Paeonol impacts ovarian cancer cell proliferation, migration, invasion and apoptosis via modulating the transforming growth factor beta/smad3 signaling pathway

Paeonol (2-hydroxy-4-methoxyphenylacetophenone) is a natural phenolic component isolated from the root bark of peony with multiple pharmacological activities and has been proven to have anti-cancer effects. The objective of this study is to investigate the influence mechanism of paeonol on the proliferatory and apoptotic activities of ovarian cancer (OC) cells by modulating the transforming growth factor beta (TGF-β)/Smad3 pathway. The SKOV3 cells were pretreated with various concentrations of paeonol (0, 25, 50, 100, 200, 400 μg/mL) for 48 hours to determine the optimal experimental concentration of paeonol. Following this, the TGF-β overexpression vector was constructed and transfected into the SKOV3 cells. The assessment of cell proliferation, invasion, and migration was conducted through MTT, colony formation, flow cytometry, transwell, and wound-healing experiments. The detection of TGF-β/Smad3 pathway-related proteins and apoptosis-related proteins (B-cell lymphoma (Bcl-2) Bcl-2-associated X protein (Bax)) was performed using Western blot analysis. Paeonol exhibited a significant inhibitory effect on SKOV3 cell viability when administered at concentrations ranging from 50-400 μg/mL, with an IC50 value of 200 μg/mL. Within the concentration range of 50 to 200 μg/mL, paeonol exhibited a dose-dependent effect on the progression of SKOV3 cells, including a reduction in the anti-apoptotic protein Bcl-2, an increase in the pro-apoptotic protein Bax (P<0.05), inhibition of cell migration and invasion (P<0.05), and promotion of cell apoptosis (P<0.05), particularly at a concentration of 200 μg/mL. These effects were found to be more pronounced. The aforementioned effects of paeonol can be ascribed to its inhibition of the TGFβ/Smad3 pathway, according to a mechanistic viewpoint. It is noteworthy that the inhibitory impact of paeonol on SKOV3 cell progression is counteracted by the elevation of TGF-β levels following overexpression. We conclude that paeonol exerts regulatory effects on the TGF-β/Smad3 pathway, leading to the inhibition of proliferation, migration, and invasion of OC cells, thereby attenuating malignant behavior of cancer cells.

Improved Leakage Behavior at High Temperature via Engineering of Ferroelectric Sandwich Structures

The leakage behavior of ferroelectric film has an important effect on energy storage characteristics. Understanding and controlling the leakage mechanism of ferroelectric film at different temperatures can effectively improve its wide-temperature storage performance. Here, the structures of a 1 mol% SiO₂-doped BaZr_0.35Ti_0.65O₃ (BZTS) layer sandwiched between two undoped BaZr_0.35Ti_0.65O₃ (BZT35) layers was demonstrated, and the leakage mechanism was analyzed compared with BZT35 and BZTS single-layer film. It was found that interface-limited conduction of Schottky (S) emission and the Fowler-Nordheim (F-N) tunneling existing in BZT35 and BZTS films under high temperature and a high electric field are the main source of the increase of leakage current and the decrease of energy storage efficiency at high temperature. Only an ohmic conductive mechanism exists in the whole temperature range of BZT35/BZTS/BZT35(1:1:1) sandwich structure films, indicating that sandwich multilayer films can effectively simulate the occurrence of interface-limited conductive mechanisms and mention the energy storage characteristics under high temperature.

Ultrahigh Temperature Lead-Free Film Capacitors via Strain and Dielectric Constant Double Gradient Design

With the development of miniaturization, lightweight and integration of electronic devices, the demand for high-temperature dielectric capacitors is becoming urgent. Nevertheless, the breakdown strength and polarization are deteriorated at high temperatures due to the thermal energy assisting the electron transport and impeding the dipole alignment. Here, a structure of capacitor with double gradients of dielectric constant gradient and strain gradient is designed to achieve high breakdown strength, high working temperature, and high energy storage density simultaneously. It is found that the designed structure of BaHf_0.17 Ti_0.83 O₃ /1mol% SiO₂ doped BaZr_0.35 Ti_0.65 O₃ /0.85BaTiO₃ -0.15Bi(Mg_0.5 Zr_0.5 )O₃ exhibits excellent energy storage performance. The energy storage density of 127.3 J cm^-3 with an energy storage efficiency of 79.6% is realized in the up-sequence multilayer with period N = 2 at room temperature. Moreover, when the working temperature varies from -100 to 200 °C, the energy storage density of the N = 4 capacitor keeps stably at 84.62 J cm^-3 with an energy storage efficiency 78.42% at 6.86 MV cm^-1 . All these properties promise great potential applications of the designed multilayer capacitors with the double gradients in harsh environments, and the design principle can be applicable to other systems to boost working temperature.

[Effect of RNA interference targeting neuropilin-2 gene on proliferation and apoptosis of colon cancer cell line HCT-8]

