Gallium Nitride (GaN) Nanostructures and Their Gas Sensing Properties: A Review

Impedance-Based Detection of NO2 Using Ni-MOF-74: Influence of Competitive Gas Adsorption

Chemically robust, low-power sensors are needed for the direct electrical detection of toxic gases. Metal-organic frameworks (MOFs) offer exceptional chemical and structural tunability to meet this challenge, though further understanding is needed regarding how coadsorbed gases influence or interfere with the electrical response. To probe the influence of competitive gases on trace NO2 detection in a simulated flue gas stream, a combined structure-property study integrating synchrotron powder diffraction and pair distribution function analyses was undertaken, to elucidate how structural changes associated with gas binding inside Ni-MOF-74 pores correlate with the electrical response from Ni-MOF-74-based sensors. Data were evaluated for 16 gas combinations of N2, NO2, SO2, CO2, and H2O at 50 °C. Fourier difference maps from a rigid-body Rietveld analysis showed that additional electron density localized around the Ni-MOF-74 lattice correlated with large decreases in Ni-MOF-74 film resistance of up to a factor of 6 × 103, observed only when NO2 was present. These changes in resistance were significantly amplified by the presence of competing gases, except for CO2. Without NO2, H2O rapidly (<120 s) produced small (1-3×) decreases in resistance, though this effect could be differentiated from the slower adsorption of NO2 by the evaluation of the MOF's capacitance. Furthermore, samples exposed to H2O displayed a significant shift in lattice parameters toward a larger lattice and more diffuse charge density in the MOF pore. Evaluating the Ni-MOF-74 impedance in real time, NO2 adsorption was associated with two electrically distinct processes, the faster of which was inhibited by competitive adsorption of CO2. Together, this work points to the unique interaction of NO2 and other specific gases (e.g., H2O, SO2) with the MOF's surface, leading to orders of magnitude decrease in MOF resistance and enhanced NO2 detection. Understanding and leveraging these coadsorbed gases will further improve the gas detection properties of MOF materials.

Tailoring and functionalizing the graphitic-like GaN and GaP nanostructures as selective sensors for NO, NO2, and NH3 adsorbing: a DFT study

CONTEXT

Langmuir adsorption of gas molecules of NO, NO₂, and NH₃ on the graphitic GaN and GaP sheets has been accomplished using density functional theory. The changes of charge density have shown a more important charge transfer for GaN compared to GaP which acts both as the electron donor while gas molecules act as the stronger electron acceptors through adsorption on the graphitic-like GaN surface. The adsorption of NO and NO₂ molecules introduced spin polarization in the PL-GaN sheet, indicating that it can be employed as a magnetic gas sensor for NO and NO₂ sensing.

METHODS

The partial electron density states based on "PDOS" graphs have explained that the NO and NO₂ states in both of GaN and GaP nanosheets, respectively, have more of the conduction band between - 5 and - 10 eV, while expanded contribution of phosphorus states is close to gallium states, but nitrogen and oxygen states have minor contributions. GaN and GaP nanosheets represent having enough capability for adsorbing gases of NO, NO₂, and NH₃ through charge transfer from nitrogen atom and oxygen atom to the gallium element owing to intra-atomic and interatomic interactions. Ga sites in GaN and GaP nanosheets have higher interaction energy from Van der Waals' forces with gas molecules.

TiO2 Gas Sensors Combining Experimental and DFT Calculations: A Review

Gas sensors play an irreplaceable role in industry and life. Different types of gas sensors, including metal-oxide sensors, are developed for different scenarios. Titanium dioxide is widely used in dyes, photocatalysis, and other fields by virtue of its nontoxic and nonhazardous properties, and excellent performance. Additionally, researchers are continuously exploring applications in other fields, such as gas sensors and batteries. The preparation methods include deposition, magnetron sputtering, and electrostatic spinning. As researchers continue to study sensors with the help of modern computers, microcosm simulations have been implemented, opening up new possibilities for research. The combination of simulation and calculation will help us to better grasp the reaction mechanisms, improve the design of gas sensor materials, and better respond to different gas environments. In this paper, the experimental and computational aspects of TiO2 are reviewed, and the future research directions are described.

