GaAs membrane PhC lasers threshold reduction using AlGaAs barriers and improved processing

Active suspended membranes are an ideal test-bench for experimenting with novel laser geometries and principles. We show that adding thin AlGaAs barrier near the top and bottom Air/GaAs interfaces of the membrane significantly reduces the carriers non-radiative recombinations and decreases the threshold of test photonic crystal test lasers. We review the existing literature on photonic crystal membrane fabrication and propose an overview of the significant defects that can be induced by each fabrication step. Finally we propose a complete processing scheme that overcome most of these defects.

Integration of the Rhombohedral BiSb(0001) Topological Insulator on a Cubic GaAs(001) Substrate

Bismuth-antimony alloy (Bi_1 - xSb_x) is the first reported 3D topological insulator (TI). Among many TIs reported to date, it remains the most promising for spintronic applications thanks to its large conductivity, its colossal spin Hall angle, and the possibility to build low-current spin-orbit-torque magnetoresistive random access memories. Nevertheless, the 2D integration of TIs on industrial standards is lacking. In this work, we report the integration of high-quality rhombohedral BiSb(0001) topological insulators on a cubic GaAs(001) substrate. We demonstrate a clear epitaxial relationship at the interface, a fully relaxed TI layer, and the growth of a rhombohedral matrix on top of the cubic substrate. The antimony composition of the Bi_1 - xSb_x layer is perfectly controlled and covers almost the whole TI window. For optimized growth conditions, the sample generates a semiconductor band structure at room temperature in the bulk and exhibits metallic surface states at 77 K.

Magnification inferred curvature for real-time curvature monitoring

The in situ and real-time measurement of curvature changes of optically reflecting surfaces is a key element to better control bottom-up fabrication processes in the semiconductor industry, but also to follow or adjust mirror deformations during fabrication and use for space or optics industries. Despite progresses made in the last two decades thanks to laser deflectometry-based techniques, the community lacks an instrument, easy to use, robust to tough environments and easily compatible with a large range of fabrication processes. We describe here a new method, called magnification inferred curvature (MIC), based on the determination of the magnification factor of the virtual image size of a known object created by a reflecting curved surface (the substrate) acting as a spherical mirror. The optical formalism, design, and proof of concept are presented. The precision, accuracy, and advantages of the MIC method are illustrated from selected examples taken from real-time growth monitoring and compared with state-of-the-art laser deflectometry-based instruments.

Extended cavity quantum cascade laser with cavity resonator integrated grating filter

We report on an extended cavity quantum cascade laser based on a cavity resonator integrated grating filter (CRIGF) that acts as both cavity end-reflector and spectral selector. Stable, mode-hop free, single-mode emission around 2150 cm^-1 is obtained over large injection current ranges (more than 50 mA) with a typical threshold around 290 mA. A digital frequency tuning over more than 65 cm^-1 is obtained by changing the periodicity of the CRIGF ending the extended cavity.

Effects of Thermal Annealing and Selective Chemical Etching on Structural and Optical Properties of GaAsBi Epilayer with Droplet Systems

A GaAs_1-xBi_x layer was grown by molecular beam epitaxy (MBE) with a low Bi content (2.3%) on GaAs maintaining the substrate at a non-rotating state and was then annealed at 750 °C, 800 °C and 850 °C. Each sample that was covered with droplets was investigated by using the Atomic Force Microscopy (AFM), Electrostatic Force Microscopy (EFM) and Photoluminescence (PL) techniques. The surface properties of the GaAs_1-xBi_x layer were investigated by AFM and observed to have a droplet system, which was composed of a donut and a tail. The optical quality of the samples was enhanced after thermal annealing up to 800 °C, and the maximum PL intensity was obtained at 750 °C. AFM images revealed that the shape of the droplet and tail changed with increasing annealing temperature. EFM images revealed a phase separation on the surface droplet system. To explore the nature of the droplets, previously claimed to be made of Ga and/or Bi, and their effect on PL spectrum, a chemical etch procedure was carried out by using diluted solutions of H₂SO₄ and/or HCl. We showed that droplets may be efficiently removed from the surface, and PL intensity could be improved by using a proper sequence of chemical etching procedures. Furthermore, the presence of two different phases for the droplet-system observed by EFM was also confirmed by the selective etching procedure.

Mid-infrared cavity resonator integrated grating filters

Cavity Resonator Grating Filters (CRIGFs) working in the Mid-Infrared are reported, with narrow-band resonant reflectivity peaks around 2200 cm^-1 (4.6 µm). They are fabricated in the GaAs/AlGaAs material system that can potentially cover the whole [1-12] µm spectral range. TE-polarized peak reflectivity is 30% with a 4 cm^-1 full width at half maximum.