Objective: To investigate the effects of down-regulation of expression of neuropilin-2 (NRP-2) by RNA interference (RNAi) technique on proliferation and apoptosis of HCT-8 colon cancer cells. Methods: NRP2-siRNA and negative control (NControl)-siRNA were transferred into HCT-8 colon cancer cells by liposomes (lip2000) as transfection group and negative control group, and phosphate buffered solution (PBS) was added as blank control group. Quantitative reverse transcription PCR (RT-qPCR) and Western blot were used to detect the transfection effect. The proliferation of cells in the three groups was examined by cell counting kit (CCK) assay, colony-forming unit assay and Ki-67 protein staining assay, respectively. Moreover, the apoptosis of cells in the three groups was determined by acridine orange/propranidine iodide (AO/PI) staining method. Results: The results of RT-qPCR and Western blot showed that the relative expression of NRP-2 mRNA and the content of NRP-2 protein in the transfer group decreased (0.46±0.05 vs 0.99±0.05 and 1.00±0.06; 1.04±0.06 vs 1.73±0.09 and 1.65±0.11) (all P<0.05). The results of CCK-8 demonstrated that the optical density of transfection group was significantly lower than that of the negative control group and the blank control group(24 h: 0.53±0.04 vs 0.82±0.07 and 0.87±0.07; 48 h: 0.54±0.05 vs 1.00±0.09 and 1.17±0.05; 72 h: 0.75±0.05 vs 1.31±0.13 and 1.50±0.03; 96 h:1.05±0.04 vs 1.46±0.09 and 1.86±0.06) (all P<0.05). The results of colony-forming unit assay indicated that the proliferation ability of the cells in the transfer group was significantly lower than that in the other two groups (134.67±8.74 vs 245.33±19.14 and 300.33±14.01, P<0.05). The results of Ki-67 protein staining assay showed that compared with the negative control group and blank control group, the expression of Ki-67 protein was significantly decreased in the transfection group (5.93±0.22 vs 8.36±0.09 and 8.70±0.21, P<0.05). The results of AO/PI assay revealed that the ratio of apoptotic cells to living cells in the transfer group was significantly higher than that in the other two groups (0.43±0.07 vs 0.14±0.04 and 0.11±0.04, P<0.05). Conclusion: The proliferation ability of HCT-8 colon cancer cells decreases, and the apoptosis ability increases by decreasing the expression of NRP-2.

[Radiomics nomogram of MR: a prediction of cervical lymph node metastasis in laryngeal cancer]

Objective: To establish and validate a radiomics nomogram based on MR for predicting cervical lymph node metastasis in laryngeal cancer. Methods: One hundred and seventeen patients with laryngeal cancer who underwent MR examinations and received open surgery and neck dissection between January 2016 and December 2019 were included in this study. All patients were randomly divided into a training cohort (n=89) and test cohort (n=28) using computer-generated random numbers. Clinical characteristics and MR were collected. Radiological features were extracted from the MR images. Enhanced T1 and T2WI were selected for radiomics analysis, and the volume of interest was manually segmented from the Huiyihuiying radiomics cloud platform. The variance analysis (ANOVA) and the least absolute shrinkage and selection operator (LASSO) algorithm were used to reduce the dimensionality of the radiomics features in the training cohort. Then, a radiomic signature was established. The clinical risk factors were screened by using ANOVA and multivariate logistic regression. A nomogram was generated using clinical risk factors and the radiomic signature. The calibration curve and receiver operator characteristic (ROC) curve were used to confirm the nomogram's performance in the training and test sets. The clinical usefulness of the nomogram was evaluated by decision curve analysis (DCA). Furthermore, a testing cohort was used to validate the model. Results: The radiomics signature consisted of 21 features, and the nomogram model included the radiomics signature and the MR-reported lymph node status. The model showed good calibration and discrimination. The model yielded areas under the ROC curve (AUC) in the training cohort, specificity, and sensitivity of 0.930, 0.930 and 0.875. In the test cohort, the model yielded AUC, specificity and sensitivity of 0.883, 0.889 and 0.800. DCA indicated that the nomogram model was clinically useful. Conclusion: The MR-based radiomics nomogram model may be used to predict cervical lymph node metastasis of laryngeal cancer preoperatively. MR-based radiomics could serve as a potential tool to help clinicians make an optimal clinical decision.

Enhanced Energy Storage Performance of Lead-Free Capacitors in an Ultrawide Temperature Range via Engineering Paraferroelectric and Relaxor Ferroelectric Multilayer Films

Industry has been seeking a thin-film capacitor that can work at high temperature in a harsh environment, where cooling systems are not desired. Up to now, the working temperature of the thin-film capacitor is still limited up to 200 °C. Herein, we design a multilayer structure with layers of paraferroelectric (Ba_0.3Sr_0.7TiO₃, BST) and relaxor ferroelectric (0.85BaTiO₃-0.15Bi(Mg_0.5Zr_0.5)O₃, BT-BMZ) to realize optimum properties with a flat platform of dielectric constant and high breakdown strength for excellent energy storage performance at high temperature. Through optimizing the multilayer structure, a highly stable relaxor ferroelectric state is obtained for the BST/BT-BMZ multilayer thin-film capacitor with a total thickness of 230 nm, a period number N = 8, and a layer thickness ratio of BST/BT-BMZ = 3/7. The optimized multilayer film shows significantly improved energy storage density (up to 30.64 J/cm³) and energy storage efficiency (over 70.93%) in an ultrawide temperature range from room temperature to 250 °C. Moreover, the multilayer system also exhibits excellent thermal stability in such an ultrawide temperature range with a change of 5.15 and 12.75% for the recoverable energy density and energy storage efficiency, respectively. Our results demonstrate that the designed thin-film capacitor is promising for the application in a harsh environment and open a way to tailor a thin-film capacitor toward higher working temperature with enhanced energy storage performance.

Sub-Angstrom Characterization of the Structural Origin for High In-Plane Anisotropy in 2D GeS2

Materials with layered crystal structures and high in-plane anisotropy, such as black phosphorus, present unique properties and thus promise for applications in electronic and photonic devices. Recently, the layered structures of GeS₂ and GeSe₂ were utilized for high-performance polarization-sensitive photodetection in the short wavelength region due to their high in-plane optical anisotropy and wide band gap. The highly complex, low-symmetric (monoclinic) crystal structures are at the origin of the high in-plane optical anisotropy, but the structural nature of the corresponding nanostructures remains to be fully understood. Here, we present an atomic-scale characterization of monoclinic GeS₂ nanostructures and quantify the in-plane structural anisotropy at the sub-angstrom level in real space by Cs-corrected scanning transmission electron microscopy. We elucidate the origin of this high in-plane anisotropy in terms of ordered and disordered arrangement of [GeS₄] tetrahedra in GeS₂ monolayers, through density functional theory (DFT) calculations and orbital-based bonding analyses. We also demonstrate high in-plane mechanical, electronic, and optical anisotropies in monolayer GeS₂ and envision phase transitions under uniaxial strain that could potentially be exploited for nonvolatile memory applications.

