Effect of Strain and Surface Proximity on the Acceptor Grouping in ZnO

According to the present knowledge, the level of zinc oxide conductivity is determined by donor and acceptor complexes involving native defects and hydrogen. In turn, recently published low-temperature cathodoluminescence images and scanning photoelectron microscopy results on ZnO and ZnO/N films indicate grouping of acceptor and donor complexes in different crystallites, but the origin of this phenomenon remains unclear. The density functional theory calculations on undoped ZnO presented here show that strain and surface proximity noticeably influence the formation energy of acceptor complexes, and therefore, these complexes can be more easily formed in crystallites providing appropriate strain. This effect may be responsible for the clustering of acceptor centers only in certain crystallites or near the surface. Low-temperature photoluminescence spectra confirm the strong dependence of acceptor luminescence on the structure of the ZnO film.

Atomic Layer Deposition of HfO2 Films Using TDMAH and Water or Ammonia Water

Atomic layer deposition of HfO₂ from TDMAH and water or ammonia water at different temperatures below 400 °C is studied. Growth per cycle (GPC) has been recorded in the range of 1.2-1.6 Å. At low temperatures (≤100 °C), the films grew faster and are structurally more disordered, amorphous and/or polycrystalline with crystal sizes up to 29 nm, compared to the films grown at higher temperatures. At high temperatures of 240 °C, the films are better crystallized with crystal sizes of 38-40 nm but grew slower. GPC, dielectric constant, and crystalline structure are improved by depositing at temperatures above 300 °C. The dielectric constant value and the roughness of the films have been determined for monoclinic HfO₂, a mixture of orthorhombic and monoclinic, as well as for amorphous HfO₂. Moreover, the present study shows that the increase in the dielectric constant of the films can be achieved by using ammonia water as an oxygen precursor in the ALD growth. The detailed investigations of the relationship between HfO₂ properties and growth parameters presented here have not been reported so far, and the possibilities of fine-tuning and controlling the structure and performance of these layers are still being sought.

Enhanced Luminescence of Yb3+ Ions Implanted to ZnO through the Selection of Optimal Implantation and Annealing Conditions

Rare earth-doped zinc oxide (ZnO:RE) systems are attractive for future optoelectronic devices such as phosphors, displays, and LEDs with emission in the visible spectral range, working even in a radiation-intense environment. The technology of these systems is currently under development, opening up new fields of application due to the low-cost production. Ion implantation is a very promising technique to incorporate rare-earth dopants into ZnO. However, the ballistic nature of this process makes the use of annealing essential. The selection of implantation parameters, as well as post-implantation annealing, turns out to be non-trivial because they determine the luminous efficiency of the ZnO:RE system. This paper presents a comprehensive study of the optimal implantation and annealing conditions, ensuring the most efficient luminescence of RE³⁺ ions in the ZnO matrix. Deep and shallow implantations, implantations performed at high and room temperature with various fluencies, as well as a range of post-RT implantation annealing processes are tested: rapid thermal annealing (minute duration) under different temperatures, times, and atmospheres (O₂, N₂, and Ar), flash lamp annealing (millisecond duration) and pulse plasma annealing (microsecond duration). It is shown that the highest luminescence efficiency of RE³⁺ is obtained for the shallow implantation at RT with the optimal fluence of 1.0 × 10¹⁵ RE ions/cm² followed by a 10 min annealing in oxygen at 800 °C, and the light emission from such a ZnO:RE system is so bright that can be observed with the naked eye.

Structural Properties of Thin ZnO Films Deposited by ALD under O-Rich and Zn-Rich Growth Conditions and Their Relationship with Electrical Parameters

The structural, optical, and electrical properties of ZnO are intimately intertwined. In the present work, the structural and transport properties of 100 nm thick polycrystalline ZnO films obtained by atomic layer deposition (ALD) at a growth temperature (T_g) of 100–300 °C were investigated. The electrical properties of the films showed a dependence on the substrate (a-Al₂O₃ or Si (100)) and a high sensitivity to T_g, related to the deviation of the film stoichiometry as demonstrated by the RT-Hall effect. The average crystallite size increased from 20–30 nm for as grown samples to 80–100 nm after rapid thermal annealing, which affects carrier scattering. The ZnO layers deposited on silicon showed lower strain and dislocation density than on sapphire at the same T_g. The calculated half crystallite size (D/2) was higher than the Debye length (L_D) for all as grown and annealed ZnO films, except for annealed ZnO/Si films grown within the ALD window (100–200 °C), indicating different homogeneity of charge carrier distribution for annealed ZnO/Si and ZnO/a-Al₂O₃ layers. For as grown films the hydrogen impurity concentration detected via secondary ion mass spectrometry (SIMS) was 10²¹ cm⁻³ and was decreased by two orders of magnitude after annealing, accompanied by a decrease in Urbach energy in the ZnO/a-Al₂O₃ layers.

