field generated by the current in the GMR sensing area which showed a significant increase in sensitivity up to 13 times compared with a single biased sensor. The experimental setup can measure both DC and AC currents between 2–300 mA, with a sensitivity between 15.62 to 23.19 mV/mA, for biasing fields between 4 to 8 Oe with a detection limit of 100 μA in DC and 100 to 300 μA in AC from 10 Hz to 50 kHz. Because of the double differential setup, the detection system has a high immunity to external magnetic fields and a temperature drift of the offset of about −2.59 × 10−4 A/°C. Finally, this setup was adapted for detection of magnetic nanoparticles (MNPs) which can be used to label biomolecules in lab-on-a-chip applications and preliminary results are reported.
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Magnetoelectric Vortex Magnetic Field Sensors Based on the Metglas/PZT Laminates. SENSORS 2020; 20:s20102810. [PMID: 32429105 PMCID: PMC7285217 DOI: 10.3390/s20102810] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/01/2020] [Revised: 05/05/2020] [Accepted: 05/08/2020] [Indexed: 11/17/2022]
Abstract
This paper describes the route, from simulations toward experiments, for optimizing the magnetoelectric (ME) geometries for vortex magnetic field sensors. The research is performed on the base of the Metglas/Piezoelectric (PZT) laminates in both open and closed magnetic circuit (OMC and CMC) geometries with different widths (W), lengths (L), and diameters (D). Among these geometries, the CMC laminates demonstrate advantages not only in their magnetic flux distribution, but also in their sensitivity and in their independence of the position of the vortex center. In addition, the ME voltage signal is found to be enhanced by increasing the magnetostrictive volume fraction. Optimal issues are incorporated to realize a CMC-based ME double sandwich current sensor in the ring shape with D × W = 6 mm × 1.5 mm and four layers of Metglas. At the resonant frequency of 174.4 kHz, this sensor exhibits the record sensitivity of 5.426 V/A as compared to variety of devices such as the CMC ME sensor family, fluxgate, magnetoresistive, and Hall-effect-based devices. It opens a potential to commercialize a new generation of ME-based current and (or) vortex magnetic sensors.
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