Recent progress of heterostructures based on two dimensional materials and wide bandgap semiconductors

Recent progress in the synthesis and assembly of two-dimensional (2D) materials has laid the foundation for various applications of atomically thin layer films. These 2D materials possess rich and diverse properties such as layer-dependent band gaps, interesting spin degrees of freedom, and variable crystal structures. They exhibit broad application prospects in micro-nano devices. In the meantime, the wide bandgap semiconductors (WBS) with an elevated breakdown voltage, high mobility, and high thermal conductivity have shown important applications in high-frequency microwave devices, high-temperature and high-power electronic devices. Beyond the study on single 2D materials or WBS materials, the multi-functional 2D/WBS heterostructures can promote the carrier transport at the interface, potentially providing novel physical phenomena and applications, and improving the performance of electronic and optoelectronic devices. In this review, we overview the advantages of the heterostructures of 2D materials and WBS materials, and introduce the construction methods of 2D/WBS heterostructures. Then, we present the diversity and recent progress in the applications of 2D/WBS heterostructures, including photodetectors, photocatalysis, sensors, and energy related devices. Finally, we put forward the current challenges of 2D/WBS heterostructures and propose the promising research directions in the future.

Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111)

We study the cross-sectional shape of GaN nanowires (NWs) by transmission electron microscopy. The shape is examined at different heights of long NWs, as well as at the same height for NWs of different lengths. Two distinct trends in the evolution of the cross-sectional shape along the NW length are observed. At the top, merging NWs develop common {11̄00} side facets. At the bottom, the NWs acquire roundish shapes. This observation is explained by the entirely different NW environments at the top and the bottom of the NWs. At the top, NWs are exposed to the Ga and N atomic fluxes giving rise to axial growth, resulting in the equilibrium growth shape with zero growth rate at the {11̄00} facets. At the bottom, NWs are shadowed from the impinging fluxes and are only annealed, allowing them to eventually approach the equilibrium crystal shape. The study of identical samples by grazing incidence small-angle X-ray scattering independently confirms these trends in the shape evolution of the sidewall facets.

Modular Assembly of Vibrationally and Electronically Coupled Rhenium Bipyridine Carbonyl Complexes on Silicon

Hybrid inorganic/organic heterointerfaces are promising systems for next-generation photocatalytic, photovoltaic, and chemical-sensing applications. Their performance relies strongly on the development of robust and reliable surface passivation and functionalization protocols with (sub)molecular control. The structure, stability, and chemistry of the semiconductor surface determine the functionality of the hybrid assembly. Generally, these modification schemes have to be laboriously developed to satisfy the specific chemical demands of the semiconductor surface. The implementation of a chemically independent, yet highly selective, standardized surface functionalization scheme, compatible with nanoelectronic device fabrication, is of utmost technological relevance. Here, we introduce a modular surface assembly (MSA) approach that allows the covalent anchoring of molecular transition-metal complexes with sub-nanometer precision on any solid material by combining atomic layer deposition (ALD) and selectively self-assembled monolayers of phosphonic acids. ALD, as an essential tool in semiconductor device fabrication, is used to grow conformal aluminum oxide activation coatings, down to sub-nanometer thicknesses, on silicon surfaces to enable a selective step-by-step layer assembly of rhenium(I) bipyridine tricarbonyl molecular complexes. The modular surface assembly of molecular complexes generates precisely structured spatial ensembles with strong intermolecular vibrational and electronic coupling, as demonstrated by infrared spectroscopy, photoluminescence, and X-ray photoelectron spectroscopy analysis. The structure of the MSA can be chosen to avoid electronic interactions with the semiconductor substrate to exclusively investigate the electronic interactions between the surface-immobilized molecular complexes.

