Double-type-I charge-injection heterostructure for quantum-dot light-emitting diodes

Enforcing balanced electron-hole injection into the emitter layer of quantum-dot light-emitting diodes (QLEDs) remains key to maximizing the quantum efficiency over a wide current density range. This was previously thought not possible for quantum dot (QD) emitters because of their very deep energy bands. Here, we show using Mesolight® blue-emitting CdZnSeS/ZnS QDs as a model that its valence levels are in fact considerably shallower than the corresponding band maximum of the bulk semiconductor, which makes the ideal double-type-I injection/confinement heterostructure accessible using a variety of polymer organic semiconductors as transport and injection layers. We demonstrate flat external quantum efficiency characteristics that indicate near perfect recombination within the QD layer over several decades of current density from the onset of device turn-on of about 10 μA cm^-2, for both normal and inverted QLED architectures. We also demonstrate that these organic semiconductors do not chemically degrade the QDs, unlike the usual ZnMgO nanoparticles. However, these more efficient injection heterostructures expose a new vulnerability of the QDs to in device electrochemical degradation. The work here opens a clear path towards next-generation ultra-high-performance, all-solution-processed QLEDs.

Surface Doping of Organic Single-Crystal Semiconductors to Produce Strain-Sensitive Conductive Nanosheets

A highly periodic electrostatic potential, even though established in van der Waals bonded organic crystals, is essential for the realization of a coherent band electron system. While impurity doping is an effective chemical operation that can precisely tune the energy of an electronic system, it always faces an unavoidable difficulty in molecular crystals because the introduction of a relatively high density of dopants inevitably destroys the highly ordered molecular framework. In striking contrast, a versatile strategy is presented to create coherent 2D electronic carriers at the surface of organic semiconductor crystals with their precise molecular structures preserved perfectly. The formation of an assembly of redox-active molecular dopants via a simple one-shot solution process on a molecularly flat crystalline surface allows efficient chemical doping and results in a relatively high carrier density of 1013 cm-2 at room temperature. Structural and magnetotransport analyses comprehensively reveal that excellent carrier transport and piezoresistive effects can be obtained that are similar to those in bulk crystals.

Nearly 100% Photocrosslinking Efficiency in Ultrahigh Work Function Hole-Doped Conjugated Polymers Using Bis(fluorophenyl azide) Additives

Self-compensated (SC) hole-doped conjugated polyelectrolytes with high work functions can provide efficient hole-injection and -collection layers for organic and other semiconductor devices. If these films can be photocrosslinked, the semiconductor overlayer can be deposited from a wider range of solvents, enabling flexibility in device design and fabrication. However, a generic photocrosslinking methodology for these materials is not yet available. Here, we demonstrate that sFPA82-TfO, the recently developed bis(fluorophenyl azide) photocrosslinker that is also i-line compatible, can surprisingly give 100% efficient photocrosslinking for SC hole-doped conjugated polyelectrolytes, i.e., one crosslink per reactive moiety, using mTFF-C₂F₅SIS-Na, a triarylamine-fluorene copolymer, as the model polyelectrolyte, without degrading its ultrahigh work function of 5.75 eV. The photocrosslinking efficiency is much higher than in the corresponding undoped polyelectrolyte and nonconjugated polyelectrolyte films, where the efficiency is only 20%. We attribute this improvement to the formation of smaller ion multiplet clusters in the hole-doped polyelectrolyte, as suggested by molecular dynamics simulations and infrared spectroscopy, which prevents occlusion of the ionic crosslinker. Photocrosslinking of the SC hole-doped mTFF-C₂F₅SIS-Na film used as a hole-injection layer in 100 nm-thick PFOP diodes suppresses the leakage current by over 3 orders of magnitude compared to those without crosslinking, to below 30 nA cm^-2 at ±2 V. Photocrosslinking of the same film used as the hole-collection layer in PBDTTPD:PC₆₁BM solar cells produces a higher photocurrent density, fill factor, and power conversion efficiency.

