Compositional defects in a MoAlB MAB phase thin film grown by high-power pulsed magnetron sputtering

Various compositional defects such as Mo3Al2B4, Mo4Al3B4, Mo6Al5B6 and Al3Mo, together with MoB MBene, are observed to be coexisting in a MoAlB MAB phase thin film grown at 800 °C by high-power pulsed magnetron sputtering. An overall film composition of Mo0.29Al0.33B0.38 is measured by time-of-flight elastic recoil detection analysis. The concurrent formation of these compositional defects in the MoAlB matrix occurs during the synthesis without using any chemical reagent, and their coexistence with the MAB phase is thermodynamically possible, as elucidated by density functional theory simulations. These defect phases are imaged at the atomic scale by aberration-corrected scanning transmission electron microscopy. A rough estimation of defect populations of 0.073, 0.037, 0.042 and 0.039 nm-1 for Mo3Al2B4, Mo4Al3B4, Mo6Al5B6 and Al3Mo compositional defects, respectively, is performed within the MoAlB matrix. The calculated energies of formation reveal that the Mo4Al3B4 and Mo6Al5B6 defect phases form spontaneously in the MoAlB host matrix, while the energy barrier towards the formation of the metastable Mo3Al2B4 phase is approx. 20 meV per atom. The small magnitude of this barrier is easily overcome during vapor phase condensation, and the surface diffusion of adatoms during deposition leads to local compositional variations and the coexistence of the defect phases in the host matrix. Additionally, at grain boundaries, the presence of MoB MBene is observed, with an interlayer spacing between two Mo2B2 units increasing up to ∼50% compared to the pristine MoAlB phase.

An ab initio investigation of the temperature-dependent energetic barriers towards CrAlB and (Mo,Cr)AlB formation in a metastable synthesis scenario

The orthorhombic CrAlB MAB phase has not been synthesized so far and was shown to be energetically unstable vs. the competing Cr₂AlB₂ phase in previous theoretical reports, which, however, did not explicitly investigate the magnitude of the energetic barrier towards CrAlB formation as a function of temperature. Temperature-dependent Gibbs energies of formation, obtained from density-functional-theory-based lattice dynamics simulations performed in this study, reveal that this barrier is very small (around 10 kJ mol^-1 ≈ 0.008 eV per atom, on average) and may readily be overcome during high-energy synthesis scenarios, likely resulting in metastable phase formation. Furthermore, the electronic structures of MoAlB, a phase synthesized experimentally both in bulk and thin film form, and CrAlB are shown to be similar in direct comparison, with MoAlB exhibiting a higher electronic stability due to a local DOS minimum in proximity to the Fermi level, and quaternary compositions lying between the ternaries. Likewise, bonding characteristics are qualitatively very similar between both phases, with the transition metal-boron bonds being the dominant interaction in the entire unit cell, even though individual B-B bonds are stronger; quantitatively, all interactions are again stronger in MoAlB compared to CrAlB. It is reasonable to assume that, considering the successful synthesis of phase-pure MoAlB and known formation of metastable phases during physical vapor deposition, direct synthesis of metastable CrAlB thin films is possible due to the aforementioned small energy barrier. Furthermore, stability is enhanced upon alloying with Mo as this lowers the energy of formation, with a Mo/Cr ratio of approx. 0.33 sufficient to stabilize the Cr-rich (Mo,Cr)AlB solid solution vs. the primary competing phases, allowing for deposition of Mo-concentration-dependent stable and metastable (Mo,Cr)AlB solid solution phases.

Defects in an orthorhombic MoAlB MAB phase thin film grown at moderate synthesis temperature

Here, we report on atomic scale characterization of various defects in a MoAlB (MAB) phase thin film grown by DC sputtering at a synthesis temperature of 700 °C. Aberration-corrected scanning transmission electron microscopy reveals the formation of an intergrown metastable Mo₃Al₂B₄ phase accompanied by thermally stable 90° twist boundaries, coexisting within the pristine MoAlB matrix. The concurrent formation of these structural defects in the MoAlB matrix can be rationalized based on minute differences in formation enthalpies as shown via density functional theory calculations. The specific structural nature of both the twist boundary and compositional defect (Mo₃Al₂B₄) in a MoAlB matrix is hitherto unreported in literature. Apart from these defects, faceted grain boundaries are observed. In the vicinity of amorphous AlO_x regions, Al is deintercalated and a 2D MoB MBene phase is formed as reported before. Besides these amorphous AlO_x regions, a few nanometer-sized 3D MoB clusters are found. The advancement of aberration-corrected scanning transmission electron microscopy significantly improves characterization from 1D to 3D defects which is important for thin film materials design for the moderate synthesis temperature range. The reported defects might play an important role in the formation of 2D MoB MBenes.

Direct MoB MBene domain formation in magnetron sputtered MoAlB thin films

Two-dimensional (2D) inorganic transition metal boride nanosheets are emerging as promising post-graphene materials in energy research due to their unique properties. State-of-the-art processing strategies are based on chemical etching of bulk material synthesized via solid-state reaction at temperatures above 1000 °C. Here, we report the direct formation of MoB MBene domains in a MoAlB thin film by Al deintercalation from MoAlB in the vicinity of AlO_x regions. Hence, based on these results a straightforward processing pathway for the direct formation of MoB MBene-AlO_x heterostructures without employing chemical etching is proposed here.

