Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs

Spectral supralinearity prediction of silicon photodiodes in the near-infrared range

A model describing spectral supralinearity for a silicon photodiode in the near-infrared region is presented. This theoretical model is based on the internal quantum efficiency model of the photodiode using Shockley-Read-Hall recombination, which depends on the inner structure parameters of the photodiodes. Comparing the experimental results with the theoretical calculation results, the model enables us to quantitatively predict the starting power level, shape, and wavelength dependence of the supralinearity for a silicon photodiode. This model contributes to high-accuracy measurements over wide optical power ranges and various incident wavelengths.

Interpolation of the spectral responsivity of silicon photodetectors in the near ultraviolet

We improve the methods used to interpolate the responsivity of unbiased silicon photodetectors in the near-ultraviolet region. This improvement is achieved by the derivation of an interpolation function for the quantum yield of silicon and by consideration of this function in the interpolation of the internal quantum efficiency of photodiodes. The calculated quantum-yield and spectral-responsivity values are compared with measurement results obtained by the study of a silicon trap detector and with values reported by other research groups. The comparisons show agreement with a standard deviation of 0.4% between our measured and modeled values for both the quantum yield and the spectral responsivity within the wavelength region from 260 to 400 nm. The proposed methods thus extend the predictability of the spectral responsivity of silicon photodetectors to the wavelength region from 260 to 950 nm. Furthermore, an explanation is proposed for the change in the spectral responsivity of silicon photodiodes that is due to UV radiation. In our improved quantum efficiency model the spectral change can be accounted for completely by the adjustment of just one parameter, i.e., the collection efficiency near the SiO(2)/Si interface.

Ultraviolet radiometry with synchrotron radiation and cryogenic radiometry

The combination of a cryogenic radiometer and synchrotron radiation enables detector scale realization in spectral regions that are otherwise difficult to access. Cryogenic radiometry is the most accurate primary detector-based standard available to date, and synchrotron radiation gives a unique broadband and continuous spectrum that extends from x ray to far IR. We describe a new cryogenic radiometer-based UV radiometry facility at the Synchrotron Ultraviolet Radiation Facility II at the National Institute of Standards and Technology. The facility is designed to perform a variety of detector and optical materials characterizations. The facility combines a high-throughput, normal incidence monochromator with an absolute cryogenic radiometer optimized for UV measurements to provide absolute radiometric measurements in the spectral range from 125 nm to approximately 320 nm. We discuss results on photodetector characterizations, including absolute spectroradiometric calibration, spatial responsivity mapping, spectroreflectance, and internal quantum efficiency. In addition, such characterizations are used to study UV radiation damage in photodetectors that can shed light on the mechanism of the damage process. Examples are also given for UV optical materials characterization.

Realization of a scale of absolute spectral response using the National Institute of Standards and Technology high-accuracy cryogenic radiometer

Using the National Institute of Standards and Technology high-accuracy cryogenic radiometer (HACR), we have realized a scale of absolute spectral response between 406 and 920 nm. The HACR, an electrical-substitution radiometer operating at cryogenic temperatures, achieves a combined relative standard uncertainty of 0.021%. Silicon photodiode light-trapping detectors were calibrated against the HACR with a typical relative standard uncertainty of 0.03% at nine laser wavelengths between 406 and 920 nm. Modeling of the quantum efficiency of these detectors yields their responsivity throughout this range with comparable accuracy.