Real-time characterization of uptake kinetics of glioblastoma vs. astrocytes in 2D cell culture using microelectrode array

Extracellular measurement of uptake/release kinetics and associated concentration dependencies provides mechanistic insight into the underlying biochemical processes. Due to the recognized importance of preserving the natural diffusion processes within the local microenvironment, measurement approaches which provide uptake rate and local surface concentration of adherent cells in static media are needed. This paper reports a microelectrode array device and a methodology to measure uptake kinetics as a function of cell surface concentration in adherent 2D cell cultures in static fluids. The microelectrode array simultaneously measures local concentrations at five positions near the cell surface in order to map the time-dependent concentration profile which in turn enables determination of surface concentrations and uptake rates, via extrapolation to the cell plane. Hydrogen peroxide uptake by human astrocytes (normal) and glioblastoma multiforme (GBM43, cancer) was quantified for initial concentrations of 20 to 500 μM over time intervals of 4000 s. For both cell types, the overall uptake rate versus surface concentration relationships exhibited non-linear kinetics, well-described by a combination of linear and Michaelis-Menten mechanisms and in agreement with the literature. The GBM43 cells showed a higher uptake rate over the full range of concentrations, primarily due to a larger linear component. Diffusion-reaction models using the non-linear parameters and standard first-order relationships are compared. In comparison to results from typical volumetric measurements, the ability to extract both uptake rate and surface concentration in static media provides kinetic parameters that are better suited for developing reaction-diffusion models to adequately describe behavior in more complex culture/tissue geometries. The results also highlight the need for characterization of the uptake rate over a wider range of cell surface concentrations in order to evaluate the potential therapeutic role of hydrogen peroxide in cancerous cells.

Evidence of Universal Temperature Scaling in Self-Heated Percolating Networks

During routine operation, electrically percolating nanocomposites are subjected to high voltages, leading to spatially heterogeneous current distribution. The heterogeneity implies localized self-heating that may (self-consistently) reroute the percolation pathways and even irreversibly damage the material. In the absence of experiments that can spatially resolve the current distribution and a nonlinear percolation model suitable to interpret them, one relies on empirical rules and safety factors to engineer these materials. In this paper, we use ultrahigh resolution thermo-reflectance imaging, coupled with a new imaging processing technique, to map the spatial distribution ΔT(x, y; I) and histogram f(ΔT) of temperature rise due to self-heating in two types of 2D networks (percolating and copercolating). Remarkably, we find that the self-heating can be described by a simple two-parameter Weibull distribution, even under voltages high enough to reconfigure the percolation pathways. Given the generality of the phenomenological argument supporting the distribution, other percolating networks are likely to show similar stress distribution in response to sufficiently large stimuli. Furthermore, the spatial evolution of the self-heating of network was investigated by analyzing the spatial distribution and spatial correlation, respectively. An estimation of degree of hotspot clustering reveals a mechanism analogous to crystallization physics. The results should encourage nonlinear generalization of percolation models necessary for predictive engineering of nanocomposite materials.

Single-Layer Graphene as a Barrier Layer for Intense UV Laser-Induced Damages for Silver Nanowire Network

Single-layer graphene (SLG) has been proposed as the thinnest protective/barrier layer for wide applications involving resistance to oxidation, corrosion, atomic/molecular diffusion, electromagnetic interference, and bacterial contamination. Functional metallic nanostructures have lower thermal stability than their bulk forms and are therefore susceptible to high energy photons. Here, we demonstrate that SLG can shield metallic nanostructures from intense laser radiation that would otherwise ablate them. By irradiation via a UV laser beam with nanosecond pulse width and a range of laser intensities (in millions of watt per cm(2)) onto a silver nanowire network, and conformally wrapping SLG on top of the nanowire network, we demonstrate that graphene "extracts and spreads" most of the thermal energy away from nanowire, thereby keeping it damage-free. Without graphene wrapping, the radiation would fragment the wires into smaller pieces and even decompose them into droplets. A systematic molecular dynamics simulation confirms the mechanism of SLG shielding. Consequently, particular damage-free and ablation-free laser-based nanomanufacturing of hybrid nanostructures might be sparked off by application of SLG on functional surfaces and nanofeatures.

Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors

The effect of diameter variation on electrical characteristics of long-channel InAs nanowire metal-oxide-semiconductor field-effect transistors is experimentally investigated. For a range of nanowire diameters, in which significant band gap changes are observed due to size quantization, the Schottky barrier heights between source/drain metal contacts and the semiconducting nanowire channel are extracted considering both thermionic emission and thermally assisted tunneling. Nanowires as small as 10 nm in diameter were used in device geometry in this context. Interestingly, while experimental and simulation data are consistent with a band gap increase for decreasing nanowire diameter, the experimentally determined Schottky barrier height is found to be around 110 meV irrespective of the nanowire diameter. These observations indicate that for nanowire devices the density of states at the direct conduction band minimum impacts the so-called branching point. Our findings are thus distinctly different from bulk-type results when metal contacts are formed on three-dimensional InAs crystals.

Interface studies of N2 plasma-treated ZnSnO nanowire transistors using low-frequency noise measurements

Due to the large surface-to-volume ratio of nanowires, the quality of nanowire-insulator interfaces as well as the nanowire surface characteristics significantly influence the electrical characteristics of nanowire transistors (NWTs). To improve the electrical characteristics by doping or post-processing, it is important to evaluate the interface characteristics and stability of NWTs. In this study, we have synthesized ZnSnO (ZTO) nanowires using the chemical vapor deposition method, characterized the composition of ZTO nanowires using x-ray photoelectron spectroscopy, and fabricated ZTO NWTs. We have characterized the current-voltage characteristics and low-frequency noise of ZTO NWTs in order to investigate the effects of interface states on subthreshold slope (SS) and the noise before and after N2 plasma treatments. The as-fabricated device exhibited a SS of 0.29 V/dec and Hooge parameter of ~1.20 × 10(-2). Upon N2 plasma treatment with N2 gas flow rate of 40 sccm (20 sccm), the SS improved to 0.12 V/dec (0.21 V/dec) and the Hooge parameter decreased to ~4.99 × 10(-3) (8.14 × 10(-3)). The interface trap densities inferred from both SS and low-frequency noise decrease upon plasma treatment, with the highest flow rate yielding the smallest trap density. These results demonstrate that the N2 plasma treatment decreases the interface trap states and defects on ZTO nanowires, thereby enabling the fabrication of high-quality nanowire interfaces.

Wavelength-dependent absorption in structurally tailored randomly branched vertical arrays of InSb nanowires

Arrays of semiconductor nanowires are of potential interest for applications including photovoltaic devices and IR detectors/imagers. While nominally uniform arrays have typically been studied, arrays containing nanowires with multiple diameters and/or random distributions of diameters could allow tailoring of the photonic properties of the arrays. In this Letter, we demonstrate the growth and optical properties of randomly branched InSb nanowire arrays. The structure mentioned can be approximated as three vertically stacked regions, with average diameters of 20, 100, and 150 nm within the respective layers. Reflectance and transmittance measurements on structures with different average nanowire lengths have been performed over the wavelength range of 300-2000 nm, and absorbance has been calculated from these measurements. The structures show low reflectance over the visible and IR regions and wavelength-dependent absorbance in the IR region. A model considering the diameter-dependent photonic coupling (at a given wavelength) and random distribution of nanowire diameters within the regions has been developed. The diameter-dependent photonic coupling results in a roll-off in the absorbance spectra at wavelengths well below the bulk cutoff of ∼7 μm, and randomness is observed to broaden the absorbance response. Varying the average diameters would allow tailoring of the wavelength dependent absorption within various layers, which could be employed in photovoltaic devices or wavelength-dependent IR imagers.

Effect of nitrogen plasma on the surface of indium oxide nanowires

The change in the atomic nitrogen concentration on a semiconducting nanowire's surface and the consequent changes in the electrical characteristics of a nanowire transistor were investigated by exposing In(2)O(3) nanowires to nitrogen (N(2)) plasma. After plasma was applied at N(2) flow rates of 20, 40, and 70 sccm with a fixed source power of 50 W, the In(2)O(3) nanowire transistor exhibited changes in the threshold voltage (V(th)), subthreshold slope (SS), and on-current (I(on)). In particular, after treatment at an N(2) flow rate of 40 sccm, V(th) shifted positively by ~2.3 V, the SS improved by ~0.24 V/dec, and I(on) increased by ~0.8 μA on average. The changes are attributed to the combination of nitrogen ions produced by the plasma with oxygen vacancies or indium interstitials on the nanowires. Optimization of the plasma treatment conditions is expected to yield desirable device characteristics by a simple, nondestructive process.

