Efficient growth and characterization of one-dimensional transition metal tellurides inside carbon nanotubes

Atomically thin one-dimensional (1D) van der Waals wires of transition metal monochalocogenides (TMMs) have been anticipated as promising building blocks for integrated nanoelectronics. While reliable production of TMM nanowires has eluded scientists over the past few decades, we finally demonstrated a bottom-up fabrication of MoTe nanowires inside carbon nanotubes (CNTs). Still, the current synthesis method is based on vacuum annealing of reactive MoTe₂, and limits access to a variety of TMMs. Here we report an expanded framework for high-yield synthesis of the 1D tellurides including WTe, an previously unknown family of TMMs. Experimental and theoretical analyses revealed that the choice of suitable metal oxides as a precursor provides a useful yield for their characterization. These TMM nanowires exhibit a significant optical absorption in the visible-light region. More important, electronic properties of CNTs can be tuned by encapsulating different TMM nanowires.

Changing the Phosphorus Allotrope from a Square Columnar Structure to a Planar Zigzag Nanoribbon by Increasing the Diameter of Carbon Nanotube Nanoreactors

Elemental phosphorus nanostructures are notorious for a large number of allotropes, which limits their usefulness as semiconductors. To limit this structural diversity, we synthesize selectively quasi-1D phosphorus nanostructures inside carbon nanotubes (CNTs) that act both as stable templates and nanoreactors. Whereas zigzag phosphorus nanoribbons form preferably in CNTs with an inner diameter exceeding 1.4 nm, a previously unknown square columnar structure of phosphorus is observed to form inside narrower nanotubes. Our findings are supported by electron microscopy and Raman spectroscopy observations as well as ab initio density functional theory calculations. Our computational results suggest that square columnar structures form preferably in CNTs with an inner diameter around 1.0 nm, whereas black phosphorus nanoribbons form preferably inside CNTs with a 4.1 nm inner diameter, with zigzag nanoribbons energetically favored over armchair nanoribbons. Our theoretical predictions agree with the experimental findings.

Degenerately Doped Transition Metal Dichalcogenides as Ohmic Homojunction Contacts to Transition Metal Dichalcogenide Semiconductors

In search of an improved strategy to form low-resistance contacts to MoS₂ and related semiconducting transition metal dichalcogenides, we use ab initio density functional electronic structure calculations in order to determine the equilibrium geometry and electronic structure of MoO₃/MoS₂ and MoO₂/MoS₂ bilayers. Our results indicate that, besides a rigid band shift associated with charge transfer, the presence of molybdenum oxide modifies the electronic structure of MoS₂ very little. We find that the charge transfer in the bilayer provides a sufficient degree of hole doping to MoS₂, resulting in a highly transparent contact region.

Effect of Net Charge on the Relative Stability of 2D Boron Allotropes

We study the effect of electron doping on the bonding character and stability of two-dimensional (2D) structures of elemental boron, called borophene, which is known to form many stable allotropes. Our ab initio calculations for the neutral system reveal previously unknown stable 2D ϵ-B and ω-B structures. We find that the chemical bonding characteristic in this and other boron structures is strongly affected by extra charge. Beyond a critical degree of electron doping, the most stable allotrope changes from ϵ-B to a buckled honeycomb structure. Additional electron doping, mimicking a transformation of boron to carbon, causes a gradual decrease in the degree of buckling of the honeycomb lattice that can be interpreted as piezoelectric response. Net electron doping can be achieved by placing borophene in direct contact with layered electrides such as Ca₂N. We find that electron doping can be doubled by changing from the B/Ca₂N bilayer to the Ca₂N/B/Ca₂N sandwich geometry.

Microscopic Mechanism of the Helix-to-Layer Transformation in Elemental Group VI Solids

We study the conversion of bulk Se and Te, consisting of intertwined a helices, to structurally very dissimilar, atomically thin two-dimensional (2D) layers of these elements. Our ab initio calculations reveal that previously unknown and unusually stable δ and η 2D allotropes may form in an intriguing multistep process that involves a concerted motion of many atoms at dislocation defects. We identify such a complex reaction path involving zipper-like motion of such dislocations that initiate structural changes. With low activation barriers ≲0.3 eV along the optimum path, the conversion process may occur at moderate temperatures. We find all one-dimensional (1D) and 2D chalcogen structures to be semiconducting.

