Ultraviolet Photodetectors Based on AlxGa1-xN Schottky Barriers

Schottky barrier photovoltaic detectors based on Si-doped AlxGa1-xN (0 ≤ × ≤ 0.22) have been fabricated and characterized. Samples were grown on basal plane sapphire by LP-MOVPE. Schottky contacts were made with Au. Responsivities are independent of the diode size and of the incident power in the range measured (10mW/m2 to 2KW/m2). The spectral response shows an abrupt cutoff that shifts linearly to higher energy with increasing Al content. A visible rejection of 3 to 4 orders of magnitude is observed in AlxGa1-xN Schottky photodiodes. Device time response is RC-limited, and a minimum decay time as short as 15ns have been estimated in unbiased Al0.22Ga0.28N diodes. This time response can be further reduced by reverse biasing.

The effect of the ferroelectric domain walls in the scanning near field optical microscopy response of periodically poled Ba(2)NaNb(5)O(15) and LiNbO(3) crystals

A study of Ba(2)NaNb(5)O(15) and LiNbO(3) crystals with periodic ferroelectric domain structures using the scanning near field optical microscopy technique is reported. Optical contrast is observed in the regions of ferroelectric domain boundaries and it is analysed using beam propagation method modelling. This reveals that the optical contrast, a consequence of changes in the refractive index, is not due to variation of the waveguide-coupling efficiency, and supports the hypothesis that it is associated with the domain array, which is related to the size of the domain.