An Unconventional Transient Phase with Cycloidal Order of Polarization in Energy-Storage Antiferroelectric PbZrO3

Antiferroelectric-based dielectric capacitors are receiving tremendous attention for their outstanding energy-storage performance and extraordinary flexibility in collecting pulsed powers. Nevertheless, the in situ atomic-scale structural-evolution pathway, inherently coupling to the energy storage process, has not been elucidated for the ultimate mechanistic understanding so far. Here, time- and atomic-resolution structural phase evolution in antiferroelectric PbZrO₃ during storage of energy from the electron-beam illumination is reported. By employing state-of-the-art negative-spherical-aberration imaging technique, the quantitative transmission electron microscopy study presented herein clarifies that the hierarchical evolution of polar oxygen octahedra associated with the unit-cell volume change and polarization rotation accounts for the stepwise antiferroelectric-to-ferroelectric phase transition. In particular, an unconventional ferroelectric category-the ferrodistortive phase characteristic of a unique cycloidal polarization order-is established during the dynamic structure investigation. Through clarifying the atomic-scale phase transformation pathway, findings of this work unveil a new territory to explore novel ferrodistortive phases in energy-storage materials with the nonpolar-to-polar phase transitions.

Changing the Phosphorus Allotrope from a Square Columnar Structure to a Planar Zigzag Nanoribbon by Increasing the Diameter of Carbon Nanotube Nanoreactors

Elemental phosphorus nanostructures are notorious for a large number of allotropes, which limits their usefulness as semiconductors. To limit this structural diversity, we synthesize selectively quasi-1D phosphorus nanostructures inside carbon nanotubes (CNTs) that act both as stable templates and nanoreactors. Whereas zigzag phosphorus nanoribbons form preferably in CNTs with an inner diameter exceeding 1.4 nm, a previously unknown square columnar structure of phosphorus is observed to form inside narrower nanotubes. Our findings are supported by electron microscopy and Raman spectroscopy observations as well as ab initio density functional theory calculations. Our computational results suggest that square columnar structures form preferably in CNTs with an inner diameter around 1.0 nm, whereas black phosphorus nanoribbons form preferably inside CNTs with a 4.1 nm inner diameter, with zigzag nanoribbons energetically favored over armchair nanoribbons. Our theoretical predictions agree with the experimental findings.

[Three cases of head and neck carcinosarcoma]

Summary Head and neck carcinosarcoma leads to kinds of manifestations because of different original tumor sites, such as hoarseness and dyspnea in larynx, pharyngalgia and dysphagia in pharynx and compression in neck. Imaging examinations show specific occupying tumor sites and sometimes discover peripheral invasion. Pathological examination reveals both malignant squamous epithelium and interstitial tissue in these tumors，and therefore we diagnose these tumors as carcinosarcoma.

[Effect of microRNA-27a-3p on proliferation, apoptosis and cell cycle of hepatoma cells]

Objective: To investigate the effect of miR-27a-3p on proliferation, apoptosis and cell cycle of hepatoma cells. Methods: A quantitative real-time polymerase chain reaction (qPCR) was used to detect differential expression of miR-27a-3p in normal hepatic epithelial cells (L02) and hepatoma cells (HepG2 and PLC). Cell experiment was divided into four groups: HepG2 overexpression cells, Mi-27a-3p overexpression group (Mi-27a) and negative control group (Mi-Con); PLC knockdown cells, Mi-27a-3p knockdown group (Mi-inhibitor-27a) and negative control group (Mi-inhibitor-Con). The expression of microRNA-27a-3p in each group after transfection was detected by qPCR analysis. MTT assay was used to detect the cell proliferation. Flow cytometry was used to detect the apoptosis and cell cycle. One-way ANOVA was used for multiple comparisons, and t-test was used to compare two groups. Results: qPCR results showed that the expression levels of miR-27a-3p in L02, HepG2 and PLC increased sequentially, and the relative expression levels were 1.07 ± 0.04, 4.81 ± 0.64 and 11.31 ± 0.92, respectively (P < 0.05). MTT assay showed that the cell viability of HepG2 cells transfected with miR-27a-3p overexpression plasmid was significantly decreased compared with the negative control group (P < 0.05). The apoptosis assay showed that the apoptosis rate of miR-27a-3p overexpression group was higher than the negative control group (P < 0.05). The cell cycle results showed that the proportion of S phase cells in the miR-27a-3p overexpression cell group was significantly lower than the negative control group (P < 0.05). Furthermore, microRNA-27a-3p knockdown validation in PLC cells showed that MTT, apoptosis and cell cycle tests results were opposite to the results of HepG2 overexpression cells, and the differences were statistically significant (P < 0.05). Conclusion: miR-27a-3p can significantly inhibit the proliferation of hepatoma cells, promote cell apoptosis, alter the cell cycle distribution, and may become a potential target in hepatocellular carcinoma therapy.