Chemical and Electronic Repair Mechanism of Defects in MoS2 Monolayers

Using ab initio density functional theory calculations, we characterize changes in the electronic structure of MoS₂ monolayers introduced by missing or additional adsorbed sulfur atoms. We furthermore identify the chemical and electronic function of substances that have been reported to reduce the adverse effect of sulfur vacancies in quenching photoluminescence and reducing electronic conductance. We find that thiol-group-containing molecules adsorbed at vacancy sites may reinsert missing sulfur atoms. In the presence of additional adsorbed sulfur atoms, thiols may form disulfides on the MoS₂ surface to mitigate the adverse effect of defects.

Can CF3-Functionalized La@C60 Be Isolated Experimentally and Become Superconducting?

Superconducting behavior even under harsh ambient conditions is expected to occur in La@C₆₀ if it could be isolated from the primary metallofullerene soot when functionalized by CF₃ radicals. We use ab initio density functional theory calculations to compare the stability and electronic structure of C₆₀ and the La@C₆₀ endohedral metallofullerene to their counterparts functionalized by CF₃. We found that CF₃ radicals favor binding to C₆₀ and La@C₆₀ and have identified the most stable isomers. Structures with an even number m of radicals are energetically preferred for C₆₀ and structures with odd m for La@C₆₀ due to the extra charge on the fullerene. This is consistent with a wide HOMO-LUMO gap in La@C₆₀(CF₃)_m with odd m, causing extra stabilization in the closed-shell electronic configuration. CF₃ radicals are both stabilizing agents and molecular separators in a metallic crystal, which could increase the critical temperature for superconductivity.

Optimizing Charge Injection across Transition Metal Dichalcogenide Heterojunctions: Theory and Experiment

In search of an improved strategy to form low-resistance contacts to semiconducting transition metal dichalcogenides, we combine ab initio density functional electronic structure calculations for an NbSe₂/WSe₂ interface with quantum transport measurements of the corresponding heterojunction between a few-layer WSe₂ semiconductor and a metallic NbSe₂ layer. Our theoretical results suggest that, besides a rigid band shift associated with charge transfer, the presence of NbSe₂ does not modify the electronic structure of WSe₂. Since the two transition metal dichalcogenides are structurally similar and display only a small lattice mismatch, their heterojunction can efficiently transfer charge across the interface. These findings are supported by transport measurements for WSe₂ field-effect transistors with NbSe₂ contacts, which exhibit nearly ohmic behavior and phonon-limited mobility in the hole channel, indicating that the contacts to WSe₂ are highly transparent.

Control of Surface and Edge Oxidation on Phosphorene

Phosphorene is emerging as an important two-dimensional semiconductor, but controlling the surface chemistry of phosphorene remains a significant challenge. Here, we show that controlled oxidation of phosphorene determines the composition and spatial distribution of the resulting oxide. We used X-ray photoemission spectroscopy to measure the binding energy shifts that accompany oxidation. We interpreted these spectra by calculating the binding energy shift for 24 likely bonding configurations, including phosphorus oxides and hydroxides located on the basal surface or edges of flakes. After brief exposure to high-purity oxygen or high-purity water vapor at room temperature, we observed phosphorus in the +1 and +2 oxidation states; longer exposures led to a large population of phosphorus in the +3 oxidation state. To provide insight into the spatial distribution of the oxide, transmission electron microscopy was performed at several stages during the oxidation. We found crucial differences between oxygen and water oxidants: while pure oxygen produced an oxide layer on the van der Waals surface, water oxidized the material at pre-existing defects such as edges or steps. We propose a mechanism based on the thermodynamics of electron transfer to interpret these observations. This work opens a route to functionalize the basal surface or edges of two-dimensional (2D) black phosphorus through site-selective chemical reactions and presents the opportunity to explore the synthesis of 2D phosphorene oxide by oxidation.

