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Tonkikh AA, Voloshina EN, Werner P, Blumtritt H, Senkovskiy B, Güntherodt G, Parkin SSP, Dedkov YS. Structural and electronic properties of epitaxial multilayer h-BN on Ni(111) for spintronics applications. Sci Rep 2016; 6:23547. [PMID: 27009238 PMCID: PMC4806377 DOI: 10.1038/srep23547] [Citation(s) in RCA: 69] [Impact Index Per Article: 8.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2015] [Accepted: 03/09/2016] [Indexed: 12/01/2022] Open
Abstract
Hexagonal boron nitride (h-BN) is a promising material for implementation in spintronics due to a large band gap, low spin-orbit coupling, and a small lattice mismatch to graphene and to close-packed surfaces of fcc-Ni(111) and hcp-Co(0001). Epitaxial deposition of h-BN on ferromagnetic metals is aimed at small interface scattering of charge and spin carriers. We report on the controlled growth of h-BN/Ni(111) by means of molecular beam epitaxy (MBE). Structural and electronic properties of this system are investigated using cross-section transmission electron microscopy (TEM) and electron spectroscopies which confirm good agreement with the properties of bulk h-BN. The latter are also corroborated by density functional theory (DFT) calculations, revealing that the first h-BN layer at the interface to Ni is metallic. Our investigations demonstrate that MBE is a promising, versatile alternative to both the exfoliation approach and chemical vapour deposition of h-BN.
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Affiliation(s)
- A A Tonkikh
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Saale), Germany.,Institute for Physics of Microstructures RAS, 603950, GSP-105, Nizhny Novgorod, Russia
| | - E N Voloshina
- Humboldt-Universität zu Berlin, Institut für Chemie, 10099 Berlin, Germany
| | - P Werner
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Saale), Germany
| | - H Blumtritt
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Saale), Germany
| | - B Senkovskiy
- Institute of Solid State Physics, Dresden University of Technology, 01062 Dresden, Germany.,St. Petersburg State University, 198504 St. Petersburg, Russia
| | - G Güntherodt
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Saale), Germany.,2nd Institute of Physics and JARA-FIT, RWTH Aachen University, 52074 Aachen, Germany
| | - S S P Parkin
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Saale), Germany
| | - Yu S Dedkov
- SPECS Surface Nano Analysis GmbH, Voltastraße 5, 13355 Berlin, Germany
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Verbitskiy NI, Fedorov AV, Profeta G, Stroppa A, Petaccia L, Senkovskiy B, Nefedov A, Wöll C, Usachov DY, Vyalikh DV, Yashina LV, Eliseev AA, Pichler T, Grüneis A. Atomically precise semiconductor--graphene and hBN interfaces by Ge intercalation. Sci Rep 2015; 5:17700. [PMID: 26639608 PMCID: PMC4671056 DOI: 10.1038/srep17700] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/22/2015] [Accepted: 11/04/2015] [Indexed: 12/04/2022] Open
Abstract
The full exploration of the potential, which graphene offers to nanoelectronics requires its integration into semiconductor technology. So far the real-world applications are limited by the ability to concomitantly achieve large single-crystalline domains on dielectrics and semiconductors and to tailor the interfaces between them. Here we show a new direct bottom-up method for the fabrication of high-quality atomically precise interfaces between 2D materials, like graphene and hexagonal boron nitride (hBN), and classical semiconductor via Ge intercalation. Using angle-resolved photoemission spectroscopy and complementary DFT modelling we observed for the first time that epitaxially grown graphene with the Ge monolayer underneath demonstrates Dirac Fermions unaffected by the substrate as well as an unperturbed electronic band structure of hBN. This approach provides the intrinsic relativistic 2D electron gas towards integration in semiconductor technology. Hence, these new interfaces are a promising path for the integration of graphene and hBN into state-of-the-art semiconductor technology.
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Affiliation(s)
- N I Verbitskiy
- Faculty of Physics, University of Vienna, Strudlhofgasse 4, A-1090 Vienna, Austria
- II. Physikalisches Institut, Universität zu Köln, Zülpicher Straβe 77, D-50937 Cologne, Germany
- Department of Materials Science, Moscow State University, Leninskiye Gory 1/3, 119992, Moscow, Russia
| | - A V Fedorov
- II. Physikalisches Institut, Universität zu Köln, Zülpicher Straβe 77, D-50937 Cologne, Germany
- IFW Dresden, P.O. Box 270116, D-01171 Dresden, Germany
- St. Petersburg State University, 7/9 Universitetskaya nab, St. Petersburg, 199034, Russia
| | - G Profeta
- Department of Physical and Chemical Sciences, University of L'Aquila, Via Vetoio 10, I-67100 L'Aquila, Italy
- CNR-SPIN, Via Vetoio 10, I-67100 L'Aquila, Italy
| | - A Stroppa
- CNR-SPIN, Via Vetoio 10, I-67100 L'Aquila, Italy
| | - L Petaccia
- Elettra Sincrotrone Trieste, Strada Statale 14 km 163.5, I-34149 Trieste, Italy
| | - B Senkovskiy
- II. Physikalisches Institut, Universität zu Köln, Zülpicher Straβe 77, D-50937 Cologne, Germany
- St. Petersburg State University, 7/9 Universitetskaya nab, St. Petersburg, 199034, Russia
- Institute of Solid State Physics, Dresden University of Technology, Helmholtzstraße 10, D-01062 Dresden, Germany
| | - A Nefedov
- Institute of Functional Interfaces (IFG), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany
| | - C Wöll
- Institute of Functional Interfaces (IFG), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany
| | - D Yu Usachov
- St. Petersburg State University, 7/9 Universitetskaya nab, St. Petersburg, 199034, Russia
| | - D V Vyalikh
- St. Petersburg State University, 7/9 Universitetskaya nab, St. Petersburg, 199034, Russia
- Institute of Solid State Physics, Dresden University of Technology, Helmholtzstraße 10, D-01062 Dresden, Germany
- IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Spain
- Donostia International Physics Center (DIPC), Departamento de Fisica de Materiales and CFM-MPC UPV/EHU, 20080 San Sebastian, Spain
| | - L V Yashina
- JSC "Giredmet" SRC RF, Tolmachevky St. 5-1 B, 119017 Moscow, Russia
- Department of Chemistry, Moscow State University, Leninskiye Gory 1/3, 119992, Moscow, Russia
| | - A A Eliseev
- Department of Materials Science, Moscow State University, Leninskiye Gory 1/3, 119992, Moscow, Russia
| | - T Pichler
- Faculty of Physics, University of Vienna, Strudlhofgasse 4, A-1090 Vienna, Austria
| | - A Grüneis
- II. Physikalisches Institut, Universität zu Köln, Zülpicher Straβe 77, D-50937 Cologne, Germany
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