Breakdown of Far-Field Raman Selection Rules by Light-Plasmon Coupling Demonstrated by Tip-Enhanced Raman Scattering

We present an experimental study on the near-field light-matter interaction by tip-enhanced Raman scattering (TERS) with polarized light in three different materials: germanium-doped gallium nitride (GaN), graphene, and carbon nanotubes. We investigate the dependence of the TERS signal on the incoming light polarization and on the sample carrier concentration, as well as the Raman selection rules in the near-field. We explain the experimental data with a tentative quantum mechanical interpretation, which takes into account the role of plasmon polaritons, and the associated evanescent field. The driving force for the breakdown of the classical Raman selection rules in TERS is caused by photon tunneling through the perturbation of the evanescent field, with the consequent polariton annihilation. Predictions based on this quantum mechanical approach are in good agreement with the experimental data, which are shown to be independent of incoming light polarization, leading to new Raman selection rules for TERS.

Spatial control of the energy metabolism of yeast cells through electrolytic generation of oxygen

The metabolic dynamics of yeast cells is controlled by electric pulses delivered through a spatially extended yeast cell/Au electrode interface. Concomitant with voltage pulses, oxygen is generated electrolytically at the electrode surface and delivered to the cells. The generation of oxygen was investigated in dependence of the applied voltage, width of the voltage pulses and temperature of the electrolytic solution. The local oxygen pulses at the electrodes lead to a transient activation of the aerobic energy metabolism of the yeast cells causing a perturbation in their energy balance. The effect of these local perturbations on the temporal dynamics of glycolysis in yeast cells is quantified in dependence of the energy state of cells.

High resolution X-ray diffraction of MOVPE-grown ZnO/GaN/sapphire layers

High quality ZnO is an interesting material for electronic and optoelectronic applications. It belongs to the wide gap semiconductors (bandgap = 3.3 eV). In this paper we present ZnO layers grown by MOVPE (metalorganic vapor phase epitaxy). Several growth parameters like growth temperature and thickness of the layer were varied. For comprehensive investigations of the crystalline quality we employed different X-ray fine structure methods.

Exact determination of Indium incorporation in (In x Ga1– x N/GaN)-multiple quantum well structures by X-ray diffraction and -reflectivity and its impact on optical properties

We studied the structural and optical properties of In x Ga1– x N/GaN multiple quantum wells (MQWs) on Si(111) grown by metal organic vapor phase epitaxy by means of photoluminescence, X-ray reflectometry (XRR), and high resolution X-ray diffractometry (HRXRD). The combination of both X-ray analysis methods allows a very precise determination of the structural parameters of the layer systems. In particular, the Indium incorporation and the well thickness of the optically active layers were investigated. Thus, in dependence on crystallographic quality and thicknesses, their error bars of determined values could be reduced to an accuracy of lower than 0.2 nm of well thickness and Δx = 0.02 of Indium proportion. By growing systematic series with various MOVPE deposition temperatures and times the correlations to the optical properties were determined.

Fabrication, self-assembly, and properties of ultrathin AlN/GaN porous crystalline nanomembranes: tubes, spirals, and curved sheets

Ultrathin AlN/GaN crystalline porous freestanding nanomembranes are fabricated on Si(111) by selective silicon etching, and self-assembled into various geometries such as tubes, spirals, and curved sheets. Nanopores with sizes from several to tens of nanometers are produced in nanomembranes of 20-35 nm nominal thickness, caused by the island growth of AlN on Si(111). No crystal-orientation dependence is observed while releasing the AlN/GaN nanomembranes from the Si substrate indicating that the driving stress mainly originates from the zipping effect among islands during growth. Competition between different relaxation mechanisms is experimentally revealed for different nanomembrane geometries and well-described by numerical calculations. The cathodoluminescence emission from GaN nanomembranes reveals a weak peak close to the GaN bandgap, which is dramatically enhanced by electron irradiation.

Electrical stimulation of the energy metabolism in yeast cells using a planar Ti-Au-electrode interface

We report on the influence of dielectric pulse injection on the energy metabolism of yeast cells with a planar interdigitated electrode interface. The energy metabolism was measured via NADH fluorescence. The application of dielectric pulses results in a distinct decrease of the fluorescence, indicating a response of the energy metabolism of the yeast cells. The reduction of the NADH signal significantly depends on the pulse parameters, i.e., amplitude and width. Furthermore, the interface is used to detect electrical changes in the cell-electrolyte system, arising from glucose-induced oscillations in yeast cells and yeast extract, by dielectric spectroscopy at 10 kHz. These dielectric investigations revealed a beta(1)-dispersion for the system electrolyte/yeast cells as well as for the system electrolyte/yeast extract. In agreement with control measurements we obtained a glycolytic period of 45 s for yeast cells and of 11 min for yeast extract.

Template-assisted large-scale ordered arrays of ZnO pillars for optical and piezoelectric applications

Spatially separated ZnO pillars, typically 300 nm in diameter and 2 microm in height, are fabricated via a template-directed approach that leads to long-range hexagonal order. The templates of Au nanodisk arrays are obtained by using metal membranes as a lithography mask. The growth of ZnO pillars is performed in a double-tube system through vapor diffusion-deposition. The growth mechanism of the pillars is studied in detail and is proposed to be a combination of vapor-liquid-solid and vapor-solid models. The piezoelectric and optical properties of single pillars are characterized using piezoresponse force microscopy and micro-photoluminescence spectroscopy, respectively. The pillars show strong excitonic emissions up to room temperature, which indicate a relatively low defect density and good crystalline quality. The obtained piezoelectric coefficient d(33) is (7.5+/-0.6) pm V(-1), which is to our knowledge the first reported value for a single nanopillar.

Mechanical manipulation of molecular lattice parameters in smectic elastomers

Smectic liquid crystalline elastomers (SLCE) represent unique materials that combine a 1-D molecular lattice arrangement and orientational order with rubber-elasticity mediated by a polymer network. Such materials may exhibit large thermo-mechanical, opto-mechanical and electro-mechanical effects, due to the coupling of macroscopic sample geometry and microscopic structural features. It is shown that the molecular layer dimensions in the smectic phases can be influenced reversibly by macroscopic strain of the material. We present a microscopic model on the basis of experimental results obtained by mechanical dilatation measurements, optical interferometry, X-ray scattering, (13)C NMR, FTIR and polarizing microscopy data. The model gives an explanation of the controversial results obtained in different types of smectic elastomers.