Unusually Stable Helical Coil Allotrope of Phosphorus

We have identified an unusually stable helical coil allotrope of phosphorus. Our ab initio density functional theory calculations indicate that the uncoiled, isolated straight one-dimensional chain is equally stable as a monolayer of black phosphorus dubbed phosphorene. The coiling tendency and the attraction between adjacent coil segments add an extra stabilization energy of ∼12 meV/atom to the coil allotrope, similar in value to the ∼16 meV/atom interlayer attraction in bulk black phosphorus. Thus, the helical coil structure is essentially as stable as black phosphorus, the most stable phosphorus allotrope known to date. With an optimum radius of 2.4 nm, the helical coil of phosphorus may fit well and even form inside wide carbon nanotubes.

Two-Dimensional Phosphorus Carbide: Competition between sp(2) and sp(3) Bonding

We propose previously unknown allotropes of phosphorus carbide (PC) in the stable shape of an atomically thin layer. Different stable geometries, which result from the competition between sp(2) bonding found in graphitic C and sp(3) bonding found in black P, may be mapped onto 2D tiling patterns that simplify categorizing of the structures. Depending on the category, we identify 2D-PC structures that can be metallic, semimetallic with an anisotropic Dirac cone, or direct-gap semiconductors with their gap tunable by in-layer strain.

A metallic mosaic phase and the origin of Mott-insulating state in 1T-TaS2

Electron–electron and electron–phonon interactions are two major driving forces that stabilize various charge-ordered phases of matter. In layered compound 1T-TaS₂, the intricate interplay between the two generates a Mott-insulating ground state with a peculiar charge-density-wave (CDW) order. The delicate balance also makes it possible to use external perturbations to create and manipulate novel phases in this material. Here, we study a mosaic CDW phase induced by voltage pulses, and find that the new phase exhibits electronic structures entirely different from that of the original Mott ground state. The mosaic phase consists of nanometre-sized domains characterized by well-defined phase shifts of the CDW order parameter in the topmost layer, and by altered stacking relative to the layers underneath. We discover that the nature of the new phase is dictated by the stacking order, and our results shed fresh light on the origin of the Mott phase in 1T-TaS₂.

In correlated materials, new phases emerge when the balance between many-body interactions is perturbed. Here, Ma et al. induce a mosaic charge-density-wave phase out of Mott insulating state in layered 1T-TaS₂ by voltage pulses, which reveals a dominating role of interlayer stacking order.

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors

We report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no intentional doping as channel materials. We demonstrate that few-layer WSe2 field-effect transistors (FETs) with 2D/2D contacts exhibit low contact resistances of ∼0.3 kΩ μm, high on/off ratios up to >10(9), and high drive currents exceeding 320 μA μm(-1). These favorable characteristics are combined with a two-terminal field-effect hole mobility μFE ≈ 2 × 10(2) cm(2) V(-1) s(-1) at room temperature, which increases to >2 × 10(3) cm(2) V(-1) s(-1) at cryogenic temperatures. We observe a similar performance also in MoS2 and MoSe2 FETs with 2D/2D drain and source contacts. The 2D/2D low-resistance ohmic contacts presented here represent a new device paradigm that overcomes a significant bottleneck in the performance of TMDs and a wide variety of other 2D materials as the channel materials in postsilicon electronics.

The Nature of the Interlayer Interaction in Bulk and Few-Layer Phosphorus

Sensitive dependence of the electronic structure on the number of layers in few-layer phosphorene raises a question about the true nature of the interlayer interaction in so-called "van der Waals (vdW) solids". We performed quantum Monte Carlo calculations and found that the interlayer interaction in bulk black phosphorus and related few-layer phosphorene is associated with a significant charge redistribution that is incompatible with purely dispersive forces and not captured by density functional theory calculations with different vdW corrected functionals. These findings confirm the necessity of more sophisticated treatment of nonlocal electron correlation in total energy calculations.

Structural Transition in Layered As(1-x)P(x) Compounds: A Computational Study

As a way to further improve the electronic properties of group V layered semiconductors, we propose to form in-layer 2D heterostructures of black phosphorus and gray arsenic. We use ab initio density functional theory to optimize the geometry, determine the electronic structure, and identify the most stable allotropes as a function of composition. Because pure black phosphorus and pure gray arsenic monolayers differ in their equilibrium structure, we predict a structural transition and a change in frontier states, including a change from a direct-gap to an indirect-gap semiconductor, with changing composition.

