The effect of stoichiometry on the structural, thermal and electronic properties of thermally decomposed nickel oxide

A thermal decomposition route with different sintering temperatures was employed to prepare non-stoichiometric nickel oxide (Ni_1−δO) from Ni(NO₃)₂·6H₂O as a precursor. The non-stoichiometry of samples was then studied chemically by iodometric titration, wherein the concentration of Ni³⁺ determined by chemical analysis, which is increasing with increasing excess of oxygen or reducing the sintering temperature from the stoichiometric NiO; it decreases as sintering temperature increases. These results were corroborated by the excess oxygen obtained from the thermo-gravimetric analysis (TGA). X-ray diffraction (XRD) and Fourier transformed infrared (FTIR) techniques indicate the crystalline nature, Ni–O bond vibrations and cubic structural phase of Ni_1−δO. The change in oxidation state of nickel from Ni³⁺ to Ni²⁺ were seen in the X-ray photoelectron spectroscopy (XPS) analysis and found to be completely saturated in Ni²⁺ as the sintering temperature reaches 700 °C. This analysis accounts for the implication of non-stoichiometric on the magnetization data, which indicate a shift in antiferromagnetic ordering temperature (T_N) due to associated increased magnetic disorder. A sharp transition in the specific heat capacity at T_N and a shift towards lower temperature are also evidenced with respect to the non-stoichiometry of the system.

A thermal decomposition route with different sintering temperatures was employed to prepare non-stoichiometric nickel oxide (Ni_1−δO) from Ni(NO₃)₂·6H₂O as a precursor.

Thermoelectric properties of Ag-doped CuS nanocomposites synthesized by a facile polyol method

Single crystalline hexagonal nanodisks (NDs) of covellite CuS and temperature dependent thermoelectric figure of merit of Ag-doped CuS nanocomposites.

Large power factor and anomalous Hall effect and their correlation with observed linear magneto resistance in Co-doped Bi2Se3 3D topological insulator

Magnetoresistance (MR), thermo power, magnetization and Hall effect measurements have been performed on Co-doped Bi2Se3 topological insulators. The undoped sample shows that the maximum MR as a destructive interference due to a π-Berry phase leads to a decrease of MR. As the Co is doped, the linearity in MR is increased. The observed MR of Bi2Se3 can be explained with the classical model. The low temperature MR behavior of Co doped samples cannot be explained with the same model, but can be explained with the quantum linear MR model. Magnetization behavior indicates the establishment of ferromagnetic ordering with Co doping. Hall effect data also supports the establishment of ferromagnetic ordering in Co-doped Bi2Se3 samples by showing the anomalous Hall effect. Furthermore, when spectral weight suppression is insignificant, Bi2Se3 behaves as a dilute magnetic semiconductor. Moreover, the maximum power factor is observed when time reversal symmetry (TRS) is maintained. As the TRS is broken the power factor value is decreased, which indicates that with the rise of Dirac cone above the Fermi level the anomalous Hall effect and linearity in MR increase and the power factor decreases.

Enhanced thermoelectric properties of selenium-deficient layered TiSe(2-x): a charge-density-wave material

In the present work, we report on the investigation of low-temperature (300-5 K) thermoelectric properties of hot-pressed TiSe2, a charge-density-wave (CDW) material. We demonstrate that, with increasing hot-pressing temperature, the density of TiSe2 increases and becomes nonstoichiometric owing to the loss of selenium. X-ray diffraction, scanning electron microscopy, and transimission electron microscopy results show that the material consists of a layered microstructure with several defects. Increasing the hot-press temperature in nonstoichiometric TiSe2 leads to a reduction of the resistivity and enhancement of the Seebeck coefficient in concomitent with suppression of CDW. Samples hot-pressed at 850 °C exhibited a minimum thermal conductivity (κ) of 1.5 W/m·K at 300 K that, in turn, resulted in a figure-of-merit (ZT) value of 0.14. This value is higher by 6 orders of magnitude compared to 1.49 × 10(-7) obtained for cold-pressed samples annealed at 850 °C. The enhancement of ZT in hot-pressed samples is attributed to (i) a reduced thermal conductivity owing to enhanced phonon scattering and (ii) improved power factor (α(2)σ).

Resistivity and thermopower measurement setups in the temperature range of 5-325 K

Automated precision measurement setups for electrical resistivity of eight metallic samples simultaneously and thermoelectric power of different types of samples in the temperature range of 5-325 K have been developed. The details of the setups and their capabilities have been described. Usually each run takes nearly 5 h and typical error is within 3% and 4%, respectively. The results of high purity Nb and Pt samples are used as examples to demonstrate this.

Grain size effect on lattice of ni nanocrystals prepared through polyol method

Nanocrystalline nickel powders were prepared with grain size 'd' in the range 40-100 nm diameters through polyol method. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) were used for characterization. XRD of the prepared samples consistently matched with standard fcc structure of nickel without any impurity peak. Detailed analysis and calculations using Scherrer equation for (111) peak revealed systematic increase in line width and peak shifting towards lower diffraction 2theta angles with decrease in nickel to ethylene glycol mole ratio. Different values of d estimated from various peaks of each sample suggested associated microstrains in the nanograins. Values of d estimated from X-ray diffraction patterns were compared with those obtained from atomic force microscopy and scanning electron microscopy results, and discussed. Observed lattice expansion is explained, on the basis of a theoretical model of linear elasticity.

Thickness dependent structural, electronic, and optical properties of Ge nanostructures

In the present paper, we have investigated structural, optical as well as electronic properties of electron beam evaporated Ge thin films having layer thicknesses ranging from ultra-thin (5 nm) to thick (200 nm). The Raman spectra show that all peaks are shifted towards lower wave number as compared to their bulk counterparts and are considered as a signature of nanostructure formation and quantum confinement effect. The Raman line exhibits transformation from nanocrystalline to microcrystalline phase with a reduction in blue shift of peak position with increase in Ge film thickness (>5 nm). Similarly, the optical absorption spectra corresponding to these films also show reduction in blue shift effect, although Ge 5 nm film shows the absorption behaviour quite different from higher thickness films. The corresponding band gap values obtained from absorption measurements are much larger than bulk Ge and are mainly attributed to the effect of quantum confinement as expected for small size particles calculated from GIXRD patterns. AFM data in each case are correlated and discussed with structural as well as optical results to support the effect of growth morphology on the above-mentioned observations. The results are further supported by photoelectron spectroscopy (PES), photoluminescence (PL) and resistivity measurements and are interpreted in terms of crystallinity and quantum confinement effect.

Anomalous electrical transport behavior in nanocrystalline nickel

We have prepared nanocrystalline Ni (n-Ni) samples of grain sizes 40-100 nm using a polyol method and investigated the electrical transport on their compacted pellets in the temperature range 3-300 K. The resistivity, ρ, decreases nearly linearly with increase in compaction pressure but without a change in its slope, dρ/dT. ρ is anomalously large, and is strongly temperature and grain-size dependent. The resistivity at room temperature, ρ(300 K), is in the range ∼40-759 µΩ cm but with a positive coefficient of resistivity α (metallic). This is associated with the significantly enhanced dρ/dT with increase in residual resistivity ρ(0). These characteristics are attributed to the disorder in the grain boundaries that represents effectively a series resistor network.