Effect of channel length on the electrical response of carbon nanotube field-effect transistors to deoxyribonucleic acid hybridization

Mechanical Characterisation of Single-Walled Carbon Nanotube Heterojunctions: Numerical Simulation Study

The elastic properties of single-walled carbon nanotube heterojunctions were investigated using conventional tensile, bending and torsion tests. A three-dimensional finite element model was built in order to describe the elastic behaviour of cone heterojunctions (armchair-armchair and zigzag-zigzag). This comprehensive systematic study, to evaluate the tensile, bending and torsional rigidities of heterojunctions, enabled the formulation analytical methods for easy assessment of the elastic properties of heterojunctions using a wide range of their geometrical parameters.

Single-Step Selective Laser Writing of Flexible Photodetectors for Wearable Optoelectronics

The increasing demand for wearable optoelectronics in biomedicine, prosthetics, and soft robotics calls for innovative and transformative technologies that permit facile fabrication of compact and flexible photodetectors with high performance. Herein, by developing a single-step selective laser writing strategy that can finely tailor material properties through incident photon density control and lead to the formation of hierarchical hybrid nanocomposites, e.g., reduced graphene oxide (rGO)-zinc oxide (ZnO), a highly flexible and all rGO-ZnO hybrid-based photodetector is successfully constructed. The device features 3D ultraporous hybrid films with high photoresponsivity as the active detection layer, and hybrid nanoflakes with superior electrical conductivity as interdigitated electrodes. Benefitting from enhanced photocarrier generation because of the ultraporous film morphology, efficient separation of electron-hole pairs at rGO-ZnO heterojunctions, and fast electron transport by highly conductive rGO nanosheets, the photodetector exhibits high, linear, and reproducible responsivities to a wide range of ultraviolet (UV) intensities. Furthermore, the excellent mechanical flexibility and robustness enable the photodetector to be conformally attached to skin, thus intimately monitoring the exposure dosage of human body to UV light for skin disease prevention. This study advances the fabrication of flexible optoelectronic devices with reduced complexity, facilitating the integration of wearable optoelectronics and epidermal systems.

Simplified detection of the hybridized DNA using a graphene field effect transistor

Detection of disease-related gene expression by DNA hybridization is a useful diagnostic method. In this study a monolayer graphene field effect transistor (GFET) was fabricated for the detection of a particular single-stranded DNA (target DNA). The probe DNA, which is a single-stranded DNA with a complementary nucleotide sequence, was directly immobilized onto the graphene surface without any linker. The V_Dirac was shifted to the negative direction in the probe DNA immobilization. A further shift of V_Dirac in the negative direction was observed when the target DNA was applied to GFET, but no shift was observed upon the application of non-complementary mismatched DNA. Direct immobilization of double-stranded DNA onto the graphene surface also shifted the V_Dirac in the negative direction to the same extent as that of the shift induced by the immobilization of probe DNA and following target DNA application. These results suggest that the further shift of V_Dirac after application of the target DNA to the GFET was caused by the hybridization between the probe DNA and target DNA.

Direct Preparation of Carbon Nanotube Intramolecular Junctions on Structured Substrates

Leveraging the unique properties of single-walled carbon nanotube (SWNT) intramolecular junctions (IMJs) in innovative nanodevices and next-generation nanoelectronics requires controllable, repeatable, and large-scale preparation, together with rapid identification and comprehensive characterization of such structures. Here we demonstrate SWNT IMJs through directly growing ultralong SWNTs on trenched substrates. It is found that the trench configurations introduce axial strain in partially suspended nanotubes, and promote bending deformation in the vicinity of the trench edges. As a result, the lattice and electronic structure of the nanotubes can be locally modified, to form IMJs in the deformation regions. The trench patterns also enable pre-defining the formation locations of SWNT IMJs, facilitating the rapid identification. Elaborate Raman characterization has verified the formation of SWNT IMJs and identified their types. Rectifying behavior has been observed by electrical measurements on the as-prepared semiconducting-semiconducting (S-S) junction.