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Han S, Liu J, Pérez-Jiménez AI, Lei Z, Yan P, Zhang Y, Guo X, Bai R, Hu S, Wu X, Zhang DW, Sun Q, Akinwande D, Yu ET, Ji L. Visualizing and Controlling of Photogenerated Electron-Hole Pair Separation in Monolayer WS 2 Nanobubbles under Piezoelectric Field. ACS APPLIED MATERIALS & INTERFACES 2024; 16:36735-36744. [PMID: 38952105 DOI: 10.1021/acsami.4c00092] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/03/2024]
Abstract
The piezoelectric properties of two-dimensional semiconductor nanobubbles present remarkable potential for application in flexible optoelectronic devices, and the piezoelectric field has emerged as an efficacious pathway for both the separation and migration of photogenerated electron-hole pairs, along with inhibition of recombination. However, the comprehension and control of photogenerated carrier dynamics within nanobubbles still remain inadequate. Hence, this study is dedicated to underscore the importance of in situ detection and detailed characterization of photogenerated electron-hole pairs in nanobubbles to enrich understanding and strategic manipulation in two-dimensional semiconductor materials. Utilizing frequency modulation kelvin probe force microscopy (FM-KPFM) and strain gradient distribution techniques, the existence of a piezoelectric field in monolayer WS2 nanobubbles was confirmed. Combining w/o and with illumination FM-KPFM, second-order capacitance gradient technique and in situ nanoscale tip-enhanced photoluminescence characterization techniques, the interrelationships among the piezoelectric effect, interlayer carrier transfer, and the funneling effect for photocarrier dynamics process across various nanobubble sizes were revealed. Notably, for a WS2/graphene bubble height of 15.45 nm, a 0 mV surface potential difference was recorded in the bubble region w/o and with illumination, indicating a mutual offset of piezoelectric effect, interlayer carrier transfer, and the funneling effect. This phenomenon is prevalent in transition metal dichalcogenides materials exhibiting inversion symmetry breaking. The implication of our study is profound for advancing the understanding of the dynamics of photogenerated electron-hole pair in nonuniform strain piezoelectric systems, and offers a reliable framework for the separation and modulation of photogenerated electron-hole pair in flexible optoelectronic devices and photocatalytic applications.
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Affiliation(s)
- Sheng Han
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Jiong Liu
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Ana I Pérez-Jiménez
- Technology Innovation Institute, 9639, Masdar City, Abu Dhabi, United Arab Emirates
| | - Zhou Lei
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Pei Yan
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Yu Zhang
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Xiangyu Guo
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Rongxu Bai
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Shen Hu
- School of Microelectronics, Fudan University, Shanghai 200433, China
- Jiashan Fudan Institute, Jiaxing 314110, China
| | - Xuefeng Wu
- School of Microelectronics, Fudan University, Shanghai 200433, China
- Shanghai Integrated Circuit Manufacturing Innovation Center, Shanghai 201210, China
| | - David W Zhang
- School of Microelectronics, Fudan University, Shanghai 200433, China
- Shanghai Integrated Circuit Manufacturing Innovation Center, Shanghai 201210, China
- Jiashan Fudan Institute, Jiaxing 314110, China
- Hubei Yangtze Memory Laboratories, Wuhan 430205, China
| | - Qingqing Sun
- School of Microelectronics, Fudan University, Shanghai 200433, China
- Shanghai Integrated Circuit Manufacturing Innovation Center, Shanghai 201210, China
- Jiashan Fudan Institute, Jiaxing 314110, China
| | - Deji Akinwande
- Microelectronic Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin 78758, United States
| | - Edward T Yu
- Microelectronic Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin 78758, United States
| | - Li Ji
- School of Microelectronics, Fudan University, Shanghai 200433, China
- Shanghai Integrated Circuit Manufacturing Innovation Center, Shanghai 201210, China
- Jiashan Fudan Institute, Jiaxing 314110, China
- Hubei Yangtze Memory Laboratories, Wuhan 430205, China
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Schulpen JJM, Lam CHX, Dawley RA, Li R, Jin L, Ma T, Kessels WMM, Koester SJ, Bol AA. Nb Doping and Alloying of 2D WS 2 by Atomic Layer Deposition for 2D Transition Metal Dichalcogenide Transistors and HER Electrocatalysts. ACS APPLIED NANO MATERIALS 2024; 7:7395-7407. [PMID: 38633297 PMCID: PMC11019465 DOI: 10.1021/acsanm.4c00094] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/05/2024] [Revised: 03/06/2024] [Accepted: 03/14/2024] [Indexed: 04/19/2024]