Role of self-assembled monolayer passivation in electrical transport properties and flicker noise of nanowire transistors

Semiconductor nanowires have achieved great attention for integration in next-generation electronics. However, for nanowires with diameters comparable to the Debye length, which would generally be required for one-dimensional operation, surface states degrade the device performance and increase the low-frequency noise. In this study, single In(2)O(3) nanowire transistors were fabricated and characterized before and after surface passivation with a self-assembled monolayer of 1-octadecanethiol (ODT). Electrical characterization of the transistors shows that device performance can be enhanced upon ODT passivation, exhibiting steep subthreshold slope (~64 mV/dec), near zero threshold voltage (~0.6 V), high mobility (~624 cm(2)/V·s), and high on-currents (~40 μA). X-ray photoelectron spectroscopy studies of the ODT-passivated nanowires indicate that the molecules are bound to In(2)O(3) nanowires through the thiol linkages. Device simulations using a rectangular geometry to represent the nanowire indicate that the improvement in subthreshold slope and positive shift in threshold voltage can be explained in terms of reduced interface trap density and changes in fixed charge density. Flicker (low-frequency, 1/f) noise measurements show that the noise amplitude is reduced following passivation. The interface trap density before and after ODT passivation is profiled throughout the band gap energy using the subthreshold current-voltage characteristics and is compared to the values extracted from the low-frequency noise measurements. The results indicate that self-assembled monolayer passivation is a promising optimization technology for the realization of low-power, low-noise, and fast-switching applications such as logic, memory, and display circuitry.

Control of current saturation and threshold voltage shift in indium oxide nanowire transistors with femtosecond laser annealing

Transistors based on various types of nonsilicon nanowires have shown great potential for a variety of applications, especially for those that require transparency and low-temperature substrates. However, critical requirements for circuit functionality, such as saturated source-drain current and matched threshold voltages of individual nanowire transistors in a way that is compatible with low temperature substrates, have not been achieved. Here we show that femtosecond laser pulses can anneal individual transistors based on In(2)O(3) nanowires, improve the saturation of the source-drain current, and permanently shift the threshold voltage to the positive direction. We applied this technique and successfully shifted the switching threshold voltages of NMOS-based inverters and improved their noise margin, in both depletion and enhancement modes. Our demonstration provides a method to trim the parameters of individual nanowire transistors, and suggests potential for large-scale integration of nanowire-based circuit blocks and systems.

DC modeling and the source of flicker noise in passivated carbon nanotube transistors

DC and intrinsic low-frequency noise properties of p-channel depletion-mode carbon nanotube field effect transistors (CNT-FETs) are investigated. To characterize the intrinsic noise properties, a thin atomic layer deposited (ALD) HfO(2) gate dielectric is used as a passivation layer to isolate CNT-FETs from environmental factors. The ALD HfO(2) gate dielectric in these high-performance top-gated devices is instrumental in attaining hysteresis-free current-voltage characteristics and minimizes low-frequency noise. Under small drain-source voltage, the carriers in the CNT channel are modulated by the gate electrode and the intrinsic 1/f noise is found to be correlated with charge trapping/detrapping from the oxide substrate as expected. When thermionic emission is the dominant carrier transport mechanism in CNT-FETs under large drain-source voltages, the excess 1/f noise is attributed to the noise stemming from metal-CNT Schottky barrier contacts as revealed by the measurements.

Oxygen plasma exposure effects on indium oxide nanowire transistors

In(2)O(3) nanowire transistors are fabricated with and without oxygen plasma exposure of various regions of the nanowire. In two-terminal devices, exposure of the channel region results in an increased conductance of the channel region. For In(2)O(3) nanowire transistors in which the source/drain regions are exposed to oxygen plasma, the mobility, on-off current ratio and subthreshold slope, are improved with respect to those of non-exposed devices. Simulations using a two-dimensional device simulator (MEDICI) show that improved device performance can be quantified in terms of changes in interfacial trap, shifts in fixed charge densities and the corresponding reduction in Schottky barrier height at the contacts.

Device considerations for development of conductance-based biosensors

Design and fabrication of electronic biosensors based on field-effect-transistor (FET) devices require understanding of interactions between semiconductor surfaces and organic biomolecules. From this perspective, we review practical considerations for electronic biosensors with emphasis on molecular passivation effects on FET device characteristics upon immobilization of organic molecules and an electrostatic model for FET-based biosensors.

