Electroplating of Multiple Materials in Parallel Using Patterned Gels with Applications in Electrochemical Sensing

Tin Whiskers' Behavior under Stress Load and the Mitigation Method for Immersion Tin Surface Finish

Since the use of the most stable Pb-based materials in the electronic industry has been banned due to human health concerns, numerous research studies have focused on Pb-free materials such as pure tin and its alloys for electronic applications. Pure tin, however, suffers from tin whiskers' formation, which tends to endanger the efficiency of electronic circuits, and even worse, may cause short circuits to the electronic components. This research aims to investigate the effects of stress on tin whiskers' formation and growth and the mitigation method for the immersion of the tin surface's finish deposited on a copper substrate. The coated surface was subjected to external stress by micro-hardness indenters with a 2N load in order to simulate external stress applied to the coating layer, prior to storage in the humidity chamber with environmental conditions of 30 °C/60% RH up to 52 weeks. A nickel underlayer was deposited between the tin surface finish and copper substrate to mitigate the formation and growth of tin whiskers. FESEM was used to observe the whiskers and EDX was used for measuring the chemical composition of the surface finish, tin whiskers, and oxides formed after a certain period of storage. An image analyzer was used to measure the whiskers' length using the JEDEC Standard (JESD22-A121A). The results showed that the tin whiskers increased directly proportional to the storage time, and they formed and grew longer on the thicker tin coating (2.3 μm) than the thin coating (1.5 μm). This is due to greater internal stress being generated by the thicker intermetallic compounds identified as the Cu₅Sn₆ phase, formed on a thicker tin coating. In addition, the formation and growth of CuO flowers on the 1.5 μm-thick tin coating suppressed the growth of tin whiskers. However, the addition of external stress by an indentation on the tin coating surface showed that the tin whiskers' growth discontinued after week 4 in the indented area. Instead, the whiskers that formed were greater and longer at a distance farther from the indented area due to Sn atom migration from a high stress concentration to a lower stress concentration. Nonetheless, the length of the whisker for the indented surface was shorter than the non-indented surface because the whiskers' growth was suppressed by the formation of CuO flowers. On the other hand, a nickel underlayer successfully mitigated the formation of tin whiskers upon the immersion of a tin surface finish.

Copper Nitride Nanowire Arrays-Comparison of Synthetic Approaches

Copper nitride nanowire arrays were synthesized by an ammonolysis reaction of copper oxide precursors grown on copper surfaces in an ammonia solution. The starting Cu films were deposited on a silicon substrate using two different methods: thermal evaporation (30 nm thickness) and electroplating (2 μm thickness). The grown CuO or CuO/Cu(OH)₂ architectures were studied in regard to morphology and size, using electron microscopy methods (SEM, TEM). The final shape and composition of the structures were mostly affected by the concentration of the ammonia solution and time of the immersion. Needle-shaped 2–3 μm long nanostructures were formed from the electrodeposited copper films placed in a 0.033 M NH₃ solution for 48 h, whereas for the copper films obtained by physical vapor deposition (PVD), well-aligned nano-needles were obtained after 3 h. The phase composition of the films was studied by X-ray diffraction (XRD) and selected area electron diffraction (SAED) analysis, indicating a presence of CuO and Cu(OH)₂, as well as Cu residues. Therefore, in order to obtain a pure oxide film, the samples were thermally treated at 120–180 °C, after which the morphology of the structures remained unchanged. In the final stage of this study, Cu₃N nanostructures were obtained by an ammonolysis reaction at 310 °C and studied by SEM, TEM, XRD, and spectroscopic methods. The fabricated PVD-derived coatings were also analyzed using a spectroscopic ellipsometry method, in order to calculate dielectric function, band gap and film thickness.

Electrodeposition Fabrication of Chalcogenide Thin Films for Photovoltaic Applications

Electrodeposition, which features low cost, easy scale-up, good control in the composition and great flexible substrate compatibility, is a favorable technique for producing thin films. This paper reviews the use of the electrodeposition technique for the fabrication of several representative chalcogenides that have been widely used in photovoltaic devices. The review focuses on narrating the mechanisms for the formation of films and the key factors that affect the morphology, composition, crystal structure and electric and photovoltaic properties of the films. The review ends with a remark section addressing some of the key issues in the electrodeposition method towards creating high quality chalcogenide films.