Abstract
We utilize plasma-enhanced atomic layer deposition to synthesize two-dimensional Nb-doped WS2 and NbxW1-xSy alloys to expand the range of properties and improve the performance of 2D transition metal dichalcogenides for electronics and catalysis. Using a supercycle deposition process, films are prepared with compositions spanning the range from WS2 to NbS3. While the W-rich films form crystalline disulfides, the Nb-rich films form amorphous trisulfides. Through tuning the composition of the films, the electrical resistivity is reduced by 4 orders of magnitude compared to pure ALD-grown WS2. To produce Nb-doped WS2 films, we developed a separate ABC-type supercycle process in which a W precursor pulse precedes the Nb precursor pulse, thereby reducing the minimum Nb content of the film by a factor of 3 while maintaining a uniform distribution of the Nb dopant. Initial results are presented on the electrical and electrocatalytic performances of the films. Promisingly, the NbxW1-xSy films of 10 nm thickness and composition x ≈ 0.08 are p-type semiconductors and have a low contact resistivity of (8 ± 1) × 102 Ω cm to Pd/Au contacts, demonstrating their potential use in contact engineering of 2D TMD transistors.
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Affiliation(s)
- Jeff J.
P. M. Schulpen
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, Eindhoven 5600 MB, The Netherlands
| | - Cindy H. X. Lam
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, Eindhoven 5600 MB, The Netherlands
| | - Rebecca A. Dawley
- Department
of Chemistry, University of Michigan, 930 N. University Avenue, Ann Arbor, Michigan 48109, United States
| | - Ruixue Li
- Department
of Electrical and Computer Engineering, University of Minnesota, 200 Union Street Se, Minneapolis, Minnesota 55455, United States
| | - Lun Jin
- Department
of Electrical and Computer Engineering, University of Minnesota, 200 Union Street Se, Minneapolis, Minnesota 55455, United States
| | - Tao Ma
- Michigan
Center for Materials Characterization, University
of Michigan, 2800 Plymouth Road, Ann Arbor, Michigan 48109, United States
| | - Wilhelmus M. M. Kessels
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, Eindhoven 5600 MB, The Netherlands
| | - Steven J. Koester
- Department
of Electrical and Computer Engineering, University of Minnesota, 200 Union Street Se, Minneapolis, Minnesota 55455, United States
| | - Ageeth A. Bol
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, Eindhoven 5600 MB, The Netherlands
- Department
of Chemistry, University of Michigan, 930 N. University Avenue, Ann Arbor, Michigan 48109, United States
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3
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Zhu J, Hu S, Chen B, Zhang Y, Wei S, Guo X, Zou X, Lu X, Sun Q, Zhang DW, Ji L. Tunable-performance all-oxide structure field-effect transistor based atomic layer deposited Hf-doped In2O3 thin films. J Chem Phys 2023; 159:174704. [PMID: 37916595 DOI: 10.1063/5.0170886] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/05/2023] [Accepted: 10/16/2023] [Indexed: 11/03/2023] Open
Abstract
The relocation of peripheral transistors from the front-end-of-line (FEOL) to the back-end-of-line (BEOL) in fabrication processes is of significant interest, as it allows for the introduction of novel functionality in the BEOL while providing additional die area in the FEOL. Oxide semiconductor-based transistors serve as attractive candidates for BEOL. Within these categories, In2O3 material is particularly notable; nonetheless, the excessive intrinsic carrier concentration poses a limitation on its broader applicability. Herein, the deposition of Hf-doped In2O3 (IHO) films via atomic layer deposition for the first time demonstrates an effective method for tuning the intrinsic carrier concentration, where the doping concentration plays a critical role in determine the properties of IHO films and all-oxide structure transistors with Au-free process. The all-oxide transistors with In2O3: HfO2 ratio of 10:1 exhibited optimal electrical properties, including high on-current with 249 µA, field-effect mobility of 13.4 cm2 V-1 s-1, and on/off ratio exceeding 106, and also achieved excellent stability under long time positive bias stress and negative bias stress. These findings suggest that this study not only introduces a straightforward and efficient approach to improve the properties of In2O3 material and transistors, but as well paves the way for development of all-oxide transistors and their integration into BEOL technology.
