Biosensors Based on SOI Nanowire Transistors for Biomedicine and Virusology

This article contains the results of research on the topical problem of highly sensitive express registration of biological objects using field-effect transistors with the surface open for analyte access, which are made based on silicon-on-insulator (SOI) films. The possibilities of dielectrophoretic effects for controlling the concentration of the analyte in the area of sensory elements are considered on the example of the indication of viruses of nuclear polyhedrosis and vaccinia. It is shown that the use of the dielectrophoresis (DEPh) effect makes it possible to solve (1) the key tasks for creating sensor systems: increasing the detecting ability, as well as exrtacting and verifying the signal from the target particles; and (2) the fundamental task: determining the charge state of the analyte in solutions without modifying the sensors’ surface. The problems and prospects of the mass application of nanowire (NW) biosensors, including those with the dielectrophoretic effect, in biotechnology, virology, etc., are discussed.

[Registration of the protein in the serum with a field-effect nanotransistor biosensor]

A method for detection of cancer-associated protein D-NFATc1 in serum using nanowire (NW) biosensor based on field-effect nanotransistor is developed. Field-effect nanotransistor was fabricated on the basis of «silicon-on-insulator» structures. For the biospecific detection of target protein, the NW surface was modified with aptamers against the target protein. Using the 3 um-NW enabled to obtain stable source-drain characteristics and to register D-NFATc1 in serum at concentration of 2.5 x 1014 M in the mode of drain-source current vs. gate voltage characteristics measurements. Data collection in the mode of drain-source current vs. gate voltage characteristics measurements was carried out with the use of high-speed data collection system running TURBO NBS software.

Quantum interferential Y-junction switch

We report the observation of the Fermi energy controlled redirection of the ballistic electron flow in a three-terminal system based on a small (100 nm) triangular quantum dot defined in a two-dimensional electron gas (2DEG). Measurement shows strong large-scale sign-changing oscillations of the partial conductance coefficient difference G(21) - G(23) on the gate voltage in zero magnetic field. Simple formulas and numerical simulation show that the effect can be explained by quantum interference and is associated with weak asymmetry of the dot or inequality of the ports connecting the dot to the 2DEG reservoirs. The effect may be strengthened by a weak perpendicular magnetic field. We also consider an additional three-terminal system in which the direction of the electron flow can be controlled by the voltage on the scanning gate microscopy (SGM) tip.

Molecular-beam epitaxy-grown Si whisker structures: morphological, optical and electrical properties

Scanning electron microscopy, spectroscopic ellipsometry, and current-voltage and current-temperature measurements were employed to characterize nanowhisker structures grown by molecular-beam epitaxy on Si(111) substrates. Small clusters of gold deposited on the Si surface were used as the seeds for nanowhisker growth. The diameter of grown nanowhiskers and their length ranged from 70 to 200 nm and from 580 to 890 nm, respectively. The whiskers were found to inherit the (111) orientation of the Si substrate. By means of spectroscopic ellipsometry in the range 1.5-4.77 eV, lateral optical inhomogeneity of the nanowhisker layer was revealed, with optical properties of the layer substantially differing from those of single-crystal Si. Electrical measurements point to the presence of a Schottky barrier with height 0.70 eV in the structure and to the presence of electrically active centers non-uniformly distributed over the nanowhisker length.

Application of ultrahigh vacuum reflection electron microscopy for the study of clean silicon surfaces in sublimation, epitaxy, and phase transitions

The construction and performance of an ultrahigh vacuum reflection electron microscope (UHV REM) on the base of a transmission electron microscope with top entry stage are described. Some results of in situ study of structural transformations on clean silicon surfaces during sublimation, surface phase transitions, and initial stages of epitaxial growth are shown.