Designing Isoelectronic Counterparts to Layered Group V Semiconductors

In analogy to III-V compounds, which have significantly broadened the scope of group IV semiconductors, we propose a class of IV-VI compounds as isoelectronic counterparts to layered group V semiconductors. Using ab initio density functional theory, we study yet unrealized structural phases of silicon monosulfide (SiS). We find the black-phosphorus-like α-SiS to be almost equally stable as the blue-phosphorus-like β-SiS. Both α-SiS and β-SiS monolayers display a significant, indirect band gap that depends sensitively on the in-layer strain. Unlike 2D semiconductors of group V elements with the corresponding nonplanar structure, different SiS allotropes show a strong polarization either within or normal to the layers. We find that SiS may form both lateral and vertical heterostructures with phosphorene at a very small energy penalty, offering an unprecedented tunability in structural and electronic properties of SiS-P compounds.

Interfacing graphene and related 2D materials with the 3D world

An important prerequisite to translating the exceptional intrinsic performance of 2D materials such as graphene and transition metal dichalcogenides into useful devices precludes their successful integration within the current 3D technology. This review provides theoretical insight into nontrivial issues arising from interfacing 2D materials with 3D systems including epitaxy and ways to accommodate lattice mismatch, the key role of contact resistance and the effect of defects in electrical and thermal transport.

Tiling phosphorene

We present a scheme to categorize the structure of different layered phosphorene allotropes by mapping their nonplanar atomic structure onto a two-color 2D triangular tiling pattern. In the buckled structure of a phosphorene monolayer, we assign atoms in "top" positions to dark tiles and atoms in "bottom" positions to light tiles. Optimum sp3 bonding is maintained throughout the structure when each triangular tile is surrounded by the same number N of like-colored tiles, with 0≤N≤2. Our ab initio density functional calculations indicate that both the relative stability and electronic properties depend primarily on the structural index N. The proposed mapping approach may also be applied to phosphorene structures with nonhexagonal rings and 2D quasicrystals with no translational symmetry, which we predict to be nearly as stable as the hexagonal network.

Spontaneous graphitization of ultrathin cubic structures: a computational study

Results based on ab initio density functional calculations indicate that cubic diamond, boron nitride, and many other cubic structures including rocksalt share a general graphitization tendency in ultrathin films terminated by close-packed (111) surfaces. Whereas such compounds often show an energy preference for cubic rather than layered atomic arrangements in the bulk, the surface energy of layered systems is commonly lower than that of their cubic counterparts. We determine the critical slab thickness for a range of systems, below which a spontaneous conversion from a cubic to a layered graphitic structure occurs, driven by surface energy reduction in surface-dominated structures.

High Stability of Faceted Nanotubes and Fullerenes of Multiphase Layered Phosphorus: A Computational Study

We present a paradigm in constructing very stable, faceted nanotube and fullerene structures by laterally joining nanoribbons or patches of different planar phosphorene phases. Our ab initio density functional calculations indicate that these phases may form very stable, nonplanar joints. Unlike fullerenes and nanotubes obtained by deforming a single-phase planar monolayer at substantial energy penalty, we find faceted fullerenes and nanotubes to be nearly as stable as the planar single-phase monolayers. The resulting rich variety of polymorphs allows us to tune the electronic properties of phosphorene nanotubes and fullerenes not only by the chiral index but also by the combination of different phosphorene phases. In selected phosphorene nanotubes, a metal-insulator transition may be induced by strain or by changing the number of walls.

Graphitic Phase of NaCl. Bulk Properties and Nanoscale Stability

We applied the ab initio approach to evaluate the stability and physical properties of the nanometer-thickness NaCl layered films and found that the rock salt films with a (111) surface become unstable with thickness below 1 nm and spontaneously split to graphitic-like films for reducing the electrostatic energy penalty. The observed sodium chloride graphitic phase displays an uncommon atomic arrangement and exists only as nanometer-thin quasi-two-dimensional films. The graphitic bulk counterpart is unstable and transforms to another hexagonal wurtzite NaCl phase that locates in the negative-pressure region of the phase diagram. It was found that the layers in the graphitic NaCl film are weakly bounded with each other with a binding energy order of 0.1 eV per stoichiometry unit. The electronic band gap of the graphitic NaCl displays an unusual nonmonotonic quantum confinement response.