Band Gap Tuning in Bismuth Oxide Carbodiimide Bi2O2NCN

Layered bismuth oxides exhibit a broad range of tunable physical properties as a result of their excellent structural versatility which facilitates compositional substitutions at both cationic and anionic positions. Here we expand this family in a new direction through the preparation of the first example of a bismuth-containing oxide carbodiimide, Bi₂O₂NCN, which assumes an extended variant of the anti-ThCr₂Si₂ structure-type adopted by Bi₂O₂ Ch ( Ch = Se or Te) oxide chalcogenides. Electronic structure calculations reveal the title compound to be an indirect band gap semiconductor with a band gap of approximately 1.4 eV, in good agreement with the measured value of 1.8 eV, and intermediate between that of structurally related Bi₂O₂S (1.12 eV) and β-Bi₂O₃ (2.48 eV). Mott-Schottky experiments demonstrate Bi₂O₂NCN to be an n-type semiconductor with a conduction band edge position of -0.37 V vs reversible hydrogen electrode. This study highlights the pseudochalcogenide nature of the ^-N═C═N^- carbodiimide anion, which may be substituted in place of oxide or chalcogenide anions in this and potentially other structural classes as an effective means of electronic tuning.

Insights into exfoliation possibility of MAX phases to MXenes

Chemical exfoliation of MAX phases into two-dimensional (2D) MXenes can be considered as a major breakthrough in the synthesis of novel 2D systems. To gain insight into the exfoliation possibility of MAX phases and to identify which MAX phases are promising candidates for successful exfoliation into 2D MXenes, we perform extensive electronic structure and phonon calculations, and determine the force constants, bond strengths, and static exfoliation energies of MAX phases to MXenes for 82 different experimentally synthesized crystalline MAX phases. Our results show a clear correlation between the force constants and the bond strengths. As the total force constant of an "A" atom contributed from the neighboring atoms is smaller, the exfoliation energy becomes smaller, thus making exfoliation easier. We propose 37 MAX phases for successful exfoliation into 2D Ti2C, Ti3C2, Ti4C3, Ti5C4, Ti2N, Zr2C, Hf2C, V2C, V3C2, V4C3, Nb2C, Nb5C4, Ta2C, Ta5C4, Cr2C, Cr2N, and Mo2C MXenes. In addition, we explore the effect of charge injection on MAX phases. We find that the injected charges, both electrons and holes, are mainly received by the transition metals. This is due to the electronic property of MAX phases that the states near the Fermi energy are mainly dominated by d orbitals of the transition metals. For negatively charged MAX phases, the electrons injected cause swelling of the structure and elongation of the bond distances along the c axis, which hence weakens the binding. For positively charged MAX phases, on the other hand, the bonds become shorter and stronger. Therefore, we predict that the electron injection by electrochemistry or gating techniques can significantly facilitate the exfoliation possibility of MAX phases to 2D MXenes.

Synthesis, Crystal Structure, Magnetic Properties, and Stability of the Manganese-Rich "Mn3AlC" κ Phase

κ-carbides of varying composition, seemingly responsible for age hardening in high-Al steel alloys, have been detected to precipitate both at grain boundaries and in the bulk grain of steels. Herein we report the bulk-phase synthesis of "Mn₃AlC" by arc plasma sintering and rapid solidification. Single crystals have been found suitable for X-ray diffraction using Mo radiation and yield a lattice parameter of a = 3.875(2) Å. We find a mixed occupation of the 1a position by Al and Mn, which, together with the C position being fully occupied, leads to the actual composition Mn_3.1Al_0.9C. Additional energy-dispersive X-ray-scanning electron microscopy measurements support the composition and corroborate the homogeneity. SQUID data collected on the polycrystalline ferromagnetic sample exhibit a Curie temperature of about 295 ± 13 K and a soft magnetic behavior. The small but significant nonstoichiometry on 1a leads to a slightly larger lattice parameter, a higher electron count, and, thus, a lowered density of states at the Fermi level, indicative of increased phase stability.

Interface-enforced complexation between copolymer blocks

Binary diblock copolymers and corresponding ternary miktoarm stars are studied at oil-water interfaces. All polymers contain oil-soluble poly(propylene oxide) PPO, water-soluble poly(dimethylaminoethyl methacrylate) PDMAEMA and/or poly(ethylene oxide) PEO. The features of their Langmuir compression isotherms are well related to the ones of the corresponding homopolymers. Within the Langmuir-trough, PEO-b-PPO acts as the most effective amphiphile compared to the other PPO-containing copolymers. In contrast, the compression isotherms show a complexation of PPO and PDMAEMA for PPO-b-PDMAEMA and the star, reducing their overall amphiphilicity. Such complex formation between the blocks of PPO-b-PDMAEMA is prevented in bulk water but facilitated at the interface. The weakly-interacting blocks of PPO-b-PDMAEMA form a complex due to their enhanced proximity in such confined environments. Scanning force microscopy and Monte Carlo simulations with varying confinement support our results, which are regarded as compliant with the mathematical random walk theorem by Pólya. Finally, the results are expected to be of relevance for e.g. emulsion formulation and macromolecular engineering.