Co3O4 Nanopetals on Si as Photoanodes for the Oxidation of Organics

Alloyed AuPt nanoframes loaded on h-BN nanosheets as an ingenious ultrasensitive near-infrared photoelectrochemical biosensor for accurate monitoring glucose in human tears

Photo-electro-chemical (PEC) glucose biosensor has recently attracted extensive attention due to the double advantages of both photocatalysis via photon energy utilization and electrocatalytic oxidation through extra electric field. Compared with previous shorter wavelength (violet-visible) light-induced PEC reaction, the anticipated near infrared (NIR, >~700 nm) excited PEC biosensor with multiple fascinating features should be more suitable for clinical diagnostic biology. Herein, we report an ingenious NIR-PEC biosensor by loading alloyed Au₅Pt₉ nanoframes on two dimensional (2D) hexagonal boron nitride (h-BN) nanosheets. The obtained h-BN/Au₅Pt₉ nanoframes exhibit a remarkable higher NIR-PEC activity in comparison with other as-prepared h-BN/AuPt references. The improved PEC performance is attributed to the enhanced synergetic coupling effect between Au₅Pt₉ nanoalloys and constitutionally stable h-BN that gives rise to a stronger absorbance capacity and pronounced localized surface plasmon resonance (LSPR) in visible-NIR region as well as high free-electron mobility of framework-like Au/Pt. Interestingly, the obtained h-BN/Au₅Pt₉ nanoframes excited by 808 nm NIR light provide superior PEC accuracy and sensitivity as compared to visible or other NIR light irradiation. Then, the novel 808 nm NIR-PEC biosensor was used for precise glucose monitoring in human tears with a detectable concentration of 0.03~100 μM and a low detection limit of 0.406 nM. Undoubtedly, the proposed h-BN/Au₅Pt₉ nanoframes as an appealing NIR-PEC glucose biosensor can possess greater potential values for practical glucose monitoring in biomedicine.

Work Function Tuning in Hydrothermally Synthesized Vanadium-Doped MoO3 and Co3O4 Mesostructures for Energy Conversion Devices

The wide interest in developing green energy technologies stimulates the scientific community to seek, for devices, new substitute material platforms with a low environmental impact, ease of production and processing and long-term stability. The synthesis of metal oxide (MO) semiconductors fulfils these requirements and efforts are addressed towards optimizing their functional properties through the improvement of charge mobility or energy level alignment. Two MOs have rising perspectives for application in light harvesting devices, mainly for the role of charge selective layers but also as light absorbers, namely MoO3 (an electron blocking layer) and Co3O4 (a small band gap semiconductor). The need to achieve better charge transport has prompted us to explore strategies for the doping of MoO3 and Co3O4 with vanadium (V) ions that, when combined with oxygen in V2O5, produce a high work function MO. We report on subcritical hydrothermal synthesis of V-doped mesostructures of MoO3 and of Co3O4, in which a tight control of the doping is exerted by tuning the relative amounts of reactants. We accomplished a full analytical characterization of these V-doped MOs that unambiguously demonstrates the incorporation of the vanadium ions in the host material, as well as the effects on the optical properties and work function. We foresee a promising future use of these materials as charge selective materials in energy devices based on multilayer structures.

Stability of Non-Flexible vs. Flexible Inverted Bulk-Heterojunction Organic Solar Cells with ZnO as Electron Transport Layer Prepared by a Sol-Gel Spin Coating Method

In this research, inverted bulk heterojunction organic solar cells (BHJ OSC) with poly(3-hexylthiophene-2,5-diyl): (6,6)-phenyl C61 butyric acid methyl (P3HT:PCBM) as the active layer were fabricated by a sol-gel spin coating method using flexible PET and non-flexible glass as substrates. The power conversion efficiency (PCE) and the stability of the cells were investigated. According to the results, the non-flexible device showed higher short circuit current (Jsc) as well as open-circuit voltage (Voc) as compared to the flexible one so that 2.52% and 0.67% PCE for non-flexible and flexible cells were obtained, respectively. From the stability point of view, the non-flexible device maintained 51% of its initial efficiency after six weeks in a dark atmosphere, while it was about 19% for the flexible cell after four weeks. The most important reason for the higher PCE with the higher stability in the non-flexible cell can be attributed to its higher shunt resistance (Rsh) and better interlayer connections at the electron collector side.