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Hu M, Yu J, Chen Y, Wang S, Dong B, Wang H, He Y, Ma Y, Zhuge F, Zhai T. A non-linear two-dimensional float gate transistor as a lateral inhibitory synapse for retinal early visual processing. MATERIALS HORIZONS 2022; 9:2335-2344. [PMID: 35820170 DOI: 10.1039/d2mh00466f] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Synaptic transistors that accommodate concurrent signal transmission and learning in a neural network are attracting enormous interest for neuromorphic sensory processing. To remove redundant sensory information while keeping important features, artificial synaptic transistors with non-linear conductance are desired to apply filter processing to sensory inputs. Here, we report the realization of non-linear synapses using a two-dimensional van der Waals (vdW) heterostructure (MoS2/h-BN/graphene) based float gate memory device, in which the semiconductor channel is tailored via a surface acceptor (ZnPc) for subthreshold operation. In addition to usual synaptic plasticity, the memory device exhibits highly non-linear conductance (rectification ratio >106), allowing bidirectional yet only negative/inhibitory current to pass through. We demonstrate that in a lateral coupling network, such a float gate memory device resembles the key lateral inhibition function of horizontal cells for the formation of an ON-center/OFF-surround receptive field. When combined with synaptic plasticity, the lateral inhibition weights are further tunable to enable adjustable edge enhancement for early visual processing. Our results here hopefully open a new scheme toward early sensory perception via lateral inhibitory synaptic transistors.
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Affiliation(s)
- Man Hu
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China.
| | - Jun Yu
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China.
| | - Yangyang Chen
- School of optoelectronic and information, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
| | - Siqi Wang
- School of optoelectronic and information, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
| | - Boyi Dong
- School of optoelectronic and information, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
| | - Han Wang
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China.
| | - Yuhui He
- School of optoelectronic and information, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
| | - Ying Ma
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China.
| | - Fuwei Zhuge
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China.
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China.
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