Phase coexistence and metal-insulator transition in few-layer phosphorene: a computational study

Based on ab initio density functional calculations, we propose γ-P and δ-P as two additional stable structural phases of layered phosphorus besides the layered α-P (black) and β-P (blue) phosphorus allotropes. Monolayers of some of these allotropes have a wide band gap, whereas others, including γ-P, show a metal-insulator transition caused by in-layer strain or changing the number of layers. An unforeseen benefit is the possibility to connect different structural phases at no energy cost. This becomes particularly valuable in assembling heterostructures with well-defined metallic and semiconducting regions in one contiguous layer.

High mobility WSe2 p- and n-type field-effect transistors contacted by highly doped graphene for low-resistance contacts

We report the fabrication of both n-type and p-type WSe2 field-effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts. Our transport measurements reveal intrinsic channel properties including a metal-insulator transition at a characteristic conductivity close to the quantum conductance e(2)/h, a high ON/OFF ratio of >10(7) at 170 K, and large electron and hole mobility of μ ≈ 200 cm(2) V(-1 )s(-1) at 160 K. Decreasing the temperature to 77 K increases mobility of electrons to ∼330 cm(2) V(-1) s(-1) and that of holes to ∼270 cm(2) V(-1) s(-1). We attribute our ability to observe the intrinsic, phonon-limited conduction in both the electron and hole channels to the drastic reduction of the Schottky barriers between the channel and the graphene contact electrodes using IL gating. We elucidate this process by studying a Schottky diode consisting of a single graphene/WSe2 Schottky junction. Our results indicate the possibility to utilize chemically or electrostatically highly doped graphene for versatile, flexible, and transparent low-resistance ohmic contacts to a wide range of quasi-2D semiconductors.

Semiconducting layered blue phosphorus: a computational study

We investigate a previously unknown phase of phosphorus that shares its layered structure and high stability with the black phosphorus allotrope. We find the in-plane hexagonal structure and bulk layer stacking of this structure, which we call "blue phosphorus," to be related to graphite. Unlike graphite and black phosphorus, blue phosphorus displays a wide fundamental band gap. Still, it should exfoliate easily to form quasi-two-dimensional structures suitable for electronic applications. We study a likely transformation pathway from black to blue phosphorus and discuss possible ways to synthesize the new structure.

Phosphorene: an unexplored 2D semiconductor with a high hole mobility

We introduce the 2D counterpart of layered black phosphorus, which we call phosphorene, as an unexplored p-type semiconducting material. Same as graphene and MoS2, single-layer phosphorene is flexible and can be mechanically exfoliated. We find phosphorene to be stable and, unlike graphene, to have an inherent, direct, and appreciable band gap. Our ab initio calculations indicate that the band gap is direct, depends on the number of layers and the in-layer strain, and is significantly larger than the bulk value of 0.31-0.36 eV. The observed photoluminescence peak of single-layer phosphorene in the visible optical range confirms that the band gap is larger than that of the bulk system. Our transport studies indicate a hole mobility that reflects the structural anisotropy of phosphorene and complements n-type MoS2. At room temperature, our few-layer phosphorene field-effect transistors with 1.0 μm channel length display a high on-current of 194 mA/mm, a high hole field-effect mobility of 286 cm(2)/V·s, and an on/off ratio of up to 10(4). We demonstrate the possibility of phosphorene integration by constructing a 2D CMOS inverter consisting of phosphorene PMOS and MoS2 NMOS transistors.

Topologically protected conduction state at carbon foam surfaces: an ab initio study

We report results of ab initio electronic structure and quantum conductance calculations indicating the emergence of conduction at the surface of semiconducting carbon foams. The occurrence of new conduction states is intimately linked to the topology of the surface and not limited to foams of elemental carbon. Our interpretation based on rehybridization theory indicates that conduction in the foam derives from first- and second-neighbor interactions between p∥ orbitals lying in the surface plane, which are related to p⊥ orbitals of graphene. The topologically protected conducting state occurs on bare and hydrogen-terminated foam surfaces and is thus unrelated to dangling bonds. Our results for carbon foam indicate that the conductance behavior may be further significantly modified by surface patterning.

