Enhanced Bonding of Gold Nanoparticles on Oxidized TiO2(110)

We studied the nucleation of gold clusters on TiO2(110) surfaces in three different oxidation states by high-resolution scanning tunneling microscopy. The three TiO2(110) supports chosen were (i) reduced (having bridging oxygen vacancies), (ii) hydrated (having bridging hydroxyl groups), and (iii) oxidized (having oxygen adatoms). At room temperature, gold nanoclusters nucleate homogeneously on the terraces of the reduced and oxidized supports, whereas on the hydrated TiO2(110) surface, clusters form preferentially at the step edges. From interplay with density functional theory calculations, we identified two different gold-TiO2(110) adhesion mechanisms for the reduced and oxidized supports. The adhesion of gold clusters is strongest on the oxidized support, and the implications of this finding for catalytic applications are discussed.

Electric-field-effect modulation of the transition temperature, mobile carrier density, and in-plane penetration depth of NdBa2Cu3O7-delta thin films

We explore the relationship between the critical temperature T(c), the mobile areal carrier density n(2D), and the zero-temperature magnetic in-plane penetration depth lambda(ab)(0) in very thin underdoped NdBa(2)Cu(3)O(7-delta) films near the superconductor to insulator transition using the electric-field-effect technique. Having established consistency with a Kosterlitz-Thouless transition, we observe that T(KT) depends linearly on n(2D), the signature of a quantum superconductor to insulator transition in two dimensions with znu(over)=1, where z is the dynamic and nu is the critical exponent of the in-plane correlation length.

Electrostatic tuning of the hole density in NdBa2Cu3O(7-delta) films and its effect on the Hall response

We have used the ferroelectric field effect in heterostructures based on superconducting NdBa2-Cu(3)O(7-delta) and ferroelectric Pb(Zr0.2Ti0.8)O3 to electrostatically modulate in a reversible and nonvolatile fashion the hole carrier density of the superconducting layer. Reversing the ferroelectric polarization induces a constant relative change in the resistivity and Hall constant of 9% and 6%, respectively, at all temperatures above the superconducting transition. The cotangent of the Hall angle displays a T2 dependence with a slope that increases as the carrier density is reduced.