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Samy O, Belmoubarik M, Otsuji T, El Moutaouakil A. A Voltage-Tuned Terahertz Absorber Based on MoS 2/Graphene Nanoribbon Structure. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13111716. [PMID: 37299619 DOI: 10.3390/nano13111716] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2023] [Revised: 05/07/2023] [Accepted: 05/19/2023] [Indexed: 06/12/2023]
Abstract
Terahertz frequency has promising applications in communication, security scanning, medical imaging, and industry. THz absorbers are one of the required components for future THz applications. However, nowadays, obtaining a high absorption, simple structure, and ultrathin absorber is a challenge. In this work, we present a thin THz absorber that can be easily tuned through the whole THz range (0.1-10 THz) by applying a low gate voltage (<1 V). The structure is based on cheap and abundant materials (MoS2/graphene). Nanoribbons of MoS2/graphene heterostructure are laid over a SiO2 substrate with an applied vertical gate voltage. The computational model shows that we can achieve an absorptance of approximately 50% of the incident light. The absorptance frequency can be tuned through varying the structure and the substrate dimensions, where the nanoribbon width can be varied approximately from 90 nm to 300 nm, while still covering the whole THz range. The structure performance is not affected by high temperatures (500 K and above), so it is thermally stable. The proposed structure represents a low-voltage, easily tunable, low-cost, and small-size THz absorber that can be used in imaging and detection. It is an alternative to expensive THz metamaterial-based absorbers.
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Affiliation(s)
- Omnia Samy
- College of Engineering, United Arab University, Al Ain P.O. Box 15551, United Arab Emirates
| | - Mohamed Belmoubarik
- International Iberian Nanotechnology Laboratory, INL, Av. Mestre José Veiga s/n, 4715-330 Braga, Portugal
| | - Taiichi Otsuji
- Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
| | - Amine El Moutaouakil
- College of Engineering, United Arab University, Al Ain P.O. Box 15551, United Arab Emirates
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EL-Wasif Z, Ismail T, Hamdy O. Design and optimization of highly sensitive multi-band terahertz metamaterial biosensor for coronaviruses detection. OPTICAL AND QUANTUM ELECTRONICS 2023; 55:604. [PMID: 37215398 PMCID: PMC10183105 DOI: 10.1007/s11082-023-04906-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/09/2022] [Accepted: 03/03/2023] [Indexed: 05/24/2023]
Abstract
This study presents the design and characterization of a highly Q-Factor and ultrasensitive THz refractive-index-based metamaterial biosensor for detecting coronaviruses at electronic infusion device (EID) concentrations 0.01 and 1000. The proposed biosensor is constructed using a gold plane perforated by a star shape. Moreover, the developed structure is polarization insensitive due to the rotatory symmetry and is angularly stable up to 90°. The proposed biosensor achieves near-perfect absorption at 1.9656 THz and 3.3692 THz. The full width at half-maximum is 5.276% and 0.641% comparative to the absorption frequency. In addition, the estimated free space absorptivity is 97.2% and 99.1% with a Q-Factor of 19.08 and 155.98 at 1.9656 THz and 3.3692 THz, respectively, when transverse electromagnetic mode (TEM) was selected. The perforated star-shaped was evaluated for IBV (Family of COVID-19) regarding frequency deviation, sensitivity, and figure of merit. Results show that at 1.9656 THz, the proposed design gives 30.8 GHz, 940.49 GHz/RIU, and 8.6, respectively, for 0.01 (EID/5 µL concentration) and 4.4 GHz, 2200 × 103 GHz/RIU, and 20,215.014, respectively at 1.9612 THz for 1000 (EID/5 µL concentration). Although the obtained results demonstrate the efficiency of the proposed THz metamaterial biosensor in coronavirus detection, it has also been extended for other types of viruses, including H5N1, H5N2, H9N2, H4N6, and FAdV, based on the slight variations in their refractive indices. Additionally, the influence of the design parameters is optimized in order to achieve better performance.
