Peitz I, Fromherza P. Electrical interfacing of neurotransmitter receptor and field effect transistor.
THE EUROPEAN PHYSICAL JOURNAL. E, SOFT MATTER 2009;
30:223-231. [PMID:
19513770 DOI:
10.1140/epje/i2009-10461-3]
[Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/05/2008] [Accepted: 04/07/2009] [Indexed: 05/27/2023]
Abstract
The interfacing of a ligand-gated ion channel to a transistor is studied. It relies on the transduction of ion current to a voltage in a cell-transistor junction. For the first time, a genetically modified cell is used without external driving voltage as applied by a patch-pipette. Using a core-coat conductor model, we show that an autonomous dynamics gives rise to a signal if a driving voltage is provided by potassium channels, and if current compensation is avoided by an inhomogeneous activation of channels. In a proof-of-principle experiment, we transfect HEK293 cells with the serotonin receptor 5-HT3A and the potassium channel Kv1.3. The interfacing is characterized under voltage-clamp with a negative transistor signal for activated 5-HT3A and a positive signal for activated Kv1.3. Without patch-pipette, a biphasic transient is induced by serotonin. The positive wave is assigned to 5-HT3A receptors in the free membrane that drive a potassium outward current through the adherent membrane. The negative wave is attributed to 5-HT3A receptors in the adherent membrane that are activated with a delay due to serotonin diffusion. The implementation of a receptor-cell-transistor device is a fundamental step in the development of biosensors that combine high specificity and universal microelectronic readout.
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