Electronic transport through ruthenium-based redox-active molecules in metal-molecule-metal nanogap junctions

Electronic transport through ruthenium-based redox-active organometallic molecules is measured by self-assembling diruthenium(III) tetra(2-anilinopyridinate)-di(4-thiolphenylethynyl) (trans-Ru2(ap)4(C'CC6H4S-)2 (A) and trans- Ru2(ap)4((C'CC6H4)2S-)2 (B) molecules in nanogap molecular junctions. Voltage sweeps at a high scan rate show low bias current peaks (at +/-0.35 +/- 0.05 V for A and +/-0.27 +/- 0.05 V for B), which change to plateaus in slow bias scans and a second conductance peak at approximately +/-1.05 +/- 0.15 V. The peaks/plateaus are not observed in the return bias sweeps, possibly due to charge storage in the molecules. The energy states for the molecular orbitals of these molecules as estimated from the conductance peaks are in close agreement with the respective energy values from voltammetric measurements in solution.

Electrical detection of the biological interaction of a charged peptide via gallium arsenide junction-field-effect transistors

GaAs junction-field-effect transistors (JFETs) are utilized to achieve label-free detection of biological interaction between a probe transactivating transcriptional activator (TAT) peptide and the target trans-activation-responsive (TAR) RNA. The TAT peptide is a short sequence derived from the human immunodeficiency virus-type 1 TAT protein. The GaAs JFETs are modified with a mixed adlayer of 1-octadecanethiol (ODT) and TAT peptide, with the ODT passivating the GaAs surface from polar ions in physiological solutions and the TAT peptide providing selective binding sites for TAR RNA. The devices modified with the mixed adlayer exhibit a negative pinch-off voltage (V(P)) shift, which is attributed to the fixed positive charges from the arginine-rich regions in the TAT peptide. Immersing the modified devices into a TAR RNA solution results in a large positive V(P) shift (>1 V) and a steeper subthreshold slope ( approximately 80 mVdecade), whereas "dummy" RNA induced a small positive V(P) shift ( approximately 0.3 V) without a significant change in subthreshold slopes ( approximately 330 mVdecade). The observed modulation of device characteristics is analyzed with analytical modeling and two-dimensional numerical device simulations to investigate the electronic interactions between the GaAs JFETs and biological molecules.

Mixed adlayer of alkanethiol and peptide on GaAs(100): quantitative characterization by X-ray photoelectron spectroscopy

Homogeneous and mixed adlayers composed of an alkanethiol (1-octadecanethiol, ODT) and a peptide (CGISYGRKKRRQRRR) on GaAs(100) were formed in two different solvent systems: phosphate-buffered saline (PBS) and N,N-dimethylformamide (DMF). The chemical composition of each adlayer was characterized by X-ray photoelectron spectroscopy (XPS). The data showed that the makeup of the adlayer and its stability largely depends on the solvent used. Angle-resolved XPS also revealed that the adlayer thickness and tilt angles were different from values obtained from ellipsometry measurements and vastly varied between the two solvents used. The coverage data extracted from the XPS measurements indicated that homogeneous adlayers of peptide in PBS buffer form a multilayered film. Homogeneous alkanethiol adlayers exhibited monolayer coverage under all solvent treatments. Coadsorbed layers containing both alkanethiol and peptide have fractional monolayer coverage in both solvents.

Transparent active matrix organic light-emitting diode displays driven by nanowire transistor circuitry

Optically transparent, mechanically flexible displays are attractive for next-generation visual technologies and portable electronics. In principle, organic light-emitting diodes (OLEDs) satisfy key requirements for this application-transparency, lightweight, flexibility, and low-temperature fabrication. However, to realize transparent, flexible active-matrix OLED (AMOLED) displays requires suitable thin-film transistor (TFT) drive electronics. Nanowire transistors (NWTs) are ideal candidates for this role due to their outstanding electrical characteristics, potential for compact size, fast switching, low-temperature fabrication, and transparency. Here we report the first demonstration of AMOLED displays driven exclusively by NW electronics and show that such displays can be optically transparent. The displays use pixel dimensions suitable for hand-held applications, exhibit 300 cd/m2 brightness, and are fabricated at temperatures suitable for integration on plastic substrates.