Local crystallographic shear structures in a[201] extended mixed dislocations of SrTiO3 unraveled by atomic-scale imaging using transmission electron microscopy and spectroscopy

Recently, extended mixed dislocations were observed at a [001]/(100) low-angle tilt grain boundary of a SrTiO3 bicrystal because of a slight twist between the two crystal parts. The b = a[201]/(100) mixed dislocations at the grain boundary dissociate into three dislocations with Burgers vector b of a/2[101], a[100], and a/2[101], respectively. A structure model has been proposed in particular for the dislocation cores of the two partials with b = a/2[101] based on the high-angle annular dark-field (HAADF) images acquired by scanning transmission electron microscopy (STEM). However, the details of the atomic structure and the chemical composition of the dislocation cores remain unexplored, especially for the b = a[100] dislocation that is evidently disassociated into two b = a/2[101] partial dislocations. In this work, we study the further atomic details of the extended mixed dislocations, in particular the local chemistry, in a SrTiO3 bicrystal using STEM, electron energy loss spectroscopy (EELS), and energy dispersive X-ray (EDX) spectroscopy techniques. By these atomic-scale imaging techniques, we reveal a unique feature for the atomic structure of the b = a[201]/(100) extended mixed dislocation, which we named as local crystallographic shear (LCS) structures. In addition, we identify a rock salt FCC-type TiOx (x = 0.66-1.24) phase at the locations of the extended mixed dislocations. In contrast to the insulating TiO2 phases, the TiOx phase is known to exhibit very low electrical resistivity of only several μΩ cm. In this regard, the extended mixed dislocations of SrTiO3 comprising the FCC TiOx phase may function as the conducting filament in resistive switching processes by completion and disruption of the TiOx phase along the dislocation cores through electrically stimulated redox reactions.

All-Inorganic Flexible Embedded Thin-Film Capacitors for Dielectric Energy Storage with High Performance

As passive components in flexible electronics, the dielectric capacitors for energy storage are facing the challenges of flexibility and capability for integration and miniaturization. In this work, the all-inorganic flexible dielectric film capacitors have been obtained. The flexible capacitors show a desirable recoverable energy density ( W_rec) of 40.6 J/cm³ and a good energy efficiency (η) of 68.9%. Moreover, they have no obvious deterioration on both the W_rec and η after 10⁴ times of mechanical bending cycles or under the bending state with a curvature radius of 4 mm. Besides, the outstanding stability of the capacitors against cycle fatigue over fast 10⁶ charge-discharge cycles is demonstrated. Most importantly, they work properly at a wide temperature range from -120 to 150 °C with W_rec > 15 J/cm³ and η > 70%. These fascinating performances endow the flexible capacitors with huge potential application in the future "microenergy storage" system in flexible electronics.

Flexible Lithium Ferrite Nanopillar Arrays for Bending Stable Microwave Magnetism

Recent development in magnetic nanostructures has promoted flexible electronics into the application of integrated devices. However, the magnetic properties of flexible devices strongly depend on the bending states. In order to realize the design of new flexible devices driven by an external field, the first step is to make the magnetic properties insensitive to the bending. Herein, a series of LiFe₅O₈ nanopillar arrays were fabricated, whose microwave magnetic properties can be modulated by tuning the nanostructure. This work demonstrates that nanostructure engineering is useful to control the bending sensitivity of microwave magnetism and further design stable flexible devices.

Atomic-scale evidence for displacive disorder in bismuth zinc niobate pyrochlore

Pyrochlores characterized by the chemical formula A₂B₂O₇ form an extended class of materials with interesting physical and chemical properties. The compound Bi_1.5ZnNb_1.5O₇ is prototypical. Its excellent dielectric properties make it attractive, e.g. for capacitors, tunable microwave devices and electric-energy storage equipment. Bi_1.5ZnNb_1.5O₇ shows an intriguing frequency-dispersive dielectric relaxation at 50 K ≤ T ≤ 250 K, which has been studied intensively but is still not fully understood. In this first study on a pyrochlore by atomic-resolution transmission electron microscopy we observe the Bi atoms on A sites since, due to their low nuclear charge, the contribution of Zn atoms to the contrast of these sites is negligible. We find in our [1¯00]and [112] oriented images that the position of the atomic intensity maxima do not coincide with the projected Wyckoff positions of the basic pyrochlore lattice. This supplies atomic-scale evidence for displacive disorder on split A-type sites. The Bi atoms are sessile, only occasionally we observe in time sequences of images jumps between individual split-site positions. The apertaining jump rate of the order of 0.1-1 Hz is by ten orders of magnitude lower than the values derived in the literature from Arrhenius plots of the low-temperature dielectric relaxation data. It is argued that these jumps are radiation induced. Therefore our observations are ruling out a contribution of Bi-atom jumps to low-temperature dielectric A sites-related relaxation. It is suggested that this relaxation is mediated by jumps of Zn atoms.

Oxygen Exchange Processes between Oxide Memristive Devices and Water Molecules

Resistive switching based on transition metal oxide memristive devices is suspected to be caused by the electric-field-driven motion and internal redistribution of oxygen vacancies. Deriving the detailed mechanistic picture of the switching process is complicated, however, by the frequently observed influence of the surrounding atmosphere. Specifically, the presence or absence of water vapor in the atmosphere has a strong impact on the switching properties, but the redox reactions between water and the active layer have yet to be clarified. To investigate the role of oxygen and water species during resistive switching in greater detail, isotope labeling experiments in a N2 /H218 O tracer gas atmosphere combined with time-of-flight secondary-ion mass spectrometry are used. It is explicitly demonstrated that during the RESET operation in resistive switching SrTiO3 -based memristive devices, oxygen is incorporated directly from water molecules or oxygen molecules into the active layer. In humid atmospheres, the reaction pathway via water molecules predominates. These findings clearly resolve the role of humidity as both oxidizing agent and source of protonic defects during the RESET operation.

Topological Defects with Distinct Dipole Configurations in PbTiO_{3}/SrTiO_{3} Multilayer Films

Distinct and novel features of nanometric electric topological defects, including dipole waves and dipole disclinations, are presently revealed in the PbTiO_{3} layers of PbTiO_{3}/SrTiO_{3} multilayer films by means of quantitative high-resolution scanning transmission electron microscopy. These original dipole configurations are confirmed and explained by atomistic simulations and have the potential to act as functional elements in future electronics.