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Affiliation(s)
- Zienab EL-Wasif
- National Institute of Laser Enhanced Sciences, Cairo University, Giza, 12613 Egypt
| | - Tawfik Ismail
- National Institute of Laser Enhanced Sciences, Cairo University, Giza, 12613 Egypt
- Wireless Intelligent Networks Center (WINC), Nile University, Giza, Egypt
| | - Omnia Hamdy
- National Institute of Laser Enhanced Sciences, Cairo University, Giza, 12613 Egypt
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Progress in THz Rectifier Technology: Research and Perspectives. NANOMATERIALS 2022; 12:nano12142479. [PMID: 35889702 PMCID: PMC9320463 DOI: 10.3390/nano12142479] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/02/2022] [Revised: 07/04/2022] [Accepted: 07/14/2022] [Indexed: 11/30/2022]
Abstract
Schottky diode (SD) has seen great improvements in the past few decades and, for many THz applications, it is the most useful device. However, the use and recycling of forms of energy such as solar energy and the infrared thermal radiation that the Earth continuously emits represent one of the most relevant and critical issues for this diode, which is unable to rectify signals above 5 THz. The goal is to develop highly efficient diodes capable of converting radiation from IR spectra to visible ones in direct current (DC). A set of performance criteria is investigated to select some of the most prominent materials required for developing innovative types of electrodes, but also a wide variety of insulator layers is required for the rectification process, which can affect the performance of the device. The current rectifying devices are here reviewed according to the defined performance criteria. The main aim of this review is to provide a wide overview of recent research progress, specific issues, performance, and future directions in THz rectifier technology based on quantum mechanical tunneling and asymmetric structure.
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Analysis of Electromagnetic Properties of New Graphene Partial Discharge Sensor Electrode Plate Material. SENSORS 2022; 22:s22072550. [PMID: 35408165 PMCID: PMC9002766 DOI: 10.3390/s22072550] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/26/2022] [Revised: 03/20/2022] [Accepted: 03/25/2022] [Indexed: 12/10/2022]
Abstract
Advanced sensing and measurement technology is the key to realizing the transparent power grid and electric internet of things. Meanwhile, sensors, as an indispensable part of the smart grid, can monitor, collect, process, and transmit various types of data information of the power system in real-time. In this way, it is possible to further control the power system. Among them, partial discharge (PD) sensors are of great importance in the fields of online monitoring of insulation condition, intelligent equipment control, and power maintenance of power systems. Therefore, this paper intends to focus on advanced sensing materials and study new materials for the improvement for partial discharge sensors. As two-dimensional material, graphene is introduced. The electromagnetic properties of graphene partial discharge sensor electrode plate material are analyzed theoretically. By studying the influence of different chemical potential, relaxation time, temperature, and frequency, we obtain the changing curve of conductivity, dielectric constant, and refractive index. A linear regression model based on the least-squares method was developed for the three electromagnetic properties. Finally, the simulation and experiment verified that the graphene partial discharge sensor has better absorption of the partial discharge signal. This study can apply to the design of graphene partial discharge sensors.
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Witjaksono G, Junaid M, Khir MH, Ullah Z, Tansu N, Saheed MSBM, Siddiqui MA, Ba-Hashwan SS, Algamili AS, Magsi SA, Aslam MZ, Nawaz R. Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide. Molecules 2021; 26:6424. [PMID: 34770833 PMCID: PMC8588234 DOI: 10.3390/molecules26216424] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/22/2021] [Revised: 08/29/2021] [Accepted: 08/31/2021] [Indexed: 11/16/2022] Open
Abstract
Graphene as a material for optoelectronic design applications has been significantly restricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanced electrical conductivity was synthesized via a microwave-assisted hydrothermal method. The properties of the synthesized N-rGO were determined using XPS, FTIR and Raman spectroscopy, UV/vis, as well as FESEM techniques. The UV/vis spectroscopic analysis confirmed the narrowness of the optical bandgap from 3.4 to 3.1, 2.5, and 2.2 eV in N-rGO samples, where N-rGO samples were synthesized with a nitrogen doping concentration of 2.80, 4.53, and 5.51 at.%. Besides, an enhanced n-type electrical conductivity in N-rGO was observed in Hall effect measurement. The observed tunable optoelectrical characteristics of N-rGO make it a suitable material for developing future optoelectronic devices at the nanoscale.
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Affiliation(s)
- Gunawan Witjaksono
- BRI Institute, Jl. Harsono RM No. 2, Ragunan, Jakarta 12550, Passsar Minggu, Indonesia
| | - Muhammad Junaid
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia; (M.H.K.); (Z.U.); (M.A.S.); (S.S.B.-H.); (A.S.A.); (S.A.M.); (M.Z.A.)