Room-temperature operation of light-assisted NO2gas sensor based on GaN nanowires and graphene

We report the successful demonstration of a light-assisted NO₂gas sensor that operates at room temperature with high response. The gas sensor was fabricated with high-crystalline undoped-GaN nanowires (NWs) and graphene functioning as the light-absorbing medium and carrier channel, respectively. Exposure of the gas sensor to the NO₂concentration of 100 ppm at a light intensity of 1 mW cm^-2of a xenon lamp delivered a response of 16% at room temperature, which increased to 23% when the light intensity increased to 100 mW cm^-2. This value is higher than those previously reported for GaN-based NO₂gas sensors operating at room temperature. The room-temperature response of the gas sensor measured after six months was calculated to be 21.9%, which corresponds to 95% compared to the value obtained immediately after fabricating the devices. The response of the gas sensor after independently injecting NO₂, H₂S, H₂, CO, and CH₃CHO gases were measured to be 23, 5, 2.6, 2.2, and 1.7%, respectively. These results indicate that the gas sensor using GaN NWs and graphene provides high response, long-term stability, and good selectivity to NO₂gas at room temperature. In addition, the use of undoped-GaN NWs without using additional catalysts makes it possible to fabricate gas sensors that operate at room temperature simpler and better than conventional technologies.

Proliferation of the Light and Gas Interaction with GaN Nanorods Grown on a V-Grooved Si(111) Substrate for UV Photodetector and NO2 Gas Sensor Applications

Although excellent milestones of III-nitrides in optoelectronic devices have been achieved, the focus on the optimization of their geometrical structure for multiple applications is very rare. To address this issue, we exclusively designed a prototype device to enhance the photoconversion efficiency and gas interaction capabilities of GaN nanorods (NRs) grown on a V-grooved Si(100) substrate with Si(111) facets for photodetector and gas sensor applications. Photoluminescence studies have demonstrated an increased surface-to-volume ratio and light trapping for GaN NRs grown on V-grooved Si(111). GaN NRs on V-grooved Si(100) with Si(111) facets exhibited high photodetection performance in terms of photoresponsivity (217 mA/cm²), detectivity (3 × 10¹³ Jones), and external quantum efficiency (2.73 × 10⁵%) compared to GaN NRs grown on plain Si(111). Owing to the robust interconnection between NRs and a high surface-to-volume ratio, the GaN NRs grown on V-grooved Si(100) with Si(111) facets probed for NO₂ detection with the assistance of photonic energy. The photo-assisted sensing makes it possible to detect NO₂ gas at the ppb level at room temperature, resulting in significant power reduction. The device showed high selectivity to NO₂ against other target gases, such as NO, H₂S, H₂, NH₃, and CO. The device showed excellent long-term stability at room temperature; the humidity effect on the device performance was also examined. The excellent device performance was due to the following: (i) benefited from the V-grooved Si structure, GaN NRs significantly trapped the incident light, which promoted high photocurrent conversion efficiency and (ii) GaN NRs grown on V-grooved Si(100) with Si(111) facets increased the surface-to-volume ratio and thus improved the gas interaction with a better diffusion ratio and high light trapping, which resulted in increased response/recovery times. These results represent an important forward step in prototype devices for multiple applications in materials research.

Effects of surface oxidation on the pH-dependent surface charge of oxidized aluminum gallium nitride

HYPOTHESIS

The properties of the oxidized surface for common materials, such as silicon and titanium, are known to be markedly different from the reduced surface. We hypothesize that surface-oxidized aluminum gallium nitride ((oxidized-AlGaN)/GaN) surface charge behavior is different to unoxidized AlGaN (with ultrathin native oxide only), which can be validated via surfactant adsorption. Understanding these differences will explain why (oxidized-AlGaN)/GaN-based sensors are better performing than AlGaN ones, which has been previously demonstrated but not understood.

EXPERIMENTS

The surface of an AlGaN/GaN structure was oxidized with hot piranha solution and oxygen plasma. AFM force measurements and imaging were performed to probe the charge properties of the surface in aqueous solutions of varying pH containing only an acid or base, or with an added ionic surfactant: cationic cetyltrimethylammonium bromide (CTAB) or anionic sodium dodecylsulfate (SDS).