Formation of Ruddlesden-Popper Faults and Their Effect on the Magnetic Properties in Pr0.5Sr0.5CoO3 Thin Films

Epitaxial Pr_0.5Sr_0.5CoO₃ thin films have been grown on single-crystalline (La_0.289Sr_0.712)(Al_0.633Ta_0.356)O₃(001) substrates by the pulsed laser deposition technique. The magnetic properties and microstructure of these films are investigated. It is found that Ruddlesden-Popper faults (RP faults) can be introduced in the films by changing the laser repetition rate. The segregation of Pr at the RP faults is characterized by atomic-resolution chemical mapping. The formation of the RP faults not only contributes to the epitaxial strain relaxation but also significantly decreases the ferromagnetic long-range order of the films, resulting in lower magnetizations than those of the fault-free films. Our results provide a strategy for tuning the magnetic properties of cobalt-based perovskite films by modifying the microstructure through the film growth process.

Flexible Quasi-Two-Dimensional CoFe2O4 Epitaxial Thin Films for Continuous Strain Tuning of Magnetic Properties

Epitaxial thin films of CoFe₂O₄ (CFO) have successfully been transferred from a SrTiO₃ substrate onto a flexible polyimide substrate. By bending the flexible polyimide, different levels of uniaxial strain are continuously introduced into the CFO epitaxial thin films. Unlike traditional epitaxial strain induced by substrates, the strain from bending will not suffer from critical thickness limitation, crystalline quality variation, and substrate clamping, and more importantly, it provides a more intrinsic and reliable way to study strain-controlled behaviors in functional oxide systems. It is found that both the saturation magnetization and coercivity of the transferred films can be changed over the bending status and show a high accord with the movement of the curvature bending radius of the polyimide substrate. This reveals that the mechanical strain plays a critical role in tuning the magnetic properties of CFO thin films parallel and perpendicular to the film plane direction.

Large Energy Density, Excellent Thermal Stability, and High Cycling Endurance of Lead-Free BaZr0.2Ti0.8O3 Film Capacitors

A large energy storage density (ESD) of 30.4 J/cm³ and high energy efficiency of 81.7% under an electrical field of 3 MV/cm was achieved at room temperature by the fabrication of environmentally friendly lead-free BaZr_0.2Ti_0.8O₃ epitaxial thin films on Nb-doped SrTiO₃ (001) substrates by using a radio-frequency magnetron sputtering system. Moreover, the BZT film capacitors exhibit great thermal stability of the ESD from 16.8 J/cm³ to 14.0 J/cm³ with efficiency of beyond 67.4% and high fatigue endurance (up to 10⁶ cycles) in a wide temperature range from room temperature to 125 °C. Compared to other BaTiO₃-based energy storage capacitor materials and even Pb-based systems, BaZr_0.2Ti_0.8O₃ thin film capacitors show either high ESD or great energy efficiency. All of these excellent results revealed that the BaZr_0.2Ti_0.8O₃ film capacitors have huge potential in the application of modern electronics, such as locomotive and pulse power, in harsh working environments.

Pavlovian conditioning demonstrated with neuromorphic memristive devices

Pavlovian conditioning, a classical case of associative learning in a biological brain, is demonstrated using the Ni/Nb-SrTiO₃/Ti memristive device with intrinsic forgetting properties in the framework of the asymmetric spike-timing-dependent plasticity of synapses. Three basic features of the Pavlovian conditioning, namely, acquisition, extinction and recovery, are implemented in detail. The effects of the temporal relation between conditioned and unconditioned stimuli as well as the time interval between individual training trials on the Pavlovian conditioning are investigated. The resulting change of the response strength, the number of training trials necessary for acquisition and the number of extinction trials are illustrated. This work clearly demonstrates the hardware implementation of the brain function of the associative learning.

Mobility Modulation and Suppression of Defect Formation in Two-Dimensional Electron Systems by Charge-Transfer Management

Electron mobility is one of the most-debated key attributes of low-dimensional electron systems emerging at complex oxide heterointerfaces. However, a common understanding of how electron mobility can be optimized in these systems has not been achieved so far. Here, we discuss a novel approach for achieving a systematic increase in electron mobility in polar/nonpolar perovskite interfaces by suppressing the thermodynamically required defect formation at the nanoscale. We discuss the transport properties of electron gases established at interfaces between SrTiO₃ and various polar perovskites [LaAlO₃, NdGaO₃, and (La,Sr)(Al,Ta)O₃], allowing for the individual variation of epitaxial strain and charge transfer among these epitaxial interfaces. As we show, the reduced charge transfer at (La,Sr)(Al,Ta)O₃/SrTiO₃ interfaces yields a systematic increase in electron mobility, while the reduced epitaxial strain has only minor impact. As thermodynamic continuum simulations suggest, the charge transfer across these interfaces affects both the spatial distribution of electrons and the background distribution of ionic defects, acting as major scatter centers within the potential well. Easing charge transfer in (La,Sr)(Al,Ta)O₃/SrTiO₃ yields an enlarged spatial separation of mobile charge carriers and scattering centers, as well as a reduced driving force for the formation of ionic defects at the nanoscale. Our results suggest a general recipe for achieving electron enhancements at oxide heterostructure interfaces and provide new perspectives for atomistic understanding of electron scattering in these systems.

