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Salazar R, Bayona-Roa C, Téllez G. Monte Carlo simulations of two-component Coulomb gases applied in surface electrodes. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:144007. [PMID: 35021155 DOI: 10.1088/1361-648x/ac4aa8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2021] [Accepted: 01/12/2022] [Indexed: 06/14/2023]
Abstract
In this work, we study the gapped surface electrode (SE), a planar system composed of two-conductor flat regions at different potentials with a gapGbetween both sheets. The computation of the electric field and the surface charge density requires solving Laplace's equation subjected to Dirichlet conditions (on the electrodes) and Neumann boundary conditions over the gap. In this document, the gapless surface electrode is modeled as a two-dimensional classical Coulomb gas having punctual charges +qand -qon the inner and outer electrodes, respectively, interacting with an inverse power law 1/r-potential. The coupling parameter Γ between particles inversely depends on temperature and is proportional toq2. Precisely, the density charge arises from the equilibrium states via Monte Carlo (MC) simulations. We focus on the coupling and the gap geometry effect. Mainly on the distribution of particles in the circular and the harmonically-deformed gapped SE. MC simulations differ from electrostatics in the strong coupling regime. The electrostatic approximation and the MC simulations agree in the weak coupling regime where the system behaves as two interacting ionic fluids. That means that temperature is crucial in finite-size versions of the gapped SE where the density charge cannot be assumed fully continuous as the coupling among particles increases. Numerical comparisons are addressed against analytical descriptions based on an electric vector potential approach, finding good agreement.
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Affiliation(s)
| | - Camilo Bayona-Roa
- Centro de Ingeniería Avanzada Investigación y Desarrollo (CIAID), Bogotá, Colombia
- Unidad de investigación, Desarrollo e Innovación, Robotclean sas, Bogotá, Colombia
| | - Gabriel Téllez
- Departamento de Física, Universidad de los Andes, Bogotá, Colombia
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Park Y, Jung C, Seong M, Lee M, Cho DD, Kim T. A New Measurement Method for High Voltages Applied to an Ion Trap Generated by an RF Resonator. SENSORS 2021; 21:s21041143. [PMID: 33562053 PMCID: PMC7914741 DOI: 10.3390/s21041143] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/18/2020] [Revised: 01/18/2021] [Accepted: 02/04/2021] [Indexed: 11/25/2022]
Abstract
A new method is proposed to measure unknown amplitudes of radio frequency (RF) voltages applied to ion traps, using a pre-calibrated voltage divider with RF shielding. In contrast to previous approaches that estimate the applied voltage by comparing the measured secular frequencies with a numerical simulation, we propose using a pre-calibrated voltage divider to determine the absolute amplitude of large RF voltages amplified by a helical resonator. The proposed method does not require measurement of secular frequencies and completely removes uncertainty caused by limitations of numerical simulations. To experimentally demonstrate our method, we first obtained a functional relation between measured secular frequencies and large amplitudes of RF voltages using the calibrated voltage divider. A comparison of measured relations and simulation results without any fitting parameters confirmed the validity of the proposed method. Our method can be applied to most ion trap experiments. In particular, it will be an essential tool for surface ion traps which are extremely vulnerable to unknown large RF voltages and for improving the accuracy of numerical simulations for ion trap experiments.
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Affiliation(s)
- Yunjae Park
- Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Korea; (Y.P.); (C.J.); (M.L.); (D.D.C.)
- Automation and Systems Research Institute, Seoul National University, Seoul 08826, Korea
- Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Korea
| | - Changhyun Jung
- Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Korea; (Y.P.); (C.J.); (M.L.); (D.D.C.)
- Automation and Systems Research Institute, Seoul National University, Seoul 08826, Korea
- Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Korea
| | - Myeongseok Seong
- Department of Mechanical Engineering, Seoul National University, Seoul 08826, Korea;
| | - Minjae Lee
- Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Korea; (Y.P.); (C.J.); (M.L.); (D.D.C.)
- Automation and Systems Research Institute, Seoul National University, Seoul 08826, Korea
- Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Korea
| | - Dongil Dan Cho
- Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Korea; (Y.P.); (C.J.); (M.L.); (D.D.C.)
- Automation and Systems Research Institute, Seoul National University, Seoul 08826, Korea
- Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Korea
| | - Taehyun Kim
- Automation and Systems Research Institute, Seoul National University, Seoul 08826, Korea
- Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Korea
- Department of Computer Science and Engineering, Seoul National University, Seoul 08826, Korea
- Institute of Computer Technology, Seoul National University, Seoul 08826, Korea
- Correspondence: ; Tel.: +82-2-880-1725
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