Hopping magnetotransport of the band-gap tuning Cu2Zn(Sn x Ge1-x )Se4 crystals

Resistivity, ρ(T, x), of Cu2Zn(Sn x Ge1-x )Se4 (CZTGeSe) single crystals with x  =  0-1, investigated at temperatures between T ~ 10-320 K, exhibits an activated character within the whole temperature range, attaining a minimum at x  =  0.47. Magnetoresistance (MR) of CZTGeSe with x  =  0.26, 0.47 and 0.64 is positive (pMR) in all measured fields of B up to 20 T at any T between ~40-320 K, whereas MR of samples with x  =  0 and 1 contains a negative contribution (nMR). The dependence of ρ(T) at B  =  0 gives evidence for a nearest-neighbor hopping (NNH) conductivity in high-temperature intervals within T ~ 200-320 K depending on x, followed by the Mott variable-range hopping (VRH) charge transfer with lowering temperature. The pMR law of lnρ(B) [Formula: see text] B (2) is observed in both hopping conductivity regimes above, provided that the nMR contribution is absent or saturated. Analysis of the ρ(T) and MR data has yielded the values of the NNH activation energy and the VRH characteristic temperature, as well as those of the acceptor band width, the acceptor concentration, the localization radii of holes and the density of the localized states (DOS) at the Fermi level. All the parameters above exhibit a systematic non-monotonous dependence on x. Their extremums, lying close to x  =  0.64, correspond to the minimum of a lattice disorder along with the maximum of DOS and of the acceptor concentration, as well as a highest proximity to the metal-insulator transition.

Magneto-Optical Signature of Massless Kane Electrons in Cd_{3}As_{2}

We report on optical reflectivity experiments performed on Cd_{3}As_{2} over a broad range of photon energies and magnetic fields. The observed response clearly indicates the presence of 3D massless charge carriers. The specific cyclotron resonance absorption in the quantum limit implies that we are probing massless Kane electrons rather than symmetry-protected 3D Dirac particles. The latter may appear at a smaller energy scale and are not directly observed in our infrared experiments.

Optical phonons in the kesterite Cu2ZnGeS4 semiconductor: polarized Raman spectroscopy and first-principle calculations

A comprehensive vibrational analysis of the kesterite Cu₂ZnGeS₄ is reported, which includes in-plane rotation polarized Raman scattering measurements from the (1 0 1)-single crystal facet as well as first principle lattice dynamic calculations.

Magnetoresistance of rolled-up Fe3Si nanomembranes

Magnetotransport of individual rolled-up Fe(3)Si nanomembranes is investigated in a broad temperature range from 4.2 K up to 300 K in pulsed magnetic fields up to 55 T. The observed magnetoresistance (MR) has the following pronounced features: (i) MR is negative in the investigated intervals of temperature and magnetic field; (ii) its magnitude increases linearly with the magnetic field in a low-field region and reveals a gradual trend to saturation when the magnetic field increases; (iii) the MR effect becomes more pronounced with increasing temperature. These dependences of MR on the magnetic field and temperature are in line with predictions of the spin-disorder model of the spin-flip s-d interaction assisted with creation or annihilation of magnons, which is expected above a certain critical temperature. Comparison of the MR features in rolled-up and planar samples reveals a substantial increase of the critical temperature in the rolled-up tube, which is attributed to a new geometry and internal strain arising in the rolled-up nanomembranes, influencing the electronic and magnetic properties of the material.

Epitaxial Fe3Si films on GaAs(100) substrates by means of electron beam evaporation

This paper presents results on the preparation, structural, electrical and magnetic properties of Fe(3)Si films as a representative for a Heusler alloy-like compound which are known as half-metallic materials with ferromagnetic behaviour. The films have been prepared by means of ultra-high vacuum (UHV) electron beam evaporation with the aim of achieving epitaxial growth on GaAs(100) substrates. The main focus of this work is the structural characterization of the Fe(3)Si films grown on GaAs by means of high resolution transmission electron microscopy (TEM) to confirm the epitaxial growth. For Fe(3)Si with a composition in the vicinity of stoichiometry an almost lattice-matched growth on GaAs(001) has been observed characterized by a high crystalline quality and a good interface perfection. Besides the studies on cross-sectional samples by TEM data from reflection high energy electron diffraction (RHEED) and x-ray diffraction (XRD) were also included into the discussion. The electrical and magnetic parameters of the films studied are found to be in good agreement with data reported for the best Fe(3)Si molecular beam epitaxy (MBE) layers. As evidenced by x-ray diffraction, transmission electron microscopy, resistivity and magnetic measurements, we find an optimum growth temperature of 280-350 degrees C to obtain ferromagnetic layers with high crystal and interface perfection as well as a high degree of atomic ordering.

Hopping conductivity in CaCu(2)O(3) single crystals

The resistivity, ρ, of the spin-ladder compound CaCu(2)O(3) is investigated between T∼130-450 K. The ρ(T) data measured for [Formula: see text] (along the Cu-O-Cu leg) and [Formula: see text] (along the Cu-O-Cu rungs), ρ(a)(T)>ρ(b)(T), exhibit an activated dependence, similar in both directions and characterized by a nearest-neighbour hopping followed by a variable-range hopping (VRH) regime when T is decreased. A detailed analysis of ρ(T) demonstrates that conventional d-dimensional models of the hopping conductivity, based on the electron localization in disordered systems, cannot interpret the experimental data at any d = 1, 2 or 3, leading to the mismatch of the characteristic energies and/or unphysical values of the characteristic length scales. The observed VRH conductivity law on the low-temperature interval, lnρ∼T(-3/4), contradicts the models above, too. Instead, it is found that this law can be substantiated and the correct matching of the energy and length scales can be found within a model of Fogler et al (2004 Phys. Rev. B 69 035413) by treating CaCu(2)O(3) as a three-dimensional array of quasi-one-dimensional electron crystals.

Superconductivity in CaCuO2 as a result of field-effect doping

Understanding the doping mechanisms in the simplest superconducting copper oxide-the infinite-layer compound ACuO2 (where A is an alkaline earth metal)-is an excellent way of investigating the pairing mechanism in high-transition-temperature (high-Tc) superconductors more generally. Gate-induced modulation of the carrier concentration to obtain superconductivity is a powerful means of achieving such understanding: it minimizes the effects of potential scattering by impurities, and of structural modifications arising from chemical dopants. Here we report the transport properties of thin films of the infinite-layer compound CaCuO2 using field-effect doping. At high hole- and electron-doping levels, superconductivity is induced in the nominally insulating material. Maximum values of Tc of 89 K and 34 K are observed respectively for hole- and electron-type doping of around 0.15 charge carriers per CuO2. We can explore the whole doping diagram of the CuO2 plane while changing only a single electric parameter, the gate voltage.

Field-induced superconductivity in a spin-ladder cuprate

We report on the modulation of the transport properties of thin films, grown by molecular beam epitaxy, of the spin-ladder compound [CaCu2O3]4, using the field effect in a gated structure. At high hole-doping levels, superconductivity is induced in the nominally insulating ladder material without the use of high-pressure or chemical substitution. The observation of superconductivity is in agreement with the theoretical prediction that holes doped into spin ladders could pair and possibly superconduct.