Controlled Charging of Ferroelastic Domain Walls in Oxide Ferroelectrics

Conductive domain walls (DWs) in ferroic oxides as device elements are a highly attractive research topic because of their robust and agile response to electric field. Charged DWs possessing metallic-type conductivity hold the highest promises in this aspect. However, their intricate creation, low stability, and interference with nonconductive DWs hinder their investigation and the progress toward future applications. Here, we find that conversion of the nominally neutral ferroelastic 90° DWs into partially charged DWs in Pb(Zr_0.1Ti_0.9)O₃ thin films enables easy and robust control over the DW conductivity. By employing transmission electron microscopy, conductive atomic force microscopy and phase-field simulation, our study reveals that charging of the ferroelastic DWs is controlled by mutually coupled DW bending, type of doping, polarization orientation and work-function of the adjacent electrodes. Particularly, the doping outweighs other parameters in controlling the DW conductivity. Understanding the interplay of these key parameters not only allows us to control and optimize conductivity of such ferroelastic DWs in the oxide ferroelectrics but also paves the way for utilization of DW-based nanoelectronic devices in the future.

Ultrahigh Energy Storage Performance of Lead-Free Oxide Multilayer Film Capacitors via Interface Engineering

Ultrahigh energy storage density of 52.4 J cm^-3 with optimistic efficiency of 72.3% is achieved by interface engineering of epitaxial lead-free oxide multilayers at room temperature. Moreover, the excellent thermal stability of the performances provides solid basis for widespread applications of the thin film systems in modern electronic and power modules in harsh working environments.

Tuning conductivity and magnetism of CuFe2O4via cation redistribution

Both conductivity and magnetism of spinel CuFe₂O₄ can be effectively tuned by the engineered cation redistribution through heat treatment.

Formation mechanism of Ruddlesden-Popper-type antiphase boundaries during the kinetically limited growth of Sr rich SrTiO3 thin films

We elucidated the formation process for Ruddlesden-Popper-type defects during pulsed laser deposition of Sr rich SrTiO3 thin films by a combined analysis of in-situ atomic force microscopy, low energy electron diffraction and high resolution scanning transmission electron microscopy. At the early growth stage of 1.5 unit cells, the excess Sr results in the formation of SrO on the surface, resulting in a local termination change from TiO2 to SrO, thereby forming a Sr rich (2 × 2) surface reconstruction. With progressive SrTiO3 growth, islands with thermodynamically stable SrO rock-salt structure are formed, coexisting with TiO2 terminated islands. During the overgrowth of these thermodynamically stable islands, both lateral as well as vertical Ruddlesden-Popper-type anti-phase boundaries are formed, accommodating the Sr excess of the SrTiO3 film. We suggest the formation of thermodynamically stable SrO rock-salt structures as origin for the formation of Ruddlesden-Popper-type antiphase boundaries, which are as a result of kinetic limitations confined to certain regions on the surface.

Néel-like domain walls in ferroelectric Pb(Zr,Ti)O3 single crystals

In contrast to the flexible rotation of magnetization direction in ferromagnets, the spontaneous polarization in ferroelectric materials is highly confined along the symmetry-allowed directions. Accordingly, chirality at ferroelectric domain walls was treated only at the theoretical level and its real appearance is still a mystery. Here we report a Néel-like domain wall imaged by atom-resolved transmission electron microscopy in Ti-rich ferroelectric Pb(Zr_1−xTi_x)O₃ crystals, where nanometre-scale monoclinic order coexists with the tetragonal order. The formation of such domain walls is interpreted in the light of polarization discontinuity and clamping effects at phase boundaries between the nesting domains. Phase-field simulation confirms that the coexistence of both phases as encountered near the morphotropic phase boundary promotes the polarization to rotate in a continuous manner. Our results provide a further insight into the complex domain configuration in ferroelectrics, and establish a foundation towards exploring chiral domain walls in ferroelectrics.

Flexible rotation of spontaneous polarization at ferroelectric domain walls is predicted in theory but lacks evidence from experiment. Here, Wei et al. image a Néel-like domain wall in Ti-rich ferroelectric Pb(Zr_1−xTi_x)O₃ crystals, providing insight in exploring chiral domain walls in ferroelectrics.

High-performance CuFe2O4 epitaxial thin films with enhanced ferromagnetic resonance properties

CuFe₂O₄ epitaxial films with superior FMR properties compared with bulk material have been successfully fabricated for the first time.

Spectromicroscopic insights for rational design of redox-based memristive devices

The demand for highly scalable, low-power devices for data storage and logic operations is strongly stimulating research into resistive switching as a novel concept for future non-volatile memory devices. To meet technological requirements, it is imperative to have a set of material design rules based on fundamental material physics, but deriving such rules is proving challenging. Here, we elucidate both switching mechanism and failure mechanism in the valence-change model material SrTiO3, and on this basis we derive a design rule for failure-resistant devices. Spectromicroscopy reveals that the resistance change during device operation and failure is indeed caused by nanoscale oxygen migration resulting in localized valence changes between Ti(4+) and Ti(3+). While fast reoxidation typically results in retention failure in SrTiO3, local phase separation within the switching filament stabilizes the retention. Mimicking this phase separation by intentionally introducing retention-stabilization layers with slow oxygen transport improves retention times considerably.

Twinning-like lattice reorientation without a crystallographic twinning plane

Twinning on the plane is a common mode of plastic deformation for hexagonal-close-packed metals. Here we report, by monitoring the deformation of submicron-sized single-crystal magnesium compressed normal to its prismatic plane with transmission electron microscopy, the reorientation of the parent lattice to a ‘twin’ lattice, producing an orientational relationship akin to that of the conventional twinning, but without a crystallographic mirror plane, and giving plastic strain that is not simple shear. Aberration-corrected transmission electron microscopy observations reveal that the boundary between the parent lattice and the ‘twin’ lattice is composed predominantly of semicoherent basal/prismatic interfaces instead of the twinning plane. The migration of this boundary is dominated by the movement of these interfaces undergoing basal/prismatic transformation via local rearrangements of atoms. This newly discovered deformation mode by boundary motion mimics conventional deformation twinning but is distinct from the latter and, as such, broadens the known mechanisms of plasticity.

Deformation twinning and dislocations are known to govern the plastic behaviour of metals at room temperature. Here the authors demonstrate a new deformation mechanism in single-crystal magnesium characterized by twin-like crystal reorientation and special interfaces.