Multivalent anions as universal latent electron donors

Electrodes with low work functions are required to efficiently inject electrons into semiconductor devices. However, when the work function drops below about 4 electronvolts, the electrode suffers oxidation in air, which prevents its fabrication in ambient conditions. Here we show that multivalent anions such as oxalate, carbonate and sulfite can act as powerful latent electron donors when dispersed as small ion clusters in a matrix, while retaining their ability to be processed in solution in ambient conditions. The anions in these clusters can even n-dope the semiconductor core of π-conjugated polyelectrolytes that have low electron affinities, through a ground-state doping mechanism that is further amplified by a hole-sensitized or photosensitized mechanism in the device. A theoretical analysis of donor levels of these anions reveals that they are favourably upshifted from ionic lattices by a decrease in the Coulomb stabilization of small ion clusters, and by irreversibility effects. We attain an ultralow effective work function of 2.4 electronvolts with the polyfluorene core. We realize high-performance, solution-processed, white-light-emitting diodes and organic solar cells using polymer electron injection layers with these universal anion donors, demonstrating a general approach to chemically designed and ambient-processed Ohmic electron contacts for semiconductor devices.

Identification of aac(2')-I type b aminoglycoside-modifying enzyme genes in resistant Acinetobacter baumannii

The aim of this study was to investigate the mechanism underlying the drug resistance of Acinetobacter baumannii toward aminoglycosides. A total of 32 A. baumannii strains were identified by molecular identification and subsequently isolated. The isolates were then amplified by polymerase chain reaction to analyze the 9 aminoglycoside-modifying enzyme genes and 7 16S rRNA methylase genes. Five types of aminoglycoside-modifying enzyme genes and 1 type of 16S rRNA methylase gene were detected in the 32 drug-resistant A. baumannii strains. Positive genes included 7 detection modes, of which the all-6-gene-positive mode aac(2')-Ib+aac(3)-I+aac(6')-Ib+ant(3'')-I+aph(3')-I+armA exhibited the largest number of strains (12, 37.5%). The resistance of A. baumannii against aminoglycosides resulted from the presence of 5 types of aminoglycoside-modifying enzyme genes and the 16S rRNA methylase gene armA. This study is the first to isolate the aac(2')-Ib aminoglycoside-modifying enzyme gene from A. baumannii in a domestic clinical setting.

Anomalous-circular photogalvanic effect in a GaAs/AlGaAs two-dimensional electron gas

We have studied the circular photogalvanic effect (CPGE) in a GaAs/AlGaAs two-dimensional electron gas excited by near infrared light at room temperature. The anomalous CPGE observed under normal incidence indicates a swirling current which is realized by a radial spin current via the reciprocal spin-Hall effect. The anomalous CPGE exhibits a cubic cosine dependence on the incidence angle, which is discussed in line with the above interpretation.

Anomalous photogalvanic effect of circularly polarized light incident on the two-dimensional electron gas in Al{x}Ga{1-x}N/GaN heterostructures at room temperature

Under normal incidence of circularly polarized light at room temperature, a charge current with swirly distribution has been observed in the two-dimensional electron gas in Al{0.25}Ga{0.75}N/GaN heterostructures. We believe that this anomalous charge current is produced by a radial spin current via the reciprocal spin Hall effect. It suggests a new way to research the reciprocal spin Hall effect and spin current on the macroscopic scale and at room temperature.

Early pathomorphologic characteristics of the wound track caused by fragments

Soft-tissue wounds were inflicted on the upper parts of both hind legs of dogs by fragments which were shot with a smooth-bore testing rifle. Three impact velocities were used: "high" (1,500 m/s, six dogs), "middle" (1,000 m/s, eight dogs) and "low" (700 m/s, seven dogs). Debridement and gross examination were carried out 6 hours after wounding. The main conclusions were as follows: 1) Grossly, most of the wound tracks were blind. The primary wound track in the "high"-velocity group looked like a funnel in shape. The wound cavity close to the entrance had the largest diameter. 2) The severity of the tissue damage depended on the impact velocity. The higher the velocity, the larger were the wound cavities, the more tissues damaged, and the wider was the area of tissue damage around the cavity. 3) Based on the gross, light microscopy (LM), and electron microscopy (EM) observations it was found that one of the predominant characteristics of the tissue damage caused by fragments was the irregularity or unevenness. This was especially true in the case of the "high"-velocity group. The distribution of tissue damage seemed to be "jumping" or "mosaic." This probably resulted from the irregularity of the energy delivery from fragments with high velocity and low mass. 4) The differences in morphologic characteristics between wound tracks caused by bullets and those by fragments are discussed.