Theoretical investigation of the electronic structure and quantum transport in the graphene-C(111) diamond surface system

We investigate the interaction of a graphene monolayer with the C(111) diamond surface using ab initio density functional theory. To accommodate the lattice mismatch between graphene and diamond, the overlayer deforms into a wavy structure that binds strongly to the diamond substrate. The detached ridges of the wavy graphene overlayer behave electronically as free-standing polyacetylene chains with delocalized π electrons, separated by regions containing only sp(3) carbon atoms covalently bonded to the (111) diamond surface. We performed quantum transport calculations for different geometries of the system to study how the buckling of the graphene layer and the associated bonding to the diamond substrate affect the transport properties. The system displays high carrier mobility along the ridges and a wide transport gap in the direction normal to the ridges. These intriguing, strongly anisotropic transport properties qualify the hybrid graphene-diamond system as a viable candidate for electronic nanodevices.

Formation and properties of selenium double-helices inside double-wall carbon nanotubes: experiment and theory

We report the production of covalently bonded selenium double-helices within the narrow cavity inside double-wall carbon nanotubes. The double-helix structure, characterized by high-resolution transmission electron microscopy and X-ray diffraction, is completely different from the bulk atomic arrangement and may be considered a new structural phase of Se. Supporting ab initio calculations indicate that the observed encapsulated Se double-helices are radially compressed and have formed from free Se atoms or short chains contained inside carbon nanotubes. The calculated electronic structure of Se double-helices is very different from the bulk system, indicating the possibility to develop a new branch of Se chemistry.

Improved carrier mobility in few-layer MoS2 field-effect transistors with ionic-liquid gating

We report the fabrication of ionic liquid (IL)-gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS2. Our transport measurements indicate that the electron mobility μ ≈ 60 cm(2) V(-1) s(-1) at 250 K in IL-gated devices exceeds significantly that of comparable back-gated devices. IL-FETs display a mobility increase from ≈ 100 cm(2) V(-1) s(-1) at 180 K to ≈ 220 cm(2) V(-1) s(-1) at 77 K in good agreement with the true channel mobility determined from four-terminal measurements, ambipolar behavior with a high ON/OFF ratio >10(7) (10(4)) for electrons (holes), and a near ideal subthreshold swing of ≈ 50 mV/dec at 250 K. We attribute the observed performance enhancement, specifically the increased carrier mobility that is limited by phonons, to the reduction of the Schottky barrier at the source and drain electrode by band bending caused by the ultrathin IL dielectric layer.

Optimizing electronic structure and quantum transport at the graphene-Si(111) interface: an ab initio density-functional study

We use ab initio density-functional calculations to determine the interaction of a graphene monolayer with the Si(111) surface. We find that graphene forms strong bonds to the bare substrate and accommodates the 12% lattice mismatch by forming a wavy structure consisting of free-standing conductive ridges that are connected by ribbon-shaped regions of graphene, which bond covalently to the substrate. We perform quantum transport calculations for different geometries to study changes in the transport properties of graphene introduced by the wavy structure and bonding to the Si substrate. Our results suggest that wavy graphene combines high mobility along the ridges with efficient carrier injection into Si in the contact regions.

Nanomechanical energy storage in twisted nanotube ropes

We determine the deformation energetics and energy density of twisted carbon nanotubes and nanotube ropes that effectively constitute a torsional spring. Using ab initio and parametrized density functional calculations, we identify structural changes in these systems and determine their elastic limits. The deformation energy of twisted nanotube ropes contains contributions associated not only with twisting but also with stretching, bending, and compression of individual nanotubes. We quantify these energy contributions and show that their relative role changes with the number of nanotubes in the rope.

Synthesis and transformation of linear adamantane assemblies inside carbon nanotubes

We report the assembly and thermal transformation of linear diamondoid assemblies inside carbon nanotubes. Our calculations and observations indicate that these molecules undergo selective reactions within the narrow confining space of a carbon nanotube. Upon vacuum annealing of adamantane molecules encapsulated in a carbon nanotube, we observe a sharp Raman feature at 1857 cm(-1), which we interpret as a stretching mode of carbon chains formed by thermal conversion of adamantane inside a carbon nanotube. Introduction of pure hydrogen during thermal annealing, however, suppresses the formation of carbon chains and seems to keep adamantane intact.

