Can molecular projected density of states (PDOS) be systematically used in electronic conductance analysis?

Generalized Substrate Screening GW for Covalently Bonded Interfaces

An accurate description of the interfacial quasiparticle electronic structure is key to the design of heterogeneous materials. While the first-principles GW approach is state-of-the-art, the computational cost is high for large interface systems. This has led to the substrate screening GW approach for weakly coupled interfaces, which breaks down for covalently bonded interfaces. In this work, we present the generalized substrate screening GW approach, based on the following two considerations: (i) the contribution of the interfacial covalent bond to the polarizability can be efficiently calculated with a low energy cutoff; (ii) the contribution of the deprotonated adsorbate to the interface polarizability can be well approximated by that of the protonated molecule. Our approach is exemplified using interfaces formed between benzene-1,4-dithiol (BDT) and Au(111), which feature the widely used Au-S bonds in experiments. Our work provides a robust and simple scheme for accurate and efficient GW calculations of covalently bonded interfaces.

Probing into the conduction band and type of carriers/traps on red/orange persistent phosphors in vacancy & solid-solution induced (Sr/Ba)1-xCaxGe4-yO9:Mn2

Long-wavelength afterglow has been a key issue in the investigation of afterglow materials. Herein, the orange/red (Sr/Ba)1-xCaxGe4-yO9:0.01Mn2+ is prepared by the introduction of vacancy induction and solid solution. The (Sr/Ba)Ge4O9:Mn2+ hardly possesses an afterglow phenomenon and exhibits only red/orange photo-luminescence (PL) attributed to the d-d transition of Mn2+, while samples with reduction of the Ge4+ content and with replacement by Ca2+ show bright afterglow emission with the peak located at about 612 nm/620 nm. The emerging broadband peak comes from charge transfer involving Mn2+ and nearby defect clusters and the bottom of the conduction band (CB). The introduction of V''''Ge creates a defective energy level above the valence band, but the ground state energy difference with Mn2+ is too large (>1 eV) to allow hole transfer, which was confirmed by ultraviolet photoelectron spectroscopy (UPS), spherical aberration-corrected transmission electron microscopy (AC-STEM), charge differential density (CDD) analysis, electron paramagnetic resonance (EPR) analysis, etc. With this achievement, we propose an original design strategy for long-wavelength afterglow and a more reasonable afterglow mechanism, which is of great importance for the investigation of long-wavelength afterglow materials.

A comparison of CO oxidation on cleaned ZnO [Formula: see text] surface and defective ZnO [Formula: see text] surface using density functional theory studies

In this work, we employed continuously the DFT calculations to study CO oxidation reaction on the defective ZnO [Formula: see text] surface. The oxygen (O) atom was removed from cleaned surface ZnO [Formula: see text] (CS-ZnO) to form the defective ZnO [Formula: see text] surface (DS-ZnO), which contained an O vacancy defect. Hereafter, the formation of oxygen vacancy was found to increase the adsorption abilities of O₂ and CO on DS-ZnO, in comparison to those on CS-ZnO. Many steps of elementary reactions including O₂ and CO adsorption, reacting between CO and O to form CO₂, and CO₂ desorption on DS-ZnO were investigated and calculated in terms of the configurations, activation energy, and reaction energy, to which the reaction pathway of CO oxidation has been found. Based on this pathway, the calculation results of the rate controlling step of 0.84 eV corresponding to the exothermic reaction energy of 4.11 eV on DS-ZnO indicated that the CO oxidation on DS-ZnO was more thermodynamically favorable and less kinetically desirable than that on CS-ZnO. In addition, the natural bonds of O₂ and CO adsorptions on DS-ZnO were also analyzed by the partial density of state (PDOS) and the electron density difference (EDD) contour plots.