- Department of Electronic Engineering, Balochistan University of Information Technology, Engineering and Management Sciences, Quetta 87300, Balochistan, Pakistan
| | - Mohd Haris Khir
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia; (M.H.K.); (Z.U.); (M.A.S.); (S.S.B.-H.); (A.S.A.); (S.A.M.); (M.Z.A.)
| | - Zaka Ullah
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia; (M.H.K.); (Z.U.); (M.A.S.); (S.S.B.-H.); (A.S.A.); (S.A.M.); (M.Z.A.)
| | - Nelson Tansu
- School of Electrical and Electronic Engineering, The University of Adelaide, Adelaide, SA 5005, Australia;
- Institute for Photonics and Advanced Sensing, The University of Adelaide, Adelaide, SA 5005, Australia
| | | | - Muhammad Aadil Siddiqui
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia; (M.H.K.); (Z.U.); (M.A.S.); (S.S.B.-H.); (A.S.A.); (S.A.M.); (M.Z.A.)
| | - Saeed S. Ba-Hashwan
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia; (M.H.K.); (Z.U.); (M.A.S.); (S.S.B.-H.); (A.S.A.); (S.A.M.); (M.Z.A.)
| | - Abdullah Saleh Algamili
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia; (M.H.K.); (Z.U.); (M.A.S.); (S.S.B.-H.); (A.S.A.); (S.A.M.); (M.Z.A.)
| | - Saeed Ahmed Magsi
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia; (M.H.K.); (Z.U.); (M.A.S.); (S.S.B.-H.); (A.S.A.); (S.A.M.); (M.Z.A.)
| | - Muhammad Zubair Aslam
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia; (M.H.K.); (Z.U.); (M.A.S.); (S.S.B.-H.); (A.S.A.); (S.A.M.); (M.Z.A.)
| | - Rab Nawaz
- Department of Fundamental Science, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia; or
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Acoustoelectric current in graphene nanoribbon due to Landau damping. Sci Rep 2021; 11:17913. [PMID: 34504139 PMCID: PMC8429432 DOI: 10.1038/s41598-021-95896-6] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/06/2021] [Accepted: 07/29/2021] [Indexed: 11/08/2022] Open
Abstract
We perform self-consistent analysis of the Boltzmann transport equation for momentum and energy in the hypersound regime i.e., [Formula: see text] ([Formula: see text] is the acoustic wavenumber and l is the mean free path). We investigate the Landau damping of acoustic phonons ([Formula: see text]) in graphene nanoribbons, which leads to acoustoelectric current generation. Under a non-quantized field with drift velocity, we observed an acoustic phonon energy quantization that depends on the energy gap, the width, and the sub-index of the material. An effect similar to Cerenkov emission was observed, where the electron absorbed the confined acoustic phonon energy, causing the generation of acoustoelectric current in the graphene nanoribbon. A qualitative analysis of the dependence of the absorption coefficient and the acoustoelectric current on the phonon frequency is in agreement with experimental reports. We observed a shift in the peaks when the energy gap and the drift velocity were varied. Most importantly, a transparency window appears when the absorption coefficient is zero, making graphene nanoribbons a potential candidate for use as an acoustic wave filter with applications in tunable gate-controlled quantum information devices and phonon spectrometers.
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Junaid M, Md Khir MH, Witjaksono G, Ullah Z, Tansu N, Saheed MSM, Kumar P, Hing Wah L, Magsi SA, Siddiqui MA. A Review on Graphene-Based Light Emitting Functional Devices. Molecules 2020; 25:E4217. [PMID: 32937975 PMCID: PMC7571148 DOI: 10.3390/molecules25184217] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/21/2020] [Revised: 07/13/2020] [Accepted: 07/15/2020] [Indexed: 12/05/2022] Open
Abstract
In recent years, the field of nanophotonics has progressively developed. However, constant demand for the development of new light source still exists at the nanometric scale. Light emissions from graphene-based active materials can provide a leading platform for the development of two dimensional (2-D), flexible, thin, and robust light-emitting sources. The exceptional structure of Dirac's electrons in graphene, massless fermions, and the linear dispersion relationship with ultra-wideband plasmon and tunable surface polarities allows numerous applications in optoelectronics and plasmonics. In this article, we present a comprehensive review of recent developments in graphene-based light-emitting devices. Light emissions from graphene-based devices have been evaluated with different aspects, such as thermal emission, electroluminescence, and plasmons assisted emission. Theoretical investigations, along with experimental demonstration in the development of graphene-based light-emitting devices, have also been reviewed and discussed. Moreover, the graphene-based light-emitting devices are also addressed from the perspective of future applications, such as optical modulators, optical interconnects, and optical sensing. Finally, this review provides a comprehensive discussion on current technological issues and challenges related to the potential applications of emerging graphene-based light-emitting devices.