Formation and stability of cellular carbon foam structures: an ab initio study

We use ab initio density functional calculations to study the formation and structural as well as thermal stability of cellular foamlike carbon nanostructures. These systems with a mixed sp(2)/sp(3) bonding character may be viewed as bundles of carbon nanotubes fused to a rigid contiguous 3D honeycomb structure that can be compressed more easily by reducing the symmetry of the honeycombs. The foam may accommodate the same type of defects as graphene, and its surface may be stabilized by terminating caps. We postulate that the foam may form under nonequilibrium conditions near grain boundaries of a carbon-saturated metal surface.

Helicity in ropes of chiral nanotubes: calculations and observation

Even though isolated defect-free single-wall carbon nanotubes are straight, bundles of chiral single-wall carbon nanotubes are often helical according to our observations using high-resolution electron microscopy. The driving force for the formation of such helices is the energy gain associated with the optimum orientational alignment of neighboring nanotubes. Our total energy calculations allow us to analyze the torsional and bending stress components in helical nanotube ropes and specify under which conditions straight nanotube bundles gain energy upon forming a helix.

Designing electrical contacts to MoS2 monolayers: a computational study

Studying the reason why single-layer molybdenum disulfide (MoS2) appears to fall short of its promising potential in flexible nanoelectronics, we find that the nature of contacts plays a more important role than the semiconductor itself. In order to understand the nature of MoS2/metal contacts, we perform ab initio density functional theory calculations for the geometry, bonding, and electronic structure of the contact region. We find that the most common contact metal (Au) is rather inefficient for electron injection into single-layer MoS2 and propose Ti as a representative example of suitable alternative electrode materials.

Interplay between structural and electronic properties of bundled Mo6S(9-x)I(x) nanowires

Using first principles density functional theory, we investigate the structural, electronic and magnetic properties of isolated and bundled Mo(6)S(9 - x)I(x) nanowires with x = 3, 4.5, and 6. The unit cell of each system contains two Mo(6) octahedra decorated with S and I atoms and two S(3) linkages. Due to the bistability of each sulfur linkage, finite-length nanowires or nanowire bundles exhibit many stable structural minima. We explore the structural stability, elastic behavior and electronic structure at all these minima for each composition x. We find that the axial strain and inter-wire interaction in bundles significantly modify the electronic structure. The most intriguing changes occur in nanowires with x = 4.5 and 6, which change from metal to semiconductor or undergo a magnetic transition upon axially stretching or compressing the nanowires or upon changing the inter-wire separation.

Equilibrium structure of ferrofluid aggregates

We study the equilibrium structure of large but finite aggregates of magnetic dipoles, representing a colloidal suspension of magnetite particles in a ferrofluid. With increasing system size, the structural motif evolves from chains and rings to multi-chain and multi-ring assemblies. Very large systems form single- and multi-wall coils, tubes and scrolls. These structural changes result from a competition between various energy terms, which can be approximated analytically within a continuum model. We also study the effect of external parameters such as magnetic field on the relative stability of these structures. Our results may give insight into experimental data obtained during solidification of ferrofluid aggregates at temperatures where thermal fluctuations become negligible in comparison to inter-particle interactions. These data may also help to experimentally control the aggregation of magnetic particles.

Designing rigid carbon foams

We use ab initio density functional calculations to study the stability, elastic properties and electronic structure of sp(2) carbon minimal surfaces with negative Gaussian curvature, called schwarzites. We focus on two systems with cubic unit cells containing 152 and 200 carbon atoms, which are metallic and very rigid. The porous schwarzite structure allows for efficient and reversible doping by electron donors and acceptors, making it a promising candidate for the next generation of alkali ion batteries. We identify schwarzite structures that act as arrays of interconnected spin quantum dots or become magnetic when doped. We introduce two interpenetrating schwarzite structures that may find their use as the ultimate super-capacitor.

Photoexfoliation of graphene from graphite: an ab initio study

We propose to use ultrashort laser pulses to detach intact graphene monolayers from a graphite surface, one at a time. As suggested by a combination of real-time ab initio time-dependent density functional calculations for electrons with molecular dynamics simulations for ions, this athermal exfoliation process follows exposure to femtosecond laser pulses with a wavelength of 800 nm and the full width at half maximum (FWHM) of 45 fs. Shorter pulses (FWHM=10  fs) with the same wavelength and intensity speed up the exfoliation and cause transient contraction in subsurface layers. Photoexfoliation should be capable of producing intact graphene monolayers free of contaminants and defects at a high rate.