FINDINGS

The (oxidized-AlGaN)/GaN surface is positively charged at pH 4 and pH 5.5, although pH 5.5 should be close to the isoelectric point of the surface. The surface is negatively charged at pH 10 and pH 12, and sufficiently charged to attract cooperative adsorption of CTAB aggregates at pH 12. At pH 2, the evidence is inconclusive, but the surface is most likely positively charged. Compared to unoxidized AlGaN, the (oxidized-AlGaN)/GaN surface shows a wider range of surface charge magnitude over pH values between 2 and 12. This suggests that the (oxidized-AlGaN)/GaN surface has a higher surface hydroxyl group density than unoxidized AlGaN, which explains the higher sensitivity for pH sensors based on (oxidized-AlGaN)/GaN structures.

Morphology of Ga2O3 Nanowires and Their Sensitivity to Volatile Organic Compounds

Gas sensitive structures made of nanowires exhibit extremally large specific surface area, and a great number of chemically active centres that can react with the ambient atmosphere. This makes the use of nanomaterials promising for super sensitive gas sensor applications. Monoclinic β-Ga₂O₃ nanowires (NWs) were synthesized from metallic gallium at atmospheric pressure in the presence of nitrogen and water vapor. The nanowires were grown directly on interdigitated gold electrodes screen printed on Al₂O₃ substrates, which constituted the gas sensor structure. The observations made with transmission electron microscope (TEM) have shown that the nanowires are monocrystalline and their diameters vary from 80 to 300 nm with the average value of approximately 170 nm. Au droplets were found to be anchored at the tips of the nanowires which may indicate that the nanowires followed the Vapor-Liquid-Solid (VLS) mechanism of growth. The conductivity of β-Ga₂O₃ NWs increases in the presence of volatile organic compounds (VOC) even in the temperature below 600 °C. The gas sensor based on the synthesized β-Ga₂O₃ NWs shows peak sensitivity to 100 ppm of ethanol of 75.1 at 760 °C, while peak sensitivity to 100 ppm of acetone is 27.5 at 690 °C.

Back-Gate GaN Nanowire-Based FET Device for Enhancing Gas Selectivity at Room Temperature

In this work, a TiO₂-coated GaN nanowire-based back-gate field-effect transistor (FET) device was designed and implemented to address the well-known cross-sensitive nature of metal oxides. Even though a two-terminal TiO₂/GaN chemiresistor is highly sensitive to NO₂, it suffers from lack of selectivity toward NO₂ and SO₂. Here, a Si back gate with C-AlGaN as the gate dielectric was demonstrated as a tunable parameter, which enhances discrimination of these cross-sensitive gases at room temperature (20 °C). Compared to no bias, a back-gate bias resulted in a significant 60% increase in NO₂ response, whereas the increase was an insignificant 10% in SO₂ response. The differential change in gas response was explained with the help of a band diagram, derived from the energetics of molecular models based on density functional theory (DFT). The device geometries in this work are not optimized and are intended only for proving the concept.

Electrically Transduced Gas Sensors Based on Semiconducting Metal Oxide Nanowires

Semiconducting metal oxide-based nanowires (SMO-NWs) for gas sensors have been extensively studied for their extraordinary surface-to-volume ratio, high chemical and thermal stabilities, high sensitivity, and unique electronic, photonic and mechanical properties. In addition to improving the sensor response, vast developments have recently focused on the fundamental sensing mechanism, low power consumption, as well as novel applications. Herein, this review provides a state-of-art overview of electrically transduced gas sensors based on SMO-NWs. We first discuss the advanced synthesis and assembly techniques for high-quality SMO-NWs, the detailed sensor architectures, as well as the important gas-sensing performance. Relationships between the NWs structure and gas sensing performance are established by understanding general sensitization models related to size and shape, crystal defect, doped and loaded additive, and contact parameters. Moreover, major strategies for low-power gas sensors are proposed, including integrating NWs into microhotplates, self-heating operation, and designing room-temperature gas sensors. Emerging application areas of SMO-NWs-based gas sensors in disease diagnosis, environmental engineering, safety and security, flexible and wearable technology have also been studied. In the end, some insights into new challenges and future prospects for commercialization are highlighted.