Benzohexacene guide in accurate determination of field effect carrier mobilities in long acenes

Oligoacenes are promising materials in the field of electronic devices since they exhibit high charge carrier mobility and more particularly as a semiconductor in thin film transistors. Herein, we investigate the field effect charge carrier mobility of benzohexacene, recently obtained by cheletropic decarbonylation at moderate temperature. Initially, high performance bottom contact organic thin-film transistors (OTFTs) were fabricated using tetracene to validate the fabrication process. For easier comparison, the geometries and channel sizes of the fabricated devices are the same for the two acenes. The charge transport in OTFTs being closely related to the organic thin film at the dielectric/organic semiconductor interface, the structural and morphological features of the thin films of both materials are therefore studied according to deposition conditions. Finally, by extracting relevant device parameters the benzohexacene based OTFT shows a four-probe contact-corrected hole mobility value of up to 0.2 cm² V⁻¹ s⁻¹.

Four-probes mobility vs. V_GS in the linear regime (V_DS = −10 V) for benzohexacene based transistor.

Integration of the Rhombohedral BiSb(0001) Topological Insulator on a Cubic GaAs(001) Substrate

Bismuth-antimony alloy (Bi_1 - xSb_x) is the first reported 3D topological insulator (TI). Among many TIs reported to date, it remains the most promising for spintronic applications thanks to its large conductivity, its colossal spin Hall angle, and the possibility to build low-current spin-orbit-torque magnetoresistive random access memories. Nevertheless, the 2D integration of TIs on industrial standards is lacking. In this work, we report the integration of high-quality rhombohedral BiSb(0001) topological insulators on a cubic GaAs(001) substrate. We demonstrate a clear epitaxial relationship at the interface, a fully relaxed TI layer, and the growth of a rhombohedral matrix on top of the cubic substrate. The antimony composition of the Bi_1 - xSb_x layer is perfectly controlled and covers almost the whole TI window. For optimized growth conditions, the sample generates a semiconductor band structure at room temperature in the bulk and exhibits metallic surface states at 77 K.

Photo-chemical study and optical properties of microtips self- written on vertical laser diodes using NIR photo-polymerization

Near infra-red (NIR) self-guided photo-polymerization is investigated in the context of micro-optics photo-fabrication on VCSELs (Vertical-Cavity Surface Emitting Lasers). We present the optimized process we have developed to allow for a collective fabrication on III-V devices wafers under real-time optical monitoring. The influence of photo-chemical parameters on final micro-elements dimensions is studied for two types of single mode 760 nm VCSELs. The difference of the resulting tip shape between the two lasers is due to the strong differences of their emissions, as they are nicely reproduced by the computed near-field profiles. The tip shapes are also compared to those produced by the light emitted by an optical fiber and differences with VCSEL tips are discussed. Also the VCSEL characteristics with fabricated tips are discussed and found in good agreement with optical modeling.

High angular tolerance and reflectivity with narrow bandwidth cavity-resonator-integrated guided-mode resonance filter

Guided mode resonance filters (GMRFs) are a promising new generation of reflective narrow band filters, that combine structural simplicity with high efficiency. However their intrinsic poor angular tolerance and huge area limit their use in real life applications. Cavity-resonator-integrated guided-mode resonance filters (CRIGFs) are a new class of reflective narrow band filters. They offer in theory narrow-band high-reflectivity with a much smaller footprint than GMRF. Here we demonstrate that for tightly focused incident beams adapted to the CRIGF size, we can obtain simultaneously high spectral selecitivity, high reflectivity, high angular acceptance with large alignment tolerances. We demonstrate experimentally reflectivity above 74%, angular acceptance greater than ±4.2° for a narrow-band (1.4 nm wide at 847 nm) CRIGF.

Measurement and modeling of 2D hexagonal resonant-grating filter performance

We report the measurement of a polarization-independent guided-mode resonant filter with a Q factor of approximately 2200 functioning near normal incidence in the near infrared (850 nm). Besides this remarkable performance, we provide a detailed optical and structural characterization of the component, which points out the origins of the limitation of the experimental performance. We conclude that the defaults in question can be corrected by improving the lithography process, and we are confident that even greater performance will be obtained in future realizations.

Fabrication and characterization of microlens arrays using a cantilever-based spotter

We present a quantitative study on the fabrication of microlenses using a low-cost polymer dispending technique. Our method is based on the use of a silicon micro-cantilever robotized spotter system. We first give a detailed description of the technique. In a second part, the fabricated microlenses are fully characterized by means of SEM (Scanning Electron Microscope), AFM (Atomic Force Microscopy) non contact optical profilometry and Mach-Zehnder interferometry. Diameters in the range [25-130mum] are obtained with an average surface roughness of 2.02nm. Curvature radii, focal lengths as well as aberrations are also measured for the first time: the fabricated microlenses present focal lengths in the range [55-181mum] and exhibit high optical quality only limited by diffraction behaviour with RMS aberration lower than lambda/14.