Determination of the 3D shape of a nanoscale crystal with atomic resolution from a single image

Although the overall atomic structure of a nanoscale crystal is in principle accessible by modern transmission electron microscopy, the precise determination of its surface structure is an intricate problem. Here, we show that aberration-corrected transmission electron microscopy, combined with dedicated numerical evaluation procedures, allows the three-dimensional shape of a thin MgO crystal to be determined from only one single high-resolution image. The sensitivity of the reconstruction procedure is not only sufficient to reveal the surface morphology of the crystal with atomic resolution, but also to detect the presence of adsorbed impurity atoms. The single-image approach that we introduce offers important advantages for three-dimensional studies of radiation-sensitive crystals.

Strain-induced anisotropic transport properties of LaBaCo₂O₅.₅+δ thin films on NdGaO₃ substrates

Thin films of double-perovskite structural LaBaCo2O5.5+δ were epitaxially grown on (110) NdGaO3 substrates by pulsed laser deposition. Microstructural studies by high-resolution X-ray diffraction and transmission electron microscopy revealed that the films have an excellent quality epitaxial structure. In addition, strong in-plane anisotropic strains were measured. Electrical transport properties of the films were characterized by an ultra-high-vacuum four-probe scanning tunneling microscopy system at different temperatures. It was found that the anisotropic in-plane strain can significantly tune the values of film resistance up to 590%.

Atomic-scale measurement of structure and chemistry of a single-unit-cell layer of LaAlO3 embedded in SrTiO3

A single layer of LaAlO3 with a nominal thickness of one unit cell, which is sandwiched between a SrTiO3 substrate and a SrTiO3 capping layer, is quantitatively investigated by high-resolution transmission electron microscopy. By the use of an aberration-corrected electron microscope and by employing sophisticated numerical image simulation procedures, significant progress is made in two aspects. First, the structural as well as the chemical features of the interface are determined simultaneously on an atomic scale from the same specimen area. Second, the evaluation of the structural and chemical data is carried out in a fully quantitative way on the basis of the absolute image contrast, which has not been achieved so far in materials science investigations using high-resolution electron microscopy. Considering the strong influence of even subtle structural details on the electronic properties of interfaces in oxide materials, a fully quantitative interface analysis, which makes positional data available with picometer precision together with the related chemical information, can contribute to a better understanding of the functionality of such interfaces.

Negative spherical aberration ultrahigh-resolution imaging in corrected transmission electron microscopy

Aberration-corrected transmission electron microscopy allows us to image the structure of matter at genuine atomic resolution. A prominent role for the imaging of crystalline samples is played by the negative spherical aberration imaging (NCSI) technique. The physical background of this technique is reviewed. The especially high contrast observed under these conditions owes its origin to an enhancing combination of amplitude contrast due to electron diffraction channelling and phase contrast. A number of examples of the application of NCSI are reviewed in order to illustrate the applicability and the state-of-the-art of this technique.

Effect of a single dislocation in a heterostructure layer on the local polarization of a ferroelectric layer

We study, on an atomic scale, the influence of a single dislocation in a SrTiO3 sublayer on the local ferroelectric polarization of the neighboring ferroelectric PbZr0.2Ti0.8O3 (PZT) sublayer in an epitaxial SrTiO3/PbZr0.2Ti0.8O3/SrTiO3 three-layer heterostructure. The strain field of the dislocation in the SrTiO3 layer propagates across the interface into the PZT layer and leads to a strong variation of the c-lattice parameter of the PZT layer. Accompanying a strong reduction of the c-lattice parameter, the off-center displacements of the Zr/Ti atoms away from the center of the oxygen octahedra are also strongly decreased, resulting in a decrease of the local spontaneous polarization by up to 48%.

Atomic-scale study of electric dipoles near charged and uncharged domain walls in ferroelectric films

Ferroelectrics are materials exhibiting spontaneous electric polarization due to dipoles formed by displacements of charged ions inside the crystal unit cell. Their exceptional properties are exploited in a variety of microelectronic applications. As ferroelectricity is strongly influenced by surfaces, interfaces and domain boundaries, there is great interest in exploring how the local atomic structure affects the electric properties. Here, using the negative spherical-aberration imaging technique in an aberration-corrected transmission electron microscope, we investigate the cation-oxygen dipoles near 180 degrees domain walls in epitaxial PbZr(0.2)Ti(0.8)O(3) thin films on the atomic scale. The width and dipole distortion across a transversal wall and a longitudinal wall are measured, and on this basis the local polarization is calculated. For the first time, a large difference in atomic details between charged and uncharged domain walls is reported.

Blood gas, hemoglobin, and growth of Tibetan chicken embryos incubated at high altitude

Metabolism and hatchability are impaired when chicken eggs laid at sea level are incubated at high altitude. The Tibetan chicken is an excellent local poultry breed that inhabits altitudes of 2,900 m and has a hatchability of approximately 75% at that altitude. To understand how Tibetan chicken embryos develop successfully at high altitude, we compared blood gas, pH, hemoglobin concentrations and embryo mass for Tibetan chicken embryos (T) and for embryos from a dwarf breed (D) that normally is reared at sea level. The 2 breeds (T and D) and 2 incubation altitudes (2,900 m = high, H; and 100 m = low, L) were compared at 9, 12, 15, and 18 d of incubation. Embryo weights were lower for the high altitude groups (TH, DH) than for the low altitude groups at all stages of incubation. The embryo mass of TH appeared to increase more quickly than that of DH. Compared with DH, TH embryos had lower arterialized oxygen partial pressure on d 18, higher venous carbon dioxide partial pressure from d 12 to 18, and higher hemoglobin concentration and lower venous blood pH values on d 12 and 15. These findings indicate that the ability of the Tibetan chicken embryos to adapt to the high altitude may be due to the increase in hemoglobin concentration, which augments the blood oxygen-carrying capacity. In addition, the higher venous carbon dioxide partial pressure and lower venous blood pH promote unloading of oxygen from hemoglobin.

