Plasmonic Layer as a Localized Temperature Control Element for Surface Plasmonic Resonance-Based Sensors

Thermal degradation of optical resonances in plasmonic nanoparticles

The dependence of plasmon resonance excitations in ultrafine (3-7 nm) gold nanoparticles on heating and melting is investigated. An integrated approach is adopted, where molecular dynamics simulations of the spatial and temporal development of the atoms constituting the nanoparticles generate trajectories out of which system conformations are sampled and extracted for calculations of plasmonic excitation cross sections which then are averaged over the sample configurations for the final result. The calculations of the plasmonic excitations, which take into account the temperature- and size-dependent relaxation of the plasmons, are carried out with a newly developed Extended Discrete Interaction Model (Ex-DIM) and complemented by multilayered Mie theory. The integrated approach clearly demonstrates the conditions for suppression of the plasmons starting at temperatures well below the melting point. We have found a strong inhomogeneous dependence of the atom mobility in the particle crystal lattice increasing from the center to its surface upon the temperature growth. The plasmon resonance suppression is associated with an increase of the mobility and in the amplitude of phonon vibrations of the lattice atoms accompanied by electron-phonon scattering. This leads to an increase in the relaxation constant impeding the plasmon excitation as the major source of the suppression, while the direct contribution from the increase in the lattice constant and its chaotization at melting is found to be minor. Experimental verification of the suppression of surface plasmon resonance is demonstrated for gold nanoparticles on a quartz substrate heated up to the melting temperature and above.

Noise Improvement of a-Si Microbolometers by the Post-Metal Annealing Process

To realize high-resolution thermal images with high quality, it is essential to improve the noise characteristics of the widely adopted uncooled microbolometers. In this work, we applied the post-metal annealing (PMA) process under the condition of deuterium forming gas, at 10 atm and 300 °C for 30 min, to reduce the noise level of amorphous-Si microbolometers. Here, the DC and temperature coefficient of resistance (TCR) measurements of the devices as well as 1/f noise analysis were performed before and after the PMA treatment, while changing the width of the resistance layer of the microbolometers with 35 μm or 12 μm pixel. As a result, the microbolometers treated by the PMA process show the decrease in resistance by about 60% and the increase in TCR value up to 48.2% at 10 Hz, as compared to the reference device. Moreover, it is observed that the noise characteristics are improved in inverse proportion to the width of the resistance layer. This improvement is attributed to the cured poly-silicon grain boundary through the hydrogen passivation by heat and deuterium atoms applied during the PMA, which leads to the uniform current path inside the pixel.