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Affiliation(s)
- Jiyuan Zhu
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Shen Hu
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Bojia Chen
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Yu Zhang
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Shice Wei
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Xiangyu Guo
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Xingli Zou
- State Key Laboratory of Advanced Special Steel and Shanghai Key Laboratory of Advanced Ferrometallurgy and School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Xionggang Lu
- State Key Laboratory of Advanced Special Steel and Shanghai Key Laboratory of Advanced Ferrometallurgy and School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Qingqing Sun
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - David W Zhang
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Li Ji
- School of Microelectronics, Fudan University, Shanghai 200433, China
- Hubei Yangtz Memory Laboratories, Wuhan 430205, China
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4
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Guo X, Yang H, Mo X, Bai R, Wang Y, Han Q, Han S, Sun Q, Zhang DW, Hu S, Ji L. Modulated wafer-scale WS 2 films based on atomic-layer-deposition for various device applications. RSC Adv 2023; 13:14841-14848. [PMID: 37197184 PMCID: PMC10184003 DOI: 10.1039/d3ra00933e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/11/2023] [Accepted: 05/09/2023] [Indexed: 05/19/2023] Open
Abstract
Tungsten disulfide (WS2) is promising for potential applications in transistors and gas sensors due to its high mobility and high adsorption of gas molecules onto edge sites. This work comprehensively studied the deposition temperature, growth mechanism, annealing conditions, and Nb doping of WS2 to prepare high-quality wafer-scale N- and P-type WS2 films by atomic layer deposition (ALD). It shows that the deposition and annealing temperature greatly influence the electronic properties and crystallinity of WS2, and insufficient annealing will seriously reduce the switch ratio and on-state current of the field effect transistors (FETs). Besides, the morphologies and carrier types of WS2 films can be controlled by adjusting the processes of ALD. The obtained WS2 films and the films with vertical structures were used to fabricate FETs and gas sensors, respectively. Among them, the Ion/Ioff ratio of N- and P-type WS2 FETs is 105 and 102, respectively, and the response of N- and P-type gas sensors is 14% and 42% under 50 ppm NH3 at room temperature, respectively. We have successfully demonstrated a controllable ALD process to modify the morphology and doping behavior of WS2 films with various device functionalities based on acquisitive characteristics.
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Affiliation(s)
- Xiangyu Guo
- School of Microelectronics, Fudan University Shanghai 200433 China
| | - Hanjie Yang
- School of Microelectronics, Fudan University Shanghai 200433 China
| | - Xichao Mo
- School of Physical Science and Technology, Lanzhou University Lanzhou 730000 China
| | - Rongxu Bai
- School of Microelectronics, Fudan University Shanghai 200433 China
| | - Yanrong Wang
- School of Physical Science and Technology, Lanzhou University Lanzhou 730000 China
| | - Qi Han
- School of Microelectronics, Fudan University Shanghai 200433 China
| | - Sheng Han
- School of Microelectronics, Fudan University Shanghai 200433 China
| | - Qingqing Sun
- School of Microelectronics, Fudan University Shanghai 200433 China
| | - David W Zhang
- School of Microelectronics, Fudan University Shanghai 200433 China
| | - Shen Hu
- School of Microelectronics, Fudan University Shanghai 200433 China
- Jiashan Fudan Institute Jiashan 314100 China
| | - Li Ji
- School of Microelectronics, Fudan University Shanghai 200433 China
- Hubei Yangtz Memory Laboratories Wuhan 430205 China
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