The distribution of MNS hybrid glycophorins with Mur antigen expression in Chinese donors including identification of a novel GYP.Bun allele

BACKGROUND AND OBJECTIVES

MNS hybrid glycophorins are identified by characteristic antigen profiles. One of these is the Mur antigen, which is expressed on red cell hybrid glycophorins of several phenotypes of the 'Miltenberger' series found predominantly in East Asian population. The aim of this study was to investigate the distribution of Mur-positive hybrid glycophorins and clarify the genetic basis in the donors from southern China.

MATERIALS AND METHODS

Blood samples from 528 donors were collected for Mur antigen serological typing. Sequencing of GYPB pseudoexon 3 and MNS phenotyping were conducted in Mur-positive samples. The multiplex ligation-dependent probe amplification (MLPA) was used to confirm the zygosity of the GYP.Mur allele and determine the MNSs genotype. The expression of Mur antigen was evaluated by flow cytometry.

RESULTS

Fifty-one Mur-positive samples were identified by serological testing. Sequencing analysis showed 50 donors (50/528, 9.5%) with the GYP.Mur allele (48 heterozygotes and two homozygotes), which were confirmed by the MLPA genotyping analysis, and one donor (1/528, 0.19%) with a novel GYP.Bun allele. Flow cytometry analysis revealed higher Mur antigen expression on GP.Mur (Mi.III) homozygotes than heterozygotes. For the GYP.Mur homozygotes, an incorrect 'N' positive typing with anti-N lectin was obtained.

CONCLUSION

GP.Mur (Mi.III) is the main Mur-positive hybrid glycophorin in Guangzhou donors. The dosage effect of Mur antigen observed provides a basis for selecting the homozygous GP.Mur RBCs as the reagent cells to avoid neglecting weak antibodies. A separate GYP.Bun lineage found in the southern China provides evidence for further complexity in the MNS system.

Numerical analysis of deep sub-wavelength integrated plasmonic devices based on Semiconductor-Insulator-Metal strip waveguides

We report the first study of nanoscale integrated photonic devices constructed with semiconductor-insulator-metal strip (SIMS) waveguides for use at telecom wavelengths. These waveguides support hybrid plasmonic modes transmitting through a 5-nm thick insulating region with a normalized intensity of 200-300 μm(-2). Their fundamental mode, unique transmission and dispersion properties are consistent with photonic devices for guiding and routing of signals in communication applications. It has been demonstrated using Finite Element Methods (FEM) that the high performance SIMS waveguide can be used to fabricate deep sub-wavelength integrated plasmonic devices such as directional couplers with the ultra short coupling lengths, sharply bent waveguides, and ring resonators having a functional size of ≈1 µm and with low insertion losses and nearly zero radiation losses.

Detailed modeling of the epitaxial growth of GaAs nanowires

A detailed continuum model is presented for predicting the growth characteristics of GaAs nanowires during chemical beam epitaxy. The model describes the transport processes of Ga and As adatoms on the substrate and nanowire sidewalls, and through the nanoparticle and the nanowire-catalyst interface (NCI). The growth mechanisms of nanowires within the NCI are described using an extended step-flow kinetic model. The vapor-liquid-solid and vapor-solid-solid growth mechanisms are both described in the kinetic model. The growth rate of the nanowires, the surface and bulk concentrations of adatoms, and the role of transport processes of Ga and As adatoms during chemical beam epitaxy were investigated. The growth mechanisms of the nanowires were found to vary with increasing length of the nanowire.