Design and Simulation of MEMS Based Piezoelectric Shear Actuated Beam

Proposal for an electrostrictive logic device with the epitaxial oxide heterostructure

The possible use of electrostrictive materials for information processing devices has been widely discussed because it could allow low-power logic operation by overcoming the fundamental limit of subthreshold swing greater than 60 mV/decade in conventional MOSFETs. However, existing proposals for electrostrictive FET applications typically adopt approaches that are entirely theoretical and simulative, thus lacking practical insights into how an electrostrictive material can be best interfaced with a channel material. Here we propose an electrostrictive FET device, involving the epitaxial oxide heterostructure as an ideal material platform for maximum strain transfer. The ON/OFF switching occurs due to a stress-induced concentration change of oxygen vacancies in the memristive oxide channel layer. Based on finite-element simulations, we show that the application of a minimal gate voltage bias can induce stress in the channel layer as high as 10⁸ N/m² owing to the epitaxial interface between the electrostrictive and memristive oxide layers. Conductive AFM experiments further support the feasibility of the proposed device by demonstrating the stress-induced conductivity modulation of a perovskite oxide thin film, SrTiO₃, that is well known to serve as the substrate for epitaxial growth of other functional oxide layers.

Piezoelectric Sensor using PZT Material for Partial Discharge Detection on Power Transformer

This paper presents an analysis of acoustic emission (AE) detection technique for partial discharge (PD) on power transformer using piezoelectric sensor. The AE PD detection technique using piezoelectric material is one of the popular method due to its low cost and compact size. A matching resonant frequency of AE sensor with PD signal which in range 10 kHz to 300 kHz is an important factor for this technique. An AE sensor that have a resonant frequency match with PD signal able to give an optimal performances. Therefore, a simulation on different dimensions of lead zirconate titanate (PZT) AE sensor using finite element method (FEM) is conducted in order to determine the performances in terms of resonant frequency, total displacement and generated voltage. The length of AE sensor is varied from 2 mm to 30 mm in order to reveal the influence of length dimension against generated voltage. Based on the obtained results, that 2 mm length of AE sensor able to generate voltage of 3.01 x10−5 mV at resonant frequency of 113.58 kHz which can be proposed toward PD detection on the power transformer.