Hole and electron trapping in HfO2/Al2O3 nanolaminated stacks for emerging non-volatile flash memories

HfO₂/Al₂O₃ nanolaminated stacks prepared by atomic layer deposition have been investigated in terms of their charge storage characteristics for possible application in charge trapping memories. It is shown that the memory window, electron and hole trapping and leakage currents depend strongly on Al₂O₃ thickness and post-deposition oxygen annealing. Depending on the Al₂O₃ thickness, post-deposition annealing in O₂ creates different electrically active defects (oxide charge and traps) in the stacks. O₂ annealing increases electron trapping, thus giving rise to a larger memory window and enhanced charge storage characteristics, i.e. 65% of charge is retained after ten years and the memory window decreases by 6% after 2.5 × 10⁴ program/erase cycles.

Abundant Acceptor Emission from Nitrogen-Doped ZnO Films Prepared by Atomic Layer Deposition under Oxygen-Rich Conditions

Nitrogen-doped and undoped ZnO films were grown by thermal atomic layer deposition (ALD) under oxygen-rich conditions. Low-temperature photoluminescence spectra reveal a dominant donor-related emission at 3.36 eV and characteristic acceptor-related emissions at 3.302 and 3.318 eV. Annealing at 800 °C in oxygen atmosphere leads to conversion of conductivity from n- to p-type, which is reflected in photoluminescence spectra. Annealing does not increase any acceptor-related emission in the undoped sample, while in the ZnO:N it leads to a considerable enhancement of the photoluminescence at 3.302 eV. The high resolution cathodoluminescence cross-section images show different spatial distribution of the donor-related and the acceptor-related emissions, which complementarily contribute to the overall luminescence of the annealed ZnO:N material. Similar area of both emissions indicates that the acceptor luminescence comes neither from the grain boundaries nor from stacking faults. Moreover, in ZnO:N the acceptor-emission regions are located along the columns of growth, which shows a perspective to achieve a ZnO:N material with homogeneous acceptor conductivity at least at the micrometer scale.

ZnTe-ZnO core-shell radial heterostructures grown by the combination of molecular beam epitaxy and atomic layer deposition

ZnTe-ZnO core-shell radial heterostructures were grown using a new method of combining molecular beam epitaxy (MBE) and atomic layer deposition (ALD). Zinc telluride nanowires (core) were grown on a GaAs substrate using gold catalyzed vapor-liquid-solid mechanism. An atomic layer deposition technique using diethyl zinc and deionized water as precursors was applied for zinc oxide shell formation. The core-shell ZnTe-ZnO heterostructures thus obtained were characterized by scanning electron microscopy, transmission electron microscopy, x-ray diffraction and photoluminescence measurements.

Direct observation of itinerant magnetism in the 5f-electron system UTe

Our electron photoemission experiments demonstrate that the magnetization of the ferromagnetic state of UTe is proportional to the binding energy of the hybridized band centered around 50 meV below EF. This proportionality is direct evidence that the ferromagnetism of UTe is itinerant; i.e., the 5f electrons are not fully localized close to the atomic core. This mechanism of itinerant ferromagnetism differs from the traditional picture for 5f-electron magnetism in an essential and a novel way. We propose a simple model for the observed proportionality between the temperature dependence of the magnetization and the binding energy of the hybridized band near EF. This model allows us to estimate the effective magnetic interaction and to identify signatures of itinerant ferromagnetism in other materials.

Photoemission and the electronic structure of PuCoGa5

The electronic structure of the first Pu-based superconductor PuCoGa5 is explored using photoelectron spectroscopy and a novel theoretical scheme. Exceptional agreement between calculation and experiment defines a path forward for understanding the electronic structure aspects of Pu-based materials. The photoemission results show two separate regions of 5f electron spectral intensity, one at the Fermi energy and another centered 1.2 eV below the Fermi level. The results for PuCoGa5 clearly indicate 5f electron behavior on the threshold between localized and itinerant. Comparisons to delta phase Pu metal show a broader framework for understanding the fundamental electronic properties of the Pu 5f levels in general within two configurations, one localized and one itinerant.