Scanning microwave microscopy applied to semiconducting GaAs structures

A calibration algorithm based on one-port vector network analyzer (VNA) calibration for scanning microwave microscopes (SMMs) is presented and used to extract quantitative carrier densities from a semiconducting n-doped GaAs multilayer sample. This robust and versatile algorithm is instrument and frequency independent, as we demonstrate by analyzing experimental data from two different, cantilever- and tuning fork-based, microscope setups operating in a wide frequency range up to 27.5 GHz. To benchmark the SMM results, comparison with secondary ion mass spectrometry is undertaken. Furthermore, we show SMM data on a GaAs p-n junction distinguishing p- and n-doped layers.

Low-loss buried AlGaAs/AlOx waveguides using a quasi-planar process

In this paper, we demonstrate that buried oxide-confined waveguides can be formed using a lateral oxidation process carried out through a discrete set of small-diameter via-holes instead of the conventional scheme where the oxidation starts from the edges of etched mesas. The via-hole oxidation is shown to lead to straight waveguides with smooth oxide/semiconductor interfaces and whose propagation losses are similar to one obtained using the standard process but with the advantage of maintaining a quasi-planar wafer surface. It thereby paves the way towards a simplification of the fabrication of III-V-semiconductor-oxide photonic devices.

Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing

We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy have been employed to get some insight into its structural properties. Stationary and time-resolved photoluminescence shows that the quantum well emission, peaking at 1.23 μm at room temperature, can be improved by a rapid annealing at 650°C, while the use of a higher annealing temperature leads to emission degradation and blue-shifting due to the activation of non-radiative centers and bismuth diffusion from the quantum well.

Bismuth-induced effects on optical, lattice vibrational, and structural properties of bulk GaAsBi alloys

Bulk GaAs1 - xBix/GaAs alloys with various bismuth compositions are studied using power- and temperature-dependent photoluminescence (PL), Raman scattering, and atomic force microscopy (AFM). PL measurements exhibit that the bandgap of the alloy decreases with increasing bismuth composition. Moreover, PL peak energy and PL characteristic are found to be excitation intensity dependent. The PL signal is detectable below 150 K at low excitation intensities, but quenches at higher temperatures. As excitation intensity is increased, PL can be observable at room temperature and PL peak energy blueshifts. The quenching temperature of the PL signal tends to shift to higher temperatures with increasing bismuth composition, giving rise to an increase in Bi-related localization energy of disorders. The composition dependence of the PL is also found to be power dependent, changing from about 63 to 87 meV/Bi% as excitation intensity is increased. In addition, S-shaped temperature dependence at low excitation intensities is observed, a well-known signature of localized levels above valence band. Applying Varshni's law to the temperature dependence of the PL peak energy, the concentration dependence of Debye temperature (β) and thermal expansion coefficient (α) are determined. AFM observations show that bismuth islands are randomly distributed on the surface and the diameter of the islands tends to increase with increasing bismuth composition. Raman scattering spectra show that incorporation of Bi into GaAs causes a new feature at around 185 cm-1 with slightly increasing Raman intensity as the Bi concentration increases. A broad feature located between 210 and 250 cm-1 is also observed and its intensity increases with increasing Bi content. Furthermore, the forbidden transverse optical (TO) mode becomes more pronounced for the samples with higher bismuth composition, which can be attributed to the effect of Bi-induced disorders on crystal symmetry.

PACS

78.55Cr 78.55-m 78.20-e 78.30-j.

Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi

The exciton recombination processes in a series of elastically strained GaAsBi epilayers are investigated by means of time-integrated and time-resolved photoluminescence at T = 10 K. The bismuth content in the samples was adjusted from 1.16% to 3.83%, as confirmed by high-resolution X-ray diffraction (HR-XRD). The results are well interpreted by carrier trapping and recombination mechanisms involving the Bi-related localized levels. Clear distinction between the localized and delocalized regime was observed in the spectral and temporal photoluminescence emission.

Bound states in optical absorption of semiconductor quantum wells containing a two-dimensional electron Gas

The dependence of the optical absorption spectrum of a semiconductor quantum well on two-dimensional electron concentration n(e) is studied using CdTe samples. The trion peak (X-) seen at low n(e) evolves smoothly into the Fermi edge singularity at high n(e). The exciton peak (X) moves off to high energy, weakens, and disappears. The X,X- splitting is linear in n(e) and closely equal to the Fermi energy plus the trion binding energy. For Cd0.998Mn0.002Te quantum wells in a magnetic field, the X,X- splitting reflects unequal Fermi energies for M = +/-1/2 electrons. The data are explained by Hawrylak's theory of the many-body optical response including spin effects.