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Rhodes D, Chenet DA, Janicek BE, Nyby C, Lin Y, Jin W, Edelberg D, Mannebach E, Finney N, Antony A, Schiros T, Klarr T, Mazzoni A, Chin M, Chiu YC, Zheng W, Zhang QR, Ernst F, Dadap JI, Tong X, Ma J, Lou R, Wang S, Qian T, Ding H, Osgood RM, Paley DW, Lindenberg AM, Huang PY, Pasupathy AN, Dubey M, Hone J, Balicas L. Engineering the Structural and Electronic Phases of MoTe 2 through W Substitution. Nano Lett 2017; 17:1616-1622. [PMID: 28145719 DOI: 10.1021/acs.nanolett.6b04814] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
MoTe2 is an exfoliable transition metal dichalcogenide (TMD) that crystallizes in three symmetries: the semiconducting trigonal-prismatic 2H- or α-phase, the semimetallic and monoclinic 1T'- or β-phase, and the semimetallic orthorhombic γ-structure. The 2H-phase displays a band gap of ∼1 eV making it appealing for flexible and transparent optoelectronics. The γ-phase is predicted to possess unique topological properties that might lead to topologically protected nondissipative transport channels. Recently, it was argued that it is possible to locally induce phase-transformations in TMDs, through chemical doping, local heating, or electric-field to achieve ohmic contacts or to induce useful functionalities such as electronic phase-change memory elements. The combination of semiconducting and topological elements based upon the same compound might produce a new generation of high performance, low dissipation optoelectronic elements. Here, we show that it is possible to engineer the phases of MoTe2 through W substitution by unveiling the phase-diagram of the Mo1-xWxTe2 solid solution, which displays a semiconducting to semimetallic transition as a function of x. We find that a small critical W concentration xc ∼ 8% stabilizes the γ-phase at room temperature. This suggests that crystals with x close to xc might be particularly susceptible to phase transformations induced by an external perturbation, for example, an electric field. Photoemission spectroscopy, indicates that the γ-phase possesses a Fermi surface akin to that of WTe2.
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Affiliation(s)
- D Rhodes
- National High Magnetic Field Laboratory, Florida State University , Tallahassee, Florida 32310, United States
- Department of Physics, Florida State University , Tallahassee, Florida 32306, United States
| | - D A Chenet
- Department of Mechanical Engineering, Columbia University , New York, New York 10027, United States
| | - B E Janicek
- Department of Materials Science and Engineering, University of Illinois Urbana-Champaign , Urbana, Illinois 61801, United States
| | - C Nyby
- Department of Chemistry, Stanford University , Stanford, California 94305-4401, United States
| | | | | | | | - E Mannebach
- Department of Materials Science and Engineering, Stanford University , Stanford, California 94305, United States
| | - N Finney
- Department of Mechanical Engineering, Columbia University , New York, New York 10027, United States
| | - A Antony
- Department of Mechanical Engineering, Columbia University , New York, New York 10027, United States
| | - T Schiros
- Materials Research Science and Engineering Center, Columbia University , New York, New York 10027 United States
- Department of Science and Mathematics, SUNY Fashion Institute of Technology , New York, New York 10001 United States
| | - T Klarr
- Sensors and Electronic Devices Directorate, United States Army Research Laboratory , Adelphi, Maryland 20723, United States
| | - A Mazzoni
- Sensors and Electronic Devices Directorate, United States Army Research Laboratory , Adelphi, Maryland 20723, United States
| | - M Chin
- Sensors and Electronic Devices Directorate, United States Army Research Laboratory , Adelphi, Maryland 20723, United States
| | - Y-C Chiu
- National High Magnetic Field Laboratory, Florida State University , Tallahassee, Florida 32310, United States
- Department of Physics, Florida State University , Tallahassee, Florida 32306, United States
| | - W Zheng
- National High Magnetic Field Laboratory, Florida State University , Tallahassee, Florida 32310, United States
- Department of Physics, Florida State University , Tallahassee, Florida 32306, United States
| | - Q R Zhang
- National High Magnetic Field Laboratory, Florida State University , Tallahassee, Florida 32310, United States
- Department of Physics, Florida State University , Tallahassee, Florida 32306, United States
| | - F Ernst
- Department of Applied Physics, Stanford University , Stanford, California 94305-4090, United States
- Stanford PULSE Institute, SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States
| | - J I Dadap
- Department of Electrical Engineering, Columbia University , New York, New York 10027, United States
| | - X Tong
- Center for Functional Nanomaterials, Brookhaven National Laboratory , Upton, New York 11973-5000, United States
| | - J Ma
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China
| | - R Lou
- Department of Physics, Renmin University of China , Beijing 100872, China
| | - S Wang
- Department of Physics, Renmin University of China , Beijing 100872, China
| | - T Qian
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China
| | - H Ding
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China
| | - R M Osgood
- Department of Electrical Engineering, Columbia University , New York, New York 10027, United States
| | | | - A M Lindenberg
- Department of Materials Science and Engineering, Stanford University , Stanford, California 94305, United States
- Stanford PULSE Institute, SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States
| | - P Y Huang
- Department of Mechanical Science and Engineering, University of Illinois Urbana-Champaign , Urbana, Illinois 61801, United States
| | | | - M Dubey
- Sensors and Electronic Devices Directorate, United States Army Research Laboratory , Adelphi, Maryland 20723, United States
| | - J Hone
- Department of Mechanical Engineering, Columbia University , New York, New York 10027, United States
| | - L Balicas
- National High Magnetic Field Laboratory, Florida State University , Tallahassee, Florida 32310, United States
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