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Affiliation(s)
- Muhammad Junaid
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia;
- Department of Electronic Engineering, Balochistan University of Information Technology, Engineering, and Management Sciences, Quetta 87300, Balochistan, Pakistan; (S.A.M.); (M.A.S.)
| | - M. H. Md Khir
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia;
| | - Gunawan Witjaksono
- BRI Institute, Jl. Harsono RM No.2, Ragunan, Passsar Minggu, Jakarta 12550, Indonesia;
| | - Zaka Ullah
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia;
| | - Nelson Tansu
- Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, 7 Asa Drive, Bethlehem, PA 18015, USA;
| | | | - Pradeep Kumar
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia;
| | - Lee Hing Wah
- Flexible Electronics R&D Lab, MIMOS BERHAD, Technology Park Malaysia, Kuala Lumpur 57000, Malaysia;
| | - Saeed Ahmed Magsi
- Department of Electronic Engineering, Balochistan University of Information Technology, Engineering, and Management Sciences, Quetta 87300, Balochistan, Pakistan; (S.A.M.); (M.A.S.)
| | - Muhammad Aadil Siddiqui
- Department of Electronic Engineering, Balochistan University of Information Technology, Engineering, and Management Sciences, Quetta 87300, Balochistan, Pakistan; (S.A.M.); (M.A.S.)
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Junaid M, Khir MHM, Witjaksono G, Tansu N, Saheed MSM, Kumar P, Ullah Z, Yar A, Usman F. Boron-Doped Reduced Graphene Oxide with Tunable Bandgap and Enhanced Surface Plasmon Resonance. Molecules 2020; 25:E3646. [PMID: 32796504 PMCID: PMC7465222 DOI: 10.3390/molecules25163646] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/10/2020] [Revised: 06/26/2020] [Accepted: 06/30/2020] [Indexed: 01/28/2023] Open
Abstract
Graphene and its hybrids are being employed as potential materials in light-sensing devices due to their high optical and electronic properties. However, the absence of a bandgap in graphene limits the realization of devices with high performance. In this work, a boron-doped reduced graphene oxide (B-rGO) is proposed to overcome the above problems. Boron doping enhances the conductivity of graphene oxide and creates several defect sites during the reduction process, which can play a vital role in achieving high-sensing performance of light-sensing devices. Initially, the B-rGO is synthesized using a modified microwave-assisted hydrothermal method and later analyzed using standard FESEM, FTIR, XPS, Raman, and XRD techniques. The content of boron in doped rGO was found to be 6.51 at.%. The B-rGO showed a tunable optical bandgap from 2.91 to 3.05 eV in the visible spectrum with an electrical conductivity of 0.816 S/cm. The optical constants obtained from UV-Vis absorption spectra suggested an enhanced surface plasmon resonance (SPR) response for B-rGO in the theoretical study, which was further verified by experimental investigations. The B-rGO with tunable bandgap and enhanced SPR could open up the solution for future high-performance optoelectronic and sensing applications.
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Affiliation(s)
- Muhammad Junaid
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia;
- Department of Electronic Engineering, Balochistan University of Information Technology, Engineering, and Management Sciences, Quetta 87300, Balochistan, Pakistan
| | - M. H. Md Khir
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia;
| | - Gunawan Witjaksono
- BRI Institute, Jl. Harsono RM No.2, Ragunan, Passsar Minggu, Jakarta 12550, Indonesia;
| | - Nelson Tansu
- Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, 7 Asa Drive, Bethlehem, PA 18015, USA;
| | | | - Pradeep Kumar
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia;
| | - Zaka Ullah
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia;
| | - Asfand Yar
- Department of Fundamental and Applied Sciences, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia; (A.Y.); (F.U.)
| | - Fahad Usman
- Department of Fundamental and Applied Sciences, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia; (A.Y.); (F.U.)
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