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Gumprich A, Liedtke J, Beck S, Chirca I, Potočnik T, Alexander-Webber JA, Hofmann S, Tappertzhofen S. Buried graphene heterostructures for electrostatic doping of low-dimensional materials. Nanotechnology 2023; 34:265203. [PMID: 36758234 DOI: 10.1088/1361-6528/acbaa2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2022] [Accepted: 02/08/2023] [Indexed: 06/18/2023]
Abstract
The fabrication and characterization of steep slope transistor devices based on low-dimensional materials requires precise electrostatic doping profiles with steep spatial gradients in order to maintain maximum control over the channel. In this proof-of-concept study we present a versatile graphene heterostructure platform with three buried individually addressable gate electrodes. The platform is based on a vertical stack of embedded titanium and graphene separated by an intermediate oxide to provide an almost planar surface. We demonstrate the functionality and advantages of the platform by exploring transfer and output characteristics at different temperatures of carbon nanotube field-effect transistors with different electrostatic doping configurations. Furthermore, we back up the concept with finite element simulations to investigate the surface potential. The presented heterostructure is an ideal platform for analysis of electrostatic doping of low-dimensional materials for novel low-power transistor devices.
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Affiliation(s)
- A Gumprich
- Chair for Micro- and Nanoelectronics, Department of Electrical Engineering and Information Technology, TU Dortmund University, Martin-Schmeisser-Weg 4-6, D-44227, Dortmund, Germany
| | - J Liedtke
- Chair for Micro- and Nanoelectronics, Department of Electrical Engineering and Information Technology, TU Dortmund University, Martin-Schmeisser-Weg 4-6, D-44227, Dortmund, Germany
| | - S Beck
- Chair for Micro- and Nanoelectronics, Department of Electrical Engineering and Information Technology, TU Dortmund University, Martin-Schmeisser-Weg 4-6, D-44227, Dortmund, Germany
| | - I Chirca
- Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom
| | - T Potočnik
- Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom
| | - J A Alexander-Webber
- Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom
| | - S Hofmann
- Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom
| | - S Tappertzhofen
- Chair for Micro- and Nanoelectronics, Department of Electrical Engineering and Information Technology, TU Dortmund University, Martin-Schmeisser-Weg 4-6, D-44227, Dortmund, Germany
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Tappertzhofen S, Braeuninger-Weimer P, Gumprich A, Chirca I, Potočnik T, Alexander-Webber JA, Hofmann S. Transfer-free graphene passivation of sub 100 nm thin Pt and Pt–Cu electrodes for memristive devices. SN Appl Sci 2023. [DOI: 10.1007/s42452-023-05314-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/25/2023] Open
Abstract
AbstractMemristive switches are among the most promising building blocks for future neuromorphic computing. These devices are based on a complex interplay of redox reactions on the nanoscale. Nanoionic phenomena enable non-linear and low-power resistance transition in ultra-short programming times. However, when not controlled, the same electrochemical reactions can result in device degradation and instability over time. Two-dimensional barriers have been suggested to precisely manipulate the nanoionic processes. But fabrication-friendly integration of these materials in memristive devices is challenging.Here we report on a novel process for graphene passivation of thin platinum and platinum/copper electrodes. We also studied the level of defects of graphene after deposition of selected oxides that are relevant for memristive switching.
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