Unit-cell scale mapping of ferroelectricity and tetragonality in epitaxial ultrathin ferroelectric films

Typically, polarization and strain in ferroelectric materials are coupled, leading to the generally accepted direct relation between polarization and unit-cell tetragonality. Here, by means of high-resolution transmission electron microscopy we map, on the unit-cell scale, the degree of tetragonality and the displacements of cations away from the centrosymmetry positions in an ultrathin epitaxial PbZr(0.2)Ti(0.8)O(3) film on a SrRuO(3) electrode layer deposited on a SrTiO(3) substrate. The lattice is highly tetragonal at the centre of the film, whereas it shows reduced tetragonality close to the interfaces. Most strikingly, we find that the maximum off-centre displacements for the central area of the film do not scale with the tetragonality. This challenges the fundamental belief in a strong polarization-tetragonality coupling in PbTiO(3)-based ferroelectrics, at such thicknesses. Furthermore, a systematic reduction of the atomic displacements is measured at the interfaces, suggesting that interface-induced suppression of the ferroelectric polarization plays a critical role in the size effect of nanoscale ferroelectrics.

Atomic-scale analysis of the oxygen configuration at a SrTiO3 dislocation core

The atomic structure of a SrTiO3 dislocation is revealed directly by phase-retrieval electron microscopy. In particular, atomic columns of light oxygen are observed simultaneously with the columns of considerably heavier Sr and Ti. A distinct structural modification of the oxygen octahedra at the dislocation core as well as a significant nonstoichiometry, including a deficiency of oxygen, are observed. Deviations from the bulk chemical concentration are quantified column by column by means of structure modeling and quantum-mechanical simulations of the electron scattering process.

High-resolution transmission electron microscopy using negative spherical aberration

A novel imaging mode for high-resolution transmission electron microscopy is described. It is based on the adjustment of a negative value of the spherical aberration C S of the objective lens of a transmission electron microscope equipped with a multipole aberration corrector system. Negative spherical aberration applied together with an overfocus yields high-resolution images with bright-atom contrast. Compared to all kinds of images taken in conventional transmission electron microscopes, where the then unavoidable positive spherical aberration is combined with an underfocus, the contrast is dramatically increased. This effect can only be understood on the basis of a full nonlinear imaging theory. Calculations show that the nonlinear contrast contributions diminish the image contrast relative to the linear image for a positive-C S setting whereas they reinforce the image contrast relative to the linear image for a negative-C S setting. The application of the new mode to the imaging of oxygen in SrTiO3 and YBa2Cu3O7 demonstrates the benefit to materials science investigations. It allows us to image directly, without further image processing, strongly scattering heavy-atom columns together with weakly scattering light-atom columns.

Atomic-Resolution Measurement of Oxygen Concentration in Oxide Materials

Using high-resolution imaging at negative spherical aberration of the objective lens in an aberration-corrected transmission electron microscope, we measure the concentration of oxygen in Sigma3[111] twin boundaries in BaTiO3 thin films at atomic resolution. On average, 68% of the boundary oxygen sites are occupied, and the others are left vacant. The modified Ti2O9 group unit thus formed reduces the grain boundary energy and provides a way of accommodating oxygen vacancies occurring in oxygen-deficient material by the formation of a nanotwin lamellae structure. The atomically resolved measurement technique offers the potential for studies on oxide materials in which the electronic properties sensitively depend on the local oxygen content.

Atomic-resolution imaging of oxygen in perovskite ceramics

Using an imaging mode based on the adjustment of a negative value of the spherical-aberration coefficient of the objective lens of a transmission electron microscope, we successfully imaged all types of atomic columns in the dielectric SrTiO3 and the superconductor YBa2Cu3O7. In particular, we were able to view the oxygen atoms which, due to their low scattering power, were not previously accessible, and this allowed us to detect local nonstoichiometries or the degree of oxygen-vacancy ordering. This technique offers interesting opportunities for research into oxides, minerals, and ceramics. In particular, this holds for the huge group of perovskite-derived electroceramic materials in which the local oxygen content sensitively controls the electronic properties.

High-resolution imaging with an aberration-corrected transmission electron microscope

Recently an electromagnetic hexapole system for the correction of the spherical aberration of the objective lens of a 200 kV transmission electron microscope has been constructed by Haider and coworkers. By appropriately exciting the hexapole elements it is possible to adjust specific values of the spherical aberration coefficient ranging from the value of the original uncorrected instrument over zero even to negative values. In the first part of the paper the consequences of the tunable spherical aberration are investigated. New imaging modes are available: By adjustment of an optimum value for the spherical-aberration coefficient, the point resolution of phase-contrast imaging can be extended to the information limit. Phase-contrast imaging can be improved by a reduced level of contrast delocalisation. For zero aberration contrast delocalisation does not occur. In this case high-resolution investigations are carried out under amplitude-contrast conditions, where the local image intensity of crystalline objects is controlled by electron diffraction channelling. The defocus and spherical aberration values related to the new imaging modes are given. In the second part novel applications of the instrument to semiconductor heterostructures and ceramic grain boundaries are examined.

Direct local epitaxy of diamond on Si(100) and surface-roughening-induced crystal misorientation

A direct diamond epitaxy on the silicon substrate is demonstrated not only at the interface formed during the growth process but also at the nucleation sites. The small (001) terraces with dimensions of several atomic distances at the site of nucleation are formed due to the roughening of silicon surface and lead to the grain misorientation. A model is presented which attempts to explain the initial stages of diamond growth. Predictions are made for methods of improving the nucleation of epitaxial diamond crystallites.