Photocurrent enhancement in hybrid nanocrystal quantum-dot p-i-n photovoltaic devices

We fabricate a hybrid nanocrystal quantum-dot patterned p-i-n structure that utilizes nonradiative energy transfer from highly absorbing colloidal nanocrystal quantum dots to a patterned semiconductor slab to demonstrate a sixfold increase of the photocurrent conversion efficiency compared to the bare p-i-n semiconductor device.

Room-temperature exciton storage in elongated semiconductor nanocrystals

The excited state of colloidal nanoheterostructures consisting of a spherical CdSe nanocrystal with an epitaxially attached CdS rod can be perturbed effectively by electric fields. Field-induced fluorescence quenching coincides with a conversion of the excited state species from the bright exciton to a metastable trapped state (dark exciton) characterized by a power-law luminescence decay. The conversion is reversible so that up to 10% of quenched excitons recombine radiatively post turn-off of a 1 micro s field pulse, increasing the delayed luminescence by a factor of 80. Excitons can be stored for up to 10(5) times the natural lifetime, opening up applications in optical memory elements.

Wave function engineering in elongated semiconductor nanocrystals with heterogeneous carrier confinement

We explore two routes to wave function engineering in elongated colloidal CdSe/CdS quantum dots, providing deep insight into the intrinsic physics of these low-dimensional heterostructures. Varying the aspect ratio of the nanoparticle allows control over the electron-hole overlap (radiative rate), and external electric fields manipulate the interaction between the delocalized electron and the localized hole. In agreement with theory, this leads to an exceptional size dependent quantum confined Stark effect with field induced intensity modulations, opening applications as electrically switchable single photon sources.

The effect of nanocrystal surface structure on the luminescence properties: Photoemission study of HF-etched InP nanocrystals

InP nanocrystals with narrow size distribution and mean particle diameter tunable from approximately 2 up to approximately 7 nm were synthesized via the dehalosilylation reaction between InCl3 and tris(trimethylsilyl)phosphine. Specific capping of the nanocrystal surface with a shell of organic ligands protects the nanocrystals from oxidation and provides solubility of the particles in various organic solvents. InP nanocrystals with enhanced photoluminescence (PL) efficiency were obtained from the initial nanocrystals by photoassisted etching of the nanocrystal surface with HF. The resulting PL quantum efficiency of InP nanocrystals dispersed in n-butanol is about three orders of magnitude higher when compared to the nonetched InP samples and approaches approximately 40% at room temperature. High-resolution photoelectron spectroscopy with the use of synchrotron radiation was applied to reveal the changes of the nanocrystal surface responsible for the dramatic improvement of the PL efficiency. The analysis of high-resolution P 2p core-level spectra confirmed significant changes of the nanocrystal surface structure induced by the postpreparative treatments and allowed us to propose the description of the etching mechanism. In the nonetched InP nanocrystals, some surface P atoms generate energy states located inside the band gap which provide nonradiative recombination pathways. Photoassisted treatment of InP nanocrystals with HF results in selective removal of these phosphorous atoms from the nanocrystal surface. The reconstructed surface of the etched InP nanocrystals is terminated mainly with In atoms and is efficiently passivated with tri-n-octylphosphine oxide ligands.

Polarized-Light-Emitting Quantum-Rod Diodes

For the first time, polarized-light-emitting quantum-rod diodes have been successfully produced, using thin layers of quantum rods oriented by a rubbing technique. Diode emission at 620 nm with a luminance efficiency of 0.65 Cd A^-1 and an external quantum efficiency of 0.49 % is obtained.

Inside Front Cover: Polarized-Light-Emitting Quantum-Rod Diodes (Adv. Mater. 11/2005)

Polarized-light-emitting quantum-rod diodes have been successfully produced using thin layers of quantum rods oriented by a rubbing technique, as shown on the inside cover. Hikmet and co-workers report on p. 1436 that diode emission at 620 nm with a luminance efficiency of 0.65 cd A^-1 and an external quantum efficiency of 0.49 % is obtained. Light emitted polarized parallel to the long axis of the rods is 1.5 times more intense than that polarized perpendicular to the rods.

Monitoring surface charge movement in single elongated semiconductor nanocrystals

We demonstrate a universal correlation between the spectral linewidth and position of the excitonic transition in the spectral jitter observed from single elongated colloidal quantum dots. Breaking the symmetry of electron and hole confinement as well as of the spatial directions for surface charge diffusion enables us to microscopically track meandering surface charges, providing a novel probe of the particle's nanoenvironment. Spectral diffusion exhibits only a weak temperature dependence, which allows us to uncover the single particle homogeneous linewidth of 50 meV at room temperature.