Retinal phototoxicity and the evaluation of the blue light hazard of a new solid-state lighting technology

Exposure Limit Values (ELV) for artificial lighting were defined in order to prevent light-induced damage to the retina. The evaluation of the lighting devices include the correction of their spectra by the B(λ) function or blue light hazard function, representing the relative spectral sensitivity of the human eye to the blue light. This weighting function peaks between 435 and 440 nm. In this study we evaluate a new generation of light emitting diode (LED), the GaN-on-GaN (gallium nitride on gallium nitride) LED, that present an emission peak in the purple part of the spectrum. Wistar rats were exposed to GaN-on-GaN and conventional diodes at different retinal doses (from 2.2 to 0.5 J/cm2). We show that GaN-on-GaN diodes are more toxic than conventional LED for the rat neural retina and the rat retinal pigment epithelium, indicating that the BLH (blue light hazard) weighting is not adapted to this type of diodes. One of the reasons of this increased toxicity is the effects of shorter wavelengths on mitochondria polarization. We also show that the threshold of phototoxic retinal dose in the rat (fixed at 11 J/cm2, BLH weighted) is overestimated, suggesting that the values used for regulations, calculated in primates using the same methods than in rats, should be revised.

On the use of an appropriate TdT-mediated dUTP-biotin nick end labeling assay to identify apoptotic cells

Apoptosis is an essential cellular mechanism involved in many processes such as embryogenesis, metamorphosis, and tissue homeostasis. DNA fragmentation is one of the key markers of this form of cell death. DNA fragmentation is executed by endogenous endonucleases such as caspase-activated DNase (CAD) in caspase-dependent apoptosis. The TUNEL (TdT-mediated dUTP-biotin nick end labeling) technique is the most widely used method to identify apoptotic cells in a tissue or culture and to assess drug toxicity. It is based on the detection of 3'-OH termini that are labeled with dUTP by the terminal deoxynucleotidyl transferase. Although the test is very reliable and sensitive in caspase-dependent apoptosis, it is completely useless when cell death is mediated by pathways involving DNA degradation that generates 3'-P ends as in the LEI/L-DNase II pathway. Here, we propose a modification in the TUNEL protocol consisting of a dephosphorylation step prior to the TUNEL labeling. This allows the detection of both types of DNA breaks induced during apoptosis caspase-dependent and independent pathways, avoiding underestimating the cell death induced by the treatment of interest.

Lateral patterning of multilayer InAs/GaAs(001) quantum dot structures by in vacuo focused ion beam

We report on the effects of patterning and layering on multilayer InAs/GaAs(001) quantum dot structures laterally ordered using an in vacuo focused ion beam. The patterned hole size and lateral pattern spacing affected the quantum dot size and the fidelity of the quantum dots with respect to the lateral patterns. 100% pattern fidelity was retained after six layers of dots for a 9.0 ms focused ion beam dwell time and 2.0 µm lateral pattern spacing. Analysis of the change in quantum dot size as a function of pattern spacing provided a means of estimating the maximum average adatom surface diffusion length to be approximately 500 nm, and demonstrated the ability to alter the wetting layer thickness via pattern spacing. Increasing the number of layers from six to 26 resulted in mound formation, which destroyed the pattern fidelity at close pattern spacings and led to a bimodal quantum dot size distribution as measured by atomic force microscopy. The bimodal size distribution also affected the optical properties of the dots, causing a split quantum dot photoluminescence peak where the separation between the split peaks increased with increasing pattern spacing.