Polarization-state-resolved high-harmonic spectroscopy of solids

Attosecond metrology sensitive to sub-optical-cycle electronic and structural dynamics is opening up new avenues for ultrafast spectroscopy of condensed matter. Using intense lightwaves to precisely control the fast carrier dynamics in crystals holds great promise for next-generation petahertz electronics and devices. The carrier dynamics can produce high-order harmonics of the driving field extending up into the extreme-ultraviolet region. Here, we introduce polarization-state-resolved high-harmonic spectroscopy of solids, which provides deeper insights into both electronic and structural sub-cycle dynamics. Performing high-harmonic generation measurements from silicon and quartz, we demonstrate that the polarization states of the harmonics are not only determined by crystal symmetries, but can be dynamically controlled, as a consequence of the intertwined interband and intraband electronic dynamics. We exploit this symmetry-dynamics duality to efficiently generate coherent circularly polarized harmonics from elliptically polarized pulses. Our experimental results are supported by ab-initio simulations, providing evidence for the microscopic origin of the phenomenon.

High-harmonic generation in solids is related to the carrier dynamics and can be used to probe dynamic processes. Here, Klemke et al. show that the polarization states of high harmonics generated from silicon and quartz are determined by the crystal symmetries but can also be dynamically controlled.

Cascaded interactions mediated by terahertz radiation

We investigate a regime of parametric amplification in which the pump and signal waves are spectrally separated by only a few hundreds of GHz frequency - therefore resulting in a sub-THz frequency idler wave. Operating in this regime we find an optical parametric amplifier (OPA) behavior which is highly dissimilar to conventional OPAs. In this regime, we observe multiple three-wave mixing processes occurring simultaneously which results in spectral cascading around the pump and signal wave. Via numerical simulations, we elucidate the processes at work and show that cascaded optical parametric amplification offers a pathway toward THz-wave generation beyond the Manly-Rowe limit and toward the generation of high-energy, sparse frequency-combs.

Highly stable ultrabroadband mid-IR optical parametric chirped-pulse amplifier optimized for superfluorescence suppression

We present a 9 GW peak power, three-cycle, 2.2 microm optical parametric chirped-pulse amplification source with 1.5% rms energy and 150 mrad carrier envelope phase fluctuations. These characteristics, in addition to excellent beam, wavefront, and pulse quality, make the source suitable for long-wavelength-driven high-harmonic generation. High stability is achieved by careful optimization of superfluorescence suppression, enabling energy scaling.

Scalable Yb-MOPA-driven carrier-envelope phase-stable few-cycle parametric amplifier at 1.5 microm

Carrier-envelope phase-stable 4 microJ pulses at approximately 1.5 microm are obtained from a femtosecond Yb:KGW-MOPA-pumped two-stage optical parametric amplifier. This novel technology represents a highly attractive alternative to traditional Ti:sapphire front-ends for seeding multimillijoule-level optical parametric chirped-pulse amplifiers. For this task, we demonstrate stretching of the OPA output to approximately 40 ps and recompression to 33 fs pulse duration. As a stand-alone system, our tunable two-stage OPA might find numerous applications in time-resolved spectroscopy and micromachining.

Experimental implementation of optical clockwork without carrier-envelope phase control

We demonstrate optical clockwork without the need for carrier-envelope phase control by use of sum-frequency generation between a continuous-wave optical parametric oscillator at 3.39 microm and a femtosecond mode-locked Ti:sapphire laser with two strong spectral peaks at 834 and 670 nm, a spectral difference matched by the 3.39-microm radiation.

Light-induced gaps in semiconductor band-to-band transitions

We observe a triplet around the third harmonic of the semiconductor band gap when exciting 50-100 nm thin GaAs films with 5 fs pulses at 3 x 10(12) W/cm(2). The comparison with solutions of the semiconductor Bloch equations allows us to interpret the observed peak structure as being due to a two-band Mollow triplet. This triplet in the optical spectrum is a result of light-induced gaps in the band structure, which arise from coherent band mixing. The theory is formulated for full tight-binding bands and uses no rotating-wave approximation.

Evidence for third-harmonic generation in disguise of second-harmonic generation in extreme nonlinear optics

In contrast with traditional nonlinear optics, a peak at the spectral position of the second harmonic of a laser can also be generated in an inversion-symmetric medium in the regime of extreme nonlinear optics. We describe the underlying mechanism of such third-harmonic generation in disguise of second-harmonic generation and compare theory with the optical as well as the radio-frequency spectra measured in recent experiments on thin ZnO films. The peak at twice the carrier-envelope offset frequency in the radio-frequency spectra is shown to be an unambiguous signature of such a process.

Determining the carrier-envelope offset frequency of 5-fs pulses with extreme nonlinear optics in ZnO

We excite ZnO samples with two-cycle optical pulses directly from a mode-locked oscillator with average powers of several tens of milliwatts. The emitted light reveals peaks at the carrier-envelope offset frequency f(ø) and at 2f(ø) in the radio-frequency spectra. These peaks can still be detected in layers as thin as 350 nm-a step toward determining the carrier-envelope offset phase itself.

Role of the carrier-envelope offset phase of few-cycle pulses in nonperturbative resonant nonlinear optics

We study the influence of the carrier-envelope offset phase of few-cycle pulses on nonperturbative resonant extreme nonlinear optics in a semiconductor. If the Rabi frequency becomes comparable to the light frequency, the different Rabi sidebands interfere around twice the laser center frequency, giving rise to a signal which strongly depends on the carrier-envelope offset phase. This signature should be measurable in GaAs samples.

Signatures of carrier-wave Rabi flopping in GaAs

For excitation of the model semiconductor GaAs with optical pulses which are both extremely short ( 5 fs) and extremely intense ( approximately 10(12) W cm(-2)), we can meet the condition that the Rabi frequency becomes comparable to the band gap frequency-a highly unusual and previously inaccessible situation. Specifically, in this regime, we observe carrier-wave Rabi flopping, a novel effect of nonlinear optics which has been predicted theoretically and which is related to the failure of the area theorem.