Probing molecules in integrated silicon-molecule-metal junctions by inelastic tunneling spectroscopy

Molecular electronics has drawn significant attention for nanoelectronic and sensing applications. A hybrid technology where molecular devices are integrated with traditional semiconductor microelectronics is a particularly promising approach for these applications. Key challenges in this area include developing devices in which the molecular integrity is preserved, developing in situ characterization techniques to probe the molecules within the completed devices, and determining the physical processes that influence carrier transport. In this study, we present the first experimental report of inelastic electron tunneling spectroscopy of integrated metal-molecule-silicon devices with molecules assembled directly to silicon contacts. The results provide direct experimental confirmation that the chemical integrity of the monolayer is preserved and that the molecules play a direct role in electronic conduction through the devices. Spectra obtained under varying measurement conditions show differences related to the silicon electrode, which can provide valuable information about the physics influencing carrier transport in these molecule/Si hybrid devices.

Role of molecular surface passivation in electrical transport properties of InAs nanowires

The existence of large densities of surface states on InAs pins the surface Fermi level above the conduction band and also degrades the electron mobility in thin films and nanowires. Field effect transistors have been fabricated and characterized in the "as fabricated" state and after surface passivation with 1-octadecanethiol (ODT). Electrical characterization of the transistors shows that the subthreshold slope and electron mobility in devices passivated with ODT are superior to the respective values in unpassivated devices. An X-ray photoelectron spectroscopy study of ODT passivated undoped InAs nanowires indicates that sulfur from ODT is bonded to In on the InAs nanowires. Simulations using a two-dimensional device simulator (MEDICI) show that the improvements in device performance after ODT passivation can be quantified in terms of a decrease of interface trap electron donor states, shifts in fixed interfacial charge, and changes in body and surface mobilities.

Spectroscopic properties of colloidal indium phosphide quantum wires

Colloidal InP quantum wires are grown by the solution-liquid-solid (SLS) method, and passivated with the traditional quantum dots surfactants 1-hexadecylamine and tri-n-octylphosphine oxide. The size dependence of the band gaps in the wires are determined from the absorption spectra, and compared to other experimental results for InP quantum dots and wires, and to the predictions of theory. The photoluminescence behavior of the wires is also investigated. Efforts to enhance photoluminescence efficiencies through photochemical etching in the presence of HF result only in photochemical thinning or photooxidation, without a significant influence on quantum-wire photoluminescence. However, photooxidation produces residual dot and rod domains within the wires, which are luminescent. The results establish that the quantum-wire band gaps are weakly influenced by the nature of the surface passivation and that colloidal quantum wires have intrinsically low photoluminescence efficiencies.

Assemblies of carbon nanotubes and unencapsulated sub-10-nm gold nanoparticles

The development of assemblies consisting of unencapsulated, sub-10-nm gold particles attached to individual carbon nanotubes (CNTs) with diameters of 2 nm is described. The assemblies are formed on the surface of a porous anodic alumina (PAA) template on which the CNTs (single- or double-walled) are grown by plasma-enhanced chemical vapor deposition. The Au nanoparticles are formed through an indirect evaporation technique using a silicon nitride membrane mask, and diffuse along the PAA surface into the regions containing CNTs. The nanoparticles bind relatively strongly to the CNTs, as indicated by observations of nanoparticles that are suspended over pores or that move along with the CNTs. This approach may provide a new method to functionalize CNTs for chemical or biological sensing and fundamental studies of nanoscale contacts to CNTs.

Electrical readouts of single and few molecule systems in metal-molecule-metal device structures

Electrical conduction through molecular junctions are measured in different local environments through two test beds that are ideal for single/few molecule and molecular monolayer systems. A technique has been developed to realize Au films with approximately 1.5 A surface roughness comparable to the best available techniques and suitable for formation of patterned device structures. The technique utilizes room temperature e-beam evaporated Au films over oxidized Si substrates silanized with (3-mercaptopropyl)trimethoxysilane (MPTMS). The lateral (single/few molecule) and vertical (many molecules) device structures are both enabled by the process for realizing ultraflat Au layer. Lateral metal-molecule-metal (M-M-M) device structures are fabricated by forming pairs of Au electrodes with nanometer separation (nano-gap) through an electromigration-induced break-junction (EIBJ) technique at room temperature and conductivity measurements are carried out for dithiol functionalized single molecules. We have used the flat Au layer (using the current technique) as the bottom contact in vertical M-M-M device structures. Here, molecular self-assembly are formed on the Au surface, and patterned (20 x 20 microm2) top Au contacts were successfully transferred on to the device using a stamping technique (where the Au is deposited on a polydimethylsiloxane (PDMS) pad and following a physical contact on the thiolated Au layer). The single molecular property of XYL, a highly conductive molecule and many molecular property of HS-C9-SH, an insulating molecule in its molecular monolayer form are measured. Observation of enhanced conduction following molecular deposition, and comparison of conductance-voltage characteristics to those predicted theoretically, confirms the success of trapping single/few molecules in the nano-gap. The observed approximately 10(2) less conductance through the molecular monolayer of HS-C9-SH compared to the estimation of a linear sum of single molecule conductances over large area indicate that either all the molecules are not in physical contact with the top stamping electrode or electrode-molecule coupling has a less broadening in presence of it own environment or both.

Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

The development of optically transparent and mechanically flexible electronic circuitry is an essential step in the effort to develop next-generation display technologies, including 'see-through' and conformable products. Nanowire transistors (NWTs) are of particular interest for future display devices because of their high carrier mobilities compared with bulk or thin-film transistors made from the same materials, the prospect of processing at low temperatures compatible with plastic substrates, as well as their optical transparency and inherent mechanical flexibility. Here we report fully transparent In(2)O(3) and ZnO NWTs fabricated on both glass and flexible plastic substrates, exhibiting high-performance n-type transistor characteristics with approximately 82% optical transparency. These NWTs should be attractive as pixel-switching and driving transistors in active-matrix organic light-emitting diode (AMOLED) displays. The transparency of the entire pixel area should significantly enhance aperture ratio efficiency in active-matrix arrays and thus substantially decrease power consumption.

Lithography-free in situ Pd contacts to templated single-walled carbon nanotubes

We report a metalization technique for electrically addressing templated vertical single-walled carbon nanotubes (SWNTs) using in situ palladium (Pd) nanowires. SWNTs are synthesized from an embedded catalyst in a modified porous anodic alumina (PAA) template. Pd is electrodeposited into the template to form nanowires that grow from an underlying conductive layer beneath the PAA and extend to the initiation sites of the SWNTs within each pore. In this way, individual vertical channels of SWNTs are created, each with a vertical Pd nanowire back contact. Further Pd deposition results in annular Pd nanoclusters that form on portions of SWNTs extending onto the PAA surface. Two-terminal electrical characteristics produce linear I-V relationships, indicating ohmic contact in the devices.

Deposition of platinum clusters on surface-modified Tobacco mosaic virus

Nanoscaled Pt conductors were prepared from genetically engineered Tobacco mosaic virus (TMV) templates through Pt cluster deposition on the outer surface of the TMV. Pt clusters were synthesized and deposited on the engineered TMV with surface-exposed cysteine via the in situ mineralization of hexachloroplatinate anions. This deposition was driven by the specific binding between thiols and the solid metal clusters. In addition, Pt-thiolate adducts are suggested to form on the engineered TMV in aqueous solutions that work as nucleation sites for the formation of the Pt clusters. The specific binding between Pt clusters and the engineered TMV template was investigated using UV/vis spectrophotometry and quartz crystal microbalance (QCM) analysis. The electric conductance of Pt-deposited TMV was greater than that of the uncoated TMV virion particles. This result suggests the application of metal cluster-deposited engineered TMV in future electrical devices such as rapid response sensors.

Low operating voltage single ZnO nanowire field-effect transistors enabled by self-assembled organic gate nanodielectrics

The development of nanowire transistors enabled by appropriate dielectrics is of great interest for flexible electronic and display applications. In this study, nanowire field-effect transistors (NW-FETs) composed of individual ZnO nanowires are fabricated using a self-assembled superlattice (SAS) as the gate insulator. The 15-nm SAS film used in this study consists of four interlinked layer-by-layer self-assembled organic monolayers and exhibits excellent insulating properties with a large specific capacitance, 180 nF/cm2, and a low leakage current density, 1 x 10(-8) A/cm2. SAS-based ZnO NW-FETs display excellent drain current saturation at Vds = 0.5 V, a threshold voltage (Vth) of -0.4 V, a channel mobility of approximately 196 cm2/V s, an on-off current ratio of approximately 10(4), and a subthreshold slope of 400 mV/dec. For comparison, ZnO NW-FETs are also fabricated using 70-nm SiO2 as the gate insulator. Implementation of the SAS gate dielectric reduces the NW-FET operating voltage dramatically with more than 1 order of magnitude enhancement of the on-current. These results strongly indicate that SAS-based ZnO NW-FETs are promising candidates for future flexible display and logic technologies.